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1.
A Nd-doped HfO2-Y2O3 ceramic having excellent transmittance was synthesized by HIPing, using high-purity powders (>99.99 wt%) of Y2O3, Nd2O3, and HfO2. The mixed powder compacts of these powders were sintered at 1650°C for 1 h under vacuum and HIPed at 1700°C for 3 h under 196 MPa of Ar. The specimen after HIPing consisted of uniform grains measuring about 30 μm and having pore-free structure. The optical transmittance of 1 at.% Nd-doped 2.6 mol% HfO2-Y2O3 ceramics ranging between visible and infrared wavelength was almost equivalent or superior to that of a Nd:Y2O3 single crystal grown by the Verneuil method.  相似文献   

2.
Compacts of TiB2 with densities approaching 100% are difficult to obtain using pressureless sintering. The addition of SiC was very effective in improving the sinterability of TiB2. The oxygen content of the raw TiB2 powder used in this research was 1.5 wt%. X-ray photoelectron spectroscopy showed that the powder surface consisted mainly of TiO2 and B2O3. Using vacuum sintering at 1700°C under 13–0.013 Pa, TiB2 samples containing 2.5 wt% SiC achieved 96% of their theoretical density, and a density of 99% was achieved by HIPing. TEM observations revealed that SiC reacts to form an amorphous phase. TEM-EELS analysis indicated that the amorphous phase includes Si, O, and Ti, and X-ray diffraction showed the reaction to be TiO2+ SiC → SiO2+ TiC. Therefore, the improved sinterability of TiB2 resulted from the SiO2 liquid phase that was formed during sintering when the raw TiB2 powder had 1.5 wt% oxygen.  相似文献   

3.
Superconducting properties of YBa2Cu3O7–r ceramics have been investigated with the aim of avoiding the weak links that are the principal reasons for low critical current densities in this compound. An efficient grain growth process should be useful in this respect. Superconducting ceramics were prepared from a commercial precursor powder (Hoechst) with or without addition of Y2BaCuO5 and from a gel precursor powder. Grain growth kinetics and densification are first derived under such conditions that control the liquid-phase contribution. Grain growth in the solid-state regime is anisotropic, possibly due to anisotropic grain boundary energies. Grains in the fine powder (gel precursor) grow 10 times faster than in the commercial reference but grain size saturates because of steric hindrance. Addition of Y2BaCuO5 particles inhibits grain growth in the solid-state regime. 211 particles are incorporated into grains when a transient liquid phase is present. Superconducting properties were characterized by 50-Hz magnetization hysteresis cycles at 77 K under H = 0.2 to 12 mT to probe weak-link behavior. Additional studies were performed at 5 K using higher fields. Weak-link contribution is decreased when samples from the gel route are processed in the solid-state regime (below the peritectic temperature). This may be attributed to the propensity of gel powder to develop, naturally, preferential grain boundaries due to its intrinsic structural anisotropy.  相似文献   

4.
β-sialon and Nd2O3-doped α-sialon materials of varying composition were prepared by sintering at 1775° and 1825°C and by glass-encapsulated hot isostatic pressing at 1700°C. Composites were also prepared by adding 2–20 wt% ZrO2 (3 mol% Nd2O3) or 2–20 wt% ZrN to the β-sialon and α-sialon matrix, respectively. Neodymium was found to be a fairly poor α-sialon stabilizer even within the α-phase solid solution area, and addition of ZrN further inhibited the formation of the α-sialon phase. A decrease in Vickers hardness and an increase in toughness with increasing content of ZrO2(Nd2O3) or ZrN were seen in both the HIPed β-sialon/ZrO2(Nd2O3) composites and the HIPed Nd2O3-stabiIized α-sialons with ZrN additions.  相似文献   

5.
Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti3SiC2 at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti3SiC2 samples with <5 wt% TiC could be rapidly synthesized from the M powders; however, the TiC content was always >18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti3SiC2 could be improved to >97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti3SiC2 also could be controlled using three types of powders, i.e., fine, coarse, or duplex-grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high-purity Ti3SiC2 could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique.  相似文献   

