Single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum-welllaser

We have developed single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum well lasers as sources for O₂ sensing through laser absorption spectroscopy. Devices containing a 4-μm-wide ridge waveguide exhibit low threshold currents of 25 mA and quantum efficiencies greater than 35% at output powers in excess of 25 mW. The spectral linewidths of these devices are 12.0 MHz at 15 mW. Temperature- and current-tuning rates are 0.06 nm/°C and 0.0075 nm/mA (-3.9 GHz/mA), respectively. The devices display smooth, continuous, single-mode wavelength tuning over a 4.2 nm interval     

Narrow spectral linewidth 150 mW semiconductor laser with fundamental transverse mode for SHG light source

A highly reliable, narrow spectral linewidth, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed, by optimising the structure with a 0.7 mu m thick p-cladding layer, a 900 mu m long cavity length, and current-blocking regions near the facets. Stable, fundamental transverse mode operation was obtained up to 230 mW. The spectral linewidth was 5 MHz at 150 mW. stable operation under 150 mW at 50 degrees C was confirmed for more than 2000 h.<>     

基于半导体可饱和吸收镜锁模的Yb:NaY(WO4)2飞秒激光器

采用提拉法生长了Yb:NaY(WO4)2晶体,使用透射式半导体可饱和吸收镜(SESAM),实现了激光二极管(LD)抽运的连续波锁模飞秒激光运转。当最大抽运功率为8.6 W时,输出功率为164 mW,中心谱线为1035 nm,锁模脉冲的重复频率为35 MHz。经测量此时锁模脉冲宽度为246 fs。     

Single-frequency Ti:Al2O3 ring laser

Over 500 mW of single-frequency power has been obtained from a Ti:Al₂O₃ ring laser pumped by 10 W (all lines) from an argon ion laser. The ring laser can be tuned from 750 to 850 nm while maintaining more than 100 mW in single-frequency operation without realignment or a change of optics. The free-running frequency stability of the laser is 3 MHz. Thermal effects cause changes in the ring cavity parameters, limiting the output power. This ring laser has also been operated with an acoustooptic mode locker to obtain 200-ps mode-locked pulses at 250 MHz with nearly the same average power as in single-mode operation     

A 35-ns 128K/spl times/8 CMOS SRAM

A 128 K/spl times/8-b CMOS SRAM with TTL input/output levels and a typical address access time of 35 ns is described. A novel data transfer circuit with dual threshold level is utilized to obtain improved noise immunity. A divided-word-line architecture and an automatic power reduction function are utilized to achieve a low operational power of 10 mW at 1 MHz, and 100 mW at 10 MHz. A novel fabrication technology, including improved LOCOS and highly stable polysilicon loads, was introduced to achieve a compact memory cell which measures 6.4/spl times/11.5 /spl mu/m/SUP 2/. Typical standby current is 2 /spl mu/A. The RAM was fabricated with 1.0-/spl mu/m design rules, double-level polysilicon, and double-level aluminum CMOS technology. The chip size of the RAM is 8/spl times/13.65 mm/SUP 2/.     

A new single-chip C/SUP 2/MOS A/D converter for microprocessor systems-Penta-Phase Integrating C/SUP 2/MOS A/D converter

A new unique conversion technique named the `Penta-Phase Integration' method, applied to a single-chip C/SUP 2/MOS 12-bit analog-to-digital converter designed for microprocessor system, is introduced and described. The newly developed device, fabricated with a standard metal gate CMOS process including an 8-channel multiplexer and TTL compatibility, has several features: unipolar- and ratiometric-conversion can be performed; conversion accuracy within /spl plusmn/0.05 percent of full scale over the -35/spl deg/C-+85/spl deg/C temperature range can be obtained; conversion time is 1.1 ms at a 20 MHz clock frequency, and the device can be operated with a single 5 V power supply and 6 mW power consumption at a 4 MHz clock frequency. The new technique essentially incorporated several methods which divide one conversion cycle into five-phases, accomplish minimization of the error caused by comparator response delay, provide several narrow flat phases to eliminate switching errors due to parasitic capacitance, and enable high clock frequency operation in digital circuits by utilizing C/SUP 2/MOS circuit technology and a synchronized configuration for counters.     

