Bi0.5Na0.5 TiO3基无铅压电陶瓷应用的研究进展

随着人们环保意识的增强,作为环境友好型的无铅压电陶瓷典型代表Bi0.5Na0.5TiO3基压电陶瓷已成为压电陶瓷领域研发的热点材料之一.结合目前有关报道,着重介绍了近年来国内外该陶瓷在相关电子器件中的应用,并展望了BNT基无铅压电陶瓷应用的发展趋势.     

(Bi0.5Na0.5)1-x(BaaSrb)x TiO3无铅压电陶瓷体系的设计、制备与性能

综合考虑(Bi0.5Na0.5) TiO3(BNT)基无铅压电陶瓷的A-位、B-位原子的原子量差、离子半径差和电负性差,提出了一种BNT基无铅压电陶瓷的设计方法.依据BNT基无铅压电陶瓷所报道的相关数据,定义了ABO3型压电陶瓷的综合因子F(w)为 F(w)= M+R+100X,式中,M为A-位和B-位离子的质量差,R为A-位和B-位离子的离子半径差,X为A-位和B-位离子的电负性差.研究发现,F(w)与BNT基无铅压电陶瓷的压电耦合系数k33和kp, 以及压电常数d33有非常紧密的关系.根据该方法设计了(Bi0.5Na0.5)1-x(BaaSrb)xTiO3无铅压电陶瓷新体系,并申报了国家发明专利.研究结果表明,该体系压电陶瓷具有很好的工艺特性和压电响应,高的压电常数,其机电耦合系数kp为0.311,压电常数d33高达146pC/N,居里温度Tc为310℃,是一种很有实际应用前景的新型压电陶瓷材料体系.     

BNT基无铅压电陶瓷的研究与进展--无铅压电陶瓷20年发明专利分析之二

Bi0．5Na0．5TiO3(BNT)基无铅压电陶瓷是目前研究最广泛、最具吸引力的无铅压电陶瓷体系。本文分析了BNT基无铅压电陶瓷近20年的发明专利，着重讨论了相关体系的压电铁电性能，并展望了BNT基压电陶瓷今后的发展趋势。     

补偿电价取代对(Bi1/2Na1/2)TiO3无铅压电陶瓷介电与压电性能的影响

采用传统陶瓷制备方法,制备出一种钙钛矿结构无铅新压电陶瓷材料(1-x)(Bi1/2Na1/2)TiO3-xBi(Mg2/3 Nb1/3)O3.研究了一种化合物Bi(Mg2/3 Nb1/3)O3中两种离子Bi3 和(Mg2/3Nb1/3)3 同时进行补偿电价取代对(Bi1/2Na1/2)TiO3陶瓷介电和压电性能的影响.X射线衍射分析表明,所研究的组成均能够形成纯钙钛矿(ABO,)型固溶体.陶瓷材料的介电常数-温度曲线显示该体系材料具有明显的弛豫铁电体特征.适量的取代能提高材料的压电性能,在x=0.7%时压电常数d33=94 pC/N,x=0.9%时厚度机电耦合系数kt=0.46,为所研究组成中的最大值.该体系陶瓷具有较大的kt值和较小的kp值,具有较大的各向异性.     

Na0.5Bi0.5TiO3-BaTiO3陶瓷的介电和压电性能研究

研究了Na0.5Bi0.5TiO3和（Na0.5Bi0.5）0．94Ba0．06TiO3陶瓷的电滞回线，压电性能和热滞现象。得到（Na0.5Bi0.5）0．94Ba0．06TiO3陶瓷的剩余极化Pr=19μC/cm^2，矫顽场Ec=4.7kV/mm.发现有适量的Ba^2 取代（Na0.5Bi0.5)^2 尽管压电性能有所提高，但同时使得材料的温度稳定性大大降低。     

