V波段变容管三倍频器

设计制作了一个从22.8GHz到68.4GHz的封装型变容管三倍频器,这是目前报导的用封装型变容管所达到的最高频率。该倍频器在结构上实现了空闲回路独立可调,从而提高了倍频效率。当频率为22.8GHz而输入功率为47mW时,最大三次谐波输出为4.9mW,最大倍频效率为10.4％,输出频率至少在2GHz的范围内倍频效率不低于7％。     

基于石英基片的二毫米频段三倍频器的研制

介绍了一个基于石英基片的二毫米频段三倍频器.采用反向并联变容二极管对结构实现倍频.建立了该二极管管对的等效电路模型并提取了模型参数.设计实现的倍频器输入为K型接头结构,输出为WR-8波导结构.获得的倍频器在输出频率为112.8～118.2 GHz范围内,输出功率大于0 dBm,最大输出功率超过2 dBm,最小倍频损耗为...     

变容管宽带倍频器设计

本文着重分析变容管宽带倍频器的电路模型和实现宽带倍频条件;讨论了这种倍频器的工程设计方法;介绍倍频效率为65％,带宽为25％的二千兆赫变容管宽带二倍频器的设计参数、电路结构及性能曲线。     

Q频段变容二极管二倍频器设计

采用商用变容二极管MA46H146设计了一款Q频段串联单管二倍频器。通过拟合该变容二极管的电容-电压曲线以补充该二极管技术资料中不完整的模型参数。针对宽带倍频的设计目的,该变容二极管的输入匹配网络采用高低阻抗线低通滤波器与相移传输线实现,输出匹配网络由低插入损耗带通滤波器及相移传输线实现。测试结果与仿真结果吻合,该二倍频器在输入功率为14.5dBm,变容管偏置电压1.2 V时,43～49GHz频段内倍频效率大于12.6%,最高效率34.7%。     

超宽带微波倍频器

文章介绍一种实用的超宽带微波倍频器。它利用四只变容管构成桥路,从电路原理上实现对奇次谐波的抑制,并利用输入输出巴伦的宽带匹配性能,实现二次宽带倍频。倍频带宽可达一个倍频程以上(输入频率为2～9GHz,输出频率为4～18GHz)。并给出了理论分析和实验结果。     

连续波输出功率111.27 mW的G波段四端口平衡式倍频器

利用新颖的四端口平衡式二倍频原型,开发了215~230 GHz 频段的肖特基变容管倍频器,并具备更加优秀的变频效率和功率容量。同时,所提出的倍频架构能够实现奇次谐波和四次谐波的本征抑制,并且其中采用的二极管管结数量相对于传统平衡倍频结构提升了两倍。因此,这种四端口倍频电路可以实现更好的转换效率和双倍的功率处理能力。在室温下,当输入功率为196 ~ 340 mW 时,该倍频器具有约39.5% 的峰值转换效率（@218 GHz） ,即使在较高的频率下,该倍频器也被证明是高功率太赫兹波信号产生的理想解决方案。     

基于肖特基阻性二极管的140 GHz二倍频器

介绍了一种基于肖特基阻性Z-极管的140GHzZ-倍频器,该倍频器采用矩形波导内嵌石英基片微带电路,通过四肖特基结正向并联结构提高驱动功率承受能力。倍频设计中应用了自建精确二极管三维电磁模型、宽带电磁耦合结构和宽带阻抗匹配结构,以提高仿真结果和实际器件的吻合度。测试结果表明：在频率为65GHz一75GHz,功率为20dBm的驱动信号激励下,二倍频器输出频率为130GHz～150GHz,输出功率为3．3dBm～8．0dBm,倍频损耗为11．7dB～16．3dB。在23dBm-24dBm的最大驱动功率激励下,倍频器最大输出功率达11．2dBm／136GHz,基本达到了成像雷达的应用性能指标。     

