指导nMOS数字电路元件级设计的开关信号理论

本文指出了布尔代数在指导数字电路设计中的不足，并在区分描写开关状态与信号的二类变量的基础上建立了能反映数字电路内开关元件与信号相互作用过程的开关信号理论。本文把该理论具体用于对ｎＭＯＳ数字电路的研究，结果表明该理论可很好地指导ｎＭＯＳ数字电路在元件级的逻辑设计。     

适用于TTL数字电路元件级设计的开关—信号理论

本文分析了以布尔代数为基础的数字电路设计的不足，提出了将开关状态和信号这二类变量分别描写的观点，讨论了ＴＴＬ电路中晶体管开关元件与信息之间的相互作用过程，在此基础上，建立了适用于ＴＴＬ电路的限幅电压开关理论，设计实例说明，该理论能有效地指导各类ＴＴＬ电路在元件级的逻辑设计。     

开关——信号理论与数字电路的开关级设计

本文在分析数字电路的传统设计理论中存在问题的基础上，提出了使用开关变量与信号变量来分别描写数字电路内部元件的开关状态与电路信号等二者，并由此出发建立了开关——信号理论。根据具体数字电路内部的工作原理，本文分别对CMOS与ECL等二种电路进行了讨论．并发展了相应的开关级设计技术。设计实例表明，由于设计中以开关晶体管为构造单元，因此开关级设计的电路要比传统的仃级设计具有较简单的结构。     

电路三要素理论和布尔代数失效原因分析

本文提出一个克服布尔代数失效的电路三要素理论。文中首先分析布尔代数在数字电路中失效的原因,接着证明开关运算定理等,它概括了文献中曾需一一证明的绝大多数开关运算等式,然后表明:数字电路的统一性既存在于门级和元件级电路间,也存在于各型元件级电路结构间,以及动态与静态电路间。此外,本文提出元件级电路设计的卡诺图方法和代数方法。     

基于开关信号理论的三值电流型CMOS电路设计

本文应用开关信号理论对电流型CMOS电路中MOS传输开关管与电流信号之间的相互作用进行了分析,并提出了适用于电流型CMOS电路的传输电流开关理论。应用该理论设计的三值全加器等电路具有简单的电路结构和正确的逻辑功能,从而证明了该理论在指导电流型CMOS电路在开关级逻辑设计中的有效性。     

电路短要素理论和布尔代数失效原因分析

本文提出一个克服布尔代数失效的电路短要素理论。言语中首先分析布尔代数在数字电路中失峁的原因,接着证明开关运算定理等,它概括了文献中曾需一一证明的绝大多数开关运算等式,然后表明;数字电路的统一性暨存在于六级和元件级电路间,也存在于各型元件级电路结构间,以及动态与静态电路间,此外,本语文提出元件级电路垢卡诺图方法代数方法。     

PIPELINED多值A/D转换器

通过对多值ADC数学表示的分析,指出了多值ADC具有更高的信息密度。本文结合数字电路的开关信号理论,设计了Pipelined三值ADC。该ADC在保证较高转换速度的同时具有相对简单的电路结构。     

对称三值电流型CMOS电路设计

本文应用开关信号理论,建立了采用对称三值逻辑的传输电流开关理论,该理论能指导从开关级设计对称三值电流型CMOS电路.应用该理论设计的对称三值电流型CMOS电路不仅具有简单的电路结构和正确的逻辑功能,而且能处理具有双向特性的信号.     

基于传输开关理论的电流型多值CMOS电路设计

本文以开关信号理论为指导，对电流型CMOS电路中开关变量和信号变量的相互作用进行了分析，并引入了适用于CMOS电路的电流开关理论。基于电流传输开关理论，对几类重要的三值CMOS电路进行了设计，结果表明，应用该理论能获得简单的电路设计。从而进一步完善了开关级逻辑电路设计的研究。     

汽车门锁控制电路分析与设计

汽车门锁控制的目的是为了防止驾驶员将钥匙忘在车内而专门设计的控制电路。其主要由各开关输入信号和若干个数字电路中常用的基本门电路组合而成。该设计的实质是组合逻辑门电路在汽车数字电路中的综合应用。本文分析了各种情况下车门锁控制电路的工作过程,并运用学习的数字门电路知识对汽车门锁控制电路进行设计。     

Theory of differential current switches and logic design of ternary ECL circuits at switch level

Starting from the viewpoint that the switch states and signal values in a digital circuit should be described separately by two different kinds of variable, the interaction between the switching element and signal in multi-valued ECL circuits is analysed and two types of connection operations, threshold switching operation and current switching operation, are proposed. The properties and circuit realizations of these new operations are discussed and the theory of differential current switches applicable to ECL circuits is established. Examples of basic ternary ECL circuits confirm that this theory can effectively guide the logic design of ternary ECL circuits at switch level. The circuits are verified by using the SPICE II program. They have the same logic level difference and transient characteristic as binary ECL circuits. Since the multi-valued ECL circuit uses only one set of power supply and can set several threshold values by using reference levels, it can be fabricated using conventional ECL techniques and is compatible with binary ECL circuits.     