（Na1/2Bi1/2）TiO3无铅压电陶瓷的复合离子与补偿电价取代效应研究

采用传统陶瓷制备方法，制备出两种钙钛矿结构无铅新压电陶瓷材料（1-x）（Na1/2Bi1/2）TiO3-x（Na1/2Bi1/2）（Sb1/2Nb1/2）O3和（1-y）（Na1/2Bi1/2）TiO3-yBi（Mg2/3Nb1/3）O3。研究了复合离子与补偿电价取代对（Na1/2Bi1/2）TiO3陶瓷晶体结构和压电性能的影响。）（射线衍射分析表明，在所研究的组成范围内两种陶瓷材料均能够形成纯钙钛矿固溶体．陶瓷材料的介电常数-温度曲线显示两种陶瓷体系具有明显的弛豫铁电体特征．适量的复合离子与补偿电价取代都能提高材料的压电性能，在工=0．8％时，陶瓷的压电常数d33=97pC/N，厚度机电耦合系数kr=0．50，在y=0．7％时d33=94pC/N，y=0．9％时k1=0．46，为所研究组成中的最大值。两种陶瓷体系都具有较大的‰值和较小的kp值，具有较大的各向异性，是一种优良的、适合高频下使用的超声换能材料．     

钛酸铋钠基无铅压电陶瓷的组分设计与性能调控研究进展

钛酸铋钠(Bi0.5Na0.5TiO3,BNT)基无铅压电陶瓷是目前研究最多且极具应用前景的钙钛矿(ABO3)型无铅压电材料之一。最近几年,BNT基无铅压电陶瓷仍然是国际压电铁电材料研究的热点之一。从BNT基无铅压电陶瓷A位和/或B位取代、多组元复合、掺杂离子改性以及制备技术改进等方面,综合介绍了2006年以来国内外的研究进展,特别是准同型相界的构建以及组分设计与性能调控的研究进展,并对今后的研究进行了展望。     

（Bi0．5Na0．5）1-χ（BaaSrb）χTiO3无铅压电陶瓷体系的设计、制备与性能

综合考虑(Bi0．5Na0．5)TiO3(BNT)基无铅压电陶瓷的A-位、B-位原子的原子量差、离子半径差和电负性差，提出了一种BNT基无铅压电陶瓷的设计方法。依据BNT基无铅压电陶瓷所报道的相关数据，定义了ABO3型压电陶瓷的综合因子F(ω)为F(ω)=|M| |R| 100|χ|，式中，M为A-位和B-位离子的质量差，R为A-位和B-位离子的离子半径差，χ为A-位和B-位离子的电负性差。研究发现，F(ω)与BNT基无铅压电陶瓷的压电耦合系数κ33和kp，以及压电常数d33有非常紧密的关系。根据该方法设计了(Bi0．5Na0．5)1-χ(BaaSrb)χTiO3无铅压电陶瓷新体系，并申报了国家发明专利。研究结果表明，该体系压电陶瓷具有很好的工艺特性和压电响应，高的压电常数，其机电耦合系数kp为0．311，压电常数d33高达146pC／N，居里温度Tc为310℃，是一种很有实际应用前景的新型压电陶瓷材料体系。     

钛酸铋钠基无铅压电陶瓷研究近期进展

钛酸铋钠(分子式是Bi0.5Na0.5TiO3,简写为BNT)基无铅压电陶瓷性能优良,但与铅基陶瓷相比还有相当的差距,其性能有待进一步提高.从BNT基陶瓷改性、陶瓷新体系以及陶瓷制备技术等多方面,分析了提高BNT基陶瓷性能的原理、途径和方法,指出了发明陶瓷新体系的有关思路,讨论了陶瓷制备技术与陶瓷性能的关系.同时,列举了近期在BNT基陶瓷性能改善研究中的若干新进展和新结果、性能良好的BNT基陶瓷新体系及制备工艺和制备新技术对陶瓷性能的影响,并对今后的相关研究进行了展望.     

