An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells

In this study, we investigate the effect of annealing and nitrogen amount on electronic transport properties in n- and p-type-doped Ga_0.68In_0.32N_yAs_{1 − y}/GaAs quantum well (QW) structures with y = 0%, 0.9%, 1.2%, 1.7%. The samples are thermal annealed at 700°C for 60 and 600 s, and Hall effect measurements have been performed between 10 and 300 K. Drastic decrease is observed in the electron mobility of n-type N-containing samples due to the possible N-induced scattering mechanisms and increasing effect mass of the alloy. The temperature dependence of electron mobility has an almost temperature insensitive characteristic, whereas for p-type samples hole mobility is decreased drastically at T > 120 K. As N concentration is increased, the hole mobility also increased as a reason of decreasing lattice mismatch. Screening effect of N-related alloy scattering over phonon scattering in n-type samples may be the reason of the temperature-insensitive electron mobility. At low temperature regime, hole mobility is higher than electron mobility by a factor of 3 to 4. However, at high temperatures (T > 120 K), the mobility of p-type samples is restricted by the scattering of the optical phonons. Because the valance band discontinuity is smaller compared to the conduction band, thermionic transport of holes from QW to the barrier material, GaAs, also contributes to the mobility at high temperatures that results in a decrease in mobility. The hole mobility results of as-grown samples do not show a systematic behavior, while annealed samples do, depending on N concentration. Thermal annealing does not show a significant improvement of electron mobility.     

Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1?x In x N y As1?y /GaAs quantum well p-i-n photodiodes

Photocurrent oscillations, observed at low temperatures in lattice-matched Ga_1−x In _x N _y As_1−y /GaAs multiple quantum well (MQW) p-i-n samples, are investigated as a function of applied bias and excitation wavelength and are modelled with the aid of semiconductor simulation software. The oscillations appear only at low temperatures and have the highest amplitude when the optical excitation energy is in resonance with the GaInNAs bandgap. They are explained in terms of electron accumulation and the formation of high-field domains in the GaInNAs QWs as a result of the disparity between the photoexcited electron and hole escape rates from the QWs. The application of the external bias results in the motion of the high-field domain towards the anode where the excess charge dissipates from the well adjacent to anode via tunnelling.     

Novel photoinduced phase transitions in transition metal oxides and diluted magnetic semiconductors

Some transition metal oxides have frustrated electronic states under multiphase competition due to strongly correlated d electrons with spin, charge, and orbital degrees of freedom and exhibit drastic responses to external stimuli such as optical excitation. Here, we present photoemission studies on Pr_0.55(Ca_1 − ySr_y)_0.45MnO₃ (y = 0.25), SrTiO₃, and Ti_1 − xCo_xO₂ (x = 0.05, 0.10) under laser illumination and discuss electronic structural changes induced by optical excitation in these strongly correlated oxides. We discuss the novel photoinduced phase transitions in these transition metal oxides and diluted magnetic semiconductors on the basis of polaronic pictures such as orbital, ferromagnetic, and ferroelectric polarons.     

Acceptor formation in Mg-doped,indium-rich GaxIn1?xN: evidence for p-type conductivity

We report on the Mg-doped, indium-rich Ga_xIn_1−xN (x < 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of temperatures of 30 <T < 300 K. In the Mg-doped material however, where the conductivity is reduced, there is a strong PC spectrum with two prominent low-energy peaks at 0.65 and 1.0 eV and one broad high-energy peak at around 1.35 eV. The temperature dependence of the spectral photoconductivity under constant illumination intensity, at T > 150 K, is determined by the longitudinal-optical phonon scattering together with the thermal regeneration of non-equilibrium minority carriers from traps with an average depth of 103 ± 15 meV. This value is close to the Mg binding energy in GaInN. The complementary measurements of transient photoluminescence at liquid He temperatures give the e-A⁰ binding energy of approximately 100 meV. Furthermore, Hall measurements in the Mg-doped material also indicate an activated behaviour with an acceptor binding energy of 108 ± 20 meV.     

