周期性压电分流阵列板带隙特性研究

将带有分流电路的压电片周期性地粘贴到薄板表面形成二维压电分流阵列结构,该结构不仅具有声子晶体的带隙特性,还可以通过分流电路实现带隙调控。该文运用有限元法计算了二维压电分流阵列结构的带隙特性,研究了含有谐振单元及负电容的混合电路中不同电路参数对带隙的影响。此外,通过调节电感及负电容,可以将布喇格带隙和局域共振带隙进行耦合,拓宽带隙,实现宽频振动控制。     

多带隙声子晶体低频带隙特性研究

利用有限元法计算了一种多带隙声子晶体的特征频率,传递损失和位移矢量,理论推导了反共振产生条件。研究结果表明,这种声子晶体在低频范围内具有多条平直带隙,带隙的耦合影响因素少,具有比一般局域共振声子晶体和Bragg 散射声子晶体更宽的带隙。此外,利用原点反共振模型分析计算了这种多带隙声子晶体的材料和结构参数对带隙的影响。研究表明,在低于2 500 Hz时,多带隙声子晶体的带隙占90%以上,为低频多带隙声子晶体的研究作了探索。     

压电分流声子晶体杆带隙调控研究

压电型声子晶体具有弹性波带隙特性,可用于噪声与振动控制。该文通过在环氧树脂杆上周期地布置含有负电容的压电分流单元,构造了压电声子晶体杆结构。为拓宽带隙,对此结构设计了3种元胞配置,运用传递矩阵法计算其带隙特性,并采用遗传算法对分流电路参数进行优化。理论与仿真结果表明,改变元胞中不同谐振频率的压电分流单元的个数,可以获得多个局域共振带隙,增强带隙可调谐性;运用算法优化可得到带隙调谐时分流电路参数值的最佳匹配,实现多个带隙的合并进而形成宽带,在不改变原有结构的基础上拓宽带隙。     

负电容声子晶体带隙特性研究

外接负电容的声子晶体具有可调的等效弹性模量。通过改变外接负电容的电容值,可改变等效介质的弹性模量。该文理论计算了等效弹性模量,结合位移矢量分析了带隙的产生原因及其影响因素。研究表明,外接负电容声子晶体具有可调的低频带隙,带隙随着外接负电容的变化而变化。     

一维铝-环氧树脂声子晶体的介观压声效应

用传递矩阵法研究了由铝和环氧树脂两种材料构成了二组元一维声子晶体在应力作用下的透射谱特性。通过分析透射谱线的变化发现,在压变量的影响下,声波带隙能可控的出现和消失及平移,特别是会随着压变量的变化而出现带隙的反转,由通带变为禁带。为与体材料中的声弹性效应区别,参照介观压阻和介观压光效应的提法,称这种效应为介观压声效应。研究了在压变量存在下该结构透射谱线与声子晶体周期数的关系。结果表明,单轴应力对声子晶体带隙有明显的影响。这些特性可为新型声学器件的设计提供理论参考。     

含耦合弱界面的压电/压磁声子晶体带隙研究

将力 电 磁耦合的弱界面引入到压电/压磁声子晶体中,利用传递矩阵法和Bloch定理,研究了界面损伤和损伤耦合对第一带隙特性的影响。结果表明,第一带隙起始频率、终止频率随弱界面内的力学损伤增大而下降,独立发生的磁、电损伤不会影响第一带隙特性;当磁、电损伤与力学损伤耦合时,第一带隙起始频率、终止频率随耦合系数增大而下降,磁电损伤耦合系数不会对第一带隙产生影响。     

一维声子晶体在防止低频噪声中的应用

应用集中质量法研究了集中质量数n、晶格常数a、组分比t、弹性模量E及密度ρ等因素对一维声子晶体带隙的影响.结果表明,带隙起始频率及带宽随a增加而减小,随t增加而快速增大(当t>1);带隙起始频率随两种材料E差值与ρ差值增加而减小,而带隙截止频率却不变;带隙精度则随n增加而增大.据此设计出一种能屏蔽约59～557 Hz范围内低频噪声的复合结构声子晶体.     

