具有时间延迟积分（TDI）功能的288×4红外焦平面读出电路

提出了一种具有TDI功能的288×4扫描型红外焦平面读出电路。分析了TDI的工作原理及电路实现,给出了本类电路TDI功能的测试方法。实现了支持积分同时读出（IWR）的相关双采样（CDS）及其可测性设计。提出了一种大规模扫描型焦平面读出电路的低功耗设计方案。本文的设计结果经过了流片验证。     

基于像素累积积分的红外读出电路研究

像素累积积分(PA)与时间延迟积分(TDI)是应用较多的红外读出电路积分技术。TDI应用于扫描型焦平面,PA应用于凝视型焦平面。介绍了TDI的原理和作用,分析了PA的原理和电路实现。通过理论分析和仿真显示PA可以增强读出电路的信噪比和电荷存储容量。     

红外焦平面CMOS读出电路TDI功能的测试方法研究

给出了一种新颖的红外焦平面CMOS读出电路TDI功能的测试方法.该方法通过在电测试MOS场效应晶体管栅极施加不同波形的方波激励信号,观察输出电压波形的对应变化,验证TDI功能的信号延迟和累加操作是否正确.应用该方法实际测试了一款TDI型红外焦平面CMOS读出电路,各种激励模式下测试得到的输出波形均与预计的理想输出波形吻合,证明该测试方法可行,且简单、直观、有普适性.     

线列TDI型红外焦平面读出电路低功耗设计

摘要：基于对具有TDI功能的红外线列读出电路工作原理的分析,通过改变电路的工作电流及工作时间进行低功耗设计,最后分别对优化前后的读出电路进行直流仿真,仿真结果显示优化后读出电路功耗较原始电路降低了49.5%,验证了低功耗设计方案的可行性。     

一种应用于线列TDI型红外焦平面的数字化读出电路

对于红外焦平面的数字化一直是当前的研究热点之一,如何满足红外焦平面器件的功耗和面积要求,同时还能达到足够高的转换速率和转换精度是目前存在的一个的难点。针对线列TDI型红外焦平面的特点,提出一种新型SAR型ADC的方法并设计相应的读出电路,通过在SMIC 0.18μm工艺下模型的仿真,该读出电路可以达到最高80.2 dB的信噪比的情况下,功耗仅为230μW。     

一种降低寄生电容影响的64×4红外焦平面读出电路

本文提出了一种64×4扫描型红外焦平面读出电路。电路采用0.5μm标准CMOS工艺。工作电压为5V。本设计在列读出级采用了降低寄生电容影响的设计,以降低电路输出相对无寄生电容设计输出值的偏差,提高各通道的一致性。在对具有4级TDI、微扫描步长为探测器中心间距1/3的读出电路列暂存级进行的仿真中,相对于改进前的普通电路结构,本文提出的新型电路结构与设计理想值之间的偏差降为原来的10%。     

一种降低寄生电容影响的64×4红外焦平面读出电路

本文提出了一种64×4扫描型红外焦平面读出电路。电路采用0．5μm标准CMOS工艺。工作电压为5V。本设计在列读出级采用了降低寄生电容影响的设计,以降低电路输出相对无寄生电容设计输出值的偏差,提高各通道的一致性。在对具有4级TDI、微扫描步长为探测器中心间距1/3的读出电路列暂存级进行的仿真中,相对于改进前的普通电路结构,本文提出的新型电路结构与设计理想值之间的偏差降为原来的10%。     

一种高灵敏度数字化TDI型红外焦平面读出电路

数字化红外焦平面探测技术作为第三代红外焦平面技术成为近年来被研究的热点。本文提出了一种将像素级数字化技术与TDI技术相结合的红外焦平面读出电路,使得电路实现大动态范围的同时满足低功耗设计。文中在0.18μmCMOS工艺模型下,对电路进行设计仿真,该读出电路电荷处理能力可达到5.04Ge-,动态范围最高达到101.5dB,在典型长波积分电流应用下电路功耗仅95.8mW。     

8×4元TDI光导型HgCdTe红外焦平面组件的研制

介绍了8×4元时间延迟积分(TDI)光导型HgCdTe红外焦平面的工作原理,给出了组件结构、读出电路的电气结构图、时序驱动波形图.针对组件结构,阐明了组件电路的设计原则、提高动态范围的关键技术,最后讨论了组件存在的一些问题以及今后努力的方向.     

高性能TDI扫描式红外传感器读出电路研究

扫描式红外成像传感器在遥测遥感、卫星成像等远距离成像领域具有广泛的应用。为了缓解信噪比相对较低而影响图像质量的问题,提出了一种时间延时积分(TDI)型读出电路。该读出电路由电容跨阻放大器(CTIA)像素电路阵列、并行TDI电路、多路开关选择电路和输出缓冲器等组成。为实现对宽动态范围光电流的处理,CTIA电路设计有多档可选增益,且非线性度小于0.3%。该读出电路采用0.35 μm CMOS工艺设计与制造,芯片面积约为1.3 mm×20 mm,采用5 V电源时功耗小于60 mW。为了评估1024×3 TDI读出电路的功能,采用了对TDI输入端注入不同电压激励的方式进行测试,测试结果验证了所提出的设计方案。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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