Effect of sintering temperature on microstructures and microwave dielectric properties of Ba<Subscript>2</Subscript>MgWO<Subscript>6</Subscript> ceramics

The microwave dielectric properties of Ba₂MgWO₆ ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba₂MgWO₆ ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (? _r ) of 16.8–18.2 and unloaded quality factor (Q _u  × f) of 7000–118,200 GHz were obtained at sintering temperatures in the range 1450–1650 °C for 2 h. A maximum apparent density of 6.76 g/cm³ was obtained for Ba₂MgWO₆ ceramic, sintered at 1650 °C for 2 h. A dielectric constant (? _r ) of 18.4, an unloaded quality factor (Q _u  × f) of 118,200 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?34 ppm/°C were obtained when Ba₂MgWO₆ ceramics were sintered at 1650 °C for 2 h.     

Low temperature sintering and microwave dielectric properties of Zn<Subscript>3</Subscript>Mo<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramic

Crystal structure and dielectric properties of Zn₃Mo₂O₉ ceramics prepared through a conventional solid-state reaction method were characterized. XRD and Raman analysis revealed that the Zn₃Mo₂O₉ crystallized in a monoclinic crystal structure and reminded stable up to1020 °C. Dense ceramics with high relative density (~ 92.3%) were obtained when sintered at 1000 °C and possessed good microwave dielectric properties with a relative permittivity (ε _r ) of 8.7, a quality factor (Q?×?f) of 23,400 GHz, and a negative temperature coefficient of resonance frequency (τ _f ) of around ??79 ppm/°C. With 5 wt% B₂O₃ addition, the sintering temperature of Zn₃Mo₂O₉ ceramic was successfully lowered to 900 °C and microwave dielectric properties with ε _r ?=?11.8, Q?×?f?=?20,000 GHz, and τ _f = ??79.5 ppm/°C were achieved.     

Low-temperature sintering and microwave dielectric properties of MgTiO<Subscript>3</Subscript> ceramics

The effects of CuO–Bi₂O₃–V₂O₅ additions on the sintering temperature and the microwave dielectric properties of MgTiO₃ ceramics were investigated systematically. The CuO–Bi₂O₃–V₂O₅ (CuBiV) addition significantly lowered the densification temperature of MgTiO₃ ceramics from 1400 °C to about 900 °C, which is due to the formation of the liquid-phase of BiVO₄ and Cu₃(VO₄)₂ during sintering. The saturated dielectric constant (ε_r) increased, the maximum quality factor (Qf) values decreased and the temperature coefficient of resonant frequency (τ_f) shifted to a negative value with the increasing CuBiV content, which is mainly attributed to the increase of the second phase BiVO₄. MgTiO₃ ceramics with 6 wt.% CuBiV addition sintered at 900 °C for 2 h have the excellent microwave dielectric properties: ε _r= 18.1, Qf = 20300 GHz and τ_f = −57 ppm/ °C.     

Dielectric properties of B<Subscript>2</Subscript>O<Subscript>3</Subscript> doped Sm(Co<Subscript>1/2</Subscript>Ti<Subscript>1/2</Subscript>)O<Subscript>3</Subscript> ceramics at microwave frequency

The microwave dielectric properties and the microstructures of Sm(Co_1/2Ti_1/2)O₃ ceramics with B₂O₃ additions (0.25 and 0.5 wt%) prepared by conventional solid-state route have been investigated. The prepared Sm(Co_1/2Ti_1/2)O₃ exhibited a mixture of Co and Ti showing 1:1 order in the B-site. Doping with B₂O₃ (up to 0.5 wt%) can effectively promote the densification of Sm(Co_1/2Ti_1/2)O₃ ceramics with low sintering temperature. It is found that Sm(Co_1/2Ti_1/2)O₃ ceramics can be sintered at 1,260 °C due to the grain boundary phase effect of B₂O₃ addition. At 1,290 °C, Sm(Co_1/2Ti_1/2)O₃ ceramics with 0.5 wt% B₂O₃ addition possess a dielectric constant (ε _r) of 27.7, a Q × f value of 33,600 (at 9 GHz) and a temperature coefficient of resonant frequency (τ_f) of −11.4 ppm/ °C. The B₂O₃-doped Sm(Co_1/2Ti_1/2)O₃ ceramics can find applications in microwave devices requiring low sintering temperature.     

