Dielectric and mechanical properties of porous Si3N4 ceramics prepared via low temperature sintering

Borophosphosilicate bonded porous silicon nitride (Si₃N₄) ceramics were fabricated in air using a conventional ceramic process. The porous Si₃N₄ ceramics sintered at 1000–1200 °C shows a relatively high flexural strength and good dielectric properties. The influence of the sintering temperature and contents of additives on the flexural strength and dielectric properties of porous Si₃N₄ ceramics were investigated. Porous Si₃N₄ ceramics with a porosity of 30–55%, flexural strength of 40–130 MPa, as well as low dielectric constant of 3.5–4.6 were obtained.     

Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO₂-doped CaSiO₃ ceramics were successfully synthesized by a solid-state method. Effects of different SnO₂ additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn_1−xSi_x)O₃ (x=0.5–1.0) ceramics have been investigated. SnO₂ improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn⁴⁺ substituting for Si⁴⁺ sites leads to the emergence of Ca₃SnSi₂O₉ phase, which has a positive effect on the dielectric properties of CaO–SiO₂–SnO₂ materials, especially the Qf value. The Ca(Sn_0.1Si_0.9)O₃ ceramics sintered at 1375 °C possessed good microwave dielectric properties: ε_r =7.92, Qf =58,000 GHz and τ_f=−42 ppm/°C. The Ca(Sn_0.4Si_0.6)O₃ ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of ε_r=9.27, Qf=63,000 GHz, and τ_f=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.     

In situ preparation of SiC/Si3N4-NW composite powders by combustion synthesis

Large-scale composite powders containing silicon carbide (SiC) particles and silicon nitride nanowires (Si₃N₄-NWs) were synthesized in situ by combustion synthesis (CS). In this process, a mixture of silicon, carbon black, polytetrafluoroethylene (PTFE) and a small amount of iron powders was used as the precursor. The products were characterized by XRD, SEM, EDS and TEM. The particles are equiaxed with diameters in the micron range, and the in situ formed nanowires are straight with uniform diameters of 20-350 nm and lengths of tens of microns. The Si₃N₄-NWs are characterized to be α-phase single crystals grown along the [1 0 1] or [1 0 0] direction. VLS and SLGS processes are proposed as the growth mechanisms of the nanowires. The as-synthesized powders have great potential for use in the preparation of high-performance SiC/Si₃N₄-NW composites.     

Microstructure and mechanical properties of Si3N4/42CrMo joints brazed with TiNp modified active filler

Si₃N₄ ceramic/42CrMo steel joints were obtained by employing TiNp modified Ag–Cu–Ti active filler and subsequently the effect of TiNp content on the microstructure and mechanical properties of the joints was investigated. Microstructural examination revealed that TiN+Ti₅Si₃ reaction layer was adjacent to the Si₃N₄ ceramic while a TiC reaction layer was close to the steel substrate. With the increase of TiNp content, more fine grains and less Ag–Cu eutectic appeared in the joint and the reaction layers near the two base materials became thinner. The flexural strength of the joint obtained by four-point bending test climbed about 100% with the optimum TiNp content of 5 vol%, comparing with the case without TiNp. Thermal stress distributions in the joint were analyzed using finite element modeling computations, which accorded well with the bending test results.     

Structural and electrical properties of four-layers Aurivillius phase BaBi3.5Nd0.5Ti4O15 ceramics

A new compound of barium bismuth neodymium titanate BaBi_3.5Nd_0.5Ti₄O₁₅ was synthesized using the traditional solid-state reaction method. X-ray diffraction analysis confirmed the compound to be a layered tetragonal structure and Raman spectrum indicated that Nd ions occupy the A site. The plate-like morphology with average grain size about 2–4 μm was observed by a scanning electron microscope (SEM). A precision impedance analyzer was used to measure the dielectric properties and impedance spectroscopy of the ceramics. The results show that the temperature of dielectric constant maximum (T_m), the room temperature dielectric constant (ε_r) and loss (tan δ) at 100 kHz are 287° C, 326 and 0.017, respectively. The modified Curie–Weiss law was used to describe the relaxor behavior of the ceramics which was attributed to the A site cationic disorder. The remnant polarization (2P_r) of the sample was observed to be 1.27 μC/cm² at room temperature.     

Joining of Si3N4 to Si3N4 using a AuPd(Co,Ni)–V filler alloy and the interfacial reactions

Au38.0–Pd28.0–Co18.0–Ni7.0–V9.0 (in wt%) alloy was designed as a filler for joining Si₃N₄. The filler alloy showed a contact angle of 77.2° on Si₃N₄ ceramic at 1473 K. The Si₃N₄/Si₃N₄ joint brazed with the rapidly-solidified filler foils at 1443 K for 10 min exhibits an average three-point bend strength of 320.7 MPa at room temperature and the strength values are 217.9 MPa and 102.9 MPa at 1073 K and 1173 K respectively. The interfacial reaction products were composed of V₂N and Pd₂Si, and the elements Co and Ni in the brazing alloy did not participate in the interfacial reactions. The coarse-network-like distribution of refractory Pd₂Si compound within the Au–Pd–Co–Ni alloy matrix throughout the joint contributes to the stable high-temperature joint strengths.     