(Bi0.5Na0.5)TiO3(BNT)基无铅压电陶瓷研究进展

(Bi0.5Na0.5)TiO3(BNT)基无铅压电陶瓷体系是目前研究最广泛的功能陶瓷材料之一.综述了BNT基无铅压电陶瓷的研究现状,讨论了相关体系的设计方法、铁电性、压电性以及BNT体系的制备方法.分析比较了BNT系压电陶瓷与Pb(Zr,Ti)O3(PZT)压电陶瓷的性能差异以及存在的问题,对BNT基无铅压电陶瓷进行了展望.     

(Na0.5Bi0.5)TiO3基无铅压电陶瓷研究进展

综述了（Na0.5Bi0.5)Tio3（简写为NBT）基无铅压电陶瓷的发展现状，特性及影响因素，用分子轨道理论解释了NBT强铁电性的成因，对研究较多的三个体系：NBT-ATiO3(A=Ca,Sr,Ba),NBT-BNbO3(B=Na,K)和NBT－Ln掺杂体系给予了概括介绍，内容包括成分配比，性能和应用，并提出了NBT基无铅压电陶瓷的设计原则。     

Piezoelectric properties in (K0.5Bi0.5)TiO3-(Na0.5Bi0.5)TiO3-BaTiO3 lead-free ceramics.

Lead-free piezoelectric ceramics with compositions around the morphotropic phase boundary (MPB) x(Na0.5Bi0.5)TiO3-y(K0.5Bi0.5)TiO3-zBaTiO3 [x + y + z = 1; y:z = 2:1] were synthesized using conventional, solid-state processing. Dielectric maximum temperatures of 280 degrees C and 262 degrees C were found for tetragonal 0.79(Na0.5Bi0.5)TiO3-0.14(K0.5Bi0.5)TiO3-0.07BaTiO3 (BNBK79) and MPB composition 0.88(Na0.5Bi0.5)TiO3-0.08(K0.5Bi0.5)TiO3-0.04BaTiO3 (BNBK88), with depolarization temperatures of 224 degrees C and 162 degrees C, respectively. Piezoelectric coefficients d33 were found to be 135 pC/N and 170 pC/N for BNBK79 and BNBK88, and the piezoelectric d31 was determined to be -37 pC/N and -51 pC/N, demonstrating strong anisotropy. Coercive field values were found to be 37 kV/cm and 29 kV/cm for BNBK79 and BNBK88, respectively. The remanent polarization of BNBK88 (approximately 40 microC/cm2) was larger than that of BNBK79 (approximately 29 microC/cm2). The piezoelectric, electromechanical, and high-field strain behaviors also were studied as a function of temperature and discussed.     

La2O3、Y2O3掺杂对(Na0.5Bi0.5)0.94Ba0.06TiO3无铅压电陶瓷性能的影响

以(Na0.5Bi0.5)0.94Ba0.06TiO3为基体,研究了单、双组分掺杂La2O3、Y2O3对BNBT6陶瓷的压电和介电性能及微观结构的影响。XRD分析表明:掺杂La2O3、Y2O3均得到钙钛矿结构。SEM分析表明,分别掺杂0.2%La2O3和0.2%Y2O3使得陶瓷晶粒增大,压电常数提高,双组分掺杂La2O3、Y2O3在掺杂量0.12%La2O3+0.08%Y2O3时,压电常数d33增大到最大值144.6×10-12C/N,介质损耗降低到最小值0.039。     

(Bi0.5Na0.5)TiO3系无铅压电陶瓷研究现状与展望

BNT陶瓷由于具有良好的压电性、高居里温度和烧结过程中无毒、易控制性等优点而倍受青睐.本文介绍了无铅压电陶瓷的研究概况、相变过程及其基本性质、制备工艺,根据已有的研究经验着重对BNT陶瓷掺杂改性进行了探讨,并展望了它的发展前景.     

(NaBi)0.5TiO3基无铅压电陶瓷研究进展

综述了钙钛矿结构（NaBi）0.5TiO3基无铅压电陶瓷的研究现状.评价了（NaBi）0.5TiO3基无铅压电陶瓷的三种改性方法：氧化物掺杂改性、固溶体改性和工艺改性.研究表明：几种方法复合改性效果更佳,无铅压电织构陶瓷压电性能远远优于传统工艺制备的无铅压电陶瓷.     