Low temperature sintering and microwave dielectric properties of Li<Subscript>3</Subscript>Mg<Subscript>2</Subscript>NbO<Subscript>6</Subscript> ceramics for LTCC application

The Li₃Mg₂NbO₆ ceramics doped with ZnO-B₂O₃-SiO₂ (ZBS) additives were synthesized via the conventional solid-state reaction process. The influence of ZBS additives on phase composition, sintering behavior, microstructure and microwave dielectric properties of Li₃Mg₂NbO₆ ceramics were investigated in detail. The XRD patterns showed that the sintered specimen presented a single phase and no secondary phase appeared. We found that proper amount of ZBS additives could significantly reduce the sintering temperature from 1250 to 925?°C and promote the densification of Li₃Mg₂NbO₆ ceramics. The ε_r and Q?×?f value were strongly affected by bulk density and grain size, respectively. As ZBS content increased, the τ_f value shifted toward negative direction. In summary, excellent microwave dielectric properties of ε_r?~?14.84, Q?×?f?~?73,987 GHz, τ_f?~??16.05 ppm/°C could be obtained in 0.5 wt.% ZBS modified sample when sintered at 925?°C for 4 h. Furthermore, the material was compatible with Ag electrode, demonstrating that it would be a promising candidate material for LTCC application.     

Effects of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> additive on sintering behavior and microwave dielectric properties of ZnTa<Subscript>2</Subscript>O<Subscript>6</Subscript> ceramics

ZnTa₂O₆ ceramics with various amount of Al₂O₃ additive were synthesized by a conventional mixed-oxide route. The grain growth of ZnTa₂O₆ ceramics was accelerated with Al₂O₃ additive. However, excessive addition (>1.0 wt%) of Al₂O₃ leaded to abnormal grain growth. With Al₂O₃ addition, the Al₂O₃ additive did not solubilized into ZnTa₂O₆ structure but resulted in forming the second phase. The Al₂O₃ addition resulted in the lower sintering temperature of ZnTa₂O₆ ceramics and improved microwave dielectric properties. The dielectric constant (ε_r) of the samples did not change much and ranged from 32.41 to 34.33 with different amount of Al₂O₃ addition. The optimized quality factor (Q × f) was higher than 70,000 GHz as a result of the denser ceramics. The temperature coefficient of resonant frequency (τ _f ) of the doped ZnTa₂O₆ ceramics could be optimized to near-zero.     

Effect of nonstoichiometry on the structure and microwave dielectric properties of Ba(Co<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>

Polycrystalline nonstoichiometric Ba(Co_1/3Nb_2/3)O₃ (BCN) materials have been synthesized and investigated. Deviations from stoichiometry have been shown to lead to the formation of crystalline Ba₆CoNb₉O₃₀ (barium deficiency) and Ba₈CoNb₆O₂₄ (cobalt deficiency). The effect of phase composition on the microwave dielectric properties of BCN has been studied. The results demonstrate that the dielectric properties of BCN-based materials can be tuned by varying cobalt content. The materials obtained are high-Q microwave dielectrics with temperature-stable properties.     

Low temperature sintering and microwave dielectric properties of Li<Subscript>6</Subscript>Mg<Subscript>7</Subscript>Ti<Subscript>3</Subscript>O<Subscript>16</Subscript> ceramics with LiF additive for LTCC applications

Li₆Mg₇Ti₃O₁₆ ceramics were prepared by the conventional solid-state method with 1–5 wt% LiF as the sintering aid. Effects of LiF additions on the phase compositions, sintering characteristics, micro-structures and microwave dielectric properties of Li₆Mg₇Ti₃O₁₆ ceramics were investigated. The LiF addition could effectively lower the sintering temperature of Li₆Mg₇Ti₃O₁₆ ceramics from 1550 to 900 °C. For different LiF-doped compositions, the optimum dielectric permittivity (ε _r ) and quality factor (Q·f) values first increased and then decreased with the increase of LiF contents, whereas the temperature coefficient of resonant frequency (τ _f ) fluctuated between ??14.39 and ??8.21 ppm/°C. Typically, Li₆Mg₇Ti₃O₁₆ ceramics with 4 wt% LiF sintered at 900 °C exhibited excellent microwave dielectric properties of ε _r ?=?16.17, Q·f?=?80,921 GHz and τ _f ?=???8.21 ppm/°C, which are promising materials for the low temperature co-fired ceramics applications.     

