共查询到19条相似文献,搜索用时 578 毫秒
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在半导体制造中,光刻胶是重要的原材料之一,本文从转速与膜厚,感光灵敏度,图形变化差等方面对ORM-85光刻胶进行了研究,得出了用于大生产的一套工艺,解决了接触式曝光方式粘版的问题及提高了产能。 相似文献
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电子束直接曝光机简介 总被引:1,自引:0,他引:1
电子束直接曝光机简介郑国强(甘肃平凉市电子部第45研究所,744000)1引言电子束曝光技术是集光、机、电、计算机和超高真空技术为一体的综合性技术,它可以把亚微米工艺的集成电路和器件图形直接光刻在Si和GaAs等圆片上。电子束直接曝光设备在军事微电子... 相似文献
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针对无掩膜光刻技术在进行大面积图形曝光时会出现曝光质量差,精度低,程序繁等问题,该文提出了一种改善无掩膜光刻机图形质量的方法。通过设置“L”型定位标记将图形尺寸进行精确定位,再通过单场图像格式重命名系统,解决大面积图形切割过程中的乱序问题,最后提出了一种寻找最佳曝光位置的方法,以提高单场图形的曝光质量。该文提出了一种减小大面积图形拼接误差的方法,以提高整体图形的拼接质量;同时还提出了一种二次光刻的对准方法及对准误差校正方法,该方法与已有的套刻方法有区别。通过实验进行验证和分析,结果表明,该方法能有效地提高大面积图形的曝光质量,x、y方向的拼接误差距离均缩小到1 μm内,对准误差精度达到±0.3 μm。该研究为后续的光刻工艺及湿法腐蚀工艺奠定了理论基础。 相似文献
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Patrick W. Leech Brett A. Sexton Russell J. Marnock 《Microelectronic Engineering》2002,60(3-4):339-346
The fine-scale features of optically variable devices (OVDs) fabricated in resist by electron beam lithography have been examined using scanning probe microscopy (SPM). These features have included patterns of gratings, micro-text and geometrical images. Scanning probe microscopy has provided information on the groove angle, depth of profile and spatial frequency of the features as determined by the details of processing of the image. The OVD patterns formed in EBR-9 and X-AR-P 7400 resists exhibited a more rounded profile with a lower side-wall angle than in ZEP-7000 and PMMA resists. 相似文献
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Lei Yin Hongzhong Liu Yucheng Ding Hongbo Lan Bingheng Lu 《Microelectronics Journal》2009,40(3):604-6629
This work brings forth the idea of incorporating insulation in the resist used for ultraviolet (UV) curing nanoimprint lithography (NIL). Carbon nanotubes (CNTs) are grown in the space between two insulated resist patterns on the conductive substrate to make CNTs arrays. Two imprinting processes, soft UV curing NIL with DRPPR process and novel NIL without cured residual resist, are presented to achieve the insulation patterns. First the fabricating process is performed using a polydimethylsiloxane (PDMS) stamp. Subsequently, inductively coupled plasma (ICP) is essential to wipe off the residual resist film. To avoid the ICP process, a novel UV curing NIL is presented. Its special hard quartz stamp with chrome shelter can protect the residual resist film out of curing during the UV exposure process, and the uncured resist can be easily removed by ultrasonic vibration in organic solutions. The CNT arrays are prepared on the patterned substrates by the pyrolysis of iron phthalocyanine (FePc). Field emission experiments reveal that the turn-on field of those CNTs arrays is low to 1.3 V/um. 相似文献
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《Microelectronic Engineering》2007,84(5-8):690-693
Near-field lithography (NFL) has no fundamental limit such as the diffraction limit of light. However, in order to fabricate resist patterns with hp 32 nm, thorough optimization of various processes are indispensable. Previously, we reported on the use of fine and ultra-thin top-layer resist, and designs and fabrication of our special masks. In this paper, the effect of the total resist thickness on the near-field distribution is analyzed by the finite-difference time domain analyses and compared with our experiments. For the fabrication of hp 32 nm patterns, the total resist thickness as well as the tri-layer resist process are accordingly optimized. By the near-field exposure using an i-line mercury lamp and the dry-etching process for thin top-layer photo-resist, we have successfully fabricated the hp 32 nm resist pattern of 120 nm height. 相似文献
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This contribution presents a simple quantitative model — the reaction dominated propagation model — for the simulation of the silylation bake in the DESIRE process. This allows to do very effectively simulation of three dimensional silylated resist patterns. The model is discussed and resist calibration is demonstrated for the i-line resist PLASMASK 206-I from JSR-Electronics 相似文献
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Distortion reduction by load release for imprint lithography 总被引:1,自引:0,他引:1
Hansong Li Yucheng Ding Yiping Tang Hongzhong Liu Bingheng Lu 《Microelectronic Engineering》2006,83(3):485-491
Due to the light source limitation and prohibitive cost inherent in conventional photolithography, various nontraditional patterning technologies, such as imprint lithography, electron beam or X-ray lithography have been attempted over the past 10 years. In this paper, a UV imprint lithography process is introduced for patterning sub-micrometer structures by using a soft PDMS mould, and an imprint experimental device with a loading mechanism driven by PZT for generating a time-variant load is described. As shown experimentally, an increased pressing load will reduce the thickness of the resist layer, leading to a reliable etching-through of the resist. It is found, however, that the mechanical pressing can generate geometrical distortion on the patterned resist mainly due to the elasticity. Incorporated with the use of a low viscosity photo-curable resist, a loading process with a load release step is proposed to reduce the geometrical distortion on the resist patterns. In the loading process, the loading force is partially released after the press peak but before the resist curing. Such a loading process can reduce the elastic distortion while attaining a thin remained resist layer. It is shown that this loading process, called Distortion Reduction by Load Release or DRLR simply can be combined with an imprint process for different patterning areas and feature sizes. 相似文献
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《Microelectronic Engineering》2007,84(5-8):1096-1099
The behaviour of a new epoxy based resist (mr-EBL 6000.1 XP) as a negative resist for e-beam lithography is presented. We demonstrate that it is possible to define sub-100 nm patterns when irradiating thin (120 nm) layers of resist with a 10 keV electron beam. The dependence of resolution and remaining thickness on electron dose, electron energy and photo acid generator (PAG) content is determined. After the electron beam lithography process, the resist is used as a mask for reactive ion etching. It presents a good etch resistance, that allows transfer of patterns to the substrate with resolution below 100 nm. 相似文献
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Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate,such as high density biochips, flexible electronics and liquid crystal display screens. 相似文献