压力传感器测试过程可靠性分析

根据压力传感器的实际测试过程中的各个环节已经或可能产生的影响,获取压力传感器真实性能输出数据的因素,采用可靠性的分析方法对其进行分析;提示了测试过程中影响传感器输出的规律,减小传感器因在测试过程中产生的误差;并为深入研究压力传感器提供一条新的思路,为研究新的压力传感器提供一定的理论依据。     

压力传感器测试过程可靠性分析

根据压力传感器的实际测试过程中的各个环节已经或可能产生的影响,获取压力传感器真实性能输出数据的因素,采用可靠性的分析方法对其进行分析;提示了测试过程中影响传感器输出的规律,减小传感器因在测试过程中产生的误差;并为深入研究压力传感器提供一条新的思路,为研究新的压力传感器提供一定的理论依据.     

MEMS机油压力传感器可靠性研究

研究了封装工艺对传感器可靠性的影响。分析和实验结果表明，机油压力传感器封装材料及各个工艺步骤都会影响传感器的性能和可靠性。贴片胶性能不能满足可靠性要求，会引起传感器信号漂移和高温不稳定性；引线键合强度不够，在工作中会断裂；硅油化学稳定和耐温性能不够好，会造成传感器高温输出信号不稳定，硅油中的空气和杂质会造成传感器零点输出偏大，使传感器的精度下降等。     

热激励硅谐振梁压力传感器开环测试系统设计

设计了一个开环测试系统,利用锁相放大器能够对微弱信号进行有效检测的特点,采用交流激励、二倍频拾振的方法,实现了对热激励硅谐振梁压力传感器谐振输出的微弱信号的检测。该测试系统能够快速测得传感器的幅频特性曲线;通过处理,得到传感器的压力-频率特性。整个测试过程由程序控制实现。     

半导体压力传感器与微机的相接

大部分流行的硅压力传感器都是压阻桥，根据加到薄硅膜片上的压力产生一个差分输出电压。这些传感器的输出电压一般是满度２５～５０ｍＶ。因此，连接到微机一般涉及到放大较小的输出电压，完成差分到单端的变换，并把模拟信号换算成适合模／数转换的量程。另外，模拟压力...     

采用半导体压力传感器的简单压力调节器

半导体压力传感器在压力探测应用方面提供一种实现高可靠性和高性能的经济方法。完全集成的ＭＰＸ５１００（０～１５ＰＳＩ）系列压力传感器提供经过温度补偿和校准的高度线性输出，这种输出适合于与很多线性控制系统直接相接。本文所描述的电路说明这种传感器如何与简单...     

光电传感器中发射器与接收器的匹配

光电传感器的输出电流是光电传感器十分关键的一个性能参数。光电传感器的输出电流不仅与发射器辐射强度和接收器集电极电流的大小、发射器与接收器之间的距离或角度、发射器与接收器前槽孔的大小等设计参数有关,还与元件及外壳的制造工艺控制、装配过程的工艺控制、测试过程等有关。在分析设计与制造过程中影响光电传感器输出电流因素的基础上,提出了包括合理确定发射器和接收器的辐射强度与集电极电流、加强生产与制造过程工艺控制、分等级匹配等提高产品良品率的措施。     

压阻式压力传感器零点输出及其温漂研究

零点输出及零点温漂是传感器制造中的重要指标。结合设计制作的压阻式压力传感器重点分析了零点输出的产生机理，并对其接头和布线失配、复合层结构造成的应力分布、光刻随机误差造成的电阻失配及其他效应进行了量的分析。同时分析了它们对零点温漂的影响。最后，给出了一种整体设计流程来控制零点输出与提高成品率。     

相变式自检测压力传感器

提出一种新型压力传感器自检测方法--相变热驱动法.在压力传感器的密封腔中填充相变物质,利用相变物质气化后所产生的巨大压力实现自检测功能.通过控制压力腔中相变物质的填充量与加热电阻的加热功率,可以实现不同量程压力传感器的自检测.基于相变热驱动法研制了一种单晶硅大量程自检测压力传感器,传感器为硅-玻璃-硅三层结构,通过静电键合与热键合技术制备.测试结果显示,自检测电压输出为满量程输出的6.8%,综合精度高于2.1‰.     