6.
The relationship between the preparation procedure and superconducting properties of La1Ba2Cu3Oy was studied. A series of samples was sintered in an N2-gas atmosphere for various lengths of time ranging from 1 to 40 h, followed by a fixed annealing procedure in O2. It was found that the shorter the sintering period, the higher was the oxygen content. The samples sintered for a period of less than 15 h contained excess oxygen compared with La1Ba2Cu3O7 and exhibited poor superconducting properties. The sample sintered for 40 h had an oxygen content y equal to 6.95, and had excellent superconducting properties. The mechanism for preparing high-quality La1Ba2Cu3Oy is discussed.  相似文献   

7.
High-sinterability MgAl2O4 powder has been produced from alkoxide precursors via a freeze-drying method. Clear alumina sol and magnesium methoxide were used as starting materials in the process. The spinel powders were characterized by various techniques, such as thermal analysis, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The tap density and sinterability of the spinel power are affected by the ball-milling techniques. Highly dense, transparent, polycrystalline MgAl2O4 has been obtained from these powders by sintering and hot isostatic pressing. Bimodal grain-size microstructure is observed in a HIPed sample.  相似文献   

8.
The phase diagram of the system BaO-Fe203 was determined by X-ray diffraction, melting-point measurement, and microscopic methods. Since the reduction of Fe3+ to Fe2+ was observed by chemical analysis in the samples heated at high temperature, especially in molten samples, the samples were heated at 1 atmosphere pressure of oxygen in the temperature region in which the liquid was in equilibrium; 1 atmosphere pressure of oxygen was su5cient to restrain the reduction of Fe3+. In the temperature region of solid-solid equilibrium, the dissociation was not observed even when the samples were heated in air. BaO - 6Fe2O3 formed a solid solution with BaO.Fe203. The BaO:Fe203 ratio of the solid solution was BaO.4.5Fe203 at 1350°C. and BaO. 5.0Fe20a at 800°C. The precipitation micro-structures of each primary solid solution were observed.  相似文献   

9.
The oxidation process of MoSi2 is very complex, and controversial results have been reported, especially for the early-stage oxidation before the formation of passive SiO2 film. Most oxidation studies have been carried out on bulk consolidated samples, and the early stage of oxidation has not been studied. In this investigation, very fine MoSi2 powder with an average particle size of 1.6 μm was used. Such a fine particle size makes it easier to study the early stages of oxidation since a significant portion of the powder is oxidized before the formation of passive SiO2 film. The oxidation kinetics of commercial MoSi2-SiC and MoSi2-Si3N4 powder mixtures were also studied for comparison. Weight changes were measured at discrete time intervals at 500° to 1100°C in 0.14 atm of oxygen. X-ray diffraction was used to identify the phases formed during oxidation. Our results show the formation of MoO3 phase and an associated weight gain at low temperatures (500° and 600°C). At temperatures higher than 900°C, Mo5Si3 phase formed first and was subsequently oxidized to solid SiO2 and volatile MoO3, resulting in an initial weight gain followed by subsequent weight loss. A model based on the assumption that oxidation kinetics of both MoSi2 and Mo5Si3 are proportional to their fractions in the system describes the experimental data well.  相似文献   

10.
Gd2O3-doped Bi2O3 polycrystalline ceramics containing between 2 and 7 mol% Gd2O3 were fabricated by pressureless sintering powder compacts. The as-sintered samples were tetragonal at room temperature. Hightemperature X-ray diffraction (XRD) traces showed that the samples were cubic at elevated temperatures and transformed into the tetragonal polymorph during cooling. On the basis of conductivity measurements as a function of temperature and differential scanning calorimetry (DSC), the cubic → tetragonal as well as tetragonal → cubic → teansition temperatures were determined as a function of Gd2O3 concentration. The cubic → tetragonal transformation appears to be a displacive transformation. It was observed that additions of ZrO2 as a dopant, which is known to suppress cation interdiffusion in rare-earth oxide–Bi2O3 systems, did not suppress the transition, consistent with it being a displacive transition. Annealing of samples at temperatures 660°C for several hundred hours led to decomposition into a mixture of monoclinic and rhombohedral phases. This shows that the tetragonal polymorph is a metastable phase.  相似文献   

