纳米Ag夹层ZnO薄膜的光电性能

用射频磁控溅射ZnO陶瓷靶、直流磁控溅射Ag靶的方法在室温下制备了Ag纳米夹层结构ZnO薄膜．用X射线衍射仪、紫外一可见分光光度计、四探针电阻测量仪和原子力显微镜对薄膜样品的结构、光学透过率、面电阻和表面形貌进行表征．结果表明,ZnO衬底有利于Ag夹层形成连续膜．随着Ag层厚度的增加,Ag夹层ZnO薄膜呈现多晶结构,Ag（111）衍射峰强度增强,面电阻先迅速下降后缓慢下降．随着ZnO膜厚度的增加,Ag夹层ZnO薄膜的透射峰红移．制得样品的最佳可见光透过率高达92．3％,面电阻小于4．2Ω／□．     

层数变化对ZnO/In_2O_3多层膜微观结构及光电性能的影响

用直流磁控溅射和热氧化法在玻璃衬底上制备ZnO/In2O3透明导电多层膜,当总厚度一定时,调节溅射沉积的层数与相应各层膜的厚度,研究该多层膜微观结构、光学性能和电学性能的变化.XRD和SEM分析表明:随着溅射沉积层数的增加,In2O3衍射峰的强度不断地减弱,ZnO衍射峰出现了不同的晶面择优取向;多层膜表面的ZnO晶粒粒径变小,光洁度增加.四探针法方块电阻测试表明:低温热氧化时,ZnO/In2O3多层膜的方块电阻随层数的增加而上升;高温氧化时,ZnO/In2O3多层膜的方块电阻随层数的增加而下降.可见光光谱分析表明:随着溅射沉积层数的增加,ZnO/In2O3多薄膜在可见光区的平均透过率增大,透过率的峰值向短波方向偏移.     

可调的透明导电膜研究进展

简述了透明导电薄膜材料,特别是对目前研究比较活跃的透明导电氧化物（TCO）及金属基复合透明导电多层膜的发展现状和趋势;同时从选材、膜层设计、制备方法到工艺制定,研究透明导电膜光电性能诸多影响因素和规律,探讨D／M／D多层膜的微观结构与其光电性能的内在联系,以及多层膜的热稳定性和界面反应等问题,并采用电介质TiO2与金属Ag交替生成TiO2／Ag／TiO2三明治结构制备了几种具有优异光电性能的透明导电膜。经优化设计的纳米多层膜具有奇特的光电性能可调性,根据需要,用于平面显示器透明电极、太阳能电池板等的在可见光区具有高的透过率（T550≥90％）和在红外光区高的反射率（R2500≥90％）,其方块电阻仅为～5Ω／sq;而用于紫外固化的则在紫外固化的主峰365 nm处具有高的透射率（T365≥80％）,而在1600 nm的红外波段反射率也超过了90％。     

Ag层厚度对NiCo/Ag多层膜的微结构及磁学性能的影响

采用磁控溅射方法制备了不同Ag层厚度的NiCo/Ag多层膜,研究了Ag层厚度对NiCo/Ag多层膜微结构及其磁学性能的影响.研究结果表明,NiCo/Ag多层膜中NiCo层在FCC的Ag层上准外延生长,为亚稳结构相.该多层膜的晶粒尺寸明显地随着Ag层厚度增加而增大,当Ag层厚度为1.0nm时,多层膜是由约为5 nm纳米晶所组成;当Ag层厚度增加到3.6nm时,多层膜的晶粒尺寸增大到50nm左右.将NiCo层厚度固定为1.8 nm时,Ag层厚度的变化对NiCo/Ag多层膜的磁学性能有很强的影响,当Ag层厚度为1.0 nm时,其易磁化轴倾向垂直于膜面;当Ag层厚度达到2.0 nm时,易磁化轴平行于膜面;当Ag层厚度增厚至3.0 nm以上,多层膜表现出超顺磁特性.     

