A Laterally Movable Gate Field Effect Transistor

A laterally movable gate field effect transistor (LMGFET) device that directly couples lateral mechanical gate motion to drain current of a FET is presented in this paper. Lateral motion of the FET gate results in a change in channel width, keeping the channel length and the gap between the gate and the oxide layer constant. This results in a change in channel current that, in principle, is linearly proportional to mechanical motion. The operating principle of an LMGFET, along with details of the fabrication process for a depletion-type LMGFET device, is described. Fabricated LMGFET shows an average drain current sensitivity to gate motion of $-5.8 muhbox{A}/muhbox{m}$ at $V_{rm DS} = 20 hbox{V}$ and $V_{rm GS} = 0 hbox{V}$ for 60-$muhbox{m}$ gate motion. A model for the fabricated LMGFET is developed based on electrical measurements. The device shows promise both as a sensor and as an actuator in MEMS and other related applications.$hfill$ [2008-0147]      

A Programmable Array for Contact-Free Manipulation of Floating Droplets on Featureless Substrates by the Modulation of Surface Tension

This paper presents a contactless droplet manipulation system that relies on thermally generated Marangoni flows. Programmable 2-D control of aqueous microdroplets suspended in an oil film on a plain featureless glass substrate is achieved using a 128-pixel heater array suspended 100–500 $mu hbox{m}$ above the oil layer. The heaters generate surface temperature perturbations $(≪ 25 ^{circ}hbox{C})$, resulting in local Marangoni flows that can move droplets in either a push or a pull mode. Programmed movement is achieved by the sequential activation of the heaters, with digital control circuitry and a graphical interface providing addressable control of each heater. Droplets with diameters of 300–1000 $muhbox{m}$ are manipulated and merged at speeds up to 140 $muhbox{m/s}$. Evaporation rates can be reduced by almost two orders of magnitude by using a two-layer-oil medium, and the choice of an optimum carrier fluid can achieve fluid velocities over 17 000 $mu hbox{m/s}$. The system provides a contactless platform for parallel droplet-based assays. As such, it circumvents the challenges of sample contamination and loss that occur when a droplet interacts with a solid surface.$hfill$[2008-0272]      

Cryogenic Etching of Silicon: An Alternative Method for Fabrication of Vertical Microcantilever Master Molds

This paper examines the use of deep reactive ion etching of silicon with fluorine high-density plasmas at cryogenic temperatures to produce silicon master molds for vertical microcantilever arrays used for controlling substrate stiffness for culturing living cells. The resultant profiles achieved depend on the rate of deposition and etching of an $hbox{SiO}_{x}hbox{F}_{y}$ polymer, which serves as a passivation layer on the sidewalls of the etched structures in relation to areas that have not been passivated with the polymer. We look at how optimal tuning of two parameters, the $ hbox{O}_{2}$ flow rate and the capacitively coupled plasma power, determine the etch profile. All other pertinent parameters are kept constant. We examine the etch profiles produced using electron-beam resist as the main etch mask, with holes having diameters of 750 nm, 1 $muhbox{m}$ , and 2 $muhbox{m}$. $hfill$[2008-0317]      

Analytical Model of Valveless Micropumps

The flow driven by a valveless micropump with a single cylindrical pump chamber and two diffuser/nozzle elements is studied theoretically using a 1-D model. The pump cavity is driven at an angular frequency $omega$ so that its volume oscillates with an amplitude $V_{rm m}$. The presence of diffuser/nozzle elements with pressure-drop coefficients $zeta_{+}$, $zeta_{-}( ≫ zeta_{+})$ and throat cross-sectional area $A_{1}$ creates a rectified mean flow. In the absence of frictional forces the maximum mean volume flux (with zero pressure head) is $Q_{0}$ where $Q_{0}/V_{rm m}omega = (zeta_{-} -break zeta_{+})pi/16(zeta_{-}+zeta_{+})$, while the maximum pressure that can be overcome is $Delta P_{max}$ where $ Delta P_{max}A_{1}^{2}/V_{rm m}^{2} omega^{2} !=! (zeta_{-} -break zeta_{+})/16$. These analytical results agree with numerical calculations for the coupled system of equations and compare well with the experimental results of Stemme and Stemme.$hfill$ [2008-0244]      