Piezoelectric Properties of （Na0.5K0.5-xLix）NbO3 Ceramics

Lead-free piezoelectric ceramics （Na0.5K0.5-xLix）NbO3 （x=0.057-0.066） were synthesized by an ordinary sin-tering technique. Substituting Li for K can lead to structural distortion, which improves the Curie temperature （To） greatly. By adding appropriate LiNbO3 content, piezoelectric constant d33 values reach 202-212 pC/N. Electromechanical coefficients of the planar mode reach 44.4%-46.8%. The dielectric loss is below 2.6%, which is much lower than reported （about 50%）. The To of （Na0.5K0.5-xLix）NbO3 （x=0.057-0.066） is in the range of 490-510℃, at least 70℃ higher than that of pure （Na0.5K0.5）NbO3 ceramics. The results show that （Na0.5K0.5-xLix）NbO3 ceramic is a kind of good lead-free high-temperature piezoelectric material.     

Fabrication and evaluation of a single-element Bi(0.5)Na(0.5)TiO(3)-based ultrasonic transducer

This paper discusses the fabrication and characterization of a single-element ultrasonic transducer with a lead-free piezoelectric active element. A piezoelectric ceramic with composition of 0.88Bi(0.5)Na(0.5)TiO(3)-0.08Bi(0.5)K(0.5)TiO(3)- 0.04Bi(0.5)Li(0.5)TiO(3) was chosen as the active element of the transducer. This composition exhibited a thickness coupling coefficient (kt) of 0.45, a dielectric constant of 440 (at 1 kHz), and a longitudinal piezoelectric coefficient (d(33)) of 84 pC?N(-1). To make the transducer, the ceramic was sandwiched between an epoxy-tungsten backing layer and a silver epoxy matching layer. An epoxy lens was also incorporated into the transducer?s design to focus the ultrasound beam. The focused transducer with a center frequency of about 23 MHz demonstrated a -6-dB bandwidth of 55% and an insertion loss of -32 dB; the -20-dB pulsed length was measured to be 150 ns. A phantom made of copper wires (30 μm in diameter) was utilized to investigate the imaging capability of the transducer. The results indicated that the fabricated transducer, with a lateral resolution of 260 μm and a relatively high depolarization temperature, could be considered as a candidate for replacement of lead-based ultrasonic transducers.     

Gd2O3 doped 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3 lead-free piezoelectric ceramics

Gd₂O₃ (0–0.8 wt.%)-doped 0.82Bi_0.5Na_0.5TiO₃–0.18Bi_0.5K_0.5TiO₃ (BNKT18) lead-free piezoelectric ceramics were synthesized by a conventional solid-state process. The effects of Gd₂O₃ on the microstructure, the dielectric, ferroelectric and piezoelectric properties were investigated. X-ray diffraction (XRD) data shows that Gd₂O₃ in an amount of 0.2–0.8 wt.% can diffuse into the lattice of BNKT18 ceramics and form a pure perovskite phase. Scanning electron microscope (SEM) images indicate that the grain size of BNKT18 ceramics decreases with the increase of Gd₂O₃ content; in addition, all the modified ceramics have a clear grain boundary and a uniformly distributed grain size. At room temperature, the ferroelectric and piezoelectric properties of the BNKT18 ceramics have been improved with the addition of Gd₂O₃, and the BNKT18 ceramics doped with 0.4 wt.% Gd₂O₃ have the highest piezoelectric constant (d₃₃ = 137 pC/N), highest relative dielectric constant (ε_r = 1023) and lower dissipation factor (tan δ = 0.044) at a frequency of 10 kHz. The BNKT18 ceramics doped with 0.2 wt.% Gd₂O₃ have the highest planar coupling factor (k_p = 0.2463).