11.
Hot isostatically pressed silicon nitride was produced by densifying Si3N4 powder compacts and reaction-bonded Si3N4 (RBSN) parts with yttria as a sintering additive. The microstructure was analyzed using scanning electron microscopy, X-ray diffraction, and density measurements. The influence of the microstructure on fracture strength, creep, and oxidation behavior was investigated. It is assumed that the higher amount of oxygen in the Si3N4 starting powder compared with the RBSN starting material leads to an increased amount of liquid phase during densification. This results in grain growth and in a larger amount of grain boundary phase in the hot isostatically pressed material. Compared with the hot isostatically pressed RBSN samples therefore, strength decreases whereas the creep rate and the weight gain during oxidation increase.  相似文献   

12.
Processing and Characterization of BaTi4O9   总被引:1,自引:0,他引:1  
BaTi4O9 powder prepared by calcining BaCO3 and TiO2 powders was sintered to over 97% of theoretical density. Less than 5% Ba2Ti9O20 occurred as a second phase in "pure" BaTi4O9, and Al2O3 impurities from processing formed isolated hollandite (∼BaAl2Ti6O16) grains, which were identified by fringes in bright-field TEM images. For pure BaTi4O9 at 1 MHz, a dielectric loss (tan δ) of 5 × 10−4 and dielectric constant of 39 were recorded. Hollandite impurities were found to increase tan δ by 2 orders of magnitude, whereas firing in oxygen decreased tan δ by an order of magnitude.  相似文献   

13.
A relaxor ferroelectric material, 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 (0.9PMN-0.1PT) with a pyrochlore-free phase, was prepared by using one-step calcination in the present study. The 0.9PMN-0.1PT powder with the pure perovskite phase was prepared successfully from a mixture of the PMN precursor and the crystalline PT by heating for 2 h at temperatures greaterthan equal to750°C. The PMN precursor was synthesized by adding an aqueous Mg(NO3)2 solution, rather than MgO, to the alcoholic slurry of PbO and Nb2O5. The 0.9PMN-0.1PT powder sintered to >96% relative density via heat treatment for 2 h at temperatures of 900°-1200°C. The highest room-temperature dielectric constant (epsilonrt) was 24700 at 1 kHz for the samples that were sintered at 1100°C; however, the samples that were sintered at 900°C still had epsilonrt values of 22600 at 1 kHz.  相似文献   

14.
Polycrystalline Si3N4 samples with different grain-size distributions and a nearly constant volume content of grain-boundary phase (6.3 vol%) were fabricated by hot-pressing at 1800°C and subsequent HIP sintering at 2400°C. The HIP treatment of hot-pressed Si3N4 resulted in the formation of a large amount of ß-Si3N4 grains ∼10 µm in diameter and ∼50 µm long, and the elimination of smaller matrix grains. The room-temperature thermal conductivities of the HIPed Si3N4 materials were 80 and 102 Wm−1K−1, respectively, in the directions parallel and perpendicular to the hot-pressing axis. These values are slightly higher than those obtained for hot-pressed samples (78 and 93 Wm−1K−1). The calculated phonon mean free path of sintered Si3N4 was ∼20 nm at room temperature, which is very small as compared to the grain size. Experimental observations and theoretical calculations showed that the thermal conductivity of Si3N4 at room temperature is independent of grain size, but is controlled by the internal defect structure of the grains such as point defects and dislocations.  相似文献   