A Novel Diamond Microprobe for Neuro-Chemical and -Electrical Recording in Neural Prosthesis

This paper describes the design, microfabrication, and testing of a novel polycrystalline-diamond (poly-C)-based microprobe for possible applications in neural prosthesis. The probe utilizes undoped poly-C with a resistivity on the order of $10^{5} Omegacdothbox{cm}$ as a supporting material, which has a Young's modulus in the range of 400–1000 GPa and is biocompatible. Boron-doped poly-C with a resistivity on the order of $10^{-3} Omegacdot hbox{cm}$ is used as an electrode material, which provides a chemically stable surface for both chemical and electrical detections in neural studies. The probe has eight poly-C electrode sites with diameters ranging from 2 to 150 $muhbox{m}$; the electrode capacitance is approximately 87 $muhbox{F/cm}^{2}$. The measured water potential window of the poly-C electrode spans across negative and positive electrode potentials and typically has a total value of 2.2 V in 1 M KCl. The smallest detectable concentration of norepinephrine (a neurotransmitter) was on the order of 10 nM. The poly-C probe has also been successfully implanted in the auditory cortex area of a guinea pig brain for in vivo neural studies. The recorded signal amplitude was 30–40 $muhbox{V}$ and had a duration of 1 ms. $hfill$[2008-0195]      

A Low-Voltage Large-Displacement Large-Force Inchworm Actuator

Inchworm microactuators are popular in micropositioning applications for their long ranges. However, until now, they could not be considered for applications such as in vivo biomedical applications because of their high input voltages. This paper reports on the modeling, design, fabrication, and testing of a new family of pull-in-based electrostatic inchworm microactuators which provides a solution to this problem. Actuators with only 7-V operating voltage are achieved with a $pm 18hbox{-}muhbox{m}$ total range and a $pm 30hbox{-}muhbox{N}$ output force. Larger operating voltage (16 V) actuators show even better results in force ($pm 110 mu hbox{N}$) and range $(pm 35 muhbox{m})$. The actuator has an in-plane angular deflection conversion which provides a force-displacement tradeoff and allows us to set step sizes varying from few nanometers to few micrometers with a minor change in design. In this paper, we designed 1- and 4-$muhbox{m}$ step-size devices. The actuator step size may change during the operation because of the slipping of the shuttle and the beam bending; however, our model successfully explains the reasons. One of our actuator prototypes has survived more than 25 million cycles without performance deterioration. The device is fabricated using the silicon-on-insulator-based multiuser MEMS process.$hfill$[2007-0146]      

A Bubble-Free AC Electrokinetic Micropump Using the Asymmetric Capacitance-Modulated Microelectrode Array for Microfluidic Flow Control

A novel ac electrokinetic micropumping device based on ac electro-osmotic flow induced by asymmetrically capacitance/chemistry-modulated microelectrode arrays has been successfully developed and demonstrated. Asymmetric capacitance modulation is made of comb electrode arrays and parts of individual electrode surfaces are modulated/deposited with a $hbox{SiO}_{2}$ dielectric layer. This proposed design can be utilized to shift the optimal operation frequency of maximum velocity from tens of kilohertz to megahertz to minimize electrolytic bubble generation and enhance micropumping performance. The pumping velocity, described in this paper, is measured via the tracing of microbeads and is a function of applied potential, signal frequency, buffer concentration, and dielectric layer thickness. A maximum pumping velocity up to 290 $muhbox{m} cdot hbox{s}^{-1}$ in 5-mM buffer solution with the applied potential of 10 Vpp is observed in our prototype device, and the estimated maximum flow rate is up to 26.1 $muhbox{l} cdot hbox{h}^{-1}$. This is the first successful demonstration regarding bubble-free ac electrokinetic micropumping via such an asymmetrically capacitance-modulated electrode arrays. Design, simulation, microfabrication, experimental result, and theoretical model are described in this paper to characterize and exhibit the performance of proposed novel bubble-free ac electrokinetic micropump.$hfill$[2008-0030]      

