Exciton localization in vertically and laterally coupled GaN/AlN quantum dots

Near-field and time-resolved photoluminescence measurements show evidence of exciton localization in vertically and laterally coupled GaN quantum dots (QDs). The binding energies in multiple period QDs (MQDs) are observed to be stronger by more than six times compared to single period QDs (SQDs). Excitons in MQDs have a short (450 ps) lifetime and persist at room temperature, while SQDs exhibit extraordinarily long (>5 ns) lifetime at 10 K due to reduced spatial overlap of electron and hole wave functions in strained QDs.     

Molecular ground hole state of vertically coupled GeSi/Si self-assembled quantum dots

We study the ground state of a hole confined in two vertically coupled GeSi/Si quantum dots as a function of the interdot distance and dot composition within the sp(3) tight-binding approach. Both quantum-mechanical tunneling and inhomogeneous strain distribution are included. For pure Ge dots, the strain is found to have two effects on the hole binding energy: (i)?reduction of the binding energy below the value of the single dot with increasing dot separation and (ii)?molecular bond breaking for intermediate interdot distances and posterior bond restoration at larger distance. Both effects are smeared upon Ge-Si intermixing.     

Fano-Rashba effect in quantum dots

We consider the electronic transport through a Rashba quantum dot coupled to ferromagnetic leads. We show that the interference of localized electron states with resonant electron states leads to the appearance of the Fano-Rashba effect. This effect occurs due to the interference of bound levels of spin-polarized electrons with the continuum of electronic states with an opposite spin polarization. We investigate this Fano-Rashba effect as a function of the applied magnetic field and Rashba spin-orbit coupling.     

Transport properties of coupled semiconductor quantum dots

We have measured the electronic transport properties of the coupled quantum dot devices at low temperatures. The interplay between the strong many body spin interaction and the molecular states are probed in linear and non-linear transport regime. We observe the formation of strong coherent molecular states clearly visible in the double dot conductance phase diagram. In our study, the spin configuration in multiply coupled quantum dots could be identified using Kondo phenomenon. In addition, the characteristics of the spin dependent molecular states and phase dependant tunneling have been also observed using non-linear conductance measurement of the double dots. The results suggest the importance of the diverse spin related physical issues in artificial quantum dot devices.     

Stark effect in a multilayer system of coupled InAs/GaAs quantum dots

Electron emission in a system of vertically coupled quantum dots (VCQDs) in InAs/GaAs p-n-heterostructures obtained by molecular beam epitaxy has been studied by means of deep-level transient spectroscopy (DLTS) as a function of the number of quantum dot (QD) rows and the reverse bias voltage. For a GaAs spacer thickness of d _GaAs = 40 Å, the system occurs in a molecular state, irrespective of the number of QD rows. An increase in this number leads to a decrease in the Stark shift, which is probably related to a decrease in the lattice strain potential in the vicinity of VCQDs.     

Transcending binary logic by gating three coupled quantum dots

Physical considerations supported by numerical solution of the quantum dynamics including electron repulsion show that three weakly coupled quantum dots can robustly execute a complete set of logic gates for computing using three valued inputs and outputs. Input is coded as gating (up, unchanged, or down) of the terminal dots. A nanosecond time scale switching of the gate voltage requires careful numerical propagation of the dynamics. Readout is the charge (0, 1, or 2 electrons) on the central dot.     

Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots

Vertically stacked multilayers of self-organized InAs/GaAs quantum dots (QDs) structures with different GaAs intermediate layer thicknesses varying between 2.8 and 17 nm are grown by solid source molecular beam epitaxy (SSMBE) and investigated by photoluminescence spectroscopy (PL). For 17 nm thick GaAs spacer, the PL spectra show two well separated features attributed to the formation of two QDs family with a bimodal size distribution indicating no correlation between the dots in different layers. In the meanwhile, the structures having thinner spacer thickness demonstrate single PL peaks showing an enhancement of high energy side asymmetrical broadening when increasing the excitation power. The corresponding emission energies exhibit a red shift when the spacer layer thickness decreases and correlated with the enhancement of the vertical electronic coupling as well as the rise of the QD's size in the upper layers induced by the build up of the strain field along the columns. The spacer thickness of 8.5 nm is found to yield the best optical properties.     

