(Li,Nb)掺杂SnO_2压敏材料的电学非线性研究

研究了掺锂对 Sn O2 压敏电阻器性能的影响。研究发现 L i 对 Sn4 的取代能明显提高陶瓷的烧结速度和致密度 ,且能大幅度改善材料的电学非线性性能。掺入 x(L i2 CO3)为 1.0 %的陶瓷样品具有最高的密度 (ρ=6 .77g/ cm3)、最高的介电常数 (ε=185 1)、最低的视在势垒电场 (EB=6 8.86 V/ mm)和最高的非线性常数 (α=9.9)。对比发现 ,Na 由于具有较大的离子粒半径 ,其掺杂改性性能相对较差。提出了 Sn O2 · L i2 CO3· Nb2 O5晶界缺陷势垒模型     

稀土Ce对SnO2·Co2O3·Nb2O5压敏性能的影响

研究了掺Ce对SnO2·Co2O3·Nb2O5压敏电阻器性能的影响。研究发现Ce4+对Sn4+的取代能明显提高陶瓷的致密度,掺入x(CeO2)为0.05的陶瓷样品具有最高的密度(ρ=6.71g/cm3),最高的视在势垒电场(EB=413.6V/mm),最高的非线性系数(α=13.8),最高的势垒电压和最窄的势垒厚度。为了解释样品电学非线性性质的起源,该文提出了SnO2·Co2O3·Nb2O5·CeO2晶界缺陷势垒模型。同时,对该压敏电阻器进行了等效电路分析。试验测量与等效电路分析结果相符。     

钕掺杂对SnO_2·Co_2O_3·Nb_2O_5压敏电阻瓷电性能的影响

通过对样品的伏安特性,晶界势垒的测量和分析,研究了Nd2O3对SnO2·Co2O3·Nb2O5压敏电阻瓷电性能的影响。发现掺入x(Nb2O3)为0.050%的样品表现出最好的压敏性质,其压敏电压为460.69 V/mm,密度为6.812 g/cm3,非线性系数为18.7。为了说明电学非线性的起源,提出了SnO2压敏材料的一个缺陷势垒模型。     

SiO_2掺杂SnO_2-ZnO-Nb_2O_5压敏陶瓷的电学特性

研究了 Si O2 掺杂对 Sn O2 - Zn O- Nb2 O5 压敏陶瓷的影响。实验结果表明 ,Si O2 可以十分显著地影响Sn O2 - Zn O- Nb2 O5 压敏陶瓷的物理和电子性质。掺杂范围为 0 .0 5 %～ 0 .40 % (摩尔分数 )时 ,材料密度在 6.2 1～ 6.5 6g/ cm3之间变动 ,非线性系数在 7.42～ 12 .80之间。烧失率、势垒电压和非线性系数的测量均表明 :掺有x (Si O2 ) =0 .2 %的 Sn O2 - Zn O- Nb2 O5 压敏陶瓷的非线性最好 ,其势垒电压为 0 .67e V,非线性系数达 12 .80     

MnCO_3掺杂对SnO_2·Ni_2O_3·Nb_2O_5压敏材料性能的影响

研究并分析了 Ni3+ 掺杂和 Co2 + 掺杂对 Sn O2 压敏电阻致密度和电学非线性性能的影响。研究了掺Mn2 +对 Sn O2 · Ni2 O3· Nb2 O5压敏材料性能的影响。发现 x(Mn CO3)为 0 .10 %时 ,压敏电阻具有最高的视在电场(EB=6 86 .89V/ m m)和最好的电学非线性性能 (α=12 .9)。样品的收缩率和致密度变化趋势不一致 ,这是因为样品的致密度是由收缩率和 Mn CO3的挥发量两因素共同决定的     

SiO_2对SnO_2·CoO·Nb_2O_5压敏电阻非线性电学性质的影响

对 Si O2 掺杂的 Sn O2 · Co O· Nb2 O5 压敏电阻非线性电学性质进行了研究 ,并对其微观结构进行了电镜扫描 ,且对其晶界势垒高度进行了测量。实验表明 x(Si O2 ) =0 .3%掺杂的 Sn O2 · Co O· Nb2 O5 压敏电阻的非线性系数 α高达 30 ,并且具有最高的击穿电场 (375 V/ mm)。采用 Gupta- Carlson缺陷模型对晶界肖特基势垒高度随Si O2 的添加而变大的现象进行了理论解释。     

掺Y对二氧化钛低压压敏陶瓷性能的影响

通过对样品密度、介电常数、I-V特性及晶界势垒特性的测定和分析,研究掺Y对(Y,Nb)掺杂的二氧化钛低压压敏-电容性能的影响.掺入x(Y2O3)0.60%的样品显示出最高的非线性常数(α=7.86)以及最高的相对介电常数(εr=8.54×104)和样品密度(可达理论密度的98.8%),与该样品最高且窄的晶界缺陷势垒相一致,是一种较为理想的压敏-电容陶瓷.提出了TiO2@Y2O3@Nb2O5晶界缺陷势垒模型.     

