Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions

Wurtzite GaN epilayers irradiated at room temperature with 308 MeV ¹²⁹Xe³⁵⁺ ions to fluences of 1 × 10¹³ and 3 × 10¹³ cm⁻² have been studied by contact mode atomic force microscopy (AFM), high-resolution X-ray diffraction (HRXRD), micro-Raman scattering and photoluminescence (PL) spectroscopy. The AFM images showed that the surface of GaN films was etched efficiently due to the Xe ion irradiation. The initial step-terrace structure on GaN surface was eliminated completely at a fluence of 3 × 10¹³ cm⁻². HRXRD and Raman results indicated that the Xe ion irradiation led to a homogenous lattice expansion throughout the entire ∼3 μm-thick GaN films. The lattice expansion as well as the biaxial compressive stress of the films was increasing with the increase of ion fluence. PL measurements showed that a dominant yellow luminescence band in the as-grown GaN films disappeared, but a blue and a green luminescence bands were produced after irradiation. Based on these results, the strong electronic excitation effect of 308 MeV Xe ions in GaN is discussed.     

Single- and multiple-electron loss cross-sections for fast heavy ions colliding with neutrals: Semi-classical calculations

Extensive calculations of single, multiple and total electron-loss cross-sections of fast heavy ions in collisions with neutral atoms are performed in the semi-classical approximation using the DEPOSIT code based on the energy deposition model and statistical distributions for ionization probabilities. The results are presented for Ar¹⁺, Ar²⁺, Kr⁷⁺, Xe³⁺, Xe¹⁸⁺, Pb²⁵⁺ and U^q+ (q = 10, 28, 39, 62) ions colliding with H, N, Ne, Ar, Kr, Xe and U atoms at energies E > 1 MeV/u and compared with available experimental data and the n-particle classical-trajectory Monte Carlo (nCTMC) calculations. The results show that the present semi-classical model can be applied for estimation of multiple and total electron-loss cross-sections within accuracies of a factor of 2.From calculated data for the total electron-loss cross-sections σ_tot, their dependencies on relative velocity v, the first ionization potential I₁ of the projectile and the target atomic number Z_A are found and a semi-empirical formula for σ_tot is suggested. The velocity range, where the semi-classical approximation can be used, is discussed.     

Proton sputtering from polycrystalline Al surface interacting with highly charged ions at grazing incidence angle

Sputtering processes of protons from a polycrystalline Al surface interacting with Ar^q+ (q = 3-14) ions at a grazing incidence angle (∼0.5°) were investigated. The intensity of protons (I_H) detected in coincidence with scattered Ar atoms was measured as a function of q. I_H saturated at q ? 10, although it increased rapidly with q at 3 ? q ? 8. The angular distribution of protons with low kinetic energy (?2 eV) began to deviate from the cosine distribution and assumed a rather flat equidistribution as q increased. To analyze the sputtering processes of protons at the grazing incidence angle, a modified model of the “above-surface potential sputtering model” was proposed by considering image acceleration of projectile ions.     

Potential energy threshold of surface erosion on GaN by impact of slow highly charged heavy ions

In the present work the erosion behavior on the surface of GaN epi-layer by the impact of various slow highly charged heavy ions (SHCIs, including Ar^q+, Xe^q+ and Pb^q+, in two incidence geometries) was investigated. Atomic force microscopy reveals a well-defined threshold of potential energy carried by the incident heavy ions accounting for the surface erosion. This threshold also depends on the projected range of the SHCIs, the longer the projected range, the higher the potential energy required for the onset of surface erosion. And the etched depth is close to a linear function of potential energy deposited, increasing with the potential energy increases. Moreover, the etching rate for 60° off normal incidence is by more than a factor of 2 larger than etching rate for normal incidence, and the etch rate by Xe^q+ is larger than by Pb^q+ under the same potential energy and incident direction. And a mechanism is discussed.     

Nano-structure formation due to impact of highly charged ions on HOPG

Highly ordered pyrolitic graphite (HOPG) was irradiated with slow highly charged Ar^q+ and Xe^q+ ions in a kinetic energy range of 150-360 keV and has been observed by scanning probe microscopy. Nano-sized hillock-like structures are found for all charge states and kinetic energies with both the scanning tunneling microscope and the atomic force microscope. However in the latter case, the dependence of the detected structures on scan conditions points towards a surface modification which manifests itself only in frictional forces and therefore in height measurement artifacts. Furthermore the generated defects are not stable but can be erased by continuous scanning in contact mode.     

