光纤光敏性的研究

研究和分析了用于制作光纤光栅的掺锗石英光纤的紫外光致折射率变化规律。在实验中利用248nm的脉冲准分子激光，对标准单模通信光纤，在不同曝光时间下进行紫外曝光，然后测量它们的径向折射率分布。实验结果表明：紫外光照射光纤的初始阶段，纤芯折射率直线上升，可用色心理论解释；紫外曝光的中间阶段，温度擦除效应对折射率变化的阻碍作用与色心形成改变折射率的作用相互竞争，折射率变化曲线出现起伏；实验的最后阶段，折射率变化再次呈上升趋势，可用紧缩／致密模型解释。光纤经过紫外光照射后折射率变化在10^-4数量级；曝光时间与光致折射率改变之闻存在非线性关系，并伴有饱和现象发生，样品的紫外光敏性、光致折射率的改变与紫外辐射时间有很大关系。     

微结构光纤表面等离子体共振传感器研究

采用有限元法模拟微结构光纤表面等离子体共振传感器.计算其共振波长和强度,为证实表面等离子体共振的产生,对比不同位置处传导模的分布.环形大孔中液体样品的折射率提高后,共振波长向长波移动,且共振峰值强度增大.该微结构光纤表面等离子体传感器对折射率变化的灵敏度达到10-4.     

石墨烯增敏的光纤表面等离子共振传感器优化设计

基于多层膜矩阵理论,系统研究了包层半径、镀层厚度、石墨烯层数和外界环境折射率多个结构设计参数对光纤表面等离子共振光谱特性的影响机制。模拟结果证明:石墨烯层确实能增强折射率传感灵敏度,且置于多模光纤和金膜之间效果更好;随着石墨烯层数的增加,共振波长右移;在其它相关参数限定后,光纤包层半径越小,折射率传感灵敏度越高;随着金膜厚度增大,共振波长增大,透射光强反而减小;外界环境折射率增大,共振谱中心波长线性右漂,光强增强。     

渐变型波导模方程的计算方法

本文对渐变型波导的模方程,进行严格的推导,得到解析表达式,从而给出了数值求解的方法。用结果可以直接计算出膜层的厚度,有效折射率值,表面折射率及折射率的最大差值。     

紫外线照射对纯钛表面氧化膜光学特性的影响

纯钛在空气中和氧化或中性水溶液中能迅速生成一层稳定的氧化性保护膜,而具有优良耐腐蚀性能.采用椭偏仪研究了纯钛在大气中的氧化吸附行为以及紫外线照射对纯钛表面氧化膜光学特性的影响,结果表明:纯钛表面氧化吸附层厚度随着在大气中放置时间的延长而增加,tanΨ和cos△随膜层厚度增加而增大,而总折射率和总消光系数随膜层厚度增加而减小.紫外线照射2 h可以完全去除钛氧化膜表面所吸附的碳水化合物,起初tanΨ和cos△随着照射时间的延长而减小,总折射率和总消光系数随着照射时间的延长而增大,在2 h内并分别达到最小值和最大值.随着紫外线照射时间的进一步延长,tanΨ和cos△基本保持不变,而总折射率和总消光系数略有所降低.     

基于显微数字全息的生物薄膜折射率的测量

提出了一种基于显微数字全息相位重构图像的生物薄膜折射率的简便测量方法。利用角谱法对生物薄膜的显微数字全息图像进行重构,得到其复振幅分布,从中获得激光通过生物薄膜后的相位变化与薄膜厚度、薄膜中液体的折射率及薄膜折射率间的定量关系。通过等厚干涉和阿贝折射仪测得膜的厚度与液体的折射率,再从定量的相位变化中获得生物薄膜的折射率。以洋葱内表皮细胞层折射率的测量为例,进行了相应的实验验证,得到了波长为632.8nm下的折射率。理论与实验均表明,该方法是有效和切实可行的。     

椭偏参数测量误差对薄膜参数测试精度的影响

为了分析透明均匀介质膜的椭偏方程中所隐含的椭偏参数和薄膜参数（膜厚、折射率）之间的误差关系,提出基于误差传递公式和反函数组定理,通过求出椭偏参数对薄膜参数的偏导在名义膜厚和名义折射率处的值来反求后者对前者的偏导值,进而绘出不同入射角下膜厚和折射率误差与椭偏参数测量误差之间的关系曲线的方法.该法所得结果表明,椭偏参数测量误差导致的膜厚误差和折射率误差并非在同一入射角下达到最小;它们最小时所分别对应的最佳入射角随着入射光波长、薄膜名义膜厚、名义折射率和基片折射率变化而变化;若以各自最佳入射角时所对应测得的膜厚和折射率作为薄膜参数测试值,则能有效提高测量精度.该结论与在激光椭偏仪上的实际测量结果相符.文中方法对分析其他超越方程中多个变量之间的误差关系以及各变量值的优化选取有一定参考价值.     

