磁控溅射法La0.5Ca0.5MnxTi1-xO3薄膜的制备与结构研究

利用射频磁控溅射法结合后期热处理，在Si（100）基板上以不同的工艺条件成功制备了La0.5Ca
0.5MnxTi1-xO3（LCMTO）复铁电性磁电子薄膜.通过X射线衍射（XRD）、原子力显微镜（AFM）、电子衍射
能谱（EDS）等手段对薄膜进行了相的形成、结构特性及薄膜组成等的测试.研究表明，薄膜在600℃以上
开始析晶，850℃以上结晶完成,形成正交晶系钙钛矿相.硅基板上的LCMTO薄膜在不同温度下析出晶相的晶
格常数不同，温度越高，晶相的晶格常数越大；薄膜厚度越大，晶格常数相对较小;在薄膜制备时提高氧
分压，形成氧空位浓度低的完整晶相， Si基板上LCMTO薄膜的晶格常数相对较小.     

Preparation of TiO_2 Thin Film and Its Antibacterial Activity

1　IntroductionInrecentyears ,theuseofinorganicantimicrobialagentshasattractedinterestforthecontrolofmicrobes[1-3 ] .Thekeyadvantagesofinorganicantimicro bialagentsareimprovedsafetyandstability ,ascomparedwithorganicantimicrobialagents .Atpresent,mostanti…     

Grain Size and Photocatalytic Activity of Nanometer TiO_2 Thin FilmsPrepared by the Sol-gel Method

Transparent anatase TiO2 nanometer thin films with photocatalytic activity were prepared via the sol-gel method on soda-lime glass. The thickness , crystalline phase, grain size, surface hydroxyl amount and so on were characterized by scanning electron microscopy (SEM) , X-ray diffraction (XRD), transmission electron microscopy ( TEM), X-ray photoelectron spectroscopy (XPS) and UV-visible spectrophotometer ( UV-VIS). The photocatalytic activity of TiO2 thin films was evaluated for the photocatalytic decolorization of aqueous methyl orange . The effects of film thickness on the crystalline phase, grain size, transmittance and photocatalytic activity of nanometer Ti02 thin films were discussed.     

Microstructure and Oxidation Resistance of V Thin Films Deposited by Magnetron Sputtering at Room Temperature

Vanadium films were deposited on Si(100) substrates at room temperature by direct current (DC) magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy (SEM) and atomic force microscope (AFM).The oxidation resistance of films in air was studied using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM).The results showed that the amorphous vanadium film with a flatter surface had higher oxidation resistance than the crystalline film when exposed to atmosphere.The rapid formation of the thin oxide layer of amorphous vanadium film could protect the film from sustained oxidation,and the relative reasons were discussed.     

Preparation of TiO2 Thin Film and Its Antibacterial Activity

TiO2 nanometer thin films with photocatalytic antibacterial activity were prepared by the sol-gel method on fused quartz and soda lime glass precoated with a SiO2 layer. The thin films were characterized by X-ray photoelectron spectroscopy ( XPS ), scanning electron microscopy (SEM), and X- ray diffraction ( XRD ). The results show that sodium and calcium diffusion into nascent TiO2 film is effectively retarded by the SiO2 layer precoated on the soda lime glass, The antibacterial activity of the films was determined. The crystalline of TiO2 nanometer thin film has important effects on the antibacterial activity of the film.     

XPS Studies of Magnetic Multilayers

NiOx/N81Fe19 and Co/AlOx/Co magnetic multilayers were fabricated by reactive RF/DC magnetron sputtering on clean glass substrates and oxidized Si (100) substrates, respectively. The exchange biasing field (Hex) between NiOx, and Ni81Fe19 as a function of NiOx, oxidation states was studied by X-ray photoelectron spectroscopy (XPS). The oxidation states and the oxide thickness of Al layers in magnetic multilayer films consisting of Co/AlOx/Co were also analyzed. It is found that the Hex of NiOx/Ni81Fe19 films only depends on Ni2+ but not on Ni3+ or Ni. The bottom Co can be completely covered by depositing an Al layer thicker than 2.0 nm. The oxide layer was Al2O3, and its thickness was 1.15 nm.     