Effects of CaSiO3 addition on sintering behavior and microwave dielectric properties of Al2O3 ceramics

The effects of CaSiO₃ addition on the sintering behavior and microwave dielectric properties of Al₂O₃ ceramics have been investigated. The addition of CaSiO₃ into Al₂O₃ ceramics resulted in the emergence of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈, which acting as liquid sintering aids can effectively lower the sintering temperature of Al₂O₃ ceramic. The Q × f value of Al₂O₃-CaSiO₃ ceramics decreased with the CaSiO₃ addition increasing because of the lower Q × f value of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈. Compared with the pure CaSiO₃ ceramic, the Al₂O₃-CaSiO₃ ceramic with 20 wt% CaSiO₃ addition possessed good dielectric properties of ?_r = 9.36 and Q × f = 13,678 GHz at the similar sintering temperature.     

Effect of HfO2 content on the microstructure and piezoelectric properties of (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃–xHfO₂ [BNBT–xHfO₂] lead-free ceramics were prepared using the conventional solid-state reaction method. Effects of HfO₂ content on their microstructures and electrical properties were systematically studied. A pure perovskite phase was observed in all the ceramics with x=0–0.07 wt%. Adding optimum HfO₂ content can induce dense microstructures and improve their piezoelectric properties, and a high depolarization temperature was also obtained. The ceramics with x=0.03 wt% possess optimum electrical properties (i.e., d₃₃~168 pC/N, k_p~32.1%, Q_m~130, ε_r~715, tan δ~0.026, and T_d~106 °C, showing that HfO₂-modified BNBT ceramics are promising materials for piezoelectric applications.     

Microstructure and reaction phases in Si3N4/Si3N4 joint brazed with Cu–Pd–Ti filler alloy

Si₃N₄ ceramic was self-jointed using a filler alloy of Cu–Pd–Ti, and the microstructure of the joint was analyzed. By using a filler alloy of Cu76.5Pd8.5Ti15 (at.%), a high quality Si₃N₄/Si₃N₄ joint was obtained by brazing at 1100–1200 °C for 30 min under a pressure of 2 × 10⁻³ MPa. The microstructure of the Si₃N₄/Si₃N₄ joint which was observed by EPMA, XRD and TEM, and the results indicated that a reaction layer of TiN existed at the interface between Si₃N₄ ceramic and filler alloy. The center of the joint was Cu base solid solution containing Pd, and some reaction phases of TiN, PdTiSi and Pd₂Si found in the Cu [Pd] solid solution.     

In situ preparation of Si3N4–TiN composite by pyrolysis of polytitanosilazane (PTSZ)

Si₃N₄–TiN composite powders were obtained by in situ pyrolysis of polytitanosilazane. Dense Si₃N₄–TiN composites were prepared by hot-pressing at 1800 °C under 20 MPa for 2 h without sintering additive. Crystallization of amorphous PTSZ powders occurred between 1400 and 1500 °C with major phases, α-Si₃N₄, β-Si₃N₄, and small amount of phase TiN. Mechanical properties and microstructure of Si₃N₄–TiN composites were characterized. The results showed that the mechanical strength was 620 MPa, the fracture toughness was 7.8 MPa m^1/2 and the Vickers hardness was 8.5 GPa. SEM analysis indicated that Si₃N₄–TiN composite possessed excellent fracture toughness because TiN grains produced by in situ pyrolysis were well dispersed in Si₃N₄ matrix.     

Effects of Al2O3 addition on the sintering behavior and microwave dielectric properties of CaSiO3 ceramics

The effects of Al₂O₃ addition on the densification, structure and microwave dielectric properties of CaSiO₃ ceramics have been investigated. The Al₂O₃ addition results in the presence of two distinct phases, e.g. Ca₂Al₂SiO₇ and CaAl₂Si₂O₈, which can restrict the growth of CaSiO₃ grains by surrounding their boundaries and also improve the bulk density of CaSiO₃-Al₂O₃ ceramics. However, excessive addition (≥2 wt%) of Al₂O₃ undermines the microwave dielectric properties of the title ceramics since the derived phases of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈ have poor quality factor. The optimum amount of Al₂O₃ addition is found to be 1 wt%, and the derived CaSiO₃-Al₂O₃ ceramic sintered at 1250 °C presents improved microwave dielectric properties of ?_r = 6.66 and Q × f = 24,626 GHz, which is much better than those of pure CaSiO₃ ceramic sintered at 1340 °C (Q × f = 13,109 GHz).     