Ar等离子体对聚四氟乙烯膜的表面改性

聚四氟乙烯（町FE）膜经Ar等离子体预处理,与空气接触氧化后再接枝丙烯酸（AA）可改善其表面亲水性．通过接枝率的测定,考察了不同等离子体处理条件和接枝反应条件对膜表面接枝率的影响,并通过接触角的测定分析了PTFE膜表面亲水性的变化．结果表明,胛FE膜在放电功率为100W、放电时间为100s、Ar气体流量为20cm^3／min和接枝反应温度为60％、时间为6h、丙烯酸浓度10％的条件下,接枝率为10．565μg／cm^2,接枝效果最佳．门FE膜改性后接触角由110°降至60°左右,亲水性得到了大幅提高．     

大视场角1/4对称膜系偏光分束镜的研究

为了增大薄膜偏光分束镜(PBS)的视场角,从对称膜系等效折射率公式和截止带理论出发,设计了对称膜系结构的大视场角PBS。利用电子枪蒸镀法制备了低高低折射率(LHL)膜系结构的PBS,利用UV3101-PC分光光度计测量了PBS在不同入射角下的透射分光光谱,通过消光比测试系统测量了PBS反射光和透射光的消光比。结果表明,偏光分光光谱随入射角变化不明显,在视场角范围内具有较好的消光比(10-3量级),实验结果与理论设计一致。由此可见,利用周期性对称膜系设计大视场角薄膜PBS是完全可行的,为研制大视场角薄膜PBS提供了新的设计方法。     

管式间接蒸发冷却器管外亲水膜的实验研究

针对管式间接蒸发冷却系统中对换热管性能的要求,研发并制备了铝箔表面亲水膜,测定了该亲水膜的亲水性、持续亲水性,并据此探讨涂膜的亲水机理.实验结果表明,该亲水膜的亲水效果较好,水在表面的接触角小于10°;同时该膜有较好的耐水性能,在经过10个干湿循环后,水在表面的接触角仍然小于20;°加入表面活性剂后,涂膜的亲水性有明显改善;采用涂层法将该溶液整理在铝箔试样表面可以形成均匀且坚固的亲水膜,初期亲水性和持续亲水性都较好.     

离子束辅助沉积非晶硅薄膜红外光学特性研究

为了得到非晶硅（a-Si）薄膜红外光学常数与工艺参数之间的关系,采用Ar离子束辅助电子束热蒸发技术制备a-Si薄膜,并利用椭偏仪和分光光度计测量了薄膜的光学常数,分析了薄膜沉积速率、基底温度和工作真空度对a-Si薄膜折射率和消光系数的影响.实验结果表明：影响a-Si薄膜光学常数的主要工艺因素是沉积速率和基底温度,工作真空度的影响最小.当沉积速率和基底温度升高时,薄膜的折射率先增大后减小;当工作真空度升高时,薄膜的折射率增大.在波长1~5μm之间,a-Si薄膜的折射率变化范围为2.47~3.28.     

Effect of Accelerated Xenon Lamp Aging on the Mechanical Properties and Structure of Thermoplastic Polyurethane for Stratospheric Airship Envelope

This study aimed to investigate the effect of artificial weathering test on the photoaging behavior of TPU films. Changes in mechanical properties, morphology and chemical structures are studied by tensile test, scanning electron microscopy, atomic force microscopy, Fourier-transformed infrared, and X-ray photoelectron spectroscopy. The results show that the photoaging negatively affects the initial modulus and stress at break values of TPU films. The surface of the specimen that is exposed to irradiation becomes rough, and some visible micro-defects such as blisters and voids can be detected. The morphology of the fracture surfaces illustrates that irradiation reduces the plasticity but increases the brittleness of the TPU films. The chemical structure analyses of the accelerated aged films prove that chemical structural changes in TPU films occur. The irradiation may break the long molecular chains on the surface of the specimens and form the lowmolecular weight oxygen-containing groups. The number of chain scissions increases with the increase in exposure time.     