氮化SiO_2超薄层的特性研究

在Si衬底表面,利用高温氧化获得了厚度小于0nm的SiO2超薄层,经过进一步的快速热氮化制备出氯化SiO2超薄层通过光电子能谱（XPS）和表面荷电能谱（SCS）的测试分析,研究了氮化SiO2超薄层中N的分布以及SiO2超薄层／Si界面态密度（Dit）的变化,结果表明：快速热氨化引入的大部分N积聚在SiO2／Si的界面附近,能够用一个双层氮化模型解释;快速热氨化使得Dit变小．同时,还发现较小的Dit对应较大的击穿场强．     

STUDY ON PHOTOCATALYTIC MECHANISM OF SOL-GEL-DERIVED Pb-DOPED TiO_2 THIN FILMS

Pb-doped TiO2 photocatalytic thin films were prepared on a soda-lime glass substrate via sol-gel method using TiO2 sol solution containing lead and characterized by X-ray photoelectron spectroscopy (XPS). The results showed that besides oxides of Ti(IV) there is a certain amount of oxides of To(Ⅲ) and Ti(Ⅱ) and Pb exists in the forms of PbTiO3 and PbO. The photocatalytic activity of the Pb-doped TiO2 films was evaluated by the photocatalytic decolorization of aqueous methyl orange and photocatalytic mechanism mas also analyzed.     

Magnetic properties and structure of very thin permalloy films

In order to study the magnetic properties and structure of very thin permalloy films, Ni81Fe19 films of 12 nm in thickness were prepared by different instruments at an ultrahigh base vacuum and a lower base vacuum. The anisotropic magnetoresistance coefficients (△R/R) of Ni81Fe19 (12 nm) films reached 1.6 % and 0.6 %, and the coercivities were 127 and 334 A/m, respectively. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to study the structure and surface chemical state. The experimental results show that the films prepared at the ultrahigh base vacuum have a smoother surface, a bigger grain size and a denser structure with fewer defects than those prepared at the lower base vacuum.     

Photocatalytic activities of amorphous TiO<Subscript>2</Subscript>-Cr thin films prepared by magnetron sputtering

Chrome-doped titanium oxide films were prepared by reactive magnetron sputtering method. The films deposited on glass slides at room temperature were investigated by atom force microscope, X-ray diffractometer, X-ray photoelectron spectroscopy, UV-Vis spectrophotometer, the photoluminescence （PL） and ellipse polarization apparatus. The results indicate that TiO2-Cr film exists in the form of amorphous. The prepared films possess a band gap of less than 3.20 eV, and a new absorption peak. The films, irradiated for 5 h under UV light, exhibit excellent photocatalytic activities with the optimum decomposition rate at 98.5% for methylene blue. Consequently, the thickness threshold on these films is 114 nm, at which the rate of photodegradation is 95% in 5 h. When the thickness is over 114 nm, the rate of photodegradation becomes stable. This result is completely different from that of crystalloid TiO2 thin film.     

Photocatalytic Activities of Amorphous TiO2-Cr Thin Films Prepared by Magnetron Sputtering

Chrome-doped titanium oxide films were prepared by reactive magnetron sputtering method. The films deposited on glass slides at room temperature were investigated by atom force microscope, X-ray diffractometer, X-ray photoelectron spectroscopy, UV-Vis spectrophotometer,the photoluminescence (PL) and ellipse polarization apparatus. The results indicate that TiO2-Cr film exists in the form of amorphous. The prepared films possess a band gap of less than 3.20 eV, and a new absorption peak. The films, irradiated for 5 h under UV light, exhibit excellent photocatalytic activities with the optimum decomposition rate at 98.5% for methylene blue. Consequently, the thickness threshold on these films is 114 nm, at which the rate of photodegradation is 95% in 5 h. When the thickness is over 114 nm, the rate of photodegradation becomes stable. This result is completely different from that of crystalloid TiO2 thin film.     