Localized surface plasmon resonances arising from free carriers in doped quantum dots

Localized surface plasmon resonances (LSPRs) typically arise in nanostructures of noble metals resulting in enhanced and geometrically tunable absorption and scattering resonances. LSPRs, however, are not limited to nanostructures of metals and can also be achieved in semiconductor nanocrystals with appreciable free carrier concentrations. Here, we describe well-defined LSPRs arising from p-type carriers in vacancy-doped semiconductor quantum dots (QDs). Achievement of LSPRs by free carrier doping of a semiconductor nanocrystal would allow active on-chip control of LSPR responses. Plasmonic sensing and manipulation of solid-state processes in single nanocrystals constitutes another interesting possibility. We also demonstrate that doped semiconductor QDs allow realization of LSPRs and quantum-confined excitons within the same nanostructure, opening up the possibility of strong coupling of photonic and electronic modes, with implications for light harvesting, nonlinear optics, and quantum information processing.     

Multiple exciton generation in films of electronically coupled PbSe quantum dots

We study multiple exciton generation (MEG) in electronically coupled films of PbSe quantum dots (QDs) employing ultrafast time-resolved transient absorption spectroscopy. We demonstrate that the MEG efficiency in PbSe does not decrease when the QDs are treated with hydrazine, which has been shown to greatly enhance carrier transport in PbSe QD films by decreasing the interdot distance. The quantum yield is measured and compared to previously reported values for electronically isolated QDs suspended in organic solvents at approximately 4 and 4.5 times the effective band gap. A slightly modified analysis is applied to extract the MEG efficiency and the absorption cross section of each sample at the pump wavelength. We compare the absorption cross sections of our samples to that of bulk PbSe. We find that both the biexciton lifetime and the absorption cross section increase in films relative to isolated QDs in solution.     

Electronic transport properties of coupled quantum dots on carbon nanotubes

We investigate the electronic transport properties of coupled quantum dots, controlled by local gates on carbon nanotubes. The inter-dot coupling can be tuned from weak to strong by changing gate voltages, and oscillates in short and long period with the distance between two gates. We introduce a one-dimensional scattering model to describe the mechanism of the electron transport through the carbon nanotube quantum dots. We show that pi and PI* channels contribute differently to the inter-dot coupling and the transport phase plays a key role in the oscillations of the coupling.     

Local absorption spectra of single and coupled semiconductor quantum dots

We study theoretically the local absorption spectra of single and double semiconductor quantum dots (QDs), in the linear regime. The three-dimensional confinement leads to an enhancement of the Coulomb correlations, while the spectra depend crucially on the size of the ‘local’ probe. We show that because of such Coulomb correlations the intensity of certain optical peaks as a function of the resolution can exhibit an unexpected non-monotonic behavior for spatial resolutions comparable with the excitonic Bohr radius. We finally discuss the optical near-field properties of coupled QDs for different coupling strengths.     

Photoluminescence plasmonic enhancement in InAs quantum dots coupled to gold nanoparticles

Photoluminescence enhancement due to dipole field from gold nanoparticles was observed at 77 K for GaAs capped InAs quantum dots. The gold nanoparticles were coupled to the surface of the cap layer by using dithiol ligands. The enhancement was investigated as a function of the GaAs capped layer thickness. An order of magnitude enhancement in the emission was observed in samples with a cap thickness of 12 nm. This enhancement however is drastically decreased in samples with a cap thickness of 200 nm. The observed enhancement is interpreted in terms of photon scattering from the large dipole scattering cross section.     