矩形晶格结构对二维压电声子晶体带隙的影响

通过计算二维压电声子晶体透射系数,研究了矩形晶格结构对声子晶体带隙的影响。为得到声子晶体的透射系数,构建叉指换能器(IDT)中间放置声子晶体的器件模型,IDT作为激发和接收端,声子晶体作为传输通道。通过有限元软件计算出模型的电学参数,分别结合IDT的混合矩阵(P矩阵)和声子晶体的散射矩阵,推导和计算出声表面波的透射系数,并找出带隙范围。该文在128°-YX铌酸锂基片上制作IDT和矩形晶格以圆孔为散射体的声子晶体。通过调整矩形晶格中y方向上晶格常数,理论和实验上均得到了2个方向上的带隙变化。结果表明,随着y方向上晶格常数的增大,x方向上的带隙逐渐分为两段,y方向上的带隙逐渐缩小,使y方向上的带隙夹在x方向两段带隙间。实验结果与计算结果较吻合。     

声磁防盗系统的识别原理及应用

介绍电子商品防盗系统(EAS)的特点,阐述声磁防盗系统的特性和组成。根据磁致伸缩效应的可逆性,结合铁镍合金的磁致伸缩和磁机械耦合系数,围绕产生共振的三要素:材料、结构和磁场,解析声磁系统的识别原理。指出声磁标签的共振信号是一种声磁复合信号,以及谐振曲线是卓越性能的基础。     

Fe85Ga15合金的电子显微结构研究

磁致伸缩材料广泛应用于各种各样的传感器和伺服机构器件,Fe-Ga合金以其作为磁致伸缩材料的潜在应用前景已经引起研究人员的注意。Fe-Ga合金的磁致伸缩效应很强,归因于晶体中存在着Ga原子的不对称形状团簇,其导致的四方格子结构在Fe-Ga合金的磁致伸缩特性中起了关键的作用。     

中国微米纳米学会－微型压电振动发电机谐振频率调节技术的研究

具有高能量密度的微型压电振动发电机可以无限、持续地为无线传感器网络提供能量。为了适应环境振源频率的变化,提高压电振动发电机的能量转换效率,采用理论建模和数值分析的方法,研究了旁路电容调节振动发电机固有频率的关键技术。建立压电电容与压电层杨氏模量的力学模型,分析压电电容对压电发电机固有频率的影响规律,提出了单晶片和双晶片压电梁的电容频率调节配置方案;分别研究厚度比、长度和宽度对开路、闭路刚度比及固有频率比的影响特性,对结构参数进行了优化配置。     

十字型结构声子晶体带隙及等效模型研究

该文设计了一种新型十字型声子晶体结构,并采用有限元法对其进行了研究;分析了此结构若干共振频率下的振动模态,分别建立了带隙起始频率与截止频率处振动模态的简化模型,探究了结构与材料参数对带隙的影响,验证了简化模型的合理性;最后计算了结构的反射系数与透射系数。结果表明,该结构带隙产生机理属局域共振型,能够在中低频段内产生一个完全带隙。通过对金属芯体密度、基体密度、包覆层的宽度及弹性模量等因素的调节,可以实现对带隙上、下界频率的调节,结构的反射系数与透射系数随入射波频率的变化也与带隙图相应证,当带隙图显示出现带隙时,结构的透射系数也随之下降。     

