智能家居室内空气质量检测、评价与监控系统设计

针对室内空气质量越来越受人们的关注,提出基于ARM的智能家居室内空气质量检测、评价与监控系统设计方案。该系统由智能家居控制中心、室内空气质量检测装置、智能家居控制终端、客户端四个部分组成,智能家居控制中心与室内空气质量检测装置之间是基于串口的连接方式,与客户端之间是基于Internet连接方式,室内空气质量检测装置与智能家居控制终端是基于无线Wi-Fi的连接方式。该系统实现了智能家居室内空气质量检测、评价与监控,具有软硬件资源丰富、成本低、功耗小、便于升级和维护等优点,具有一定的实用价值。     

基于Raspberry Pi的智能家居系统设计

针对普通智能家居系统接口标准多、维护成本高、移动性差等缺点,提出一种基于Raspberry Pi嵌入式平台的智能家居系统设计方案。该系统由控制器、Web服务器、Web浏览器、APP移动终端和监控终端组成,采用ZigBee技术实现监控终端与控制器之间的通信。实验表明,该系统能使用户通过Web浏览器或手机APP终端实现对家居的远程监控,具备较好的应用价值。     

基于Android的远程控制系统设计

为实现对家庭智能设备的远程控制,文中提出了一种基于Android的远程控制系统。该系统采用Android手机作为控制终端,发送控制指令,经3G网络由集总控制器接收后进行解析,从而达到控制家居环境中各种智能设备的目的。控制系统采用了基于Socket的Java编程,实现了客户端和服务端之间的网络通信。实验证明,该控制系统可远程控制智能家居设备,且定位精确、响应迅速、应用范围广。     

基于Cortex和ZigBee的智能家居网关设计与实现

提出了基于Cortex-M3处理器和ZigBee技术的智能家居综合网关节点的设计实现方案,介绍了硬件设计以及软件开发流程.通过蓝牙、以太网、GPRS这3种通信方式实现智能家居无线网络与手机、电脑等控制终端之间有效、可靠的数据传输.     

基于Cortex-M3与A nd roid的智能家居控制系统设计

本文提出了一种基于Cortex-M3和Android的智能家居控制系统解决方案。方案采用Contex-M3为内核的ARM处理器,通过移植μC/OS-II操作系统和LwIP协议栈搭建智能家居嵌入式服务器。系统采用智能手机作为控制终端,设计基于Android的客户端应用程序。智能家居内部网络采用ZigBee无线传感网络技术进行搭建,最终实现通过手机对家居内部设备进行远程实时监控的目的。实验表明,该系统成本低廉,运行稳定,用户界面良好,能够满足一些家居对智能化的需求。     

基于Android手机的无线视频门禁系统应用研究

提出一种基于Android手机的视频门禁系统,具有灵活性好、功能丰富等优点.先从无线局域网通信方式和手机门禁终端两方面提出了系统方案特点,接着设计系统框架,并从视频数据采集与处理,服务器监控软件及Android手机客户端软件设计三方面对系统进行了详细设计,最后对Android客户端软件进行了简单测试.结果证明该方案可行,且运行稳定,有广泛的应用价值.     

基于WinCE移动终端的无线视频会议系统

文章给出了一种C/S架构的视频会议系统的设计与实现.该系统采用基于WinCE的嵌入式移动设备(如Pocket PC,PDA等)作为客户端,服务器采用IP组播方式通过WLAN向客户端发送会议数据,同时使用RTP实时传输协议以及DirectX等技术保证系统的有效实现.和传统的视频会议系统相比,基于WinCE移动终端的系统更具灵活性和移动性.     

基于ZigBee与Android技术的智能网关设计

为实现智能家居远程无线控制功能,设计了一种基于ZigBee与Android技术的智能网关方案。该方案是通过WiFi芯片ESP8266与TI公司的ZigBee芯片CC2530相结合,根据串口UART之间的数据透传功能,搭建ZigBee-WiFi智能网关,并将Android移动终端接入智能网关,实现对监测设备、家居照明、安防装置的远程控制和集中管理。实验结果表明,智能网关工作稳定、数据传输可靠,实现了移动终端的远程控制功能,并且具有良好的移植性和扩展性,能满足新型智能家居控制中心系统的要求,给用户带来智能、便捷、节能的居住环境。     

基于android和云平台的智能家居系统设计与实现

为解决智能家居系统大规模数据的存储、管理及移动终端的可靠接入等问题,本文设计了一种基于嵌入式家庭网关、Android和云平台服务的智能家居系统。利用极光云推送服务及时将家庭的异常报警信息推送到手机客户端,系统还提供了视频监控功能,用户随时随地通过手机查看家庭动态。当监测异常时会自动拍照记录异常场景,并上传至yeelink物联网云平台,进行图像云存储。另外通过手机客户端可以查看所选时间范围内的报警图像,随时掌控家庭生活。     

基于Internet的智能家居控制终端的设计与实现

通过Internet实现对智能家居的远程监控是当前技术研究的热点。为此分析智能家居系统的组成和结构,提出通过Internet对智能家居系统进行远程监控的方案,给出基于微控制器SX52的智能家居控制终端的硬件设计方案和实现方法,介绍控制终端软件实现的原理和流程,在对TCP/IP协议分析的基础上,阐述控制终端中协议处理的原理和实现方法。这些原理和方法对智能家居系统的设计具有参考价值。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its