可调的透明导电膜研究进展

简述了透明导电薄膜材料，特别是对目前研究比较活跃的透明导电氧化物（TCO）及金属基复合透明导电多层膜的发展现况和趋势：同时从选材、膜层设计、制备方法到工艺制定，研究透明导电膜光电性能诸多影响因素和规律，探讨D／M／D多层膜的微观结构与其光电性能的内在联系，以及多层膜的热稳定性和界面反应等问题，并采用电介质TiO2与金属Ag交替生成TiO2／Ag／TiO2三明治结构制备了几种具有优异光电性能的透明导电膜。经优化设计的纳米多层膜具有奇特的光电性能可调性，根据需要，用于平面显示器透明电极，太阳能电池板等的在可见光区具有高的透过率（T550≥90％）和在红外光区高的反射率（R2500≥90％），其方块电阻仅为5Ω／sq；而用于紫外固化的则在紫外固化的主峰365nm处具有高的透射率（T365≥80％），而在1600nm的红外波段反射率也超过了90％。     

ZnO/SiC/Si异质结构的特性

用MOCVD方法在p型单晶Si（100）基片上外延SiC层,再用直流溅射在SiC层上生长ZnO薄膜,制备出ZnO／SiC／Si异质结构,用XRD和AFM分析了ZnO／SiC／Si和ZnO／Si异质结构中表层ZnO的结构和形貌的差别,研究了这种异质结构的特性．结果表明,在Si（100）基片上外延生长出的是高取向、高结晶质量的SiC（100）层．这个SiC层缓冲层使在Si基片上外延生长出了高质量ZnO薄膜,因为ZnO与SiC的晶格失配比ZnO与Si的晶格失配更低．     

ZnO:Sn/Ag/ZnO:Sn复合薄膜电极的防氧化性能研究

随着分辨率的提高,传统金属电极在电阻率和抗氧化性能方面已经不适合作为需要高温热处理的场致发射显示器件中的薄膜电极。本文采用5.77%(原子比)Sn掺杂的ZnO:Sn作为Ag层的保护层,利用磁控溅射法制备ZnO:Sn/Ag/ZnO:Sn复合薄膜及其电极,并采用X射线衍射、光学显微镜、扫描电子显微镜和电性能测试系统研究复合薄膜及其电极在经过不同温度退火后的晶体结构、表面形貌和电学性能的变化。ZnO:Sn膜层致密,25 nm厚的ZnO:Sn足以保护Ag层在530℃的高温中不被明显氧化,电极电阻率低达2.0×10-8Ω.m左右。     

掺杂Al2O3纳米粉对ZnO厚膜气敏传感器性能的影响

以ZnO纳米粉(平均粒径30 nm)和Al2O3纳米粉(平均粒径5 nm)为原料,利用传统的厚膜气敏传感器制备工艺制备了纯ZnO厚膜气敏传感器和掺杂Al2O3(掺杂量为2wt%和5wt%)的ZnO厚膜气敏传感器.对这三种厚膜传感器的本征电阻及对乙醇蒸汽的敏感特性进行了测试.结果表明:掺杂少量Al2O3纳米粉可明显降低ZnO气敏传感器的本征电阻,改善传感器的烧结性能,同时还可降低其最佳工作温度,提高器件对乙醇的灵敏度.结合厚膜气敏传感器的显微结构分析结果,对出现上述差异的原因进行了讨论.     

ZnO∶Sn/Ag/ZnO∶Sn复合薄膜电极的防氧化性能研究

随着分辨率的提高,传统金属电极在电阻率和抗氧化性能方面已经不适合作为需要高温热处理的场致发射显示器件中的薄膜电极.本文采用5.77%(原子比)Sn掺杂的ZnO∶Sn作为Ag层的保护层,利用磁控溅射法制备ZnO∶Sn/Ag/ZnO∶Sn复合薄膜及其电极,并采用X射线衍射、光学显微镜、扫描电子显微镜和电性能测试系统研究复合薄膜及其电极在经过不同温度退火后的晶体结构、表面形貌和电学性能的变化.ZnO∶Sn膜层致密,25 nm厚的ZnO∶Sn 足以保护Ag层在530℃的高温中不被明显氧化,电极电阻率低达2.0×10-8Ω·m左右.     