导电 Si3N4 基复相陶瓷研究进展

Si_3N_4陶瓷具有优异的力学性能和导热性能,然而其固有的高硬度和脆性极大地限制了其加工性能。通过添加导电相改善Si3N4陶瓷的导电性能可实现对Si_3N_4陶瓷的电火花加工。添加的导电相主要包括钛基化合物(TiN、TiC、TiC N、TiB_2)、锆基化合物(Zr B_2、Zr N)和MoSi_2等导电陶瓷以及碳纳米管(CNT)、碳纳米纤维(CNF)、石墨烯纳米片(GNP)等导电碳基纳米材料。本论文详细回顾了Si_3N_4基导电陶瓷的研究进展,并对今后Si_3N_4基导电陶瓷的发展趋势进行了展望。     

Paper derived SiC–Si3N4 ceramics for high temperature applications

Biomorphic Si₃N₄–SiC ceramics have been produced by chemical vapour infiltration and reaction technique (CVI-R) using paper preforms as template. The paper consisting mainly of cellulose fibres was first carbonized by pyrolysis in inert atmosphere to obtain carbon bio-template, which was infiltrated with methyltrichlorosilane (MTS) in excess of hydrogen depositing a silicon rich silicon carbide (Si/SiC) layer onto the carbon fibres. Finally, after thermal treatment of this Si/SiC precursor ceramic in nitrogen-containing atmosphere (N₂ or N₂/H₂), in the temperature range of 1300–1450 °C SiC–Si₃N₄ ceramics were obtained by reaction bonding silicon nitride (RBSN) process. They were mainly composed of SiC containing α-Si₃N₄ and/or β-Si₃N₄ phases depending on the nitridation conditions. The SiC–Si₃N₄ ceramics have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and Raman spectroscopy. Thermal gravimetric analysis (TGA) was applied for the determination of the residual carbon as well as for the evaluation of the oxidation behaviour of the ceramics under cyclic conditions. The bending strength of the biomorphic ceramics was related to their different microstructures depending on the nitridation conditions.     

Thermal conductivity in mullite/ZrO2 composite coatings

Mullite-based multilayered structures have been suggested as promising environmental barrier coatings for Si₃N₄ and SiC ceramics. Mullite has been used as bottom layer because its thermal expansion coefficient closely matches those of the Si-based substrates, whereas Y–ZrO₂ has been tried as top layer due to its stability in combustion environments. In addition, mullite/ZrO₂ compositions may work as middle layers to reduce the thermal expansion coefficient mismatch between the ZrO₂ and mullite layers. Present work studies the thermal behaviour of a flame sprayed mullite/ZrO₂ (75/25, v/v) composite coating. The changes in crystallinity, microstructure and thermal conductivity of free-standing coatings heat treated at two different temperatures (1000 and 1300 °C) are comparatively discussed. The as-sprayed and 1000 °C treated coatings showed an almost constant thermal conductivity (K) of 1.5 W m⁻¹ K⁻¹. The K of the 1300 °C treated specimen increased up to twice due to the extensive mullite crystallization without any cracking.     

Low temperature sintering and microwave dielectric properties of CaSiO3–Al2O3 ceramics for LTCC applications

The effects of CuO, Li₂CO₃ and CaTiO₃ additives on the densification, microstructure and microwave dielectric properties of CaSiO₃–1 wt% Al₂O₃ ceramics for low-temperature co-fired applications were investigated. With a single addition of 1 wt% Li₂CO₃, the CaSiO₃–1 wt% Al₂O₃ ceramic required a temperature of at least 975 °C to be dense enough. Large amount addition of Li₂CO₃ into the CaSiO₃–1 wt% Al₂O₃ ceramics led to the visible presence of Li₂Ca₃Si₆O₁₆ and Li₂Ca₄Si₄O₁₃ second phases. Fixing the Li₂CO₃ content at 1 wt%, a small amount of CuO addition significantly promoted the sintering process and lowered the densification temperature to 900 °C whereas its addition deteriorated the microwave dielectric properties of CaSiO₃–1 wt% Al₂O₃ ceramics. Based on 10 wt% CaTiO₃ compensation in temperature coefficient, good microwave dielectric properties of ε_r=8.92, Q×f=19,763 GHz and τ_f=−1.22 ppm/°C could be obtained for the 0.2 wt% CuO and 1.5 wt% Li₂CO₃ doped CaSiO₃–1 wt% Al₂O₃ ceramics sintered at 900 °C. The chemical compatibility of the above ceramics with silver during the cofiring process has also been investigated, and the result showed that there was no chemical reaction between silver and ceramics, indicating that the as-prepared composite ceramics were suitable for low-temperature co-fired ceramics applications.     

