近太赫兹频段线性注真空器件的研究

介绍了太赫兹频段真空电子器件的研究和开发进展,包括慢波结构理论、设计、模拟及优化,微加工和微组装技术,整管技术等。这些器件包括行波管、返波管、斜注管、止带振荡器及行波管谐波放大器等,高频结构以折叠波导慢波结构为主,在太赫兹返波管中则利用叶片加载波导慢波结构。器件技术包括微机电系统(MEMS)技术,微波等离子体化学气相沉积(MPCVD)金刚石生长、金属化和封接技术等。最后给出W波段、G波段以及340 GHz部件和器件所达到的性能。     

微加工工艺误差对THz折叠波导行波管性能影响

在太赫兹频段,折叠波导慢波结构主要采用微细加工技术完成。讨论了目前折叠波导慢波结构主要的微加工工艺,分析了主要工艺误差包括波导深度、侧壁垂直度对0.41 THz折叠波导慢波结构高频特性的影响。通过分析比较,a值对折叠波导行波管性能影响很大,需要在工艺中精确控制。在侧壁垂直度为89°范围以内,侧壁垂直度的变化对折叠波导行波管性能影响不大。通过仿真分析,确定了工艺中必须控制加工精确度的工艺步骤,这对0.41 THz折叠波导行波管的研制有非常重要的意义。     

345 GHz微折叠波导慢波结构参数分析

借助微机电加工技术(MEMS技术)研制的微折叠波导行波管(FWG-TWT)太赫兹辐射源,具有紧凑、小型、宽带以及高功率的特点。本文对345 GHz微电真空折叠波导慢波结构进行了结构参数的规律分析和初步优化设计。基于小信号理论设计的慢波结构的初步结构参数,采用三维PIC软件仿真并优化,研究了电子参数、几何结构参数、磁场参数与增益之间的关系,对折叠波导慢波结构的设计具有一定的参考意义。     

0.14 THz大功率回旋行波管前级激励源粒子模拟研究

以折叠波导行波管作为大功率回旋行波管的前级激励信号源,利用电磁仿真软件HFSS和粒子模拟软件(CST粒子工作室),对0.14 THz微电真空折叠波导行波管慢波结构的色散特性、耦合阻抗进行计算分析,然后对折叠波导行波管束波互作用过程进行粒子模拟,最后通过粒子模拟得到该折叠波导行波管的增益、工作电压、电流等工作特性参数。在电压为13.9 kV、电流为16 mA,输入功率为5 mW的条件下,输出功率为5 W,线性增益为30 dB,带宽3.7 GHz,最大输出功率为6.2 W,该结果为0.14 THz大功率回旋行波管实现kW量级的功率输出提供功率足够的前级馈入信号奠定了基础。     

折叠波导慢波结构太赫兹真空器件研究

简要介绍了利用折叠波导慢波结构的太赫兹真空辐射源的发展现状,重点对折叠波导慢波结构的特点进行了研究,并利用这种慢波结构开展了W、D波段行波管,W波段和650GHz返波振荡器,560GHz反馈振荡放大器的设计、计算和模拟优化,分别得到了较好的结果,并实际研制出W波段连续波行波管,输出功率达到8W。对太赫兹真空辐射源的部件技术、微细加工技术进行了研究和分析。     

微加工和太赫兹真空电子器件技术进展

本文对微加工和太赫兹真空电子器件技术进展进行了评论,讨论了微加工和太赫兹真空电子器件可能的应用,也研究了微型器件、微加工的关键技术和需要进一步研究的理论和技术问题。     

0.41 THz折叠波导慢波结构分析与设计

在0.14 THz,0.22 THz和0.34 THz折叠波导行波管研制的基础上,讨论了0.41 THz折叠波导行波管慢波结构设计与加工的可行性,分析研究了折叠波导慢波结构弯曲处直角弯曲与半圈弯曲、方形电子注通道与圆形电子注通道对色散特性、耦合阻抗、带宽、冷损耗和增益的影响。考虑了慢波结构中增加理想衰减器对该行波管带宽和增益的影响,得到了0.41 THz折叠波导行波管慢波结构的初步设计方案,为太赫兹折叠波导行波管的继续发展打下了一定基础。     

毫米波折叠波导行波管的研究

采用等效电路方法和电磁场仿真软件Ansoft HFSS分析了折叠波导行波管的结构参数对其高频特性的影响,并在此基础上确定了Ka波段折叠波导行波管的尺寸.利用三维非线性粒子模拟软件MAGIC3D建立了两段式折叠波导行波管的模型,模拟研究了切断区长度和位置对折叠波导行波管的饱和输出功率及第2段电路单位长度增益的影响.最后设计了一个工作于33～36GHz的两段式折叠波导行波管,其输出功率的波动小于1dB,最大连续波输出功率达670W,对应电子效率高达7.55％.     

微电真空折叠波导行波管放大器的电子枪设计

研制工作于太赫兹波段的微电真空折叠波导行波管(FWG-TWT)放大器,需要设计束流集中且发射度小、结构紧凑的热阴极电子枪.本文首先依据典型皮尔斯电子枪的设计理论,通过编程计算初步选定了热阴极电子枪的基本结构参数,然后利用模拟工具对电子枪的结构参数模型进行了初步的仿真优化.针对工作频率为0.22 THz的微型折叠波导行波...     

采用UV-LIGA技术制作340 GHz折叠波导慢波结构

紫外光刻、电铸和注塑(UV-LIGA)技术是制作太赫兹真空电子器件(包括谐振腔、电子注通道和输出波导等)的重要方法。采用 UV-LIGA技术制作340 GHz折叠波导慢波结构,研究前烘、曝光量、后烘对 SU8胶模的影响,着重讨论了曝光量的影响并分析其原因,得出最佳工艺。另外,本文还对去胶进行了初步研究,获得了全铜的340 GHz的折叠波导结构。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and sub-pixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.