Development of an integrated high speed silicon PIN photodiodesensor

A silicon integrated PIN photodiode sensor, combined with a bipolar IC on same substrate (that is, a PIN photo integrated circuit sensor: PIN-PICS), was developed by employing a high resistive P^-- epitaxial layer on a P⁺ substrate for creating a high speed and high optical responsivity PIN photodiode. We fabricated this device based on two special techniques: (1) the PIN photodiode is formed on a P^--/P⁺ substrate structure and isolated from bipolar components by the combination of a P^--well and a trench isolation, and (2) bipolar components are formed by the doubly diffused buried layer of the P^--well and the N⁺ collector wall. All of these components, such as npn and pnp transistors, were arranged within the lightly doped P^--well regions. From several kinds of trial samples, the following results were obtained. The PIN photodiode with 0.145 mm² active area indicated 680 MHz for cutoff frequency at 10 V bias with 830 mn radiation. In the case of 20 V bias, this value exceeded 1.5 GHz. This PIN-PICS was applied to a 10 Mbit/s burst mode compatible optical monolithic receiver and a transimpedance amplifier, and it has shown the expected results     

Switchable Embedded Notch Structure for UWB Bandpass Filter

A reconfigurable ultra-wideband (UWB) bandpass filter (BPF) with switchable notch for UWB system is presented. The UWB BPF is embedded with two identical switchable notch structures, in which PIN diodes are used for electronic switching. A bias circuit for UWB applications was investigated and designed to control the state of PIN diodes in order to activate or deactivate the notch without an affect on the response of the BPF. A demonstrator for this type of switchable notch UWB filter is designed and fabricated. Simulated and measured results are described.      

State variable modeling of the power pin diode using an explicitapproximation of semiconductor device equations: a novel approach

The concepts of state variable modeling have been applied to obtain a general circuit like model for the power PIN diode. The main aim of this paper is to demonstrate the feasibility of the state variable modeling approach for the PIN diode. From simplified semiconductor device differential equations, the model is built with the corresponding variational equation using an internal approximation. With a special choice of the decomposition functional basis of such internal approximation, it was possible to get efficient and reliable models for the reverse recovery. A simple model of three state variables that has only six parameters, most of which are technological, represented a major improvement in describing circuit/device waveforms during reverse recovery     

一种硅光电接收处理集成电路的技术研究

介绍了一种在硅衬底上集成光电二极管探测器和双极接收放大处理电路的单芯片光电集成电路OEIC。从理论上阐述了光电器件实现的原理;为实现光电探测二极管与单片双极集成电路的兼容,设计了光电探测器的专用结构,并研制了光电探测器的专用模型。对接收处理电路进行了模拟仿真和优化设计。建立了与双极工艺兼容的制作光电二极管探测器的专用工艺;采用该工艺,对光电器件进行了版图设计、工艺制作和测试研究,给出了初步试验的方法和结果。     

PIN光电探测器等效电路模型研究

本文给出一个新的PIN光电二极管的等效电路模型，该模型基于速率方程和微波端口特性并在TMS（TsinghuaMicrowaveSpice）中完成，可以进行线性、非线性信号分析和噪声分析。利用该模型对其非线性谐波特性进行了预测，模拟结果表明和文献数值求解结果基本一致，最后讨论了适用于金属－半导体－金属（MSM）光电二极管的修正模型．     

Analysis of high speed p-i-n photodiode S-parameters by a novel small-signal equivalent circuit model

A novel small-signal radio frequency (RF) equivalent-circuit of the side-illuminated input tapered waveguide-integrated p-i-n photodiodes (WG PIN PD) is proposed. The proposed RF equivalent-circuit involves both the carrier-transit effect and the external resistance-capacitance (RC) time constant limitation on the frequency response of the p-i-n PD. The carrier-transit effect is realized by adding an RC circuit to an ideal voltage-controlled current source as the input opto-RF equivalent circuit. The carrier transit-time effect is equivalently represented by the time-constant of this input RC circuit. This new equivalent circuit model fits well with both the measured reflection and optoelectronic conversion parameters of the WG PIN PD in a broad frequency range from 45 MHz to 50 GHz.     

PIN开关速度仿真

高速PIN开关在通信、雷达和电子对抗系统中有着广泛的应用,然而在设计PIN开关电路时却不能通过仿真准确地得出其开关速度。提出一种新的PIN管开关速度的仿真方法,根据PIN二极管开关导通与关断时刻内部各个PIN管的状态作为判定依据,可以准确仿真计算开关的导通与截止时间。采用Strllo提出的PIN管瞬态模型进行仿真,计算结果与实际测试结果相符。该方法可准确地仿真PIN开关速度,也可以用于其他半导体控制电路的开关时间仿真。     

RF model of flexible microwave single-crystalline silicon nanomembrane PIN diodes on plastic substrate

This paper reports the realization and RF modeling of flexible microwave P-type-Intrinsic-N-type (PIN) diodes using transferrable single-crystalline Si nanomembranes (SiNMs) that are monolithically integrated on low-cost, flexible plastic substrates. With high-energy, high-dose ion implantation and high-temperature annealing before nanomembrane release and transfer process, the parasitic parameters (i.e. resistance, inductance, etc.) are effectively reduced, and the flexible PIN diodes achieve good high-frequency response. With consideration of the flexible device fabrication, structure and layout configuration, a RF model of the microwave single-crystalline Si nanomembrane PIN diodes on plastic substrate is presented. The RF/microwave equivalent circuit model achieves good agreement with the experimental results of the single-crystalline SiNM PIN diodes with different diode areas, and reveals the most influential factors to flexible diode characteristics. The study provides guidelines for properly designing and using single-crystalline SiNMs for flexible RF/microwave diodes and demonstrates the great possibility of flexible monolithic microwave integrated systems.     

C波段GaAs PIN二极管单片单刀单掷开关

基于中国科学院微电子研究所的GaAs PIN二极管工艺,研究了一种单片单刀单掷开关.为了仿真该单片单刀单掷开关,研制开发了GaAs PIN二极管的小信号模型.在5.5～7.5GHz的频段内,开关正向导通时的插入损耗低于1.6dB,回波损耗大于10dB,开关关断状态的隔离度大于23dB.     

C波段GaAs PIN二极管单片单刀单掷开关

基于中国科学院微电子研究所的GaAs PIN二极管工艺,研究了一种单片单刀单掷开关.为了仿真该单片单刀单掷开关,研制开发了GaAs PIN二极管的小信号模型.在5.5～7.5GHz的频段内,开关正向导通时的插入损耗低于1.6dB,回波损耗大于10dB,开关关断状态的隔离度大于23dB.