连续波Nd:YVO4/LBO稳频倍频红光全固态激光器

利用激光二极管(LD)端面抽运YVO4-Nd∶YVO4复合晶体,采用四镜环形谐振腔及Ⅰ类临界相位匹配(CPM)LBO晶体进行腔内倍频,在腔中插入TGG晶体和λ/2波片组成的光学单向器,设计了满足热不灵敏条件和最佳倍频条件的谐振腔型,实现了全固态连续稳频倍频红光激光器。在19 W抽运功率下,同时获得了610 mW的671 nm单频红光输出和400 mW的单频1342 nm红外光输出。红光30 min内输出功率波动小于±0.6%。自由运转时,基频光(1342 nm)1 min频率漂移为±5 MHz,锁定后基频光1 min频率稳定性优于±1 MHz。     

激光二极管泵浦高效Nd:YVO4激光器特性研究脉冲倍频稳频Nd:YAG环形激光器

报道了激光二极管泵浦高效Nd:YVO4激光器输出功率及波长特性的研究。基频光输出230 mW, 光-光转换效率为45%。对激光输出波长和泵浦功率的关系进行了研究, 发现激光器的输出波长随泵浦功率的平均变化率约为1.05×10 -3 nm/mW。利用KTP腔内倍频获得29.8 mW的绿光输出, 光-光转换效率为12.4%。在脉冲稳频Nd:YAG激光器的基础上, 采用辅助的长脉冲网络泵浦和短而强的主脉冲泵浦相结合, 以F-P共焦腔为参考频标, 通过同步搜索补偿稳频技术和截波技术.获得中心频率稳定、频漂小于10 MHz、脉宽100 μs、峰值功率>100 W的无尖峰结构的0.53 μm稳频绿光输出。     

波长扫描锁模掺Er光纤激光器的实验研究

阐述了波长扫描锁模掺Er光纤激光器的工作机制,并进行了实验研究.用波长980nm的激光二极管作为泵浦源,在可调谐滤波器100 Hz的扫描频率下,得到了重复频率25 MHz,波长扫描范围1 527～1 534 nm的稳定脉冲序列.激光器以锁模运转的阈值泵浦功率为8.7 mW.当入纤泵浦功率为57.6 mW时,得到了平均功率为0.68 mW的脉冲输出.     

Operation of diode laser pumped Tm3+ ZBLAN upconversionfiber laser at 482 nm

Lasing at 482 nm is observed in Tm³⁺-doped ZBLAN glass fiber pumped with single-mode InP semiconductor diode lasers. Up to 5 mW of 482 nm light is obtained with <40 mW of absorbed pump power from a single 1135 nm pump diode laser. The optimum pump wavelength is measured to be 1135-1340 nm. More efficient laser operation is observed in fiber with 2500 ppm Tm³⁺ compared to 1000 ppm Tm³⁺ because of the reduced length of the fiber laser cavity possible with increased doping. Improved slope efficiencies are also demonstrated when the fiber laser is co-pumped with up to 5 mW from a 1220 nm diode laser. The relative intensity noise (RIN) of the fiber laser displays a maximum of -90 dB/Hz at relaxation oscillation frequencies of a few tens of kHz. The measurement of RIN is limited by shot-noise of -152 dB/Hz above 2 MHz. At higher frequencies, self mode-locking was observed in the fiber laser, which may indicate the existence of saturable absorbers in the fiber core. The presence of such bleachable absorbers is indicated by the observed increase in threshold after upconversion lasing at 482 mm     

高稳定度窄线宽激光器的研究

介绍了3种不同类型的高稳定度窄线宽激光器的研究进展.基于Littman结构和饱和吸收光谱稳频技术,研制了稳频外腔半导体激光器系统,输出波长为780.2 nm,频率稳定度1 MHz,不失锁时间大于12 h.利用边带稳频技术将分布反馈(DFB)激光器的输出波长稳定在Cs原子的吸收谱线的边带处,引入数字信号处理器(DSP)全数字稳频控制技术,实现了自动找频和稳频,获得波长为852.3 nm的稳频激光输出,24 h内频率漂移为±2 MHz.利用国产磷酸盐玻璃光纤作为增益介质,实现了一台高功率单纵模光纤激光器,制作的厘米级激光器实现了最大输出功率100 mW,利用外部光反馈实现单偏振运转,测得输出线宽为2 kHz,偏振消光比优于35 dB.     

