Boost变换电路的损耗分析

分析了开关器件、电感在硬开关Boost PFC电路中的损耗,并对Boost PFC变换器电路的开关损耗进行了计算,给出了其功率损耗的计算方法.同时通过对有源功率因数校正集成电路UC3854实现Sever Computer的600W开关电源的分析计算,用实验验证了Boost PFC电路功率损耗计算方法的正确性.     

基于双脉冲的IGBT及驱动电路测试方法

文章设计了双脉冲测试电路,可以方便地测量IGBT在实际电路中的开关特性与损耗,调节电感的大小与脉冲宽度,可以测试驱动电路的过流保护、短路保护、电压钳位功能,反映了IGBT在实际应用中的动态性能,同时可以计算平面母线的杂散电感,取得了较好的效果。     

基于并联型有源电力滤波器的电路设计

本文针对并联型有源电力滤波器(APF)的主电路及其外围电路进行了深入的研究,详细讨论了主电路开关器件的选择、缓冲电路的设计,并且采用理论分析和仿真实验相结合的方法,给出了直流母线电压的取值、直流母线电容量以及交流侧滤波电感值的选择方法。并根据上述分析方法得出了并联型APF的主电路具体器件选型及外围电路的详细设计参数。     

开关磁阻电机故障诊断系统研究

本文以TMS320F2812为控制器,以四相8/6型开关磁阻电机(SRM)为控制对象,设计了一种性能优良的具有故障诊断功能的开关磁阻电机调速系统。本文介绍了开关磁阻电机调速系统的工作原理,包括功率变换器,电流检测,位置检测,速度检测等硬件电路,并重点分析了系统的故障运行情况。最后给出了实验波形,说明开关磁阻电机具有良好的容错性能。     

某型电动轮矿用车电机控制器的散热设计

对电动轮矿用车自卸车电机控制器的热损耗进行了分析,对主要发热器件IGBT模块进行了损耗分析与计算,对功率器件散热的热流路径进行了分析计算,提出了散热冷板功率和热阻指标要求与散热设计,最后对冷板的散热性能进行了热性能试验,试验结果表明满足设计要求。     

开关磁阻电机功率变换器主电路拓扑结构

本文对现有的开关磁阻电机功率变换器主要电路进行了简单的分类，介绍了各类功率变换器的拓扑结构，并对所有的拓扑结构进行了比较，对选择SRD功率变换器有限强的指导意义。     

基于GaN器件的有源箝位双向反激变换器设计

文章针对氮化镓(Gallium Nitride,GaN)功率晶体管在双向DC-DC变换器中的应用进行设计。近年来,第三代宽禁带功率半导体器件GaN凭借其体积小、高频、高效率等优势,在电力电子应用中得到了广泛的关注。为实现双向DC-DC变换器在便携式小功率应用场景下的能量双向高效传输,设计了一种基于GaN器件的有源箝位双向反激变换器并对其性能进行了验证。详细地介绍和分析了变换器的工作原理、开关模态以及软开关实现条件,并对主电路参数进行设计。采用LTspice软件搭建仿真模型,仿真结果验证了该变换器在小功率应用下可实现开关管软开关性能。最后,设计了一个20 W的实验样机验证了所设计拓扑的准确性和有效性,结果表明该变换器较传统Si MOSFET器件具有更高的转换效率。     

寄生电感对碳化硅MOSFET开关特性的影响

相比于传统的Si IGBT功率器件而言,碳化硅MOSFET可达到更高的开关频率、更高的工作温度以及更低的功率损耗.然而,快速的暂态过程使开关性能对回路的寄生参数更加敏感.因此,为了评估寄生电感对碳化硅MOSFET开关性能的影响,基于回路电感的概念,将栅极回路寄生电感、功率回路寄生电感以及共源极寄生电感等效成3个集总电感,并且从关断过电压、开通过电流及开关损耗等3个方面,对这3个电感对SiC MOSFET开关性能的影响进行了系统的对比研究.研究表明:共源极寄生电感对开关的影响最大,功率回路寄生电感次之,而栅极回路寄生电感影响最小.最后,基于实验分析结果,为高速开关电路的布局提出了一些值得借鉴的意见.     

