A simple method to determine carrier recombinations in asemiconductor laser optical amplifier

The contribution of nonradiative carrier recombinations to the characteristics of long-wavelength InGaAsP/InP semiconductor laser devices is verified by measuring the amplified spontaneous emission (ASE) power from a 1.5-μm semiconductor laser amplifier (SLA) against the bias current. This method provides a simple and straightforward way to determine the mathematical form of recombination rate in a long-wavelength semiconductor laser, provided that the structural parameters of the laser are known     

Optical demultiplexing at 6 Gb/s using a semiconductor laser amplifier as an optical gate

A semiconductor laser amplifier (SLA) has been employed successfully for optical demultiplexing in two-channel optical time division multiplexed system experiments at 6 and 2 Gb/s. Demultiplexing of 6-Gb/s (2-Gb/s) signals was demonstrated with a power penalty of 1.6 dB (3.0 dB) at bit error rates of 10/sup -9/. It is also shown that a reduction of the generated amplified spontaneous emission can be obtained by optical gating/demultiplexing for systems incorporating inline amplifiers. A 0.5-dB improvement in sensitivity was achieved as a result of using an SLA for demultiplexing from 2.0 to 1.0 Gb/s in a system with one inline Er/sup 3+/-doped fiber amplifier.<>     

New unipolar codes allowing electrooptical correlation utilizing a semiconductor laser amplifier

This letter reports on the development of a new code allowing the use of a semiconductor laser amplifier (SLA) to execute correlation in the optical domain. Semiconductor laser amplifiers act as AND gates and can only correlate codes in the unipolar domain and therefore have been limited by the lack of unipolar codes with good autocorrelation properties. The authors propose a new unipolar code derived from bipolar Golay codes which has a high probe duty cycle (50%) and is ideal for use with an SLA based correlator. Computer modeling of an SLA correlator used to interrogate a sensor network is described, indicating crosstalk levels of less than 0.7%.     

SLA端面增透膜设计的理论分析与计算

文章推导了多层平板波导结构的半导体激光放大器 (SLA)端面反射率的计算方法 ,为优化设计SLA端面增透膜参数提供了工具。对InGaAs/InGaAlAs多量子阱SLA端面增透膜参数进行了优化设计 ,并给出优化结果。     

Optical sampling using nondegenerate four-wave mixing in asemiconductor laser amplifier

Picosecond optical sampling using nondegenerate four-wave mixing in a semiconductor laser amplifier (SLA) is demonstrated for the first time. High-peak-power pulses and electrical gating of the SLA produce an optical sampling signal with a high signal-to-noise ratio     

Impact of gain saturation on size limitations of semiconductorlaser amplifier (SLA) based switching structures

Size limitations of optical switching structures employing semiconductor laser amplifiers arising from signal extinction ratio, amplifier gain, and optical filter bandwidth are investigated theoretically and experimentally. Simulations reveal that the maximum number of SLA that can be cascaded in an optical switching structure increases with increasing input signal extinction ratio, optical gain of each SLA and decreases with increasing SLA noise figure, optical filter bandwidth and input signal bit rate     

Recovery of a π phase shift in ~12.5 ps in a semiconductor laseramplifier

Time-resolved interferometry is used to measure the relaxation of an optically induced phase change in a semiconductor laser amplifier (SLA). A phase change of π recovers in ~12.5 ps. This is proof-of-principle that an interferometric switch using an SLA can be gated at ~80 GHz     

Impact of crosstalk induced beat noise on the size of semiconductor laser amplifier based optical space switch structures

The size limitation of a semiconductor laser amplifier (SLA) based optical matrix-vector multiplier (MVM) switch structure arising from amplifier noise and crosstalk is investigated theoretically and experimentally. Computer simulation reveals that the number of input/output channels in such a switch structure may be limited to less than 60/spl times/60 if the contrast ratio of each SLA is 20 dB or lower.     

Cumulative waveform distortion in cascaded optical amplifierrepeaters for multigigabit IM/DD systems

An analysis was conducted of a cumulative pattern-dependent waveform distortion in cascaded semiconductor laser and Er³⁺-doped fiber amplifiers. At 2.5 Gb/s, cumulative waveform distortion limits the number of cascaded amplifiers to about 20 for the semiconductor amplifiers. The Er³⁺-doped fiber amplifier is relatively unaffected-over 100 stages can be cascaded. The Er³⁺ amplifier is seen to be the better choice for long-haul multigigabit systems     

Optical loop mirror with semiconductor laser amplifier

A nonlinear optical loop mirror is reported, employing a semiconductor laser amplifier (SLA). The input-output characteristic is distinctly nonlinear, and when operating as an optical correlator, an extinction ratio of 13 dB was achieved.<>     

The suppression of optical regenerator employing semiconductor laser amplifier loop mirror on the additive noise

In this paper, transmission properties of the regenerator employing a semiconductor laser amplifier loop mirror (SLALOM) are discussed. The ability of the regenerator to suppress the additive noise in the input data train is calculated. It’s shown that the regenerator can greatly suppress noise in communication system and improve their communication capacity by choosing suitable semiconductor laser amplifier(SLA) and the power of injected continuous wave.     