多种因素对TiO_2薄膜折射率的影响

用电子束蒸发法制备TiO2薄膜,详细研究了工艺参数和热处理对TiO2薄膜折射率的影响。得到镀制高折射率的氧化钛薄膜最佳工艺参数:基片温度200℃、真空度2×10-2Pa、沉积速率0.2nm/s。热处理可以提高TiO2薄膜折射率。     

Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor deposition (PECVD) at different silane temperatures (Tg) before glow-discharge. The effect of Tg on the amorphous network and optoelectronic properties of the films has been investigated by Raman scattering spectra, ellipsometric transmittance spectra, and dark conductivity measurement, respectively. The results show that the increase in Tg leads to an improved ordering of amorphous network on the short and intermediate scales and an increase of both refractive index and absorption coefficient in a-Si:H thin films. It is indicated that the dark conductivity increases by two orders of magnitude when Tg is raised from room temperature (RT) to 433 K. The continuous ordering of amorphous network of a-Si:H thin films deposited at a higher Tg is the main cause for the increase of dark conductivity.     

太阳电池用α-SiCx：H薄膜热处理性能研究

对不同温度下PECVD沉积的α-SiCx：H薄膜进行750℃、30s的快速热处理性能研究,并利用紫外一可见一近红外分光光谱仪、光学膜厚测试仪和微波光电子衰减仪对样品反射率、折射率和少子寿命进行表征。结果表明,快速热处理会使α-SiCx：H薄膜折射率升高,但对薄膜反射率的影响不大。较低温度（〈300℃）沉积的薄膜在快速热处理之后钝化效果提升,较高温度（≥300℃）沉积的薄膜在快速热处理之后钝化效果有所下降。     

Optical Properties and Microstructure of Ta2O5 Thin Films Prepared by Ion Assisted Electron Beam Evaporation

An effective method for determining the refractive index of weak absorption transparent thin films was presented, which is also applicable to other weak absorption dielectric thin films.The as-deposited Ta2O5 thin films prepared by ion assisted electron beam evaporation showed a maxima transmittance as high as 93% which was close to that of the bare substrate, and exhibited a blue shift when the substrate temperature increased from room temperature to 250 ℃. The refractive index seemed to be immune to the substrate temperature and film thickness with its value about 2.14 at incidence wavelength of 550 nm. The surface morphology measured by atomic force microscopy (AFM) revealed that the microstructures lead to the slim optical difference, which was the interplay of substrate temperature and assisted ion beam.     

Optical and electrical properties of hydrogenated silicon oxide thin films deposited by PECVD

In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H2, and PHy The deposition rate, refractive index, band gap, crystalline volume fraction, and conductivity of the silicon oxide thin films were determined and analyzed. The film with refractive index of 1.99, band gap of 2.6eV and conductivity of 10-7 S/cm was obtained, which was suitable for the intermediate reflector layer.     

Optical properties and microstructure of Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> thin films prepared by ion assisted electron beam evaporation

An effective method for determining the refractive index of weak absorption transparent thin films was presented, which is also applicable to other weak absorption dielectric thin films. The as-deposited Ta2O5 thin films prepared by ion assisted electron beam evaporation showed a maxima transmittance as high as 93% which was close to that of the bare substrate, and exhibited a blue shift when the substrate temperature increased from room temperature to 250 ℃. The refractive index seemed to be immune to the substrate temperature and film thickness with its value about 2.14 at incidence wavelength of 55（1 nm. The surface morphology measured by atomic force microscopy （AFM） revealed that the microstructures lead to the slim optical difference, which was the interplay of substrate temperature and assisted ion beam.     

气体压强对n型a-Si:H薄膜光学性能的影响

用射频等离子增强化学气相沉积(RF-PECVD)制备磷掺杂氢化非晶硅(a-Si:H)薄膜,研究了辉光放电气体压强(20~80 Pa)对薄膜折射率、消光系数、光学带隙以及氢含量的影响;用激光拉曼光谱研究了气体压强对a-Si:H薄膜微结构的影响,并与薄膜的光学性能进行了综合讨论。结果表明,随着辉光放电气体压强的增加,a-Si:H薄膜的光学带隙和氢含量都有不同程度的增大,但折射率和消光系数却逐步减小;与此同时,薄膜内非晶网络的短程和中程有序程度逐渐恶化。