Effects of an intense,high-frequency laser field on bound states in Ga1 ? xInxNyAs1 ? y/GaAs double quantum well

Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga_xIn_{1 − x}N_yAs_{1 − y}/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga_{1 − x}In_xN_yAs_{1 − y}/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.     

The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1?xInxNyAs1?y/GaAs quantum well

Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga_1−xIn_xN_yAs_1−y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.     

Scandium effect on the luminescence of Er-Sc silicates prepared from multi-nanolayer films

Polycrystalline Er-Sc silicates (Er _x Sc_2-x Si₂O₇ and Er _x Sc_2-x SiO₅) were fabricated using multilayer nanostructured films of Er₂O₃/SiO₂/Sc₂O₃ deposited on SiO₂/Si substrates by RF sputtering and thermal annealing at high temperature. The films were characterized by synchrotron radiation grazing incidence X-ray diffraction, cross-sectional transmission electron microscopy, energy-dispersive X-ray spectroscopy, and micro-photoluminescence measurements. The Er-Sc silicate phase Er _x Sc_2-x Si₂O₇ is the dominant film, and Er and Sc are homogeneously distributed after thermal treatment because of the excess of oxygen from SiO₂ interlayers. The Er concentration of 6.7 × 10²¹ atoms/cm³ was achieved due to the presence of Sc that dilutes the Er concentration and generates concentration quenching. During silicate formation, the erbium diffusion coefficient in the silicate phase is estimated to be 1 × 10^-15 cm²/s at 1,250°C. The dominant Er _x Sc_{2 - x} Si₂O₇ layer shows a room-temperature photoluminescence peak at 1,537 nm with the full width at half maximum (FWHM) of 1.6 nm. The peak emission shift compared to that of the Y-Er silicate (where Y and Er have almost the same ionic radii) and the narrow FWHM are due to the small ionic radii of Sc³⁺ which enhance the crystal field strength affecting the optical properties of Er³⁺ ions located at the well-defined lattice sites of the Sc silicate. The Er-Sc silicate with narrow FWHM opens a promising way to prepare photonic crystal light-emitting devices.     

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10⁵ cycles, and good data retention of >10⁴ s with a good resistance ratio of >10² at 85°C are obtained using a Ti nanolayer to form a W/TiO_x/TaO_x/W structure under a low current operation of 80 μA, while few switching cycles are observed for W/TaO_x/W structure under a higher current compliance >300 μA. The low resistance state decreases with increasing current compliances from 10 to 100 μA, and the device could be operated at a low RESET current of 23 μA. A small device size of 150 × 150 nm² is observed by transmission electron microscopy. The presence of oxygen-deficient TaO_x nanofilament in a W/TiO_x/TaO_x/W structure after switching is investigated by Auger electron spectroscopy. Oxygen ion (negative charge) migration is found to lead to filament formation/rupture, and it is controlled by Ti nanolayer at the W/TaO_x interface. Conducting nanofilament diameter is estimated to be 3 nm by a new method, indicating a high memory density of approximately equal to 100 Tbit/in.².     

Ferromagnetism and optical properties of La1???x Al x FeO3 nanopowders

La_{1 − x} Al _x FeO₃ (x = 0.0, 0.05, 0.1, 0.2, 0.3, 0.4, and 0.5) nanopowders were prepared by polymerization complex method. All prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR), and UV-vis spectrophotometry (UV-vis). The magnetic properties were investigated using a vibrating sample magnetometer (VSM). The X-ray results of all samples show the formation of an orthorhombic phase with the second phase of α-Fe₂O₃ in doped samples. The crystallite sizes of nanoparticles decreased with increasing Al content, and they are found to be in the range of 58.45 ± 5.90 to 15.58 ± 4.64 nm. SEM and TEM images show the agglomeration of nanoparticles with average particle size in the range of 60 to 75 nm. The FT-IR spectra confirm the presence of metal oxygen bonds of O-Fe-O and Fe-O in the FeO₆ octahedra. The UV-vis spectra show strong absorption peaks at approximately 285 nm, and the calculated optical band gaps are found to be in the range of 2.05 to 2.09 eV with increasing Al content. The M-H loop of the pure sample is antiferromagnetic, whereas those of the doped samples tend to be ferromagnetic with increasing Al content. The magnetization, remanent magnetization, and coercive field of the Al-doped sample with x = 0.5 are enhanced to 1.665 emu/g, 0.623 emu/g, and 4,087.0 Oe, respectively.     

Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

The excitation energy-dependent nature of Raman scattering spectrum, vibration, electronic or both, has been studied using different excitation sources on as-grown and annealed n- and p-type modulation-doped Ga_1 − xIn_xN_yAs_1 − y/GaAs quantum well structures. The samples were grown by molecular beam technique with different N concentrations (y = 0%, 0.9%, 1.2%, 1.7%) at the same In concentration of 32%. Micro-Raman measurements have been carried out using 532 and 758 nm lines of diode lasers, and the 1064 nm line of the Nd-YAG laser has been used for Fourier transform-Raman scattering measurements. Raman scattering measurements with different excitation sources have revealed that the excitation energy is the decisive mechanism on the nature of the Raman scattering spectrum. When the excitation energy is close to the electronic band gap energy of any constituent semiconductor materials in the sample, electronic transition dominates the spectrum, leading to a very broad peak. In the condition that the excitation energy is much higher than the band gap energy, only vibrational modes contribute to the Raman scattering spectrum of the samples. Line shapes of the Raman scattering spectrum with the 785 and 1064 nm lines of lasers have been observed to be very broad peaks, whose absolute peak energy values are in good agreement with the ones obtained from photoluminescence measurements. On the other hand, Raman scattering spectrum with the 532 nm line has exhibited only vibrational modes. As a complementary tool of Raman scattering measurements with the excitation source of 532 nm, which shows weak vibrational transitions, attenuated total reflectance infrared spectroscopy has been also carried out. The results exhibited that the nature of the Raman scattering spectrum is strongly excitation energy-dependent, and with suitable excitation energy, electronic and/or vibrational transitions can be investigated.     

Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

SiO_xN_y films with a low nitrogen concentration (< 4%) have been prepared on Si substrates at 400°C by atmospheric-pressure plasma oxidation-nitridation process using O₂ and N₂ as gaseous precursors diluted in He. Interface properties of SiO_xN_y films have been investigated by analyzing high-frequency and quasistatic capacitance-voltage characteristics of metal-oxide-semiconductor capacitors. It is found that addition of N into the oxide increases both interface state density (D_it) and positive fixed charge density (Q_f). After forming gas anneal, D_it decreases largely with decreasing N₂/O₂ flow ratio from 1 to 0.01 while the change of Q_f is insignificant. These results suggest that low N₂/O₂ flow ratio is a key parameter to achieve a low D_it and relatively high Q_f, which is effective for field effect passivation of n-type Si surfaces.     

Direct bandgap materials based on the thin films of SexTe100 ? x nanoparticles

In this study, we fabricated thin films of Se_xTe_{100 − x} (x = 0, 3, 6, 9, 12, and 24) nanoparticles using thermal evaporation technique. The results obtained by X-ray diffraction show that the as-synthesized nanoparticles have polycrystalline structure, but their crystallinity decreases by increasing the concentration of Se. They were found to have direct bandgap (E_g), whose value increases by increasing the Se content. These results are completely different than those obtained in the films of Se_xTe_{100 − x} microstructure counterparts. Photoluminescence and Raman spectra for these films were also demonstrated. The remarkable results obtained in these nanoparticles specially their controlled direct bandgap might be useful for the development of optical disks and other semiconductor devices.     