基于电流检测的飞机地面电源同步整流控制

三相整流器作为飞机地面电源的前级为后级电力变换提供稳定的直流母线。飞机地面电源的容量可达100~200kVA,传统的二极管整流方案效率低、损耗大、发热量高、散热问题严峻。针对上述问题提出了一种基于电流检测的大功率同步整流控制方案,其中主电路采用多个功率MOSFET并联取代传统的整流二极管。通过分析整流电路各开关器件的通断状态与输入电流的关系,明确各开关器件的动作规律;进一步检测输入三相电流的大小与方向,提出功率MOSFET的同步整流驱动控制方案。然后考虑实际工程应用因素,设计电流回差方案以产生各功率MOSFET的驱动信号,并考虑霍尔器件、采样电路与控制电路的延迟对回差的各阈值进行修正。最后通过Simulink仿真及工程样机实验平台进行验证,结果显示本文所提方案可有效实现MOSFET的同步整流功能,提高了整流电路的效率,降低了系统的热损耗。     

移相控制ZVC PWM DC／DC全桥变换器的设计

就谐振软开关技术在DC／DC变换器中广泛应用,介绍了一种移相控制ZVC PWM DC／DC全桥变换器的设计方法,其包括功率开关管参数选取、主变压器设计、换流电感设计、缓冲电容选择及参数验算等。     

交流传动机车牵引变流器的设计与控制

交流传动电力机车牵引变流系统的特点,本文提出了大功率变流器集成箱设计概念,研究了牵引变流器集成箱设计技术。程集成箱的设计中,从机械强度、怛电距离、低感母排、电磁兼容、散热管理和维护便利几个方面,探究了变流器工作可靠性相关的结构布局和功能部件易于装拆的机电接口设计。牵引变流器控制策略考虑不周不仪能引起外部电网和牵引变流器之间到振荡,电能引输出电机到端部过电压和轴承漏电流并加速电机的损坏。本文分析了牵引变流器的控制对系统性能的影响,提出了改善控制策略的具体措施并得到实际结果的证实。     

基于粒子群算法的LCLC谐振变换器优化设计

LCLC谐振变换器广泛应用在空间行波管放大器(TWTA)中,起到升压的作用。在LCLC谐振变换器中,具有多个谐振参数,即变压器漏感、串联谐振电容、励磁电感以及并联谐振电容。多个谐振参数增加了LCLC谐振变换器总损耗优化的难度。该文提出一种基于粒子群优化算法的LCLC谐振变换器优化设计方法,解决LCLC谐振变换器由于多个谐振参数造成的总损耗优化困难的问题。首先,推导了LCLC谐振变换器的总损耗公式;其次,采用粒子群优化算法,对LCLC谐振变换器的总损耗进行了优化,得到了总损耗最小时的谐振变换器参数;最后,基于优化的LCLC谐振变换器参数,搭建了LCLC谐振变换器,并进行了一系列实验。实验结果证明了该优化设计方法的有效性。     

单端正激变换器谐振磁复位技术的研究

针对单端正激式DC／DC变换器的磁复位问题,本文对无需外加辅助电路,仅通过开关器件寄生电容与变压器励磁电感实现的谐振式磁复位电路进行了研究。文中详细分析了电路在一个开关周期内的6种不同开关模态．给出了参数设计的计算公式,进行了仿真分析和实验研究,并应用于车载式锂离子动力电池充电单元的研制。     

A contactless power transfer system using a series–series–parallel resonant converter

In this article, a contactless power transfer system using a series–series–parallel resonant converter (SSPRC) is proposed. The proposed converter can improve on or eliminate the disadvantages of the contactless system based on conventional resonant converters, since it independently compensates for a primary side leakage inductance, a secondary side leakage inductance and a magnetising inductance. The proposed converter also reduces the circulating currents and the reactive power by controlling the phase angle difference between the inverter output voltage and the current. In addition, the system design can be simplified, since the voltage gain is determined only by the transformer turns ratio for the overall load range without being affected by the other transformer parameters. The proposed converter is analysed with respect to the gain and current margin. The system design procedure is then described for the proposed circuit based on the circuit analysis. Finally, the experimental results are presented in order to verify the proposed contactless power supply.     