Tungsten-Based SOI Microhotplates for Smart Gas Sensors

This paper is concerned with the design, fabrication, and characterization of novel high-temperature silicon on insulator (SOI) microhotplates employing tungsten resistive heaters. Tungsten has a high operating temperature and good mechanical strength and is used as an interconnect in high temperature SOI-CMOS processes. These devices have been fabricated using a commercial SOI-CMOS process followed by a deep reactive ion etching (DRIE) back-etch step, offering low cost and circuit integration. In this paper, we report on the design of microhotplates with different diameters (560 and 300 $muhbox{m}$) together with 3-D electrothermal simulation in ANSYS, electrothermal characterization, and analytical analysis. Results show that these devices can operate at high temperatures (600 $^{circ}hbox{C}$ ) well beyond the typical junction temperatures of high temperature SOI ICs (225 $^{circ}hbox{C}$), have ultralow dc power consumption (12 mW at 600 $^{circ}hbox{C}$), fast transient time (as low as 2-ms rise time to 600 $^{circ}hbox{C}$), good thermal stability, and, more importantly, a high reproducibility both within a wafer and from wafer to wafer. We also report initial tests on the long-term stability of the tungsten heaters. We believe that this type of SOI microhotplate could be exploited commercially in fully integrated microcalorimetric or resistive gas sensors. $hfill$[2007-0275]      

Post-CMOS-Compatible Aluminum Nitride Resonant MEMS Accelerometers

This paper describes the development of aluminum nitride (AlN) resonant accelerometers that can be integrated directly over foundry CMOS circuitry. Acceleration is measured by a change in resonant frequency of AlN double-ended tuning-fork (DETF) resonators. The DETF resonators and an attached proof mass are composed of a 1- $muhbox{m}$ -thick piezoelectric AlN layer. Utilizing piezoelectric coupling for the resonator drive and sense, DETFs at 890 kHz have been realized with quality factors $(Q)$ of 5090 and a maximum power handling of 1 $muhbox{W}$. The linear drive of the piezoelectric coupling reduces upconversion of $1/f$ amplifier noise into $1/f^{3}$ phase noise close to the oscillator carrier. This results in lower oscillator phase noise, $-$96 dBc/Hz at 100-Hz offset from the carrier, and improved sensor resolution when the DETF resonators are oscillated by the readout electronics. Attached to a 110-ng proof mass, the accelerometer microsystem has a measured sensitivity of 3.4 Hz/G and a resolution of 0.9 $hbox{mG}/surdhbox{Hz}$ from 10 to 200 Hz, where the accelerometer bandwidth is limited by the measurement setup. Theoretical calculations predict an upper limit on the accelerometer bandwidth of 1.4 kHz.$hfill$ [2008-0190]      

Design, Modeling, and Fabrication of MEMS-Based Multicapillary Gas Chromatographic Columns

This paper describes different approaches to achieve high-performance microfabricated silicon-glass separation columns for microgas chromatography systems. The capillary width effect on the separation performance has been studied by characterization of 250-, 125-, 50-, and 25-$muhbox{m}$ -wide single-capillary columns (SCCs) fabricated on a $10 times 8 hbox{mm}^{2}$ die. The highest plate number (12 500/m), reported to date for MEMS-based silicon-glass columns, has been achieved by 25-$muhbox{m}$-wide columns coated by a thin layer of polydimethylsiloxane stationary phase using static coating technique. To address the low sample capacity of these narrow columns, this paper presents the first generation of MEMS-based “multicapillary” columns (MCCs) consisting of a bundle of narrow-width rectangular capillaries working in parallel. The theoretical model for the height-equivalent-to-a-theoretical-plate $(HETP)$ of rectangular MCCs has been developed, which relates the $HETP$ to the discrepancies of the widths and depths of the capillaries in the bundle. Two-, four-, and eight-capillary MCCs have been designed and fabricated to justify the separation ability of these columns. These MCCs capable of multicomponent gas separation provide a sample capacity as large as 200 ng compared to 5.5 ng for 25-$muhbox{m}$-wide SCCs.$hfillhbox{[2007-0309]}$      

