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1.
通过平面波法计算金刚石结构光子晶体的禁带特征,得出:当RA=0.16时,禁带宽度最大;当晶格常数a=8.5mm时,对应的最大禁带宽度为3.5GHz,对应的禁带范围为15.3~18.7GHz.利用CAD软件设计了在x,y,z三个方向上的周期数分别为2,4,6的金刚石结构的光子晶体模型,并采用立体印刷技术制备出了17.4mm×36.54mm× 54.32mm的三维微波金刚石光子晶体.最终通过HP网络测试仪对样品的禁带特征进行测试,结果表明;在晶体的<100》方向上存在频率为14.7~18.5GHz的光子禁带,这与理论值相一致.当电磁波频率为17GHz时,对应的衰减率为-30dB.  相似文献   

2.
Face-centred-cubic photonic crystals with overlapping stop bands are stacked in tandem to obtain an ultrawideband photonic crystal. This crystal has a stop band that extends from 16 to at least 25 GHz and has a minimum rejection of ~7 dB at normal incidence. Different stacking configurations have been studied, and cavity modes between nonadjacent crystals with overlapping stop bands have been observed  相似文献   

3.
基于开环双模谐振器设计了一种双频带通滤波器,由两个中心重合的正方形开口环谐振器组成。分析该谐振器的奇偶模谐振频率与传输零点,每个通带内有两个谐振模式。该滤波器中心频率分别为4.5 GHz和6.5 GHz,3 dB相对带宽FBW分别为11%、5%,两通带带内插入损耗分别小于0.6 dB、1.4 dB,带内回波损耗分别优于19.5 dB、16.5 dB,高频处阻带抑制达到50 dB,两通带之间隔离度达到53 dB,尺寸仅为6 mm×11 mm×1.09 mm。  相似文献   

4.
林海立  毛军发  张文梅 《电子学报》2005,33(8):1506-1508
本文应用传输线理论对PBG结构带通滤波器进行分析,并在此基础上仿真、设计一种新颖的K波段的双模带通滤波器.光子带隙结构具有独特的带阻特性,对高次模具有很好的抑制特性,能够提高微波电路系统的抗干扰能力.由于PBG的慢波特性,使得带通滤波器的结构尺寸大为减小,符合系统小型化的要求.在此基础上,就这种结构应用Ensemble软件进行优化仿真.最后制作出滤波器并进行了测试.仿真结果与实验结果吻合很好,插入损耗为-4.5dB,通带中心频率为25.2GHz,-3dB带宽为1.8GHz,相对带宽7%.  相似文献   

5.
提出了一种基于磁性光子晶体的高性能微波带通滤波器。仿真计算和实验测量结果表明,该滤波器矩形系数好,插入损耗小,带外抑制高且带内平坦。研制的中心频率为10.75 GHz的通带滤波器,带宽达1.3GHz,通带内插入损耗小于5dB,带外抑制50dB以上。改变磁性圆柱的半径或磁性光子晶体的晶格常数可设计出工作在不同频段,具有不同带宽的微波滤波器。  相似文献   

6.
This paper reports the design of a compact low pass filter (LPF) with wide stop band region using tri-section stepped impedance resonators in microstrip medium. Experimental results of a low pass filter designed at 1 GHz have been compared against the analytical and EM simulation results for the validation of the design. Results are satisfactorily matching each other. The maximum insertion of the measured filter is 0.2 dB and minimum return loss is 13.5 dB over the pass band. The stop band rejection is better than 20 dB from 1.5 GHz to 4.2 GHz and hence wide stop band performance is achieved. Overall size of the filter is 30 mm × 20 mm × 0.78 mm which is 0.1λ × 0.066λ × 0.0026λ at 1 GHz.  相似文献   

7.
应用LTCC多层耦合带状线谐振器和交叉耦合传输零点原理,在改进的三维梳状带通滤波器结构中引入交叉耦合,增强非相邻谐振级间的交叉耦合;在2、4谐振级间引入Z字形导体层,通过调节Z字形控制传输零点位置;同时适当调节加载电容大小,有效减小了滤波器体积,实现了高次谐波抑制、边带陡峭和通带内线性相位.采用低温共烧陶瓷(LTCC)技术设计制作了中心频率为3GHz,通带为200MHz的微型带通滤波器.实验和仿真结果表明,该滤波器的中心频率插入损耗小于2.6dB,阻带抑制高于40dB,边带陡峭,尺寸仅为4.8mm×4.2mm× 1.5mm.成品率高达85%.  相似文献   