Engineering quantum confinement and orbital couplings in laterally coupled vertical quantum dots for spintronic applications

We use three-dimensional self-consistent Kohn-Sham's equations coupled with Poisson's equation to investigate the electrical behavior of laterally coupled vertical quantum dots (LCVQD) for spin-qubit operation. The shape and the depth of the central gate are changed in different ways to correlate gate geometry with the coupling between the two quantum dots. Upon comparing LCVQD single-gate and the split-gate structures, we found that the two inherently different designs result in different energy barrier profiles leading to dissimilar wavefunction coupling between the two dots. Finally, we show that the doping concentrations in the layered structure could be optimized for practical two-qubit operation.     

The effect of solvent dependent local field factor in the optical properties of CdTe quantum dots

CdTe quantum dots (QDs) are synthesized at room temperature in aqueous solvents of different dielectric constants and characterized using optical spectroscopy. Absorption spectra of the QDs obtained is used to calculate the size dependent dielectric function of the QDs using Kramers–Kronig relation and iterative matrix inversion method. Effect of solvent dielectric constant on optical properties of QDs is studied theoretically using Maxwell–Garnett effective medium theory. Direct correlation between absorption intensity and solvent dielectric constant is explained on the basis of decreasing local field factor of the solvents. Emission rates of QDs is also found to have dependence on the dielectric constant of the solvent. Spontaneous emission rates of QDs in Ionic liquid environment is studied theoretically using Maxwell–Garnett effective medium theory. Our results show that variation in dielectric constant of Ionic liquids have a significant impact on spontaneous emission properties of the QDs.     

A molecule to detect and perturb the confinement of charge carriers in quantum dots

This paper describes unprecedented bathochromic shifts (up to 970 meV) of the optical band gaps of CdS, CdSe, and PbS quantum dots (QDs) upon adsorption of an organic ligand, phenyldithiocarbamate (PTC), and the use of PTC to map the quantum confinement of specific charge carriers within the QDs as a function of their radius. For a given QD material and physical radius, R, the magnitude of the increase in apparent excitonic radius (ΔR) upon delocalization by PTC directly reflects the degree of quantum confinement of one or both charge carriers. The plots of ΔR vs R for CdSe and CdS show that exciton delocalization by PTC occurs specifically through the excitonic hole. Furthermore, the plot for CdSe, which spans a range of R over multiple confinement regimes for the hole, identifies the radius (R～1.9 nm) at which the hole transitions between regimes of strong and intermediate confinement. This demonstration of ligand-induced delocalization of a specific charge carrier is a first step toward eliminating current-limiting resistive interfaces at organic-inorganic junctions within solid-state hybrid devices. Facilitating carrier-specific electronic coupling across heterogeneous interfaces is especially important for nanostructured devices, which comprise a high density of such interfaces.     

Vertically ordered magnetic EuTe quantum dots stacks on SnTe matrices

Stacked EuTe magnetic quantum dots (QDs) separated by SnTe spacers of increasing thickness were grown and studied using x-ray diffraction (XRD) and electron microscopy. Grazing incidence XRD indicated that the EuTe QDs are under compressive in-plane strain. Both XRD analysis and microscopy images demonstrated that the EuTe QDs are vertically aligned, as a result of the strain field produced by buried QDs. The width of the lateral error distribution in the QDs' vertical alignment from layer to layer decreases for thinner SnTe spacers, corresponding to more stressed SnTe matrices. The system can be, therefore, tuned to explore magnetic interactions between QDs. The results are discussed in the light of previous elastic strain models in anisotropic matrices from the literature.     

Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer

We report electrically injected lasing in GaAs quantum dots (QDs) grown on GaAs(001) by droplet epitaxy. High-quality GaAs QDs with superior uniformity are formed using improved growth techniques involving the insertion of a two-dimensional layer, control of the As flux for GaAs crystallization, and thin AlGaAs layer capping with high-temperature annealing. The QDs show ultra-narrow luminescence with a linewidth of 20?meV. Ground-state lasing from a laser diode containing fivefold-stacked QD layers is observed at low temperature under pulsed operation.     

A quantum loop in magnetic field and a quantum interference rectifier

The electron transport in a curvilinear quantum wire exposed to a magnetic field was studied. A possible design of the quantum interference rectifier is suggested.