A Fast Liquid-Metal Droplet Microswitch Using EWOD-Driven Contact-Line Sliding

Liquid-metal (LM) droplet-based MEMS switches have mostly been restricted to slow applications until now due to the following reasons: 1) a relatively large switching gap (distance) needed to accommodate imprecise volumes and locations of droplets on the device and 2) lack of high-speed actuation to move the droplets quickly across the switching gap. To combat these problems, we explore switching by sliding the solid–LM–gas triple contact line rather than the entire droplet. This new approach allows us to use a microframe, which not only consistently positions the LM droplet but also makes the switching gap less sensitive to the errors in the deposited-droplet volume, allowing us to design microswitches with very small switching gaps (e.g., 10 $muhbox{m}$ for 600 $muhbox{m}$-diameter droplets). Furthermore, a study of electrowetting-on-dielectric identifies a regime of fast contact-line sliding at the onset of droplet spreading. By moving the contact line fast across a small switching distance, we demonstrate a low-latency LM switch with 60 $muhbox{s}$ switch-on latency ( $sim$20 times better than other LM-switch technologies) and better than 5 $muhbox{s}$ signal rise/fall time, while boasting no contact bounce, as expected from an LM switch. High power-handling capability and long-term reliability are also discussed. $hfill$[2008-0135]      

Discharge-Based Pressure Sensors for High-Temperature Applications Using Three-Dimensional and Planar Microstructures

Two versions of microdischarge-based pressure sensors, which operate by measuring the change, with pressure, in the spatial current distribution of pulsed dc microdischarges, are reported. The inherently high temperatures of the ions and electrons in the microdischarges make these devices amenable to high-temperature operation. The first sensor type uses 3-D arrays of horizontal bulk metal electrodes embedded in quartz substrates with electrode diameters of 1–2 mm and 50–100-$muhbox{m}$ interelectrode spacing. These devices were operated in nitrogen over a range of 10–2000 torr, at temperatures as high as 1000 $^{circ}hbox{C}$. The maximum measured sensitivity was 5420 ppm/torr at the low end of the dynamic range and 500 ppm/torr at the high end, while the temperature coefficient of sensitivity ranged from $-$925 to $-$550 ppm/K. Sensors of the second type use planar electrodes and have active areas as small as 0.13 $hbox{mm}^{2}$. These devices, when tested in a chemical sensing system flowing helium as a carrier gas, had a maximum sensitivity of 9800 ppm/torr, a dynamic range of 25–200 torr, and a temperature coefficient of sensitivity of approximately $-$1412 ppm/K.$hfill$ [2008-0262]      

6H-SiC JFETs for 450 $^{circ}hbox{C}$ Differential Sensing Applications

N-channel 6H-SiC depletion-mode junction field-effect transistors (JFETs) have been fabricated, and characterized for use in high-temperature differential sensing. Electrical characteristics of the JFETs have been measured and are in good agreement with predictions of an abrupt-junction long-channel JFET model. The electrical characteristics were measured across a 2-in wafer for temperatures from 25 $^{ circ}hbox{C}$ to 450 $^{circ}hbox{C}$, and the extracted pinchoff voltage has a mean of 11.3 V and a standard deviation of about 1.0 V at room temperature, whereas pinchoff current has a mean of 0.41 mA with standard deviation of about 0.1 mA. The change in pinchoff voltage is minimal across the measured temperature range, whereas pinchoff current at 450 $^{circ}hbox{C}$ is about half its value at room temperature, consistent with the expected change in the $nmu_{n}$ product. The characterization of differential pairs and hybrid amplifiers constructed using these differential pairs is also reported. A three-stage amplifier with passive loads has a differential voltage gain of 50 dB, and a unity-gain frequency of 200 kHz at 450 $^{circ}hbox{C}$, limited by test parasitics. A two-stage amplifier with active loads has reduced sensitivity to off-chip parasitics and exhibits a differential voltage gain of 69 dB with a unity-gain frequency of 1.3 MHz at 450 $^{circ}hbox{C}$.$hfill$[2009-0029]      