Electro thermal modeling of the power diode using Pspice

In this paper, an improved electro thermal model of power diode was developed. The main local physical effects were taken into consideration. The suggested model is able to address the electrical and thermal effects. The model was confirmed through a comparison with other models having close characteristics for different circuits (AC-DC converter, turn-on and turn-off) and different temperatures. The diode was implemented in the Pspice circuit simulation platform using Pspice standard components and analog behavior modeling (ABM) blocks. The diode switching performance was investigated under influence of different circuit elements (such as stray inductance, gate resistance and temperature) in order to study and estimate the on-state and switching losses pre-requisite for the design of various converter and inverter topologies. The comparison shows that these models are simple, tunable with the electric circuit software simulator. They are more capable of predicting the main circuit parameters needed for power electronic design. The transient thermal responses were demonstrated for the single pulse and repeat modes. The achieved results show that our model is suitable for full electro thermal simulations of power electronic circuits.     

三阶高频并联谐振变换器的相平面分析和设计

本文用相平面分析法分析和设计了一种电容耦合的并联谐振变换器。引入附加电容与传统的并联谐振变换器中的电感相串联,能获得更好的调节功能。本文利用平面轨迹图,给出了选择电路元件参数的设计依据。     

Electromagnetic considerations in power electronic converters

Electromagnetic effects have an important influence on all aspects of power electronic design. The effects of stray magnetic and electric fields on circuit performance, and the necessity to control the resulting stray inductance and capacitance by good circuit design practices are introduced. Inductors are key components and the pressure to design to meet high-frequency specifications is relentless. Four types of inductors are discussed briefly and their electromagnetic properties are compared and contrasted. High-frequency transformers are discussed in terms of their impact on circuit behavior and their major design issues. The limitations of conventional topologies at multimegahertz frequencies are explored. A circuit example of a half-bridge series-parallel resonant converter working between 1-2 MHz and implemented using hybrid technologies is used to demonstrate how circuit, component and layout design are electromagnetically interdependent     

反激变换器箝位电路的设计

反激式变换器原边漏感引起的电压尖峰对功率器件和电路性能影响很大,本文基于抑制漏感尖峰影响的目的,考虑到次级反射电压也为箝位电路提供能量,同时箝位电容电压并非不变量,采用了一种改进的箝位电路的设计方法,推导出的表达式,结合反激变换器应力、效率和传导干扰实验,得出了随着箝位电阻值的增大,变换器的效率会提高、传导干扰会变差的结论.根据反激变换器对效率和EMI的侧重点不同,选取箝位电路参数可以满足反激变换器不同的设计要求.     

Design of high-efficiency RF Class-D power amplifier

In this paper, the losses in a Class-D RF switching power amplifier and their frequency dependence are described. The losses analyzed are the switching, conduction, and gate drive losses. A 300 W, 13.56 MHz, Class-D circuit is designed in the traditional manner to illustrate the magnitude of the different types of loss. A circuit using the ZVS equations developed in this paper is designed. An experimental circuit is built using standard IRF540 devices in TO220 packages. That circuit does not meet its performance goals because of the package inductance. A new low inductance half-bridge package is introduced to solve this problem. Techniques for circuit layout and power measurements for RF applications are also presented in the experimental section. A low loss gate drive circuit is also presented using a Class-E circuit to provide the drive power. The experimental results confirm the accuracy of the design equations derived in this paper     

Design of a thyristor snubber circuit by considering the reverserecovery process

Design procedures are presented for the snubber circuit in power electronic circuits by considering the reverse recovery process of the thyristor. The thyristor turnoff model, whose parameters are determined for best fitting to the device characteristics given on the data sheets, is applied to analyze the behavior of the snubber circuit with and without a saturable reactor during the reverse recovery time of the power device. Based on the turnoff model, exact expressions are derived for various quantities of interest including the maximum device stress, maximum reverse dv/dt, the reverse energy loss of a power device, and the total turnoff loss in the device plus the associated snubber circuit. Utilizing the analysis results, a systematic approach to the snubber-circuit design with the stray inductance taken into account is described. It is concluded that the proposed approach is very useful in the simulation of turnoff characteristics of the power device, snubber-circuit designs, and loss calculations in power circuits