170 GHz高功率二倍频器设计及工艺优化

基于国产肖特基变容二极管,设计了一种170 GHz高功率二倍频器。为了提高肖特基二极管的散热效率,微带基板选用高热导率的氮化铝材料,基片粘接选用一种高热导率的导电银胶。通过实测数据可知,倍频器在171～189 GHz频段内的倍频效率大于10%。当输入功率为100～200 mW时,具有最大倍频效率20.5%;当输入功率为500～1 000 mW时,具有最大输出功率91 mW。     

一种超宽带毫米波倍频器设计

叙述了一种超宽带毫米波倍频器的设计,该倍频器由有源差分balun级、对管倍频级和分布式功率放大级三个部分组成。在30—50GHz输出频率范围内,倍频器具有5dB的变频增益,输出功率大于13dBm,基波抑制大于15dB。     

微波PIN二极管倍频器研究

用理想的开关模型对反向并联PIN二极管对的输出频谱和倍频损耗进行分析,与混频二极管倍频器和变容二极管倍频器进行了比较,分析了PIN二极管的倍频机理。对微波PIN二极管倍频器进行了实验研究,得出了有益的结论。研制的S波段和C波段五倍频器倍频损耗分别达到15.4 dB和10.6 dB,而S波段的倍频源相位噪声达到—136 dBc/Hz@10 kHz,具有低噪声性能。     

W-band finite ground coplanar monolithic multipliers

This paper describes the design, fabrication, and experimental evaluation of W-band planar monolithic varactor frequency multipliers based on finite ground coplanar (FGC) lines. These lines are a low-loss low-dispersion alternative of a planar transmission line to more conventional microstrip of coplanar waveguide lines at millimeter-wave frequencies. The near transverse-electromagnetic nature of propagation of the FGC lines simplifies circuit design and layout. Two-diode W-band varactor multipliers with input Q's of two and three and FGC input and output have been realized. The multiplier with input Q=2 has an output power of 72 mW, an efficiency of 16.3% near 80 GHz, and a -3-dB bandwidth greater than 10 GHz, while the multiplier with Q=3 has an efficiency of 21.5% near 70 GHz and a 6-GHz bandwidth. This paper briefly describes the characteristics of the FGC lines, the design of the multipliers and their radiofrequency performance     

Frequency multipliers for millimeter and submillimeter wavelengths

Theory and tools for analysis and design of millimeter- and submillimeter-wave multipliers are discussed. Experimental work is reviewed. The Schottky diode model at submillimeter frequencies, use of Schottky multiplier chains versus direct higher-order multipliers, and the effect of cooling on Schottky diode multipliers are discussed. Alternative diodes such as the high electron mobility varactor (HEMV), the barrier-intrinsic-n⁺ diode (BIN), the barrier-n-n⁺ diode (BNN), the quantum well diode (QWD), and the single barrier varactor (SBV) are discussed, with attention given to their potential submillimeter frequency multipliers     

Analysis of Varactor Frequency Multipliers: Nonlinear Behavior and Hysteresis Phenomena

A nonlinear analysis of varactor frequency multipliers has been performed and numerically implemented to obtain the quantities that must be specified to define the quality of a multiplier used to generate high spectral purity signals for metrological purposes. The theoretical model has proved adequate to predict the existence of complicated hysteresis phenomena, confirmed by experimental investigation. The practical cases examined refer to abrupt-junction doublers and triplers operating in self-bias conditions. The circuit parameters have been determined for maximum efficiency at a given generator available power. Then, some effects of input power, frequency, and tuning variations have been investigated, and calculated curves including hysteresis cycles are shown. Beside the optimization of the multiplier operation, the equations given are sufficiently general to yield the information requested on multipliers of this kind, where the power handling capabilities of the varactor are not fully exploited but the high spectral purity of the input signals must be preserved. As an example, one of the most important features of the frequency multiplier, i.e., the AM-PM conversion, was determined in a practical case for varying input power levels.     