L波段薄膜体声波谐振器纵波谐振频率计算

薄膜体声波谐振器(FBAR)电极层和压电层的厚度、材料是影响谐振频率的主要因素,确定各层的厚度和材料可得到期望的谐振频率。通过推导FBAR纵向运动应力方程,得到各层厚度、材料、频率参数与角频率相关的公式;采用MATLAB对FBAR各层应力和位移的边界、连续性条件方程组的行列式进行牛顿迭代,得到各层的频率参数。将确定的各层厚度、材料参数值及由牛顿迭代得到的频率参数值代入公式,可以得出谐振频率为1.453 8GHz。采用ADS对具有与公式计算相同厚度、材料的FBAR进行纵向振动Mason模型等效电路仿真,得到仿真模型的谐振频率为1.463GHz。仿真验证结果表明,谐振频率公式计算值和模型仿真值较近,可采用频率公式计算L波段FBAR纵波谐振频率。     

Design considerations for high-frequency crystal oscillators

The deleterious effects of crystal shunt capacitance and series resistance on the performance of series-mode oscillators are discussed. When the parasitic capacitance across the crystal significantly modifies the transconductance of the amplifying stage the circuits can become susceptible to a parasitic second mode of oscillation above the series-resonance frequency of the crystal. A simple model that can sufficiently describe such crystal oscillator circuits was developed and used to derive simple design equations that can accurately predict the behavior of these circuits. The design equations should be especially useful for a reliable design in cases when it is not practical to use an additional inductor to compensate for the parasitic shunt capacitance of the crystal. It is shown theoretically that the inclusion of this capacitance in the feedback path reduces the total effective capacitance in the tank circuit, which is tuned to the desired overtone frequency. This creates a second mode of oscillation frequency which is higher than the desired crystal resonance frequency. The ranges of loop-gain and tank resistance values that can prevent this parasitic mode of oscillations are derived. It is also shown that the useful loop gain for the desired oscillations to start is restricted to a similar region by the crystal shunt capacitance and series resistance     

Realistic equivalent circuit model of coplanar waveguide opencircuit: lossy shunt resonator network

Realistic equivalent circuit model of coplanar waveguide (CPW) open circuit is proposed and formulated as a lossy shunt resonator network based on the fact that the electromagnetic (EM) wave propagates at the transverse direction around the open-end. A "short-open calibration" (SOC) technique is applied in the full-wave method of moments (MoM) to effectively extract all the model parameters over a wide frequency range. After the extracted capacitance at low frequency is confirmed by the previous static results, extensive investigation is implemented to reveal the high-frequency dynamic features of CPW open circuit, e.g., shunt resonance and radiation loss. A CPW open-end circuit is then fabricated and measured to provide an experimental verification of the proposed model     

General Treatment of Klystron Resonant Cavities

Klystron resonant cavities are treated for general cases and their equivalent circuits are theoretically determined, which allows a fairly accurate estimate of resonant properties. It is shown that a reentrant cavity is expressed as a low-frequency series LCR/sub se/ circuit or a shunt LCR/sub sh/ circuit, taking L as the inductance of a toroidal coil with one turn and with a cross section the same as the cavity, C as the gap capacitance plus the equivalent capacitance of the cavity, and R/sub se/ or R/sub sh/ as the equivalent series or shunt resistance of the cavity at resonance. The introduction of the equivalent cavity capacitance has proved to be very effective. The formulas derived here enable one to calculate the resonant frequency within an error of a few per cent and the shunt resistance and the Q within an error of several tenths of a per cent in most cases, and thus should prove to be very useful to the designer of microwave circuits.     

Simulations of ion dynamics in induction linacs with advanced gapcircuit models

The author describes computer simulations of a coasting beam in a periodic multigap accelerator. One advance from previous work is the introduction of shunt capacitance to the gap circuit model. The simulations show that capacitance can stabilize microscopic bunching instabilities. The results give a simple criterion for the value of shunt capacitance to give reduced growth or complete stabilization. A second approach studied for the stabilization of bunching instabilities is the introduction of a coherent energy shift between the beams of a multiple-beam HIF (heavy-ion fusion) transport system. This shift can simulate a broad energy distribution. The simulations show that this approach is successful as long as there is sufficient overlap between the beams in velocity space