ZnO/Ag纳米复合材料的制备及电学性能研究

在室温下,利用超声活化法将机械研磨13h的Zn粉在V(水)∶V(环己烷)=19∶1的分散体系中合成ZnO纳米颗粒悬浮液,然后通过光还原AgNO3制备出ZnO/Ag纳米复合材料。并用X射线粉末衍射仪(XRD)、透射电子显微镜(TEM)对ZnO/Ag复合颗粒表征,用扫描电子显微镜(SEM)和探针台I-V测试仪对ZnO/Ag复合薄膜表征和电学性能测试,通过XRD和TEM得出,超声合成的ZnO具有六方纤锌矿结构,长约20nm的短棒状;经光还原沉积在其表面的纳米Ag呈现面心立方结构,直径约为5nm。通过SEM和I-V伏安特性曲线得出,干燥温度对复合结构有较大影响,60℃干燥的复合薄膜比较致密均匀,导通电压大约2V左右,在100℃时开始转变为有氧化锌附着的枝状银网状复合物,导通电压在0.02V左右,通过控制干燥温度可改变复合薄膜中ZnO和Ag的结合方式以及相应的电学性能。     

Rapid thermal annealing of sputter-deposited ZnO/ZnO:N/ZnO multilayered structures

Rapid thermal annealing (RTA) of sputter-deposited ZnO/ZnO:N/ZnO multilayered structures formed by a combination of radio-frequency magnetron sputtering and a microwave plasma source was investigated for the fabrication of highly-crystallized ZnO:N films. The assistance of the microwave plasma source resulted in the enhancement of nitrogen incorporation into the ZnO films and the deterioration of film crystallization. On the other hand, crystallization of the ZnO:N layer was improved by RTA with no significant effusion and diffusion of N atoms using a ZnO/ZnO:N/ZnO multilayered structure. The role of the front and bottom ZnO layers during RTA of ZnO/ZnO:N/ZnO multilayered structures is demonstrated.     

Annealing effect of ZnO/Au/ZnO transparent conductive films

Au intermediate ZnO (ZAZ) thin films were prepared by radio frequency and direct current magnetron sputtering on glass substrates and then vacuum annealed. The thickness of each layer of the ZAZ films was set at 50 nm, 3 nm, and 47 nm, respectively. The structural, electrical, and optical properties of ZAZ films were investigated with respect to the variation of annealing temperature.As-deposited AZO films showed X-ray diffraction peaks corresponding to ZnO (002) and Au (111) planes and those peak intensities increased with post-deposition vacuum annealing. The optical and electrical properties of the films were strongly influenced by post-deposition annealing. Although the optical transmittance of the films deteriorated with an Au interlayer, as-deposited ZAZ films showed a low resistivity of 2.0 × 10⁻⁴ Ω cm, and the films annealed at 300 °C had a lower resistivity of 9.8 × 10⁻⁵ Ω cm. The work function of the films increased with annealing temperature, and the films annealed at 300 °C had a higher work function of 4.1 eV than the films annealed at 150 °C. The experimental results indicate that vacuum-annealed ZAZ films are attractive candidates for use as transparent electrodes in large area electronic applications such as solar cells and large area displays.     

Design of ZnO/Ag/ZnO multilayer transparent conductive films

We have studied the properties of ZnO/Ag/ZnO multilayers prepared on glass substrates by simultaneous RF magnetron sputtering of ZnO and dc magnetron sputtering of Ag. The electrical and optical performance of Ag and ZnO single layer films was also investigated. Different optimization procedures were used for good transparent conductive film. Several analytical tools such as spectrophotometer, scanning electron microscope (SEM), four-point probes were used to explore the causes of the changes in electrical and optical properties. Low sheet resistance of 3 Ω/sq. and transmittance over 90% at 580 nm was achieved. The results of optimization condition of both oxide layers and metallic Ag layers were illustrated.     