Spurious Signal Response of Broadband Solid–State Frequency Multipliers at Millimeter and Submillimeter Wavelengths

Heterodyne instruments at millimeter and submillimeter wavelengths often use wideband fixed-tuned frequency multipliers, in conjunction with broadband power amplifiers driven by frequency synthesizers, as the local oscillator (LO) source. At these frequencies the multipliers use Gallium Arsenide (GaAs) based Schottky varactor diodes as the nonlinear element, and like most other harmonic generators are susceptible to spurious signal interference. The state-of-the-art LO sources at these wavelengths use high power MMIC amplifiers at the initial stages, and are used to drive the subsequent multiplier stages to have enough LO power to pump the mixers. Because of the high input power environment and the presence of noise in the system, the multipliers become vulnerable to spurious signal interference. As the spurious signals propagate through the receiver system, they generate inter-modulation products which might fall in the passband of the heterodyne instrument and seriously degrade its performance. In this paper spurious signal response of solid-state frequency multipliers at millimeter and submillimeter wavelengths is investigated. Results of numerical harmonic balance simulations and laboratory experiments, which were found to show good agreement, are presented here.     

Maximization of the output power in resonant frequency multipliers with ideal abrupt junction diodes

A general procedure is described to maximize the output power from a lossless abrupt-junction multi-idler varactor multiplier under resonant conditions. The approach is illustrated by several examples. It forms the basis of an iterative technique for optimizing the design of multipliers having lossy and nonabrupt junction varactors.     

Understanding Soliton Wave Propagation in Nonlinear Transmission Lines for Millimeter Wave Multiplication

In this paper, soliton propagation in nonlinear transmission lines (NLTLs) periodically loaded with symmetric voltage dependent capacitances is studied. From the lumped element equivalent circuit of the line we have analyzed the influence of nonlinear shunt reactances on soliton propagation characteristics. It is shown that by increasing the non linearity of the C–V characteristic, a faster separation of input signal into solitons is achieved. The fact that frequency multiplication in NLTLs is governed by soliton formation makes the results of this work relevant to understand the influence of nonlinear loading devices on multiplier performance. Since a heterostructure barrier varactor (HBV)-like voltage dependent capacitance has been considered for the nonlinear devices, this study can be of interest for the design of millimeter wave frequency multipliers loaded with HBVs.     

Millimeter wave monolithic high electron mobility (HEM) varactor diode-grid frequency tripler arrays

High Electron Mobility (HEM) varactor structures have been studied for millimeter-wave monolithic diode-grid frequency tripler array applications. The improved HEM varactor diode structures provide a highly nonlinear C-V characteristic (i.e., a steep slope of the C-V curve and a large capacitance ratio) which produces high harmonic generation efficiency and reduce the power requirement for efficiently pumping each device. The effects of the light illumination on the C-V characteristics of the Barrier-Intrinsic-N⁺ (BIN) varactor diode have also been studied and the results will be discussed in this paper. In the development of a monolithic diode-grid frequency multiplier array, the low-loss quasioptical configuration is used for the construction of the multiplier circuit. The study of the effects of the light illumination on the C-V characteristics of varactor diode is important in understanding the potential applications of the quasi-optical varactor diode-grid frequency multiplier array circuit.     

基于平面肖特基二极管的太赫兹频段倍频器的研究

基于研究肖特基变容二极管的半导体层结构分析与建模,通过研究太赫兹平面肖特基势全二极管半导体材料的 物理层结构,分析二极管结构的电磁效应及其频率响应特性。研究D 频段变容二极管高效率倍频器技术,在太赫兹频段 倍频器的性能对整个接收机的性能有着至关重要的影响。要实现高频率,高功率,宽频带,高效率,低噪声太赫兹倍频 技术是太赫兹技术领域的核心研究方向之一。研究基肖特基二极管倍频器的关键技术,分析了国内外现状及发展动态。     

New equivalent circuit of the p-n junction in the frequency-multiplying mode

The letter describes an equivalent circuit of a p-n junction in the frequency-multiplying mode, and gives equations for the current flowing through the junction when the stored charge effect is involved. By using these equations, it is possible to design a frequency multiplier even with the varactor exhibiting 'punch-through' behaviour.