Controlled Thermophoresis as an Actuation Mechanism for Noncantilevered MEMS Devices

A microelectromechanical system actuator based on thermophoretic, or Knudson, forces is proposed using analytical calculations. It can potentially execute scanning or spinning motions of a body that is not mechanically attached to the reference substrate. For a silicon device of 100-$muhbox{m}$ diameter, it is calculated that it can be levitated at a distance of about 0.5 $muhbox{m}$ from a substrate and that it can execute scanning motion and use quasi-springs by laterally acting thermal forces. In this way, an engine with spinning motion of a floating body having a diameter of 200 $muhbox{m}$ with up to 5 kHz can be achieved.$hfill$[2008-0013]      

Thermal Degradation of Electroplated Nickel Thermal Microactuators

In this paper, the thermal degradation of laterally operating thermal actuators made from electroplated nickel has been studied. The actuators investigated delivered a maximum displacement of ca. 20 $muhbox{m}$ at an average temperature of $sim!! 450 ,^{circ}hbox{C}$ , which is much lower than that of typical silicon-based microactuators. However, the magnitude of the displacement strongly depended on the frequency and voltage amplitude of the pulse signal applied. Back bending was observed at maximum temperatures as low as 240 $^{circ}hbox{C}$. Both forward and backward displacements increase as the applied power was increased up to a value of 60 mW; further increases led to reductions in the magnitudes of both displacements. Scanning electron microscopy clearly showed that the nickel beams began to deform and change their shape at this critical power level. Compressive stress is responsible for nickel pileup, while tensile stresses, generated upon removing the current, are responsible for necking at the hottest section of the hot arm of the device. Energy dispersive X-ray diffraction analysis also revealed the severe oxidation of Ni structure induced by Joule heating. The combination of plastic deformation and oxidation was responsible for the observed thermal degradation. Results indicate that nickel thermal microactuators should be operated below 200 $^{circ}hbox{C}$ to avoid thermal degradation.$hfill$[2009-0015]      

Real-Time Temperature Compensation of MEMS Oscillators Using an Integrated Micro-Oven and a Phase-Locked Loop

We present a new temperature compensation system for microresonator-based frequency references. It consists of a phase-locked loop (PLL) whose inputs are derived from two microresonators with different temperature coefficients of frequency. The resonators are suspended within an encapsulated cavity and are heated to a constant temperature by the PLL controller, thereby achieving active temperature compensation. We show repeated real-time measurements of three 1.2-MHz prototypes that achieve a frequency stability of $pm$ 1 ppm from $-20 ^{circ}hbox{C}$ to $+80 ^{circ}hbox{C}$, as well as a technique to reduce steady-state frequency errors to $pm$0.05 ppm using multipoint calibration.$hfill$[2009-0074]      

On the NP-Hardness of Checking Matrix Polytope Stability and Continuous-Time Switching Stability

Motivated by questions in robust control and switched linear dynamical systems, we consider the problem checking whether all convex combinations of $k$ matrices in $R^{n times n}$ are stable. In particular, we are interested whether there exist algorithms which can solve this problem in time polynomial in $n$ and $k$. We show that if $k= lceil n^{d} rceil $ for any fixed real $d>0$, then the problem is NP-hard, meaning that no polynomial-time algorithm in $n$ exists provided that $P ne NP$, a widely believed conjecture in computer science. On the other hand, when $k$ is a constant independent of $n$ , then it is known that the problem may be solved in polynomial time in $n$. Using these results and the method of measurable switching rules, we prove our main statement: verifying the absolute asymptotic stability of a continuous-time switched linear system with more than $n^{d}$ matrices $A_{i} in R^{n times n}$ satisfying $0 succeq A_{i} + A_{i}^{T}$ is NP-hard.      