Realisation of monolithically integrated single frequency MQW laser and booster amplifier at 1.5 mu m wavelength

The fabrication and performance of a 1.5 mu m wavelength multiquantum well distributed feedback laser monolithically integrated with a booster amplifier are described. Single longitudinal mode operation was achieved at output powers exceeding 45 mW. A minimum spectral linewidth of 2.3 MHz was obtained, with powers of 35 mW being reached before linewidth rebroadening occurred.<>     

An All-Digital RF Signal Generator Using High-Speed $DeltaSigma$ Modulators

An all-digital RF signal generator using DeltaSigma modulation and targeted at transmitters for mobile communication terminals has been implemented in 90 nm CMOS. Techniques such as redundant logic and non-exact quantization allow operation at up to 4 GHz sample rate, providing a 50 MHz bandwidth at a 1 GHz center frequency. The peak output power into a 100 Omega diff. load is 3.1 dBm with 53.6 dB SNDR. By adjusting the sample rate, carriers from 50 MHz to 1 GHz can be synthesized. RF signals up to 3 GHz can be synthesized when using the first image band. As an example, UMTS standard can be addressed by using a 2.6 GHz clock frequency. The measured ACPR is then 44 dB for a 5 MHz WCDMA channel at 1.95 GHz with output power of -16 dBm and 3.4% EVM. At 4 GHz clock frequency the total power consumption is 120 mW (49 mW for DeltaSigma modulator core) on a 1 V supply voltage, total die area is 3.2 mm² (0.15 mm² for the active area).     

Efficient Frequency Doubling of a Low-Power Femtosecond Er-Fiber Laser in BiB$_{3}$ O$_{6}$

BiB₃O₆ (BIBO) crystal has been used for efficient second-harmonic generation (SHG) of a low-power femtosecond Er-fiber laser-amplifier system operating at 56 MHz. At the maximum input power of 65 mW, an internal conversion efficiency of 23% was achieved for SHG at 782 nm, with a pulse duration of 64 fs. A comparison with beta-BaB₂O₄ reveals superior properties of BIBO for such ultrashort-pulse ultra-broadband SHG.     

A microwave discriminator at 35 GHz

The implementation of a new form of microwave frequency discriminator is described. For a center frequency of 35 GHz the measured bandwidth between response peaks was 400 MHz compared to a theoretical value of 441 MHz. Sensitivity at center frequency measured 4 mV/MHz for an input power level of about 0.9 mW.     

LTE上行DFT硬件加速器的设计

针对LTE上行链路离散傅里叶变换（DFT）预编码的多模式需求,提出了一种基于ASIC的 DFT硬件电路实现方案。采用基于WFTA算法的基4/2/5/3蝶形运算单元实现35种长度的DFT运算,采用二维缓存结构实现蝶形单元流水处理。在200 MHz时钟频率、SMIC 40 nm工艺条件下,硬件电路面积为0.87 mm2,功耗为12.5 mW。仿真与综合结果表明,文中设计的DFT硬件加速器具有运算速度快、存储资源占用少的优点,适合于LTE工程应用。     

78 fs被动锁模掺Er3+光纤激光器

用性能稳定的976 nm激光二极管(LD)作为抽运光源,利用非线性偏振旋转(NPR)作为可饱和吸收体,实现了环形腔结构的被动锁模掺Er3 光纤激光器.在抽运功率为57 mW时,通过调节与波长无关的全光纤在线偏振控制器,获得了谱线宽度为40.8 nm,中心波长1544.0 nm,脉冲宽度为78 fs的稳定飞秒脉冲激光,其重复频率为11.18 MHz,平均输出光功率为5.4 mW,单个脉冲能量为0.5 nJ,峰值功率为6200 W.     

砷化镓表面自旋极化光电子发射

本文详细地介绍了在圆偏振光作用下,NEA GaAs表面发射目旋极化光电子的原理,及NEA GaAs表面的制备和装置。介绍了表面Cs-O激活的方法。在用此法激活的NEA GaAs(100)表面上可得到灵敏度为8A/mW,极化度约用35%以上的光电子束。发现清洁的GaAs表面覆盖以50%60%Cs单原子层时,光电子的发射出现第一个极大值,同时发现稳定的发射取决于铯吸附量。     

Diode-End-Pumped Passively CW Mode-Locked Nd:YLF Laser by the LT-In$_0.25$Ga$_0.75$As Absorber

We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In$_0.25$Ga$_0.75$As) grown by metal–organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ.     

单频分布布拉格反射光纤激光器及温度传感实验研究

报道利用Er∶Yb双掺杂光纤制作的单频窄线宽分布布拉格反射 (DBR)光纤激光器。在 980nm半导体激光器抽运下 ,当抽运功率为 75mW时 ,获得了输出功率为 2 3mW的单频激光 ,其中心波长为 1 5 5 7 5 2 4nm ,线宽小于 5MHz。利用制作的单频DBR光纤激光器构成光纤有源传感系统 ,进行温度传感实验研究 ,实验结果线性度很好 ,高信噪比和高输出功率使得该系统具有波长易于检测的优点