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1.
Compact and wideband microstrip bandstop filter   总被引:3,自引:0,他引:3  
A novel one-section bandstop filter (BSF), which possesses the characteristics of compact size, wide bandwidth, and low insertion loss is proposed and fabricated. This bandstop filter was constructed by using single quarter-wavelength resonator with one section of anti-coupled lines with short circuits at one end. The attenuation-pole characteristics of this type of bandstop filters are investigated through TEM transmission-line model. Design procedures are clearly presented. The 3-dB bandwidth of the first stopband and insertion loss of the first passband of this BSF is from 2.3 GHz to 9.5 GHz and below 0.3 dB, respectively. There is good agreement between the simulated and experimental results.  相似文献   

2.
低通滤波器是通信系统中关键的器件之一,常作为选频器件用来抑制干扰信号和谐波信号,因此低通滤波器阻带带宽成为关键指标.常见的平面低通滤波器采用短截线(分支线)或高低阻抗线结构,这些结构的低通滤波器阻带不够宽,一般在截止频率的2倍频或3倍频处出现寄生通带.本文使用等效的T形节替代低通滤波器中的串联传输线的方式实现了带阻滤波器嵌入到低通滤波器内部,既对低通滤波器的阻带上任意频段出现的寄生通带进行了抑制,又不影响低通滤波器的通带内性能,并给出等效T形节的综合设计公式.此结构综合设计方法严谨简单、易于平面电路实现,制作出来改进的低通滤波器对3倍频寄生通带进行抑制,扩宽了阻带带宽到4个倍频程以上,测试结果:通带带宽0~3GHz,通带插入损耗小于0.5dB,带外抑制3.6~12GHz大于60dB.  相似文献   

3.
摘 要:为实现结构紧凑和高选择性的宽带滤波器,在传统平行耦合线结构的基础上,作了适当改进,设计了三种结构新颖的三线耦合结构,均能够实现具有三个传输零点的宽带响应,且其中两个零点分别紧靠通带的上下边缘。加工并测试了基于其中一种结构的宽带滤波器,工作频率为2.6GHz,3dB相对带宽为63%,三个传输零点分别位于1.46GHz,3.77GHz和5.13GHz,介质基板采用Rogers 4003,厚度0.813mm。实测结果与仿真结果吻合良好,验证了结构的有效性。  相似文献   

4.
A new type of low-pass filter based on a coupled line and transmission line theory is proposed for suppressing harmonics and spurious frequency. The seventh-order coupled-line low-pass filter with strip line configuration was fabricated using a high-temperature superconducting (HTS) thin film on MgO(100) substrate. The seventh-order low-pass filter has five attenuation poles in the stop band. Its cutoff frequency is 1 GHz with a 0.01-dB ripple level. The fabricated filter exhibits a characteristic stop band in the range from 1 to 7 GHz. A measured insertion loss at the pass-band of the HTS low-pass filter is 0.2 dB at 77 K, while the maximum return loss is 17.1 dB. These results match well with those obtained by the EM simulation. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range, and low insertion loss  相似文献   

5.
40-GHz coplanar waveguide bandpass filters on silicon substrate   总被引:3,自引:0,他引:3  
We report a very simple process to fabricate high performance filter on Si at 40 GHz using proton implantation. The filter has only -3.4-dB loss at peak transmission of 40 GHz with a broad 9-GHz bandwidth. In sharp contrast, the filter on 1.5-/spl mu/m SiO/sub 2/ isolated Si has much worse transmission and reflection loss. This is the first demonstration of high performance filter at the millimeter-wave regime on Si with process compatible with current VLSI technology.  相似文献   

6.
This letter presents the design and implementation of a 70 GHz millimeter-wave compact folded loop dual-mode on-chip bandpass filter (BPF) using a 0.18 $mu$m standard CMOS process. A compact BPF, consisting of such a planar ring resonator structure having dual transmission zeros was fabricated and designed. The size of the designed filter is 650$,times,$ 670 $mu$ m$^{2}$ . Calculated circuit model, EM simulated and measured results of the proposed filter operating at 70 GHz are shown in a good agreement and have good performance. The filter has a 3-dB bandwidth of about 18 GHz at the center frequency of 70 GHz. The measured insertion loss of the passband is about 3.6 dB and the return loss is better than 10 dB within the passband.   相似文献   

7.
A coplanar waveguide (CPW)-slotline bandpass filter is described. The circuit allows planar integration of active and passive semiconductor devices both in series and in shunt. A microstrip-to-slotline transition designed to test the filter is also described. Two of the transitions exhibit an insertion loss of less than 1.0 dB over the 2.0-4.0-GHz range. A three-section CPW-slotline bandpass filter demonstrates an insertion loss of less than 0.2 dB over the passband centered at 2.9 GHz. A three-section CPW-slotline switchable bandpass filter integrated with three p-i-n diodes is discussed. It has a 0.7-dB insertion loss in the passband when the p-i-n diodes are off and a 25.0-dB isolation across the entire band when the p-i-n diodes are on. A three-section CPW-slotline varactor-tunable filter integrated with three varactor diodes is presented, showing a 2.0-dB insertion loss and over 20% electronic tuning range. Simple transmission line circuit models are used to optimize the design  相似文献   