Molybdenum L-shell X-ray production by 350-600 keV Xe (q = 25-30) ions

Molybdenum L-shell X-rays were produced by Xe^q+ (q = 25-30) bombardment at low energies from 2.65 to 4.55 keV/amu (350-600 keV). We observed a kinetic energy threshold of Mo L-shell ionization down to 2.65-3.03 keV/amu (350-400 keV). The charge state effect of the incident ions was not observed which shows that the ions were neutralized, reaching an equilibrium charge state and losing their initial charge state memory before production of L-shell vacancies resulted in X-ray production. The experimental ionization cross sections were compared with those from Binary Encounter Approximation theory. Taking into account projectile deflection in the target nuclear Coulomb field, the ionization cross section of Mo L-shell near the kinetic energy threshold was well described.     

380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the ⁵D₀→⁷F₂ transition in Eu³⁺ kept the initial PL intensity after the proton irradiation up to . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment.     

Investigations on the effect of 100 MeV Ni ions irradiated chloride vapour phase epitaxy (Cl-VPE) grown GaN epilayers

Gallium nitride (GaN) epilayers have been grown by chloride vapour phase epitaxy (Cl-VPE) technique and the grown GaN layers were irradiated with 100 MeV Ni ions at the fluences of 5 × 10¹² and 2 × 10¹³ ions/cm². The pristine and 100 MeV Ni ions irradiated GaN samples were characterized using X-ray diffraction (XRD), UV-visible transmittance spectrum, photoluminescence (PL) and atomic force microscopy (AFM) analysis. XRD results indicate the presence of gallium oxide phases after Ni ion irradiation, increase in the FWHM and decrease in the intensity of the GaN (0 0 0 2) peak with increasing ion fluences. The UV-visible transmittance spectrum and PL measurements show decrease in the band gap value after irradiation. AFM images show the nanocluster formation upon irradiation and the roughness value of GaN increases with increasing ion fluences.     

Scintillation light produced by low-energy beams of highly-charged ions

Measurements have been performed of scintillation light intensities emitted from various inorganic scintillators irradiated with low-energy beams of highly-charged ions from an electron beam ion source (EBIS) and an electron cyclotron resonance ion source (ECRIS). Beams of xenon ions Xe^q+ with various charge states between q = 2 and q = 18 have been used at energies between 5 and 17.5 keV per charge generated by the ECRIS. The intensity of the beam was typically varied between 1 and 100 nA. Beams of highly charged residual gas ions have been produced by the EBIS at 4.5 keV per charge and with low intensities down to 100 pA. The scintillator materials used are flat screens of P46 YAG and P43 phosphor. In all cases, scintillation light emitted from the screen surface was detected by a CCD camera. The scintillation light intensity has been found to depend linearly on the kinetic ion energy per time deposited into the scintillator, while up to q = 18 no significant contribution from the ions’ potential energy was found. We discuss the results on the background of a possible use as beam diagnostics, e.g. for the new HITRAP facility at GSI, Germany.     

Separation of potential and kinetic electron emission from Si and W induced by multiply charged neon and argon ions

The total secondary electron emission yields, γ_T, induced by impact of the fast ions Ne^q+ (q = 2-8) and Ar^q+ (q = 3-12) on Si and Ne^q+ (q = 2-8) on W targets have been measured. It was observed that for a given impact energy, γ_T increases with the charge of projectile ion. By plotting γ_T as a function of the total potential energy of the respective ion, true kinetic and potential electron yields have been obtained. Potential electron yield was proportional to the total potential energy of the projectile ion. However, decrease in potential electron yield with increasing kinetic energy of Ne^q+ impact on Si and W was observed. This decrease in potential electron yield with kinetic energy of the ion was more pronounced for the projectile ions having higher charge states. Moreover, kinetic electron yield to energy-loss ratio for various ion-target combinations was calculated and results were in good agreement with semi-empirical model for kinetic electron emission.     

A high charge state all-permanent magnet ECR ion source for the IMP 320 kV HV platform

A 320 kV high voltage (HV) platform has been constructed at Institute of Modern Physics (IMP) to satisfy the increasing requirements of experimental studies in some heavy ion associated directions. A high charge state all-permanent magnet ECRIS-LAPECR2 has been designed and fabricated to provide intense multiple charge state ion beams (such as 1000 eμA O⁶⁺, 16.7 eμA Ar¹⁴⁺, 24 eμA Xe²⁷⁺, etc.) for the HV platform. LAPECR2 has a dimension of ∅ 650 mm × 560 mm. The powerful 3D magnetic confinement to the ECR plasma and the optimum designed magnetic field for the operation at 14.5 GHz makes it possible to obtain very good performances from this source. After a brief introduction of the ECRIS and accelerator development at IMP, the conceptual design of LAPECR2 source is presented. The first test results of this all-permanent magnet ECRIS are given in this paper.     