Study on the thermal stability and electrical properties of the high-k dielectrics (ZrO2)x(SiO2)1?x

(ZrO₂) _x (SiO₂)_1−x (Zr-Si-O) films with different compositions were deposited on p-Si(100) substrates by using pulsed laser deposition technique. X-ray photoelectron spectra (XPS) showed that these films remained amorphous after annealing at 800°C with RTA process in N₂ for 60 s. The XPS spectra indicated that Zr-Si-O films with x=0.5 suffered no obvious phase separation after annealing at 800°C, and no interface layer was formed between Zr-Si-O film and Si substrate. While Zr-Si-O films with x >0.5 suffered phase separation to precipitate ZrO₂ after annealing under the same condition, and SiO₂ was formed at the interface. To get a good interface between Zr-Si-O films and Si substrate, Zr-Si-O films with bi-layer structure (ZrO₂)_0.7(SiO₂)_0.3/(ZrO₂)_0.5(SiO₂)_0.5/Si was deposited. The electrical properties showed that the bi-layer Zr-Si-O film is of the lowest equivalent oxide thickness and good interface with Si substrate. Supported by the National Nature Science Foundation of China (Grant No. 60636010) and the National Basic Research Program of China (“973” Program) (Grant No. 2004CB619004)     

快速热处理的[Fe/Pt]n薄膜的结构和磁性

采用直流磁控溅射方法在Si基片上制备[Fe/Pt]_n薄膜,利用X射线荧光光谱仪(XRF)、X射线衍射仪(XRD)和振动样品磁强计(VSM)分析薄膜的组分、结构和磁性。研究结果表明：[Fe/Pt]_n薄膜经过600 ℃快速热处理,得到了L1₀-FePt薄膜。对于[Fe (x nm)/Pt (0.5 nm)]_n薄膜,当Fe层厚度为0.7 nm时,薄膜的有序度最大,平行膜面和垂直膜面的矫顽力均最高;对于不同调制周期的[Fe/Pt]_n薄膜,有序度随调制周期先增大后减小,平行膜面的矫顽力均高于垂直膜面的矫顽力,当调制周期为2.4 nm时,薄膜平行膜面的矫顽力最大。     

ZrO2薄膜的X射线光电子能谱分析

用X射线光电子能谱 (XPS)对自制ZrO2 薄膜进行了成分分析 .结果发现 ,在基片有负偏压的条件下 ,薄膜发生了氧缺位现象 ,退火处理可以补偿氧缺位 .在膜表面存在一个Y的偏聚层 .分析和讨论了这些现象产生的原因     

衬底效应对LiTaO3薄膜制备的影响

用溶胶凝胶法在N型硅、P型硅、石英、铂、镍衬底上制备了钽酸锂(LiTaO3)薄膜,用XRD和SEM对钽酸锂薄膜性能参数进行了表征;发现掺杂少量环氧树脂能提高钽酸锂薄膜的均匀性,改善薄膜与衬底的粘附性;研究了衬底效应与薄膜厚度的关系,薄膜厚度超过0.2 μm,Ni衬底的XRD峰值强度几乎不再出现,说明衬底对薄膜初始结晶取向有重要影响;利用不同衬底上生长钽酸锂薄膜,XRD研究结果表明:N型硅、P型硅、石英衬底上只能制备多晶钽酸锂薄膜,铂衬底上制备的钽酸锂薄膜在(012)晶向有强大的择优取向性,镍衬底上制备的钽酸锂薄膜有更好的C轴择优取向性,C轴择优取向系数可达0.082。     

Effect of Mg-film thickness on the formation of semiconductor Mg2Si films prepared by resistive thermal evaporation method

Mg fi lms of various thicknesses were deposited on Si(111) substrates at room temperature by resistive thermal evaporation method, and then the Mg/Si samples were annealed at 40 ℃ for 4 h. The effects of Mg fi lm thickness on the formation and structure of Mg2Si fi lms were investigated. The results showed that the crystallization quality of Mg2Si fi lms was strongly infl uenced by the thickness of Mg fi lm. The XRD peak intensity of Mg2Si(220) gradually increased initially and then decreased with increasing Mg fi lm thickness. The XRD peak intensity of Mg2Si(220) reached its maximum when the Mg fi lm of 380 nm was used. The thickness of the Mg2Si fi lm annealed at 400 ℃ for 4 h was approximately 3 times of the Mg fi lm.     