ECL集成电路的四值接口技术

本文介绍了适用于多值ECL电路设计的差动电流开关理论。在该理论中,分别用开关变量和四值信号变量来描写ECL电路中差动晶体管对的开关状态和信号,并引入此两类变量之间的联结运算,以描写电路内部开关元件与信号的相互作用过程。基于该理论,本文对两种接口电路2-4编码器和4-2译码器进行了设计。应用SPICE程序对设计电路的计算机模拟表明,两种电路均具有正确的逻辑功能、理想的DC转移特性和瞬态特性。由于该接口电路具有与二值电路兼容的集成工艺、电源设备、逻辑级差和瞬态特性,因此它可用作现有二值ECL集成电路的输入输出接口,从而达到减少芯片的引脚数和片间连接的目的。     

THE QUATERNARY INTERFACE TECHNIQUE IN ECL INTEGRATED CIRCUITS

The theory of differential current switches which applies to the design of multivaluedECL circuits is introduced.In this theory,the switching state of differential transistor pairand signal in ECL circuits are described by switching variables and quaternary signal variables,respectively.he connection operations between the two kinds of variables are introduced todescribe the action process between switching element and signal in the circuits.Based on thistheory,two kinds of interface circuits-2-4 encoder and 4-2 decoder are designed.The computersimulation for the designed circuits by using SPICE program confirms that both circuits havecorrect logic functions,desired DO transfer characteristics and transient characteristics.Theseinterface circuits are compatible with binary circuits in the integrated process,the power supplyequipment,the logic stage and the transient characteristic.Therefore,they can be used as input-output interface of the existing binary ECL integrated circuits so as to decrease the number ofpins of a chip and the connections between chips.     

Novel dynamic merged load technology

Two new device concepts for dynamic ratioless inverter logic circuits are presented. Very high circuit density is achieved by replacing the traditional MOS dynamic load transistor with a novel load element which is merged with the switching transistor. Both device types can be implemented with a relatively standard double polysilicon CMOS process and are ideally suited for very low-power digital signal processors, serial memories and correlators, and digital image processors.     

The impact of semiconductor technology scaling on CMOS RF and digital circuits for wireless application

The impact of CMOS technology scaling on the various radio frequency (RF) circuit components such as active, passive and digital circuits is presented. Firstly, the impact of technology scaling on the noise and linearity of the low-noise amplifier (LNA) is thoroughly analyzed. Then two new circuits, i.e., CMOS complementary parallel push-pull (CCPP) circuit and vertical-NPN (V-NPN) circuit for direct-conversion receiver (DCR), are introduced. In CCPP, the high RF performance of pMOS comparable to nMOS provides single ended differential RF signal processing capability without the use of a bulky balun. The use of parasitic V-NPN bipolar transistor, available in triple well CMOS technology, has shown to provide more than an order of magnitude improvement in 1/f noise and dc offset related problems, which have been the bottleneck for CMOS single chip integration. Then CMOS technology scaling for various passive device performances such as the inductor, varactor, MIM capacitor, and switched capacitor, is discussed. Both the forward scaling of the active devices and the inverse scaling of interconnection layer, i.e., more interconnection layers with effectively thicker total dielectric and metal layers, provide very favorable scenario for all passive devices. Finally, the impact of CMOS scaling on the various digital circuits is introduced, taking the digital modem blocks, the various digital calibration circuits, the switching RF power amplifier, and eventually the software defined radio, as examples.     

Modeling for bridging faults in nMOS combinational circuits

A transistor level model that fully describes the logical behavior of a circuit in the presence of bridging faults is presented for the nMOS combinational circuits. The proposed model is suitable for the circuits having static enhancement/depletion (E/D) load. Thus, the model can be applied to circuits like pseudo nMOS and CMOS non-threshold-logic (NTL). The model employs a logic transistor function (LTF) to examine the behavior of such circuits. The LTF model developed earlier for stuck faults in nMOS circuits is extended for bridging faults. Algorithms that were developed for the stuck faults in pseudo nMOS combinational circuits can be applied to generate the test vectors for bridging faults.     

Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse

A three-transistor (3-T) cell CMOS one-time programmable (OTP) ROM array using CMOS antifuse (AF) based on permanent breakdown of MOSFET gate oxide is proposed, fabricated and characterized. The proposed 3-T OTP cell for ROM array is composed of an nMOS AF, a high-voltage blocking nMOS, and cell access transistor, all compatible with standard CMOS technology. The experimental results show that the proposed structure can be a viable technology option of high-density CMOS OTP ROM array for modern digital as well as analog circuits.     

Substrate coupling in digital circuits in mixed-signal smart-power systems

This paper describes theoretical and experimental data characterizing the sensitivity of nMOS and CMOS digital circuits to substrate coupling in mixed-signal, smart-power systems. The work presented here focuses on the noise effects created by high-power analog circuits and affecting sensitive digital circuits on the same integrated circuit. The sources and mechanism of the noise behavior of such digital circuits are identified and analyzed. The results are obtained primarily from a set of dedicated test circuits specifically designed, fabricated, and evaluated for this work. The conclusions drawn from the theoretical and experimental analyses are used to develop physical and circuit design techniques to mitigate the substrate noise problems. These results provide insight into the noise immunity of digital circuits with respect to substrate coupling.