Aluminum-doped ceria-zirconia solid solutions with enhanced thermal stability and high oxygen storage capacity

A facile solvothermal method to synthesize aluminum-doped ceria-zirconia (Ce_0.5Zr_0.5-xAl_xO_2-x/2, x = 0.1 to 0.4) solid solutions was carried out using Ce(NH₄)₂(NO₃)₆, Zr(NO₃)₃·2H₂O Al(NO₃)₃·9H₂O, and NH₄OH as the starting materials at 200°C for 24 h. The obtained solid solutions from the solvothermal reaction were calcined at 1,000°C for 20 h in air atmosphere to evaluate the thermal stability. The synthesized Ce_0.5Zr_0.3Al_0.2O_1.9 particle was characterized for the oxygen storage capacity (OSC) in automotive catalysis. For the characterization, X-ray diffraction, transmission electron microscopy, and the Brunauer-Emmet-Teller (BET) technique were employed. The OSC values of all samples were measured at 600°C using thermogravimetric-differential thermal analysis. Ce_0.5Zr_0.3Al_0.2O_1.9 solid solutions calcined at 1,000°C for 20 h with a BET surface area of 18 m² g⁻¹ exhibited a considerably high OSC of 427 μmol-O g⁻¹ and good OSC performance stability. The same synthesis route was employed for the preparation of the CeO₂ and Ce_0.5Zr_0.5O₂. The incorporation of aluminum ion in the lattice of ceria-based catalyst greatly enhanced the thermal stability and OSC.     

A hot hole-programmed and low-temperature-formed SONOS flash memory

In this study, a high-performance Ti_xZr_ySi_zO flash memory is demonstrated using a sol–gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 μs with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 10⁶ s with only 5% (at 85°C) and 10% (at 125°C) charge loss. The barrier height of the Ti_xZr_ySi_zO film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-κ sol–gel film.     

Ferroelectric and magnetic properties of Nd-doped Bi4 ? xFeTi3O12 nanoparticles prepared through the egg-white method

Multiferroic behavior of Bi_{4 − x}Nd_xFeTi₃O₁₂ (0.0 ≤ × ≤ 0.25, × = 0.05) ceramic nanoparticles prepared through the egg-white method was investigated. The dielectric properties of the samples show normal behavior and are explained in the light of space charge polarization. Room temperature polarization-electric field (P-E) curves show that the samples are not saturated with maximum remanence polarization, P_r = 0.110 μC/cm², and a relatively low coercive field, E_c = of 7.918 kV/cm, at an applied field of 1 kV/cm was observed for 5% Nd doping. The room temperature M-H hysteresis curve shows that the samples exhibit intrinsic antiferromagnetism with a weak ferromagnetism. These properties entitle the grown nanoparticles of BNFT as one of the few multiferroic materials that exhibit decent magnetization and electric polarization.     

Ferromagnetic ordering in Mn-doped ZnO nanoparticles

Zn_1 - x Mn _x O nanoparticles have been synthesized by hydrothermal technique. The doping concentration of Mn can reach up to 9 at% without precipitation or secondary phase, confirmed by electron spin resonance (ESR) and synchrotron X-ray diffraction (XRD). Room-temperature ferromagnetism is observed in the as-prepared nanoparticles. However, the room-temperature ferromagnetism disappears after post-annealing in either argon or air atmosphere, indicating the importance of post-treatment for nanostructured magnetic semiconductors.     

Crystal Structure,Chemical Bonding and Magnetism Studies for Three Quinary Polar Intermetallic Compounds in the (Eu1?xCax)9In8(Ge1?ySny)8 (x = 0.66, y = 0.03) and the (Eu1?xCax)3In(Ge3?ySn1+y) (x = 0.66, 0.68; y = 0.13, 0.27) Phases