8.
9.
An analysis of the frequency response of interdigital capacitors, which leads to an optimal design, is given along with an expression for their static gap capacitance. The capacitor Q is given in terms of its geometry which consists of a planar interdigital thin-filrn conductor deposited on the surface of a relatively high dielectric constant substrate. Capacitance values ranging from 0.1 to 10 pF at L band with measured Q's in excess of 400 are realizable using 2-mil line and space widths on a 99.5-percent alumina substrate with a dielectric constant of 10.3. Experimental results obtained with a lumped-constant nine-section S-band Chebyscheff low-pass filter realized using spiral inductors and optimal designed interdigital capacitors are shown to be in excellent agreement with theory. The filter had less than 0.8-dB insertion loss and greater than 25dB return loss in the passband. The filter occupies an area 6.50 by 200 roils on a 24-mil-thick substrate.  相似文献   

10.
To produce a filter small enough to fit a 2-in wafer in the very high frequency (VHF) band while avoiding parasitic cross coupling among nonadjacent resonators, a novel quasi-lumped element resonator with interdigital capacitor, double-spiral inductor, and pad capacitor have been introduced. This resonator has not only a highly miniature structure but also a very weak far-field radiation. A ten-pole quasi-elliptic filter with group-delay equalization, which has a 7.1-MHz 1-dB passband and a center frequency of 257.5 MHz, is designed and fabricated on a 37.3 x mm x 30.1 x mm x 0.5 x mm LaAlO3 substrate. The measured results showed a 0.24-dB insertion loss, a 15-dB return loss, and a 70-dB out-of-band rejection. Moreover, the group delay variation is less than 50 ns over 70% of the 1-dB passband and the band where the phase error ripple is within plusmn5deg is more than 80% of the 1-dB passband. The overall experimental performance showed excellent agreement with the theory and simulation, which is a good proof of the advantage of our weak far-field radiation resonator. The result showed that the novel resonator is very suitable to fabricate narrowband ultrahigh frequency, VHF, or even lower frequency high-temperature superconductor filters on a 2-in wafer.  相似文献   

11.
In this letter, a miniaturized planar two-pole microwave filter with two transmission zeros is presented. The building block of this filter is a high-Q double spiral slot resonator backed by a conductor plane. The provision of a float back conductor plane allows vertical integration of this filter with other passive and active RF electronic components usually found in miniaturized wireless transceivers. The conductor plane also provides a coupling mechanism between the input and output of the filter giving rise to transmission zeros. It is shown that the location of transmission zeros can easily be adjusted and significant out-of-band rejection be achieved using only two miniaturized double-spiral resonators. The design procedure and fabrication of a two-pole filter operating at 2.11GHz is demonstrated and a very good agreement between measured and simulated results is shown  相似文献   

12.
This letter proposes a wideband bandpass filter by cascading two 3-dB stepped-impedance cascadable 180deg hybrid rings with a pair of stepped-impedance lines. Thanks to the stepped-impedance lines, a broad upper stopband is achieved. The stepped-impedance vertically installed planar (VIP) coupler is used to implement the ideal 180deg phase inverter and crossovers. The experimental results show that this 2-GHz center frequency, fourth order filter has a 10-dB return loss bandwidth of 92.5% and upper stopband rejection levels of better than -20 dB up to 6.8 GHz. This proposed filter achieves wide passband and broad stopband performance simultaneously.  相似文献   

13.
Two highly compact tunable stopband filters using microstrip transmission lines coupled with split ring resonators (SRRs) and varactor diodes are presented. Frequency or bandwidth tuning capability of each device is demonstrated. The frequency tunable filter, realized by a single stage, shows a wide tuning range of 19.8% with a maximum bandwidth of 5% and an insertion loss of approximately 20 dB at 4 GHz. The bandwidth tunable filter, realized by double stages, shows a 10-dB bandwidth of 19–34% with a biasing voltage of 0–10 V. The implemented frequency tuning and bandwidth tuning devices show a significant area reduction of 60.1% and 53.5%, respectively, in comparison with a similar frequency or bandwidth tunable structure presented by others. Equivalent circuit models are presented. The measured S-parameters are in good agreement with simulated ones.  相似文献   