Calcination and sintering characteristics of limestone under O2/CO2 combustion atmosphere

The O₂/CO₂ coal combustion technology is an innovative combustion technology that can control CO₂, SO₂ and NO_x emissions simultaneously. Calcination and sintering characteristics of limestone under O₂/CO₂ atmosphere were investigated in this paper. The pore size, the specific pore volume and the specific surface area of CaO calcined were measured by N₂ adsorption method. The grain size of CaO calcined was determined by XRD analysis. The specific pore volume and the specific surface area of CaO calcined in O₂/CO₂ atmosphere are less than that of CaO calcined in air at the same temperature. And the pore diameter of CaO calcined in O₂/CO₂ atmosphere is larger than that in air. The specific pore volume and the specific surface area of CaO calcined in O₂/CO₂ atmosphere increase initially with temperature, and then decline as temperature exceeds 1000 °C. The peaks of the specific pore volume and the specific surface area appear at 1000 °C. The specific surface area decreases with increase in the grain size of CaO calcined. The correlations of the grain size with the specific surface area and the specific pore volume can be expressed as L = 744.67 + 464.64 lg(1 / S) and L = − 608.5 + 1342.42 lg(1 / ε), respectively. Sintering has influence on the pore structure of CaO calcined by means of influencing the grain size of CaO.     

Controllable synthesis of CaTi2O4(OH)2 nanoflakes by a facile template-free process and its properties

Serrated leaf-like CaTi₂O₄(OH)₂ nanoflake crystals were synthesized via a template-free and surfactant-free hydrothermal process. The samples were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The growth process for CaTi₂O₄(OH)₂ nanoflakes was dominated by a crystallization–dissolution–recrystallization growth mechanism. BET analysis showed that CaTi₂O₄(OH)₂ nanoflakes had mesoporous structure with an average pore size of 8.7 nm, and a large surface area of 88.4 m² g⁻¹. Cyclic voltammetry and galvanostatic charge–discharge tests revealed that the electrode synthesized from CaTi₂O₄(OH)₂ nanoflakes reached specific capacitances of 162 F g⁻¹ at the discharge current of 2 mA cm⁻², and also exhibited excellent electrochemical stability.     

The influence of mechanochemical activation on combustion synthesis of Si3N4

This study addresses itself in the performance of Si₃N₄ combustion synthesis, occurred in the presence of Si₃N₄ and NH₄Cl powders in N₂ atmosphere of 6 MPa. Mechanochemical activation of Si powder, achieved via high-energy attrition milling up to 24 h, increases the intensity and the efficiency of the reactions between Si and N₂ as well as combustion temperature. Benign processing conditions, anticipated with lower mechanochemical activation of Si powder, low N₂ pressures, and low combustion temperatures, favor formation of α-Si₃N₄.     

Synthesis and microstructure of (LaSr)MnO3 and (LaSr)FeO3 ceramics by a reaction-sintering process

(La_xSr_1−x)MnO₃ (LSMO) and (La_xSr_1−x)FeO₃ (LSFO) (x = 0.2–0.4) ceramics prepared by a simple and effective reaction-sintering process were investigated. Without any calcination involved, La₂O₃ and SrCO₃ were mixed with MnO₂ (LSMO) or Fe₂O₃ (LSFO) then pressed and sintered directly. LSMO and LSFO ceramics were obtained after 2 and 4 h sintering at 1350–1400 and 1200–1280 °C, respectively. Grain size decreased as La content increased in LSMO and LSFO ceramics.     

Effect of La-doping on the properties of CaCu3Ti4O12 dielectric ceramics

Nano-size Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ (χ = 0.00, 0.05, 0.10, 0.15 and 0.20) precursor powders were prepared via the sol–gel method and the citrate auto-ignition route and then processed into micro-crystal Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics under heat treatment. Characterization of the as-obtained ceramics with XRD and SEM showed an average grain sizes of ∼1–2 μm, indicating La³⁺ amount to have little impact on grain size. The room-temperature dielectric constant of the Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics sintered at 1000 °C was of the order of 10³–10⁴ despite the variation of χ values. Compared with CaCu₃Ti₄O₁₂, La³⁺-doped CaCu₃Ti₄O₁₂ showed a flatter dielectric constant curve related to frequency. It was found that the loss tangent of the Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics was less than 0.20 in ∼600–10⁵ Hz region, which rapidly decreased to a minimum value of 0.03 by La³⁺doping with χ = 0.05. Our measurement of the ceramics conductivities (σ) also indicated that the appropriate introduction of La³⁺ into CaCu₃Ti₄O₁₂ would distinctly result in its dielectric properties.