$ {cal L}_{2}$ Gain of Periodic Linear Switched Systems: Fast Switching Behavior

We investigate the $ {cal L}_{2}$ gain of periodic linear switched systems under fast switching. For systems that possess a suitable notion of a time-average system, we characterize the relationship between the ${cal L}_{2}$ gain of the switched system and the ${cal L}_{2}$ gain of its induced time-average system when the switching rate is sufficiently fast. We show that the switched system ${cal L}_{2}$ gain is in general different from the average system ${cal L}_{2}$ gain if the input or output coefficient matrix switches. If only the state coefficient matrix switches, the input-output energy gain for a fixed ${cal L}_{2}$ input signal is bounded by the ${cal L}_{2}$ gain of the average system as the switching rate grows large. Additionally, for a fixed ${cal L}_{2}$ input, the maximum pointwise in time difference between the switched and average system outputs approaches zero as the switching rate grows.      

Millimeter-Scale Fuel Cell With Onboard Fuel and Passive Control System

We report microfabrication of a millimeter-scale fuel cell with onboard fuel and a passive control mechanism. This unique power source has a total volume of 9 $muhbox{L}break(3 times 3 times 1 hbox{mm}^{3})$, which makes it the smallest fully integrated fuel cell reported in the literature. The first generation of this device delivered an energy density of 254 $hbox{W} cdot hbox{h/L}$. The device uses a reaction between a metal hydride, $hbox{LiAlH}_{4}$, and water vapor to generate hydrogen in a reactor. The generated hydrogen exits the reactor through a nanoporous silicon wall to reach a hybrid silicon/Nafion membrane electrode assembly. A passive microfluidic control system regulates hydrogen generation through controlled delivery of water vapor to the metal hydride based on the reactor pressure. The development of this unique power source greatly benefits the portable electronics industry and enables future technologies that require significantly high energy density power sources such as cognitive arthropods (“thinking” insect-sized robots). This paper provides details of the device microfabrication processes, component integration, and performance analysis. $hfillhbox{[2008-0168]}$      

MEMS Vertical Probe Cards With Ultra Densely Arrayed Metal Probes for Wafer-Level IC Testing

We have developed a MEMS probe-card technology for wafer-level testing ICs with 1-D line-arrayed or 2-D area-arrayed dense pads layouts. With a novel metal MEMS fabrication technique, an area-arrayed tip matrix is realized with an ultradense tip pitch of $90 muhbox{m} times 196 mu hbox{m}$ for testing 2-D pad layout, and a 50-$muhbox{m}$ minimum pitch is also achieved in line-arrayed probe cards for testing line-on-center or line-on-perimeter wafers. By using the anisotropic etching properties of single-crystalline silicon, novel oblique concave cavities are formed as electroplating moulds for the area-arrayed microprobes. With the micromachined cavity moulds, the probes are firstly electroplated in a silicon wafer and further flip-chip packaged onto a low-temperature cofired ceramic board for signal feeding to an automatic testing equipment. The microprobes can be efficiently released using a silicon-loss technique with a lateral underneath etching. The measured material properties of the electroplated nickel and the Sn–Ag solder bump are promising for IC testing applications. Mechanical tests have verified that the microprobes can withstand a 65-mN probing force, while the tip displacement is 25 $muhbox{m}$, and can reliably work for more than 100 000 touchdowns. The electric test shows that the probe array can provide a low contact resistance of below 1 $Omega$, while the current leakage is only 150 pA at 3.3 V for adjacent probes.$hfill$[2008-0273]