14.
采用平面双模谐振器设计了一款新颖的具有小中心频率比的紧凑型双频带滤波器。该滤波器的两个工作频段的中心频率分别为5G WiFi的两个有用频段5.2 GHz和5.8 GHz,中心频率比为1:1.1。实现了具有四个传输零点的双通带响应,其中位于两个频带中间的两个传输零点由谐振器自身产生,很好地抑制了通带间的无用频段。另外两个传输零点由源负载耦合结构产生。加工并测试了该滤波器,两个通带的3 dB相对带宽为5.8%和5.2%,通带内的插入损耗小于0.8 dB,四个传输零点分别位4.52, 5.50,5.50和6.50 GHz,实验和仿真结果吻合,验证了结构的有效性。  相似文献   

15.
In this paper, the authors propose a novel and compact 50-70 GHz planar microstrip bandpass filter, possessing sharp-rejection, low insertion-loss and wide-band characteristics, based on Liquid Crystal Polymer (LCP) substrates. The filter is fabricated on LCP substrates by using standard processing technologies. The proposed filter exhibits a return loss level better than 10 dB, an insertion loss of 5 dB and a 3-dB bandwidth of 30%.The measured and simulated results show good agreement, proving that LCPs are potential and very promising materials for flexible millimeter-wave substrate applications.  相似文献   

16.
A number of passive and active devices using dielectric waveguides have been developed and find various applications in integrated circuits at the millimeter optical-frequency range. The design, theoretical considerations and experimental findings of a periodic branching filter using rectangular dielectric waveguides are described in this paper. Low insertion loss for the periodic branching filter with 850-MHz 3-dB bandwidth, less than 1.0 dB, is achieved in the frequency range from 77 to 85 GHz. Measured results are in good agreement with theoretical calculations.  相似文献   

17.
In this paper, a novel compact wide-band bandpass filter (BPF) with a wide frequency range is presented. This filter consisting of a multi-mode resonator (MMR) and four metamaterial unit-cells benefits from a very compact size. Unit-cells based on a complementary spiral resonator (CSR) including a metallic via, improve both upper and lower stopband rejection and compensate the insertion loss (I.L) within the passband altogether. This wide-band filter presents a 3-dB bandwidth of 7.7 GHz, ranging from 3 GHz to 10.7 GHz and the Insertion loss is less than 0.7 dB over the passband. The measured results are in good agreement with both the full-wave electromagnetic simulation and the proposed circuit model results. The dimension of the fabricated filter is 0.128 λ × 0.1 λ (i.e., 5.6 × 4.4 mm2). This filter is considerably compact compared to the other wide-band bandpass filters with the same substrate.  相似文献   

18.
New types of planar transmission lines employing multilayer structures are proposed for possible applications in microwave and millimeter-wave integrated circuits. Detailed investigations are presented through numerical results calculated using the spectral domain technique. The newly proposed transmission lines have many attractive features such as a large impedance range, flexibility and ability to realize complicated, densely packed integrated circuits, as well as miniaturization through the use of thin dielectric layers. Additionally, they possess all of the inherent advantages of the CPW and microstrip line. Their use in microwave circuits is exemplified through a low-pass filter realized using the new slot-coplanar lines with less than 0.5-dB insertion loss and better than 20-dB return loss. The filter's measured and calculated performances also agree well  相似文献   

19.
This paper describes the development and characterization of a new class of Si-micromachined lines and circuit components for operation between 2-110 GHz. In these lines, which are a finite-ground coplanar-waveguide (FGC) type, Si micromachining is used to remove the dielectric material from the aperture regions in an effort to reduce dispersion and minimize propagation loss. Measured results have shown a considerable loss reduction to levels that compare favorably with those of membrane lines and rectangular waveguides. Micromachined FGC lines have been used to develop V- and W-band bandpass filters. The W-band micromachined FGC filter has shown a 0.8-dB improvement in insertion loss at 94 GHz over a conventional FGC line. This approach offers an excellent alternative to the membrane technology, exhibiting very low loss, no dispersion, and mode-free operation without using membranes to support the interconnect structure  相似文献   

20.
This paper describes micromachined, membrane-supported low-pass and bandpass filters which are suitable for microwave and millimeter-wave (MM-wave) application. The designs are realized in coplanar-waveguide (CPW) form using short- and open-end series stubs with integrated metal-insulator-metal (MIM) capacitors, and are compact in lateral and longitudinal dimensions. A computationally efficient analysis has been developed for the design and characterization of the filters. The technique is based on a quasi-static coupled-line (CL) treatment of the series stubs, and uses normal mode impedance parameters, which are calculated with the spectral-domain approach (SDA). Due to the broad TEM-bandwidth of the membrane-supported transmission lines, the method can accurately predict filter responses well into the rejection band. To demonstrate the above claims, the measured and simulated S-parameters of a 0.3 mm ×2.2 mm low-pass filter with a cutoff frequency at 17 GHz, and a second passband at 115 GHz, are presented. The new approach is also used in the design of bandpass filters which exhibit 1.5-2-dB insertion loss and bandwidths around 10%  相似文献   

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