8.
A new type of low-pass filter based on a coupled line and transmission line theory is proposed for suppressing harmonics and spurious frequency. The seventh-order coupled-line low-pass filter with strip line configuration was fabricated using a high-temperature superconducting (HTS) thin film on MgO(100) substrate. The seventh-order low-pass filter has five attenuation poles in the stop band. Its cutoff frequency is 1 GHz with a 0.01-dB ripple level. The fabricated filter exhibits a characteristic stop band in the range from 1 to 7 GHz. A measured insertion loss at the pass-band of the HTS low-pass filter is 0.2 dB at 77 K, while the maximum return loss is 17.1 dB. These results match well with those obtained by the EM simulation. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range, and low insertion loss  相似文献   

9.
An electromagnetic crystal (EMXT) with a bandgap around 35 GHz is used as the top and/or bottom walls of a rectangular waveguide. Because of its bandgap, such an EMXT waveguide is a very effective band-stop filter with the rejection band centered at 35 GHz. More than 70 dB of isolation for the rejection band and less than 2 dB of insertion loss for the pass band are measured. Finite element simulation of the EMXT band-stop filter agrees very well with measurements. Using tunable EMXT walls, a band-stop filter with adjustable center frequency and bandwidth can also be realized.  相似文献   

10.
Slot antennas on photonic band gap crystals   总被引:1,自引:0,他引:1  
The radiation patterns of a slot antenna placed on a photonic band gap crystal have been measured. We used a layer-by-layer photonic band gap crystal having a three-dimensional stop band between 12 and 15 GHz. The slot antenna radiation depends sensitively on the relative position and orientation of the slot in the surface unit cell of the photonic crystal. We have found configurations of the slot antenna with an increase of radiated power by 2-3 dB. The photonic band gap crystal can considerably improve the performance of a simple slot antenna  相似文献   

11.
A compact L-band high temperature superconducting (HTS) microstrip input duplexer for satellite communication application has been developed. The duplexer has two output channels with center frequencies at 1200 and 1250 MHz, respectively. It was fabricated on a single piece of 2-in double-sided YBCO thin film on $hbox{LaAlO}_{3}$ substrate with a dimension of 26 $times$ 42 mm. The duplexer consists of a T-junction and two bandpass filters, i.e., a ten-pole filter and an eight-pole filter for the two transmission channels, respectively. Both of the two HTS bandpass filters were specially designed to suppress the second-harmonic spurious passband. Moreover, an HTS bandstop filter is added to the duplexer to improve the out-of-band rejection at a special frequency band. As a result of the preceding special designs, in addition to a very low insertion loss (0.2 dB), considerably sharp band edge (21 dB/MHz), and good voltage standing wave ratio (better than 1.4:1), much deeper out-of-band rejection (more than 75 dB) can be realized in a much wider frequency range, i.e., up to 3 GHz, which is almost three times above the center frequency of the passbands. Although all the elements of the duplexer are integrated within a single-piece YBCO film and the layout is compact, excellent isolation (higher than 80 dB) between the two channels has still been achieved.   相似文献   

12.
导出了二维三角晶格光子晶体的填充系数与正多边形散射子外接圆半径的普适关系,并利用平面波展开法计算了Ge基二维三角晶格光子晶体的光子带隙.计算表明:Ge圆柱置于空气背景中时,可产生TM、TE带隙,TM带隙占优势;随着Ge填充系数的增大,光子带隙的宽度先增大后减小,其中心频率由高频向低频移动;TM模第一带隙宽度在半径为0.14a处达峰值.空气圆柱置于Ge背景中时,可产生TM、TE及完全带隙,TE带隙占优势;随着空气填充系数的增大,光子带隙的宽度先增大后减小,其中心频率由低频向高频移动;TE模第一带隙宽度和最大完全带隙宽度分别在半径为0.46a和0.49a处达峰值.  相似文献   

13.
黄小晖  吴国安 《半导体技术》2011,36(12):957-961
提出了一种阻带具有多个传输零点的带通滤波器设计方法,基于低温共烧陶瓷(LTCC)技术实现,可满足移动通信用滤波器小型化、高性能的要求。在电路设计中,通过改进滤波器谐振器结构,分别在阻带的低端近端、高端远端引入传输零点以提高带外抑制。借助三维仿真软件,进行指标、结构的仿真优化,设计并制作了一款尺寸为6 mm×3 mm×2 mm的LTCC滤波器,其中心频率f0=2.25 GHz,0.5 dB带宽不小于100 MHz,通带内损耗不大于1.8 dB,在1.33,1.78 GHz和二次谐波处均有传输零点。实测结果表明,该滤波器在阻带低端和二次谐波处有较好的抑制,因此其在移动通信系统中会有广泛应用。  相似文献   

14.
The lasing characteristics of a photonic crystal membrane heterostructure cavity that utilises a kagome type lattice is demonstrated. A heterostucture cavity is formed by interfacing two photonic crystals such that the dispersion maximum of the inner lattice falls within the photonic bandgap of the surrounding lattice. Feedback to slow Bloch modes allows for localisation of band edge modes and a reduction of in-plane losses. Singlemode lasing is observed in relatively large area lasers at 1550 nm.  相似文献   