Improved interfacial wetability in Cu/ZnO and its role in ZnO/Cu/ZnO sandwiched transparent electrodes

Oxide/metal/oxide(OMO) and its derivatives are considered as the promising alternatives to achieve high performance transparent electrodes(TEs). The percolation thickness and conductivity of the metal layer are very crucial for the optoelectrical properties of any OMO TE. Here, we report a facile method to promote the initial growth of the metal layer by improving the interfacial wettability between O-M interface. By subsequently combined with high-quality zinc oxide(ZnO) films, ZnO/Cu/ZnO TEs that have not only low sheet resistance(19.3/sq) but also enhanced thermal stability can be obtained, with a performance of an average transmittance of 84.4% over the visible spectral range of 400–800 nm.     

Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 × 10^− 4 Ω-cm, which can be decreased to 3.8 × 10^− 5 Ω-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 × 10^− 3 Ω^− 1. It was shown that the multilayer thin films have potential for applications in optoelectronics.     

电化学沉积法制备ZnO及ZnO/酞菁锌杂化薄膜

采用电化学沉积法在ITO玻璃基体上成功地制备出各种形态且均匀的ZnO及ZnO/酞菁锌薄膜.利用SEM、XRD以及UV-Vis光谱仪等分析方法对不同工艺下制备的薄膜进行了研究,结果显示所制备的纯ZnO薄膜为具有特定晶形的多晶,晶粒尺寸约为0.5～2 μ m;而ZnO/酞菁锌杂化薄膜为非晶态,染料分子与ZnO分子间的相互作用既影响了ZnO的晶体生长又改变了染料的光谱特性,形成了ZnO/酞菁锌杂化薄膜.     

MOF衍生的多孔ZnO/C、Ag/ZnO/C复合材料光催化性能研究

以金属有机骨架(MOF-5)为前驱体, 通过高温热处理和湿化学法获得ZnO/C和Ag/ZnO/C两种光催化复合材料。采用X 射线衍射(XRD)、扫描电子显微镜(SEM)、X射线能谱(EDS)和紫外-可见分光漫反射(UV-Vis DRS)等方法对所得样品的晶体结构、形貌特征、组成及光谱特性进行了表征。结果显示, 高温热处理保留了MOF-5的原始结构。ZnO/C比表面积为390 m²/g, 载银后比表面积仍达232 m²/g, 负载的银颗粒尺寸约30 nm。光催化降解实验表明ZnO/C和Ag/ZnO/C复合材料对亚甲基蓝(MB)都具有很高的降解效率, 均优于商业TiO₂。Ag/ZnO/C的光催化性能更好, 且具有较好的重复利用和稳定性。因此, 适度的高温碳化和掺杂贵金属是获得优良光催化性能的根本原因。     

退火对ZnO/Cu/ZnO透明导电薄膜性能的影响

室温下利用磁控溅射制备了ZnO/Cu/ZnO透明导电薄膜,采用X射线衍射(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、霍尔效应测量仪和紫外-可见分光光度计研究了薄膜的结构、形貌、电学及光学等性能与退火温度之间的关系。结果表明:退火前后薄膜均具有ZnO(002)择优取向,随着退火温度的升高,薄膜的晶化程度、晶粒粒径及粗糙度增加,薄膜电阻率先降低后升高,光学透过率和禁带宽度先升高后降低。150℃下真空退火的ZnO/Cu/ZnO薄膜的性能最佳,最高可见光透光率为90.5%,电阻率为1.28×10-4Ω·cm,载流子浓度为4.10×1021cm-3。     

Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures for photovoltaic applications

Although ZnO and ZnS are abundant, stable, and environmentally benign, their band gap energies (3.44, 3.72 eV, respectively) are too large for optimal photovoltaic efficiency. By using band-corrected pseudopotential density functional theory calculations, we study how the band gap, optical absorption, and carrier localization can be controlled by forming quantum-well-like and nanowire-based heterostructures of ZnO/ZnS and ZnO/ZnTe. In the case of ZnO/ZnS core/shell nanowires, which can be synthesized using existing methods, we obtain a band gap of 2.07 eV, which corresponds to a Shockley-Quiesser efficiency limit of 23%. On the basis of these nanowire results, we propose that ZnO/ZnS core/shell nanowires can be used as photovoltaic devices with organic polymer semiconductors as p-channel contacts.