Influence of CuO and B<Subscript>2</Subscript>O<Subscript>3</Subscript> on sintering and dielectric properties of tungsten bronze type microwave ceramics: a case study in Ba<Subscript>4</Subscript>Nd<Subscript>9.3</Subscript>Ti<Subscript>18</Subscript>O<Subscript>54</Subscript>

The effect of CuO and B₂O₃ co-doping on the sintering behavior, microstructure and microwave dielectric properties of tungsten bronze type Ba₄Nd_9.3Ti₁₈O₅₄ (BNT) ceramics has been investigated by means of a traditional solid-state mixed oxide route. On the one hand, it was indicated that the mixture of CuO and B₂O₃ is an effective sintering aid for BNT matrix compositions owing to the existence of a low-temperature eutectic reaction. On the other hand, it was found that the addition of CuO and B₂O₃ has an obvious effect on microwave dielectric properties of BNT ceramics, depending on the amount of sintering aids, the sample density and microstructure. The liquid phases from sintering aids can promote densification, but simultaneously induce grain growth which tends to decrease the sintering driving force. BNT ceramics doped with 3 wt% CuO–B₂O₃ mixture can be well sintered at 950°C for 4 h and still exhibit relatively good microwave dielectric properties.     

Microwave dielectric properties of Bi(Sc<Subscript>1/3</Subscript>Mo<Subscript>2/3</Subscript>)O<Subscript>4</Subscript> ceramics for LTCC applications

A novel microwave dielectric ceramics Bi(Sc_1/3Mo_2/3)O₄ with low firing temperature were prepared via the solid reaction method. The specimens have been characterized using scanning electron microscopy, X-ray diffraction, Raman spectroscopy and DC conductivity. The Bi(Sc_1/3Mo_2/3)O₄ ceramics showed B-site ordered Scheelite-type structure with space group C2/c. Raman analysis indicated that prominent bands were attributed to the normal modes of vibration of MoO₄ ^2? tetrahedra. The dielectric loss of Bi(Sc_1/3Mo_2/3)O₄ ceramics can be depended strongly the bulk conductivity by DC measurement. The superior microwave dielectric properties are achieved in the Bi(Sc_1/3Mo_2/3)O₄ ceramic sintered at 875 °C/4 h, with dielectric constant?~?25, Q?×?f ~?51,716 GHz at 6.4522 GHz and temperature coefficient of resonance frequency ~???70.4 ppm/°C. It is a promising microwave dielectric material for low-temperature co-fired ceramics technology.     

Synthesis,transport and dielectric properties of polyaniline/Co<Subscript>3</Subscript>O<Subscript>4</Subscript> composites

Conducting polyaniline/cobaltous oxide composites have been synthesized using in situ deposition technique by placing fine graded/cobaltous oxide in polymerization mixture of aniline. The a.c. conductivity and dielectric properties are studied by sandwiching the pellets of these composites between the silver electrodes. It is observed that the values of conductivities increase up to 30 wt% of cobaltous oxide in polyaniline and decrease thereafter. Initial increment in conductivity is due to extended chain length of polyaniline where polarons possess sufficient energy to hop between favourable sites. Beyond 30 wt% of cobaltous oxide in polyaniline, blocking of charge carriers takes place reducing the conductivity values. It can be noted that the value of dielectric constant increases up to 10 wt% of cobaltous oxide. Thereafter, it decreases up to 30 wt% of cobaltous oxide and again increases up to 40 wt% of cobaltous oxide and decreases thereafter. The observed behaviour is attributed to the variation of a.c. conductivity. And it is observed that the dielectric loss increases up to 10 wt% of cobaltous oxide in polyaniline, decreases to a lower value of 20 wt% of cobaltous oxide and increases to 35 wt% and thereafter decreases. These values go in accordance with the values of dielectric constant. The results obtained for these composites are of greater scientific and technological importance.     

Low-temperature sintering and microwave dielectric properties of Mg<Subscript>3</Subscript>B<Subscript>2</Subscript>O<Subscript>6</Subscript>-LMZBS composites

The Mg₃B₂O₆ ceramics with lithium magnesium zinc borosilicate (LMZBS) glass were prepared at a lower sintering temperature. The effects of the glass addition on the densification, phase development, microstructure and microwave dielectric properties of the Mg₃B₂O₆ ceramics were investigated. The addition of LMZBS glass improved the densification and lowered the sintering temperature of Mg₃B₂O₆ ceramics from 1,300 to 950 °C. X-ray diffraction patterns showed that Mg₃B₂O₆ transformed into Mg₂B₂O₅ and a new phase, Li₂ZnSiO₄, crystallized from the glass phase. Because of the high dielectric performance of these phases, Mg₃B₂O₆ mixed with 55 wt% LMZBS sintered at 950 °C for 3 h had ε_r = 6.8, Q × f = 50,000 GHz, and τ_f = ?64 ppm/°C at 7.28 GHz. The chemical compatibility of ceramic-glass composites with Ag was also investigated for LTCC.     