Electron emission by highly charged neon and xenon ions on fusion-relevant tungsten and graphite surfaces

Here we report highly charged ⁴⁰Ne^q+ (q = 3-8) and ¹²⁹Xe^q+ (q = 10-30) ion-induced secondary electron emission on the tungsten and highly oriented pyrolytic graphite (HOPG) surfaces. The total secondary electron yield is measured as a function of the potential energy of incident ion. The experimental data is used to separate contributions of kinetic and potential electron yields. We estimate roughly 10% of ion’s potential energy is consumed in potential electron emission. The rest of the ion’s potential energy is responsible for the sputtering and material modification.     

Clarification of high density electronic excitation effects on the microstructural evolution in UO2

In order to understand the properties of ion tracks and the microstructural evolution under accumulation of ion tracks in UO₂, 100 MeV Zr¹⁰⁺ and 210 MeV Xe¹⁴⁺ ions irradiation examinations have been done at a tandem accelerator facility of JAEA-Tokai, and it has been observed the microstructure by means of a transmission electron microscope (TEM) and a scanning electron microscope (SEM) in CRIEPI.Comparison of the diameter of ion tracks between UO₂ and CeO₂ under irradiation with 100 MeV Zr¹⁰⁺ and 210 MeV Xe¹⁴⁺ ions at room temperature clarify that the sensitivity on high density electronic excitation of UO₂ is much less than that of CeO₂. By the cross-sectional observation of UO₂ under irradiation with 210 MeV Xe¹⁴⁺ ions at 300 °C, elliptical changes of fabricated pores that exist till ∼6 μm depth and the formation of dislocations have been observed in the ion fluence over 5 × 10¹⁴ ions/cm². The drastic changes of surface morphology and inner structure in UO₂ indicate that the overlapping of ion tracks will cause the point defects, enhance the diffusion of point defects and dislocations, and form the sub-grains at relatively low temperature.     

Effects of swift heavy ion irradiation on band gap of strained AlGaN/GaN Multi Quantum Wells

III-Nitrides have attracted much attention due to their versatile and wide range of applications, such as blue/UV light emitting diodes. Strained layer super lattices offer extra degree of freedom to alter the band gap of lattice-mismatched hetero-structures. Swift Heavy Ion (SHI) irradiation is a post growth technique to alter the band gap of semiconductors, spatially. In the present study, strained AlGaN/GaN Multi Quantum wells (MQWs) were grown on sapphire with insertion of AlN and GaN as buffer layers between substrate and epi-layers by MOCVD. These buffer layers are known to improve the structural and optical properties. Such grown AlGaN/GaN MQWs were irradiated with 200 MeV Au ions at a fluence of 5 × 10¹¹ ions/cm². As grown and irradiated samples have been characterized by HRXRD and PL. The analysis of symmetrical and asymmetrical reciprocal space mapping gives information on perpendicular and in-plane strain. Measured values show that lattice mismatch increases upon irradiation. However, increase in the mismatch upon irradiation has affected the band gap of MQWs, which has been confirmed by PL measurements. PL shows that there is an increase of intensity of luminescence of GaN and MQWs by one order of magnitude upon irradiation, which is attributed to SHI induced dynamic annealing processes.     

Interaction potentials for modeling of ion-surface scattering

Accurate potential data for system Ar⁺, С⁺, Cd⁺, Kr⁺, Ne⁺, Xe⁺, Zn⁺-Xe, Ar⁺-Ar and Ne⁺-Ne were obtained by analyzing the scattering cross-sections. These data extend the existing database of potentials obtained experimentally. To fit better the existing data, a new analytical form of the potential is proposed. The fitting errors analysis shows that the universal potential can be used only for the systems with nuclear charges Z > 18 and in the region where the distances of closest approach are less than R < 8 a_f (here a_f is the Firsov screening length (see below)). The model of individual potentials is suggested, which extends the region of potential application and minimizes the fitting errors.     

Observation of K- and L-REC in 200 MeV/u Xe-N2 collisions at HIRFL-CSR

The 200 MeV/u Xe⁵⁴⁺ ions were utilized to collide with N₂ molecules and the K- and L-REC, as well as the Lyman lines of Xe⁵³⁺ were observed. After electron cooling, the ion beam momentum spread ΔP/P ≈ 2.2 × 10⁻⁵ was achieved and the target thickness was stabilized at about 10¹³ atom/cm². As the first atomic experiment at HIRFL-CSR with the internal target, its feasibility and stability were verified.     

