光纤光栅毛细钢管封装工艺及其传感特性研究

提出了一种光纤光栅 (FBG)的毛细钢管封装工艺 ,并通过材料试验和水浴法试验对其应变与温度传感特性进行了研究。与裸光纤光栅的测试结果比较表明 ,毛细钢管封装工艺基本不改变光纤光栅的应变传感特性 ,但是温度灵敏度系数提高了约 2 5倍。经过该工艺封装的光纤光栅可以探测识别 1με与 0 .0 5℃的应变与温度变化。     

结构健康监测用光纤布拉格光栅应变传感器研究

采用不锈钢管对光纤布拉格光栅（FBG）进行封装并对其进行标定，粘贴在钢桁架表面测量结构的应变，封装光纤光栅显示了良好的传感性能，与电阻应变片测量结果吻合良好。封装后的光纤布拉格光栅传感器操作容易，便于安装，为建立工程结构健康监测系统奠定了基础。     

光纤光栅毛细钢管封装工艺及其传感特性研究

提出了一种光纤光栅的毛细钢管封装工艺,并通过材料力学多功能实验台和恒温箱对其应变与温度传感特性进行了研究。与裸光纤光栅的测试结果比较表明,毛细钢管封装工艺基本不改变光纤光栅的应变传感特性,但是温度灵敏度系数提高了约2.7倍,且线性度、重复性良好,为光纤光栅在温度测量领域的应用提供了一个很好的封装方法。     

一种增敏型光纤光栅应变传感器的开发及应用

提出了一种基于两端夹持封装技术的光纤光栅应变传感器.该传感器具有应变放大机制,测量精度超过了裸光纤光栅,而且通过改变封装工艺参数可以调节应变传递率.这种传感器既可以埋入结构中也可以通过辅助构件构成夹持式传感器.利用万能试验机对该传感器进行了应变性能标定实验,研究了不同基体材料上传感器的应变灵敏特件,并与理论分析结果作了对比.这种光纤光栅应变传感器在高层大厦模型地震试验中进行了检测.试验结果表明,基于两端夹持封装技术光纤光栅传感器具有良好的灵敏度、低噪、牢固可靠以及测量长期稳定性好的优点,是动载环境下工作的结构长期安全监测的理想器件.     

光纤光栅传感器的聚合物封装增敏技术

基于聚合物封装光纤光栅温度、应变传感原理,从聚合物材料的特点、聚合物材料的选择、用聚合物对光纤光栅传感器进行封装的要求及封装工艺进行了综述,并介绍了目前解决光纤光栅压力和温度增敏及应变和温度同时区分测量的各种方法,同时介绍了聚合物封装的应用前景。     

光纤光栅应变传感器预紧封装及传感特性研究

介绍了一种具有预紧力的基片式光纤光栅应变传感器封装方法,并根据Ansys建模及实验对其传感性能进行研究。使用宽10 mm,长22 mm,厚1 mm的铝合金7075-T6材质基片对光纤光栅进行预紧封装,所得带预紧封装传感器灵敏系数为1.05 pm/με,线性度达到0.99以上。表明预紧封装基片式光纤光栅应变传感器具有良好的线性度和应变测试灵敏度,对光纤光栅传感器封装工艺有指导作用。     

光纤光栅聚合物封装及传感特性研究

把两种聚合物(HTC-1, THE-5)及金刚砂按一定比例均匀混合后,对光纤光栅(FBG)进行封装处理:封装后光纤光栅的应变和温度传感线性度非常好,均达到0.99以上,应变线性范围超过8000微应变,与裸光纤光栅的测试结果相比灵敏度系数提高了3.5倍,温度灵敏度系数提高7倍左右,抗压强度为65 Mpa,完全满足土木结构的智能监测需要。     

光纤光栅聚合物封装及传感特性研究

把两种聚合物（HTC-1,THE-5）及金刚砂按一定比例均匀混合后,对光纤光栅（FBG）进行封装处理：封装后光纤光栅的应变和温度传感线性度非常好,均达到0.99以上,应变线性范围超过8000微应变,与裸光纤光栅的测试结果相比灵敏度系数提高了3.5倍,温度灵敏度系数提高7倍左右,抗压强度为65 Mpa,完全满足土木结构的智能监测需要.     

激光焊接封装的光纤光栅智能悬臂梁

针对光纤光栅在封装过程中容易遭受高温和热应力等破坏,采用激光焊接技术将镀镍金属化后的光纤光栅封装在316不锈钢表面。为了解决光纤光栅温度与应变的交叉敏感问题,基于参考光栅法的温度补偿原理制成了一种智能悬臂梁,实现了对温度和应变的同时测量。试验表明:光纤光栅两侧与不锈钢结合良好,激光焊接过程中光纤表面镀层未被损坏;焊接封装的光栅在23～47 ℃温度范围内进行了温度传感分析,温度灵敏度为22.15 pm/℃,较裸光栅提高了1.34倍。在恒定室温环境下和变温环境下,对焊接封装的光栅进行了应变传感试验,光纤光栅中心波长与应变成均线性变化关系,应变灵敏度分别为-2.24 pm/g和-2.27 pm/g。该智能悬臂梁有较高的测量精度,可用于工业生产中对温度和应变的实时监测。     

铝合金箔片封装光纤光栅传感特性研究

针对表面粘贴式光纤光栅(FBG)传感器存在的封装体积过大、粘接不便的问题,提出一种光纤光栅的铝合金箔片封装工艺,并通过悬臂梁加载实验和水浴加热法对封装后光纤光栅的应变与温度传感特性进行了实验研究.测试结果表明,经铝合金箔片封装后的光纤光栅传感器与裸光纤光栅相比较,应变灵敏度提高了1.2倍,达到1.407 pm/με,温度灵敏度提高了3.02倍,达到29pm/℃,中心波长的漂移与荷载及温度都具有良好的线性关系,且有较好的重复性.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and sub-pixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.