Performance analysis on semiconductor laser amplifier loop mirrors

Operating characteristics of the semiconductor laser amplifier loop mirror (SLALOM) in optical time-division multiplexing (OTDM) applications are investigated in theory. The injection current of the semiconductor laser amplifier (SLA) should be adjusted to realize a flat and high switching window. The channel crosstalk induced by the finite carrier lifetime and the signal timing jitter should be balanced. The optimal switching window width should be slightly wider than half of the OTDM signal bit interval. The control pulse should be narrower than one-third of the OTDM bit interval in order not to deteriorate the bit error rate (BER) performance. Further discussion indicates that the nonlinear gain compression in the SLA becomes a crucial limit for the SLA-based all-optical switches to be used in the terahertz applications     

Long-haul high-speed optical communication systems using asemiconductor laser amplifier

High-speed long-haul systems using semiconductor laser amplifiers, which eliminate the need for high-speed electronics in repeaters and are transparent to the transmission speed are considered for application in undersea high-speed transmission systems. The potential of laser-amplifier-repeated transmission systems has been explored by transmission experiments, showing that a high-speed system above 2 Gb is possible by filtering out the spontaneous emission power of the laser amplifier. A theoretical estimation of SNR degradation due to noise accumulation of chained laser amplifiers shows that systems are possible, using 30 to 40 laser amplifier repeaters, if narrow-bandwidth optical filters are used     

Chirp reduction of directly modulated semiconductor lasers at 10Gb/s by strong CW light injection

The influence of strong light injection on the reduction of the dynamical linewidth broadening of directly current-modulated semiconductor lasers at high bit rates is theoretically investigated and experimentally verified for 10 Gb/s NRZ pseudorandom modulation with a large current swing of 40 mA pp. Significant chirp reduction and single-mode operation are observed for bulk DFB, quantum well DFB lasers at 10 Gb/s and a weakly coupled bulk DFB laser at 8 Gb/s, so that an improvement of the transmission performance using standard monomode fibers in the 1.55 μm low-loss wavelength region can be achieved for all these laser types, where dispersion otherwise causes severe penalties for long-haul transmission. The properties of injection-locked bulk DFB and quantum well DFB lasers with respect to high bit rate modulation have been systematically studied by the use of the rate equation formalism. A dynamically stable locking range of more than 30 GHz under modulation has been found for both laser types with injection ratios higher than 0.5     

Equivalent circuit theory of spontaneous emission power insemiconductor laser optical amplifiers

An equivalent circuit model for a semiconductor laser amplifier (SLA) has been developed. This model can be used with a transfer matrix method (TMM) to analyze the performance of a SLA. The validity of the model is explored in this paper by analyzing the spontaneous emission noise power in a Fabry-Perot SLA with a uniform distribution of material gain coefficient. The result is found to be identical with that derived by the Green function approach. The physical reasons for the validity of the equivalent circuit model are also discussed, and possible further applications of the model are suggested     

GaInAsP/InP semiconductor vertical GRIN-lens for semiconductoroptical devices

A GaInAsP/InP vertical GRIN-lens (VGL), which is suitable for monolithic integration with semiconductor laser diodes (LDs) or semiconductor laser amplifiers (SLAs), was fabricated for the first time. A narrow FWHM of vertical far-field pattern of 6 degree was experimentally obtained with 8 layers of GRIN core region (8 μm thick) and InP cladding layers. An integration of this VGL with a taper waveguide SLA with the output width of 10 μm was also demonstrated     

Fiber loop optical buffer

Fiber loop optical buffers enable data storage for discrete time intervals and therefore appear suitable for applications in optical asynchronous transfer mode (OATM)-based networks where data are transmitted in cells of fixed length. In this paper, the feasibility and the limitations of optical data storage in a fiber loop optical buffer are studied theoretically and experimentally, A model of a fiber loop buffer, incorporating semiconductor laser amplifiers (SLA) as switching gates, is described. The two major interfering quantities are cross talk and amplified spontaneous emission of the SLA gates. To limit the impact of cross talk on the signal quality, an on/off ratio of the SLA gates of at least 30 dB is required. The paper describes the optimum operation conditions, which enable data storage for more than 100 circulations even for data rates in the range from 10 to 160 Gb/s     

基于三波长SLA的全光解复用器

工作在三波长状态下的SLA作为非线性元件,在光环形镜中实现OTDM信号的解复用,模拟计算表明,在保持光束功率为1W时,SLA恢复时间小于10ps,可从OTDM复用信号中提取出任一路信号,在控制脉冲功率为900mW时,带宽可达100GHz。     

Influence of carrier transport on performance of SLALOM with apolarization-independent MQW SLA

The switching performance of the semiconductor laser amplifier in a loop mirror (SLALOM) with a polarization-independent multiquantum-well SLA influenced by the carrier transport is discussed. It is shown that the switching window is polarization-dependent in the case of ultra-short pulses used as switching pulses because of the carrier transport effect between quantum wells. The influence of polarization can be suppressed by modifying the polarization state of local switching pulses     

用于光纤传输系统的半导体激光放大器

本文主要介绍用于光纤传输系统的行波半导体激光放大器(TWSLA)。首先描述 TWSLA 的激光器刻面抗反射(AR)涂层的特性,然后描述半导体激光放大器(SLA)的重要特性,如小信号增益、信号增益饱和及噪声特性,最后讨论了 TWSLA 的结构设计。