AIB用于改进PLD沉积在机械瓣膜上的类金刚石膜的质量

用脉冲激光沉积(PLD)法在热解C制作的人工心脏机械瓣膜上沉积类金刚石(DLC)薄膜,并用3KeV的氩离子轰击(AIB)DLC薄膜。采用拉曼(Raman)光谱和X射线光电子能谱(XPS)分别对AIB前后的DLC薄膜进行检测分析,用光学显微镜观察AIB前后的DLC薄膜表面。实验结果表明:AIB不影响薄膜的黏附性。但是可以在一定程度上导致薄膜微观结构的变化和sp3/sp2比值的提高,可以在薄膜中掺杂微量的Ar元素,可以有效消除薄膜表面吸附的O,但对薄膜中C-O、C=O和COOH的影响较小。因此,离子轰击法可以作为一种改进类金刚石薄膜质量的方法。     

(110)和(002)择优取向ZnO薄膜的制备及光学性能研究

运用射频溅射法在Si和LaNiO3/Si衬底上分别制备了高度(002)和(110)取向的ZnO薄膜.通过X射线衍射(XRD)和扫描电子显微镜(SEM)表征,发现ZnO/LaNiO3/Si薄膜的(110)取向度高达96%,ZnO/Si薄膜为(002)择优取向,两种薄膜表面均致密平整,晶粒尺寸小于80nm.光致发光结果表明,ZnO/LaNiO3/Si薄膜的光致发光峰主要为带边发射的紫外光,而ZnO/Si薄膜的光致发光峰主要为过量氧导致的缺陷引起的缺陷发光峰.因此,采用LaNiO3薄膜作为ZnO在Si衬底上生长的过渡层,能够有效抑制缺陷发光,改善ZnO薄膜的发光性能.     

组合法制备Pb（ZrxTi（1-x））O3组分梯度薄膜

在无蒸馏和无惰性气氛保护的条件下,快速制备了用于组合合成Pb(ZrxTi1-x)O3薄膜的前驱溶液PT和PZ。采用组合法在Pt/Ti/SiO2/Si衬底上制备了一系列Pb(ZrxTi1-x)O3组分梯度薄膜。经XRD分析表明,薄膜具有钙钛矿结构,择优取向为(111)。SEM结果显示薄膜厚度在500nm左右。电滞回线的测试表明,下梯度薄膜PZT-654表现出良好的铁电性能,明显优于其它薄膜。PZT-654梯度薄膜的剩余极化强度Pr为38.4μC/cm2,矫顽场Ec为75.0kV/cm,有较大的极化偏移,Poffset为12.9μC/cm2,表现出梯度铁电薄膜的特性。     

Surface analysis of chemical stripping titanium alloy oxide films

The chemical stripping method of titanium alloy oxide films was studied. An environment friendly solution hydrogen peroxide and sodium hydroxide without hydrofluoric acid or fluoride were used to strip the oxide films. The morphologies of the surface and cross-section of the oxide films before and after the films stripping were characterized by using scanning electron microscopy (SEM). The microstructure and chemical compositions of the oxide films before and after the films stripping were investigated by using Raman spectroscopy (Raman) and X-ray photoelectron spectroscopy (XPS). It was shown that the thickness of the oxide film was in the range of 5-6 μm. The oxide films were stripped for 2 to 8 min in the solution. Moreover, the effect of the stripping time on the efficiency of the film stripping was investigated, and the optimum stripping time was between 6-8 min. When the stripping solution completely dissolved the whole film, the α/β microstructure of the titanium alloy Ti-10V-2Fe-3Al was partly revealed. The stripping mechanism was discussed in terms of the dissolution of film delamination. The hydrogen peroxide had a significant effect on the dissolution of the titanium alloy anodic oxide film. The feasibility of the dissolution reaction also was evaluated.