Three quinary polar intermetallic compounds in the (Eu_1−xCa_x)₉In₈(Ge_1−ySn_y)₈ (x = 0.66, y = 0.03) and the (Eu_1−xCa_x)₃In(Ge_3-ySn_1+y) (x = 0.66, 0.68; y = 0.13, 0.27) phases have been synthesized using the molten In-metal flux method, and the crystal structures are characterized by powder and single-crystal X-ray diffractions. Two orthorhombic structural types can be viewed as an assembly of polyanionic frameworks consisting of the In(Ge/Sn)₄ tetrahedral chains, the bridging Ge₂ dimers, either the annulene-like “12-membered rings” for the (Eu_1−xCa_x)₉In₈(Ge_1−ySn_y)₈ series or the cis-trans Ge/Sn-chains for the (Eu_1−xCa_x)₃In(Ge_3−ySn_1+y) series, and several Eu/Ca-mixed cations. The most noticeable difference between two structural types is the amount and the location of the Sn-substitution for Ge: only a partial substitution (11%) occurs at the In(Ge/Sn)₄ tetrahedron in the (Eu_1−xCa_x)₉In₈(Ge_1−ySn_y)₈ series, whereas both a complete and a partial substitution (up to 27%) are observed, respectively, at the cis-trans Ge/Sn-chain and at the In(Ge/Sn)₄ tetrahedron in the (Eu_1−xCa_x)₃In(Ge_3−ySn_1+y) series. A series of tight-binding linear muffin-tin orbital calculations is conducted to understand overall electronic structures and chemical bonding among components. Magnetic susceptibility measurement indicates a ferromagnetic ordering of Eu atoms below 5 K for Eu_1.02(1)Ca_1.98InGe_2.87(1)Sn_1.13.     

Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps

In this work, we study the impact of random interface traps (RITs) at the interface of SiO _x /Si on the electrical characteristic of 16-nm-gate high-κ/metal gate (HKMG) bulk fin-type field effect transistor (FinFET) devices. Under the same threshold voltage, the effects of RIT position and number on the degradation of electrical characteristics are clarified with respect to different levels of RIT density of state (D_it). The variability of the off-state current (I_off) and drain-induced barrier lowering (DIBL) will be severely affected by RITs with high D_it varying from 5 × 10¹² to 5 × 10¹³ eV⁻¹ cm⁻² owing to significant threshold voltage (V_th) fluctuation. The results of this study indicate that if the level of D_it is lower than 1 × 10¹² eV⁻¹ cm⁻², the normalized variability of the on-state current, I_off, V_th, DIBL, and subthreshold swing is within 5%.     

The obtaining of high-density specimens and analysis of mechanical strength characteristics of a composite based on ZrO2-WC nanopowders

The structures, processes of shrinkage, and phase composition of the compact system ZrO₂-WC, obtained by hot pressing with the transmission of high current, are considered in the article. We found that as a result of compaction, the ZrO₂-WC-ceramics have uniform density distribution, with the following optimal mode consolidation values T = 1,350°C, P = 30 MPa and t = 2 min. These conditions allow us to achieve the best combination of ceramic properties by criteria density and strength.     

Formation of needle-like titanium oxynitride particles through nitridation of hydrated titanates

The process of nitridation of hydrated titanate wires was examined by thermal gravimetric (TG) analysis in an NH₃/Ar (50/50 vol.%) gas mixture, X-ray diffraction (XRD) measurement, field emission scanning electron microscope (FE-SEM) and transmission electron microscope (TEM) observations and X-ray photoelectron spectroscopic (XPS) analysis. The nitridation of the hydrated titanate nanowires was accompanied by a two-stage weight loss. In the first stage, occurring in the temperature range of 50-400 °C, the hydrated titanate wires changed to anatase-type TiO₂ nanoparticles with the releasing of H₂O molecules. In the second stage, occurring in the temperature range of 700-1000 °C, the TiO₂ nanoparticles were converted to rock-salt-type titanium oxynitride (TiN_xO_y) nanoparticles. Subsequently, the TiN_xO_y nanoparticles were sintered each other at around 1000 °C. Under a gas flow of 100% NH₃, the hydrated titanate wires were completely changed to TiN_xO_y particles at a temperature greater than 950 °C, which was maintained for 2 h. It is possible to fabricate needle-like TiN_xO_y particles by selecting thick hydrated titanate wires as the starting materials.