提高可靠性数据分析精度的一种有效方法

为更加准确地掌握导弹某部件的寿命规律，提高导弹某部件的可靠性数据处理精度，使得可靠性寿命模型更加符合实际情况，本文指出传统的平均秩次法在计算经验分布函数中存在的不足，提出一种改进的平均秩次法，实例结果证实了改进方法的有效性。     

航空磁探中使用边界元法的潜艇磁场建模

为解决航空磁异常探测中潜艇高空磁场分布难以测量的问题,根据Maxwell方程组和边界元法的基本原理,在预测空间基于格林函数,通过矢势分布求得潜艇空间磁场分布,建立潜艇磁场预测模型。使用磁偶极子仿真潜艇目标对预测模型进行初步理论验证,进一步设计实验对预测模型的有效性进行实际检验。根据理论和实验验证,结果表明,使用边界元法的潜艇磁场预测模型的平均绝对误差为0.220 5 n T,平均相对误差为2.368%。     

环氧模塑封材料的热-机械疲劳失效分析

封装材料的热疲劳失效是封装器件失效的主要原因之一。对在微电子封装中应用很广的环氧模塑封装材料进行了常温和高温下的拉伸、疲劳实验。基于以疲劳模量作为损伤因子的疲劳寿命预测模型,相应的材料参数通过实验获得。并通过实验得出了该环氧模塑封装材料考虑温度影响的疲劳寿命预测模型,利用该模型可以对微电子封装用高聚物的疲劳寿命进行预测。     

考虑退化状态的功率器件寿命预测研究

功率变流器是风机系统的核心组件,其可靠性直接影响风电系统的可靠性。风电变流器中主要的失效部件是IGBT模块,因此对IGBT模块进行寿命预测可以提高整个风电系统的可靠性。首先讨论变流器电热耦合模型中的退化参数,然后基于LESIT寿命预测模型和雨流循环计数法提出考虑IGBT模块退化状态的寿命预测方法。文中以1.2 MW风力发电系统为例,预测了网侧风电变流器中IGBT模块的寿命,并对比分析了是否考虑模块的退化状态对寿命预测结果的影响。     

环氧模塑封材料的热–机械疲劳失效分析

封装材料的热疲劳失效是封装器件失效的主要原因之一.对在微电子封装中应用很广的环氧模塑封装材料进行了常温和高温下的拉伸、疲劳实验.基于以疲劳模量作为损伤因子的疲劳寿命预测模型,相应的材料参数通过实验获得.并通过实验得出了该环氧模塑封装材料考虑温度影响的疲劳寿命预测模型,利用该模型可以对微电子封装用高聚物的疲劳寿命进行预测.     

多核相关向量机优化模型的锂电池剩余寿命预测方法

基于相关向量机的剩余寿命预测方法,核函数是影响相关向量机模型预测性能的重要因素.目前的相关向量机预测模型以单核为主,且核函数的选择存在较大主观性,导致所构建的预测模型性能有限.本文提出一种融合多个核函数构建相关向量机预测模型的方法,通过果蝇算法优化多个核函数优化组合的线性方程系数,提高了模型的预测性能,并将该方法应用于预测锂离子电池的循环剩余寿命.分别采用美国NASA和马里兰大学的电池退化数据集,对本文的方法进行了实验验证.实验结果表明：多核相关向量机预测方法的平均绝对误差和均方根误差都小于最优的单核相关向量机预测方法.     

航空、航天与航海工程

0021443“需求拉动式”航空器材需求预测与控制模式[刊,译,英]/吴桐水//南京航空航天大学学报(英文版).—2000,17(1).—78～83(E)提出了“需求拉动式”航空器材库存控制模式,建立了基于可靠性分析的航空器材需求预测模型。该模型通过对航空器材使用信息进行可靠性分析,得出零件可靠性寿命函数,并根据给定可靠度下的零件寿命预测航空器材需求时间。最后对视情维护下的周转件需求预测与库存控制进行了案例分析。参5     

靶场测控装备状态及故障预测方法

靶场测控装备的管控与状态预测对于确保靶场试验任务的顺利开展有着重要的意义,也是状态/故障处理研究领域的发展方向。结合装备结构关系网络,通过对状态信号的分析,给出了靶场测控设备单元的状态预测方法。依据电子元器件寿命规律,结合状态异常出现的分布函数,重点构建了离散型状态变量的预测模型,提出了相应的预测流程和方法。仿真计算表明,提出的状态及故障预测模型和方法有效,可为提高任务期间装备的可靠性提供判断依据。     

基于Elman神经网络模型的IGBT寿命预测

建立了Elman神经网络模型来实现绝缘栅双极型晶体管(IGBT)的寿命预测。分析了IGBT的结构及其失效原因,结合NASA埃姆斯中心的加速热老化试验数据,确定了以集电极-发射极关断电压尖峰峰值作为失效预测依据。利用高斯滤波的方法对试验数据进行预处理,构建了单、多隐层Elman神经网络寿命预测模型,并构建了广义回归神经网络(GRNN)寿命预测模型作为对比模型。采用均方误差、平均绝对误差、最大相对误差作为各模型预测性能的评估指标。结果表明,提出的Elman神经网络模型比GRNN模型有更好的预测效果。二隐层的Elman神经网络模型均方误差为0.202 0%,平均绝对误差为0.387 6%,最大相对误差为3.023 0%,可以更好地实现IGBT寿命的预测。     

90 nm NMOS器件TDDB击穿特性研究

采用恒定电压应力对90 nm NMOS器件进行了TDDB击穿的评价实验,深入研究了90 nm情况下TDDB的击穿机理,并对器件寿命进行预测和分析.结果表明,随着栅厚的不断减薄,E和1/E寿命预测模型不再适用.本文提出了一个器件寿命的修正模型,并按此模型对NMOS器件寿命进行预测,结果和实际值取得了很好的一致.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its