Optimized sintering properties and temperature stability of MgZrTa<Subscript>2</Subscript>O<Subscript>8</Subscript> ceramics with CuO addition for microwave application

Microwave dielectric ceramics CuO–modified MgZrTa₂O₈ were synthesized by the conventional solid-state reaction method. The effects of CuO additives on the sintering characteristics and microwave dielectric properties have been investigated. With CuO addition, the sintering temperature of MgZrTa₂O₈ ceramics can be effectively lowered from 1475 to 1375 °C without decreasing its dielectric properties obviously and the temperature coefficient of the resonant frequency of MgZrTa₂O₈ ceramics have been optimized to near-zero. The crystalline phase exhibited a wolframite crystal structure and no second phase was detected at low addition levels. The grain growth of CuO–modified MgZrTa₂O₈ ceramics was accelerated due to liquid phase effect. The relative dielectric constants (ε_r) were correlated with apparent density and were not significantly different for all levels of CuO concentration. The quality factors (Q?×??) and temperature coefficient of resonant frequency (τ_?), which were strongly dependent on the CuO concentration, were analyzed by the grain size and the dielectric constant respectively. A best Q?×?? value of 116400 GHz and τ_? value of ?6.19 ppm/℃ were obtained for specimen with 0.05 wt% CuO addition at 1375 °C.     

Thermoelectric properties of WO<Subscript>3</Subscript>-based ceramics doped with Co<Subscript>2</Subscript>O<Subscript>3</Subscript>

Tungsten trioxide (WO₃) doped with cobalt sesquioxide (Co₂O₃) was prepared by a conventional mixed oxide processing route and the thermoelectric properties were studied from 300 up to 1,000 K. The addition of Co₂O₃ to WO₃ resulted in an increase in both the grain size and porosity, indicating that Co₂O₃ promotes the grain grown of WO₃. The magnitude of the electrical conductivity (σ) and the absolute value of the Seebeck coefficient (|S|) depended strongly on the Co₂O₃ content. As for the power factor (σS ² ), the 5.0 mol% sample has the maximum value of the power factor which is 0.12 μWm⁻¹K⁻² at 873 K.     

The effect of sintering temperature on magnetic and dielectric properties of Ho<Subscript>3</Subscript>Fe<Subscript>5</Subscript>O<Subscript>12</Subscript> ceramics

Ho₃Fe₅O₁₂ ceramics were fabricated by the solid-state reaction method. The results revealed an increase of the grain size, dielectric constant, and dielectric loss, while a decrease of the remnant magnetization and coercive field with increasing sintering temperature. A dielectric relaxation behavior was observed, which might be associated with the charge carrier hopping between Fe²⁺ and Fe³⁺. A cole–cole fitting to loss peaks revealed a dependence of the activation energy and the broaden factor on the relative density of the samples. Furthermore, at appropriate frequencies, the 1250 °C-sintered samples showed high dielectric constant, low dispassion, and good temperature stability around room temperature.     

Synthesis and microwave absorption property of ternary composites: polyaniline/CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/Ba<Subscript>3</Subscript>Co<Subscript>2</Subscript>Fe<Subscript>24</Subscript>O<Subscript>41</Subscript>

Polyaniline (PANI)/CoFe₂O₄/Ba₃Co₂Fe₂₄O₄₁ composite was prepared by an in-situ polymerization method. The phase structure, morphology and magnetic properties of the as-prepared PANI/CoFe₂O₄/Ba₃Co₂Fe₂₄O₄₁ composite were characterized by XRD, FT-IR, SEM, TEM, and VSM, respectively. The microwave absorption properties of the composite were investigated by using a vector network analyzer in the 2–18 GHz frequency range. The results show that the maximum reflection loss value of the PANI/CoFe₂O₄/Ba₃Co₂Fe₂₄O₄₁ composite reaches ?30.5 dB at 10.5 GHz with a thickness of 3 mm and the bandwidth of reflection loss below ?10 dB reaches up to 1.2 GHz. The excellent microwave absorption properties of the as-prepared PANI/CoFe₂O₄/Ba₃Co₂Fe₂₄O₄₁ composite due to the enhanced impedance match between dielectric loss and magnetic loss.     

Luminescence properties of Bi codoped and P codoped Ca<Subscript>3</Subscript>(VO<Subscript>4</Subscript>)<Subscript>2</Subscript>:Eu<Superscript>3+</Superscript>

New red emitting phosphors, Ca₃(VO₄)₂:Eu³⁺,Bi³⁺, Ca₃((P,V)O₄)₂:Eu³⁺ were synthesized by low temperature solid-state reaction and characterized by X-ray diffraction, scanning electron microscopy, photoluminescence spectra and Fourier transform infrared spectroscopy. The results show that the red emission located at about 613 nm was ascribed to ⁵ D ₀-⁷ F ₂ transition of Eu³⁺. The effect of by Bi doping and by P doping was also investigated systematically.