Structural modification in amorphous silica after exposure to low fluence 355 nm laser irradiation

UV laser irradiation induced structural modification in amorphous silica was characterized using Fourier transform infrared and X-ray induced photoelectron spectroscopy. Laser irradiation experiment was conducted using a 3ω, 355 nm beam from a pulsed Nd-YAG laser with pulse length of 6.8 ns and laser repetition rate of 1 Hz at ambient conditions. The examined laser fluence was controlled at a relatively low level, ranging from 0 to 4 J/cm². The IR spectra revealed that the vibration frequency of the rocking mode of SiOSi covalent bond shifted to lower wave number, while the bending mode and asymmetric stretching mode of SiOSi covalent bond shifted to higher frequency. This result suggested that the length of SiOSi covalent bond was decreased, the bond angle was increased and the irradiation modified material was densified after irradiation. The high resolution XPS spectra of Si 2p and O 1s illustrated the chemical shift of silicon and oxygen ions after irradiation. The XPS chemical shift of the Si 2p peak about 1.1 eV revealed the existence of low valence silicon ions Si³⁺ species in silica glass after irradiation. The chemical shift of the O 1s peak about 0.9 eV illustrated the emergence of non-bridging oxygen ions during laser irradiation. The deconvoluted peak area and FWHM value of low valence silicon ions and non-bridging oxygen ions all exhibited exponentially growth as the linearly elevation of laser fluence. UV laser-induced photolysis of SiO covalent bond was suggested to be responsible for the formation and increase of low valence silicon ions and non-bridging oxygen ions. These FT-IR and XPS data revealed that short range structural modifications were important structure alterations in silica glass before the emergence of distinct and large size damage crater.     

Ion-induced electron emission monitoring of the structure and morphology evolution in HOPG

The temperature dependences of the ion-induced electron emission yield γ of highly-oriented pyrolytic graphite (HOPG) under high-fluence (10¹⁸-10¹⁹ ions/cm²) 30 keV Ar⁺ ion irradiation at ion incidence angles from θ = 0^o (normal incidence) to 80^o have been measured to trace both the structure and morphology changes in the basal oriented samples. The target temperature has been varied during continuous irradiation from T = −180 to 400 ^oC. The surface analysis has been performed by the RHEED and SEM techniques. The surface microgeometry was studied using laser goniophotometry (LGF). The dependences of γ(T) were found to be strongly non-monotonic and essentially different from the ones for Ar⁺ and N₂⁺ ion irradiation of the polygranular graphites. A sharp peak at irradiation temperature T_p ≈ 150 ^oC was found. A strong influence of electron transport anisotropy has been observed, and ion-induced microgeometry is discussed.     

Autoionization of N (q = 1-3) Rydberg states produced in high-energy collisions with He

Energy spectra of electrons ejected through autoionization decay of high-Rydberg states in high-energy collisions of N^q+ (q = 1-3) with He have been measured with high-resolution by using zero-degree electron spectroscopy. Several series of autoionizing lines were observed, corresponding to decays from N³⁺ 1s²2p(²P)nl Rydberg states produced in N³⁺ + He collisions, from N²⁺ 1s²2s2p(³P)nl Rydberg states produced in N²⁺ + He and from N⁺ 1s²2s2p²(⁴P)nl Rydberg states produced in N⁺ + He, respectively. Angular momentum distributions for the first or second peak of three series of Coster-Kronig electron transitions for N^q+ (q = 1-3) projectiles are also discussed, where the highly excited states are formed by electron excitation.     

Polarization effects on the cross-section of ion-atom collisions

Coupled-channel cross-sections for electron capture, ionization and electron loss due to polarization effects are calculated. The maximum impact parameter for electron escape is analyzed within the classical framework. The probabilities of ionization and capture are analyzed simultaneously by a semi-empirical method. Differing from the n-body classical trajectory Monte Carlo method, the condition for electron escape is determined by Coulomb forces related to the two nuclei. This method can be used to calculate coupled-channel cross-sections rather than single-channel ones in other methods. Therefore the calculated results can be compared with experimental data directly. In the low energy range, neglecting the ionization effect, the single-capture cross-sections of hydrogen atoms induced by various partially-stripped ions were calculated. In the high energy range, neglecting the capture effect on ionization, the pure-ionization cross-sections of neon atoms induced by Ne^q+ (q = 4, 6, 8) and Ar^q+ (q = 4, 6, 8, 10) at an incident energy E = 1.05 MeV/u were calculated. Good agreement was found between our calculation and experimental data in the literature. This method had been partially applied for intermediate energy successfully.