相变式自检测压力传感器

提出一种新型压力传感器自检测方法--相变热驱动法.在压力传感器的密封腔中填充相变物质,利用相变物质气化后所产生的巨大压力实现自检测功能.通过控制压力腔中相变物质的填充量与加热电阻的加热功率,可以实现不同量程压力传感器的自检测.基于相变热驱动法研制了一种单晶硅大量程自检测压力传感器,传感器为硅-玻璃-硅三层结构,通过静电键合与热键合技术制备.测试结果显示,自检测电压输出为满量程输出的6.8%,综合精度高于2.1‰.     

A novel semiconductor capacitive sensor for a single-chipfingerprint sensor/identifier LSI

We describe a new semiconductor capacitive sensor structure and the fabrication process for a single-chip fingerprint sensor/identifier LSI in which the sensor is stacked on a 0.5-μm CMOS LSI. To ascertain the influence of the fabrication process and normal usage on the underlying LSI, sensor chips were subjected to an electrostatic discharge (ESD) test, mechanical stress test, and unsaturated pressure cooker test (USPCT). ESD tolerance is obtained at the value of ±3.0 kV. To investigate mechanical stress, we carried out a tapping test. The sensor is immune to mechanical stress under the condition of 10⁴ taps with the strength of 1 MPa. A multilayer passivation film consisting SiN under polyimide film provides protection against contamination such as water. Thus, under USPCT conditions of 130°C, 80% humidity, and 48 h, the chips were not degraded. The tests confirm that the proposed sensor has sufficient reliability for normal identification usage     

一种基于谐振原理的微型压力传感器设计

设计了一种结构简单的微型石英谐振式压力传感器,该传感器芯片由力学转换元件、谐振敏感元件和支撑元件3部分构成。仿真分析了压力100kPa内传感器输出频率与输入压力的关系,经线性拟合后得出其最大相对非线性误差为0.09%。采用石英深槽湿法腐蚀的方法加工出了芯片3个元件结构,并经镀膜及键合等后工序制作出了传感器芯片,其性能实测值与仿真结果基本吻合,验证了结构及工艺方案的可行性。     

热激励硅基谐振型压力传感器技术研究

提出一种以电阻发热实现梁激励的单梁硅基谐振型压力传感器结构。利用硅/硅键合、减薄抛光和IC工艺技术,开展硅基谐振型压力传感器技术的研究,解决了三维体加工与IC工艺兼容的关键技术问题,成功地研制出热激励硅基谐振型压力传感器样品。该器件在常压下测试,其品质因子Q值达到1362.5,证实了该谐振型压力传感器结构是可行的。这为研制硅基谐振型压力传感器提供了一种新的方法。     

Finite element simulation of package stress in transfer molded MEMS pressure sensors

The goal of this paper is to investigate the effect of residual packaging stress resulting from transfer molding of a micro electro mechanical system pressure sensor. A model of a silicon diaphragm micro electro mechanical system pressure sensor geometry was used to simulate the stresses developed during the molding process. The analyses were carried out with an assumption that the epoxy molding compound was a temperature dependent elastic material. Finite element analysis was used to calculate the residual packaging stress. The stress values were used to obtain the electrical output signal and sensitivity of the packaged sensor. In this way, a direct link was established between package stress and device performance.The calculated output signal and sensitivity were compared with experimental data to verify the simulated stress and hence determine the effect of the packaging process on the pressure sensor. Four different service temperatures were considered to examine the temperature effects on the output signal and the sensitivity for the packaged sensor.     