15.
The rate of ZnA12O4 formation for binary powder mixtures of ZnO and α-Al2O3 (dense coarse particles and weak agglomerates of fine powder) fired in air or O2 atmospheres was measured and the microstructures of those systems were observed by scanning electron microscopy. With dispersed dense particles of α-Al2O3, the Al2O3 surfaces were covered with ZnO and the spinel grew into the particles maintaining essentially a constant reaction interface area. Calculations based on geometric measurements and use of Jander's equation gave a similar high activation energy, 354 kJ/mol, which corresponds to the activation energy of volume diffusion of Zn2+ in ZnAl2O4. An oxygen atmosphere had no effect. With a matrix of fine α-Al2O3 powder and dispersed granules of ZnO, a higher reaction rate occurred because of an increase in reaction interface area due to penetration of the powder compact matrix by ZnO vapor, which was enhanced by an O2 atmosphere. The reaction layer grew into the alumina matrix adjoining the ZnO granules with a parabolic rate law. Apparent activation energies below ∼200 kJ/mol were calculated.  相似文献   

16.
Si3N4/MoSi2 and Si3N4/WSi2 composites were prepared by reaction-bonding processes using as starting materials powder mixtures of Si-Mo and Si-W, respectively. A presintering step in an At-base atmosphere was used before nitriding for the formation of MoSi2 and WSi2; the nitridation in a N2-base atmosphere was followed after presintering with the total stepwise cycle of 1350°C × 20 h +1400°C × 20 h +1450°C × 2 h. The final phases obtained in the two different composites were Si3N4 and MoSi2 or WSi2; no free elemental Si and Mo or W were detected by X-ray diffraction.  相似文献   

17.
Single-phase, cubic solid solutions of baseline composition 25% Y2O3—75% Bi2O3 with and without aliovalent dopants were fabricated by pressureless sintering of powder compacts. CaO, SrO, ZrO2, or ThO2 was added as an aliovalent dopant. Sintered samples were annealed between 600° and 650°C for up to 4000 h. Samples doped with ZrO2 or ThO2 remained cubic, depending upon the dopant concentration, even after long-term annealing. By contrast, undoped, CaO-doped, and SrO-doped samples transformed to the low-temperature, rhombohedral phase within ∼ 200 h. Conductivity measurements showed no degradation of conductivity in samples that did not undergo the transformation. In samples that underwent the transformation, a substantial decrease in conductivity occurred. The enhanced stability of the ZrO2- and ThO2-doped samples is rationalized on the basis of suppressed interdiffusion on the cation sublattice.  相似文献   

18.
α-Al2O3 platelet powders were synthesized in molten Na2SO4 flux. The size of α-Al2O3 platelets was significantly reduced when partially decomposed rather than pure Al2(SO4)3 was used as the source of Al2O3; a further reduction in the platelet size was realized through additional seeding with nanosized α-Al2O3 seeds. The addition of microsized α-Al2O3 platelet seeds significantly influenced the platelet morphology of the final powder, as well. The platelet size of the final powder was in direct proportion to the size of the platelet seeds, and was in reverse proportion to the cube root of the platelet seed content.  相似文献   

19.
Nanocrystalline La0.9Sr0.1Al0.85Co0.05Mg0.1O3 oxide powder was synthesized by a citrate–nitrate auto-ignition process and characterized by thermal analysis, X-ray diffraction, and impedance spectroscopy measurements. Nanocrystalline (50–100 nm) powder with perovskite structure could be produced at 900°C by this process. The powder could be sintered to a density more than 96% of the theoretical density at 1550°C. Impedance measurements on the sintered samples unequivocally established the potential of this process in developing nanostructured lanthanum aluminate-based oxides. The sintered La0.9Sr0.1Al0.85Co0.05Mg0.1O3 sample exhibited a conductivity of 2.40 × 10−2 S/cm in air at 1000°C compared with 4.9 × 10−3 S/cm exhibited by La0.9Sr0.1Al0.85Mg0.15O3.  相似文献   

20.
This study shows that the amount ofAl2O3 needed to form high density Si3N4-15Y2-O3 samples can be reduced by using high surface area Si3N4 powder and high N2 overpressure (high sintering temperatures) during the sintering process. The reduction in AI2O3 content results in improved oxidation resistance of the sintered samples.  相似文献   

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