Nb掺杂对ZnO压敏陶瓷电学性能的影响

研究了Nb2O5对ZnO压敏材料电学性能的影响。当x(Nb2O5)从0增加到1％时，ZnO压敏电阻的击穿电压从209V／mm降至0．70V／mm，40Hz时，样品电阻从0．21MΩ降至48．3Ω，1kHz时的相对介电常数从831增大到42200。晶界势垒高度测量表明：在实验范围内，Nb对势垒高度的影响较小。ZnO晶粒的变大是压敏电压急剧降低和介电常数增大的主要原因。对Nb掺杂量的增加引起样品阻抗减小的根源进行了解释。     

（Li,Nb）掺杂SnO2压敏材料的电学非线性研究

研究了掺锂对SnO2压敏电阻器性能的影响.研究发现Li+对Sn4+的取代能明显提高陶瓷的烧结速度和致密度,且能大幅度改善材料的电学非线性性能.掺入x(Li2CO3)为1.0%的陶瓷样品具有最高的密度(P=6.77g/cm3)、最高的介电常数(ε=1851)、最低的视在势垒电场(EB=68.86V/mm)和最高的非线性常数(α=9.9).对比发现,Na+由于具有较大的离子粒半径,其掺杂改性性能相对较差.提出了SnO2@Li2CO3@Nb2O5晶界缺陷势垒模型.     

TiO2系压敏陶瓷施主掺杂研究

研究了Ta2O5和Nb2O5掺杂对TiO2系压敏陶瓷电性能的影响。采用电子陶瓷制备工艺,制备了两组TiO2系压敏陶瓷,借助热电子发射理论,分析了样品的I-V特性及介电频谱特性。结果发现,Ta2O5掺杂的样品具有最低的压敏电压(E10mA=5.03 V.mm–1)和最大的视在介电常数(εra=1.5×105)。     

GEMNET: a generalized, shuffle-exchange-based, regular, scalable,modular, multihop, WDM lightwave network

GEMNET is a generalization of shuffle-exchange networks and it can represent a family of network structures (including ShuffleNet and de Bruijn graph) for an arbitrary number of nodes. GEMNET employs a regular interconnection graph with highly desirable properties such as small nodal degree, simple routing, small diameter, and growth capability (viz. scalability). GEMNET can serve as a logical (virtual), packet-switched, multihop topology which can be employed for constructing the next generation of lightwave networks using wavelength-division multiplexing (WDM). Various properties of GEMNET are studied     

Thermodynamics of copper matte converting: Part III. Steady-state volatilization of Au,Ag, Pb,Zn, Ni,Se, Te,Bi, Sb,and As from slag,matte, and metallic copper

A comprehensive compilation of various thermodynamic data required for a complete analysis of copper matte converting reactions is presented. The data comprise estimated free energies of formation for such gases as SeO, SeS, TeO, TeS, BiO, BiS, SbO, SbS, AsO, and AsS, as well as activity coefficients in dilute copper alloys and vapor pressures of various elements and compounds. The volatilization of minor elements in steady-state reactors comprising gas and several condensed phases is mathematically formulated, and a parameter which governs the volatilization in such reactors is defined and named volatilization constant. The vapor pressures of various volatile species are calculated thermodynamically for the Noranda Process reactor by assuming equilibrium conditions. The volatilization constants of various minor elements are expressed explicitly as functions of oxygen and sulfur activities. Formerly Associate Professor, Department of Metallurgical Engineering, University of Utah, Salt Lake City, UT     

PBX技术.市态.营销.选购

本文介绍了ＰＢＸ交换机的技术及市场需求态势。并提出ＰＢＸ产品的营销要素及其用户在选购时应遵循的原则。     

Bits, symbols, bauds, and bandwidth

The use of clear, concise, and unambiguous language in telecommunications engineering is vital to communicate a desired meaning and understanding. Terminology should be based on rigorous engineering principles and traceable to well known and dependable sources. This article deals with four everyday terms commonly encountered in the popular semi-technical press as well as in serious engineering periodicals. The misuse of these and other terms can lead to low-balled cost proposals, court litigation, and patent infringement cases. Imagine how an engineering student can be confused when she/he typically encounters bandwidth measured in bits per second     

人工智能时代“微机原理与接口技术”教学探讨

本文简述了在人工智能时代，我们的“微机原理与接口技术”课程教学团队基于线下线上混合教学模式，开展微机原理与接口技术的关键知识单元讲解的同时，实时课程思政，讲好微机原理的新故事；如何培养学生自主探索式学习技能，在课程基本知识单元学习的基础上扩展延伸相关深度学习、GPU技术、Python语言、FPGA技术等人工智能方面的知识单元的探究与学习，使得课程学习与人工智能的前沿发展相结合，理论联系实际，吸引和培养学生对该课程学习的兴趣和整体知识面扩展，这对于我们培养具有自主创新的科学探索精神的高素质专业人才具有重要的现实意义。     

Novel planar, square-shaped, dielectric-waveguide, single-, and dual-mode filters

This paper presents a novel concept of a square-shaped dielectric-waveguide resonator, which can easily realize a dielectric-waveguide cross-coupled filter or a dielectric-waveguide dual-mode filter, using the conventional printed circuit board (PCB) process. This planar dielectric-waveguide resonator has a higher Q value than a microstrip resonator. The physical mechanisms of both single- and dual-mode filters are elucidated. Some new coupling structures are developed for undergoing the PCB process. Filter design procedures are detailed. Design curves for the coupling coefficients of internal- and external-coupling structures are determined by full-wave finite-element-method electromagnetic calculations. Measurement results are highly consistent with theory for all trial filters. This study offers an effective means of producing low-cost high-performance planar circuit filters.