单片集成CMOS电阻真空传感器

设计了一种工作在恒电压模式的、微热板结构的单片集成电阻真空传感器芯片.提出了一种以CMOS集成电路中的介质层与钝化层为结构层、栅多晶硅为牺牲层、第二层多晶硅为加热电阻的微传感器单芯片集成工艺模式,制定了相应的工艺流程.采用0.6μm CMOS数模混合集成电路工艺,结合牺牲层腐蚀技术实现了单片集成真空传感器的加工,测试结果显示该芯片能够测量2～105Pa范围内的气压大小,且输出电压范围可调,验证了单片集成工艺的可行性.     

A Fully Differential Rail-to-Rail CMOS Capacitance Sensor With Floating-Gate Trimming for Mismatch Compensation

This paper presents a fully differential capacitance sensor employing the CBCM technique to map differential input capacitances into rail-to-rail differential output voltages. The circuit has been designed for measuring capacitances in the $pm hbox{25-fF}$ range, appropriate for sensing live cells using on-chip microelectrodes. An array architecture based on a shielded current routing bus has been developed for incorporating the capacitance measurement circuit into sensor arrays, with each pixel comprising four minimum-size digital transistors, enabling high-density integration. In addition to improving spatial resolution, the shielded current bus also eliminates the need for individual pixel calibration, conserves sensor evaluation speed, and provides protection from junction leakage. The sensor employs a 3-phase clocking scheme that enables on-chip gain tuning. The paper also presents a modified version of the sensor circuit incorporating floating-gate transistors for mismatch compensation and output offset cancellation, performed using a combination of impact-ionized channel hot electron injection and Fowler–Nordheim tunneling mechanisms. Chips comprising both versions of the sensor circuits in test arrays employing the shielded current routing bus were fabricated in a commercially available 2-poly, 3-metal, 0.5-$mu{hbox {m}}$ CMOS process. The sensor operation was demonstrated by measuring on-chip test capacitances comprising single and interdigitated metal electrodes, configured using different capacitance compensation schemes. The differential sensor in combination with the shielded current bus exhibits a maximum sensitivity of 200 mV/fF, a resolution of 15 aF, and an output dynamic range of 65 dB.      

静压桩贯入试验增敏型FBG传感器的研制及应用

介绍了光纤光栅的基本原理及优点,设计了基于光纤光栅技术的增敏型应变传感器,并对其工作特性进行了分析。应用增敏型光纤光栅传感器,测试了静压桩贯入过程中模型桩的桩身应力变化。试验结果表明,使用光纤光栅传感器对模型试验中静压桩贯入过程桩身应力监测时需进行增敏。增敏型光纤光栅传感器为模型试验中静压桩贯入过程监测及分析提供了一种新的工具,是监测模型桩静压贯入过程的理想器件。     

A CMOS Image Sensor With In-Pixel Buried-Channel Source Follower and Optimized Row Selector

This paper presents a CMOS imager sensor with pinned-photodiode 4T active pixels which use in-pixel buried-channel source followers (SFs) and optimized row selectors. The test sensor has been fabricated in a 0.18-mum CMOS process. The sensor characterization was carried out successfully, and the results show that, compared with a regular imager with the standard nMOS transistor surface-mode SF, the new pixel structure reduces dark random noise by 50% and improves the output swing by almost 100% without any conflicts to the signal readout operation of the pixels. Furthermore, the new pixel structure is able to drastically minimize in-pixel random-telegraph-signal noise.     

基于Visual C++的传感器稳定性测试系统设计与实现

本文基于传感器稳定性测试中存在的一些效率低等问题,开发并设计出一套Visual C++的系统.在计算机的主控器上指令编程IO数字量输出卡,完成对G5V-2继电器开关的控制切换.该系统具有网络通讯集成功能,通过TCP/IP协议,能在局域网内实时监视传感器稳定性测试,并且还能远程控制压力控制器以及调温箱,通过模拟工业现场特定环境中的压力以及温度条件等测试传感器的稳定性.