15.
We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.  相似文献   

16.
为满足滤波器在双频带通信系统中发展的要求,提出了一种基于1/4模基片集成波导(QMSIW)加载互补开口谐振环(CSRR)的新型双通带滤波器。根据CSRR谐振器的传输特性,实现以其谐振频点为中心的第一个通带;设计QMSIW谐振腔的边长,实现以该腔体谐振频点为中心的第二通带;设计QMSIW腔体间的耦合方式,在两通带之间和高阻带处各引入一个传输零点,加强两通带隔离度和带外抑制。设计了一款两通带的中心频率分别为8.1 GHz和11.5 GHz,且有效尺寸仅为15 mm×8 mm,插入损耗低于0.4 dB,高阻带衰减达64 dB,两通带隔离度达46 dB。  相似文献   

17.
梁吴艳  陈德媛  谷云斌  夏雨  陈兵 《半导体光电》2019,40(2):176-180, 246
设计了一种基于光子晶体的结构紧凑、损耗低、频带宽的三端口三光路光环行器,该环行器由Y型光子晶体波导及配置在中心位置的磁光材料星形柱构成。通过对结构参数进行优化,该结构可以分别实现194~196GHz、198.2~199.4GHz和197~197.6GHz三个频段内稳定的顺时针单向环行传输,隔离度分别大于24、15.21和14.5dB,插入损耗分别小于0.18、0.11和0.38dB。该环行器结构简单,特别适用于结构复杂的光子集成系统,同时可提高光路的抗干扰性和稳定性等。  相似文献   

18.
An ultra-selective high-temperature superconducting bandpass filter was designed and fabricated to satisfy the demands of the third-generation wireless communications. This filter was designed to have 12-pole quasi-elliptic response with 4.68-MHz bandwidth in the third-generation communications band (a fractional bandwidth of 0.0023). Full-wave simulations were conducted by using Sonnet software. A novel, compact, and low radiation resonator with a high-quality (Q) factor value was developed to reduce the parasitical coupling. In order to satisfy the demand of high band-edge steepness, three pairs of transmission zeros at finite frequencies were introduced in the cascaded quadruplet coupling structure. The filter was fabricated on a 2-in-diameter 0.43-mm-thick sapphire wafer with double-sided YBCO films. The measurements showed that the passband center frequency (f0) of the filter is 2.038 GHz at 67 K with a midband insertion loss of 0.67 dB and the return loss better than 15 dB. The measured response of the filter also exhibited ultra-high band-edge steepness of 140-220 dB/MHz. Better than 60 dB of out-of-band rejections for frequencies very close to the band edge (|f-f0|>2.7 MHz), better than 90 dB at frequencies 7.5 MHz away from the center frequency and up to 100 dB of wideband rejections were achieved  相似文献   

19.
This paper presents the design and performance of 60-GHz-band coplanar monolithic microwave integrated circuit (MMIC) active filters. To compensate for the loss of the passive filter, a resonator composed of a quarter-wavelength line is terminated by a circuit with a constant negative resistance over a wide frequency band. Cross-coupling is introduced to make the attenuation poles on both sides of the passband. We develop two types of two-stage filter: one with medium bandwidth and the other with narrow bandwidth. The former shows an insertion loss of 3.0 dB with a 3-dB bandwidth of 2.6 GHz and a rejection of larger than 20 dB at a 3-GHz separation from a center frequency of 65.0 GHz. This filter also shows a noise figure of 10.5 dB. The latter filter shows an insertion loss of 2.8 dB with a 10-dB bandwidth of 2.1 GHz at a center frequency of 65.0 GHz. It also shows an output power of 5.0 dBm at a 1-dB compression point. The loss variation due to temperature variation is successfully compensated using a gate bias control circuit. The size of the MMIC filters is 2.5 mm/spl times/1.1 mm.  相似文献   

20.
In this paper, a compact lowpass filter (LPF) with ultra-wide rejection band has been presented. In fact, a novel meandered semi-hairpin resonator has been used and the stopband characteristics have been improved by using a combinatorial suppressing unit. The suppressing unit contains a combination between T-shaped and semi-circular patches, which are loaded symmetrically to the designed resonator. For the proposed LPF, the-3 dB cut-off frequency has been adjusted to 2.2 GHz. After simulations, the proposed LPF has been fabricated and tested. The experimental results validated that the rejection bandwidth is expanded from 2.471 GHz to 28.62 GHz with corresponding attenuation level of −20 dB. The transition band is only 0.271 GHz from 2.2 GHz to 2.471 GHz with corresponding attenuation levels of −3 dB to −20 dB, respectively. In addition, the measured maximum insertion loss and return loss in the passband, from DC to 2.04 GHz (93% of the passband region) are 0.2 dB and 17 dB, respectively.  相似文献   

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