背板掺杂与窗口位置对SELBOX器件调控研究

介绍了一种采用HK-first MG-last FDSOI工艺制作的选择性埋氧(SELBOX)器件。利用TCAD,对不同背板掺杂类型和埋氧层窗口位置的SELBOX器件进行直流仿真分析,再与FDSOI器件的直流参数进行比对,得到SELBOX器件的直流性能对背板掺杂类型和埋氧层窗口位置的依赖关系。进一步分析SELBOX器件的下表面电势分布,发现背板掺杂类型和埋氧层窗口位置对器件直流性能的物理调控机制。仿真结果表明,背板掺杂类型决定SELBOX器件的直流性能能否得到增强,埋氧层窗口位置与漏端的距离决定器件直流性能增强的程度。     

新型SON器件的自加热效应

分析了自加热效应对SON器件性能的影响,并与SOI器件进行了比较.提出构造散热通路的方法来抑制SON器件的自加热效应,分析了不同通路情况对自加热效应的抑制程度.还对散热性能较好的具有不连续空洞埋层的SON器件进行了研究,并分析了空洞大小和横向位置偏差对器件性能的影响,为器件结构设计提供了指导.     

新型SON器件的自加热效应

分析了自加热效应对SON器件性能的影响,并与SOI器件进行了比较．提出构造散热通路的方法来抑制SON器件的自加热效应,分析了不同通路情况对自加热效应的抑制程度．还对散热性能较好的具有不连续空洞埋层的SON器件进行了研究,并分析了空洞大小和横向位置偏差对器件性能的影响,为器件结构设计提供了指导．     

不同掺杂位置对双层异质结OLEDs性能的影响

通过在双层异质结有机电致发光器件（OLEDs）ITO／N，N＇-Diphenyl—N，N’-bis（1-naphthyl）（1，1’-biphenyl）。4，4＇-diamine（NPB）／tri-（8-hydroxyquinoline）-aluminum（Alq3）／Mg：Ag发光层Alq3中的不同位置掺杂红色荧光材料4-（dicyanomethylene）-2-t-butyl-6-（1，1，7，7-tetramcthyljulolidyl-9-enyl）-4H-pyran（DCJTB），研究了该类器件中载流子的输运过程、复合位置及能量传递机理。实验结果表明，掺杂剂对于载流子有较强的俘获能力，并影响器件的载流子输运过程以及电流机制；掺杂位置的不同导致器件发光性能发生很大变化，而当掺杂层位于有机／阴极金属界面时还起到阴极电子注入缓冲层的作用。     

异质结位置对缓变集电结SiGe HBT性能的影响

研究了npn型SiGe HBT集电结附近的异质结位置对器件性能的影响.采用Taurus-Medici 2D器件模拟软件,在渐变集电结SiGe HBT的杂质分布不变的情况下,模拟了各种异质结位置时的器件直流增益特性和频率特性.同时比较了处于不同集电结偏压下的直流增益和截止频率.分析发现即使没有出现导带势垒,器件的直流和高频特性仍受SiGe层中性基区边界位置的影响.模拟结果对SiGe HBT的设计和分析都具有实际意义.     

光电位置敏感器件背景光补偿的研究

光电位置敏感器件(PSD)是一种可直接对其光敏面上光斑位置进行检测的光电器件，基于光电位置敏感器件可以构成多种非接触的高精度动态位移监测仪器。根据光电位置敏感器件的原理及特征方程，分析了存在背景光时它的输出信号是非线性的。提出～种基于神经网络的光电位置敏感器件背景光非线性补偿方法。利用神经网络具有逼近任意非线性函数的特点．通过训练使神经网络建立在不同背景光下光电位置敏感器件输出与其标准值之间的非线性映射关系，对其实现全程跟踪补偿。计算机仿真表明，该方法能有效地消除背景光的影响，在神经网络的输出端得到期望的线性输出。     

STC控制位置的计算与选取

分析了STC加在雷达接收机前端不同位置对整机灵敏度的影响，并就最大回波强度及器件1dB压缩点的功率，提出了受控器件所放最佳位置的计算方法。     

异质结位置对缓变集电结SiGe HBT性能的影响

研究了npn型SiGe HBT集电结附近的异质结位置对器件性能的影响.采用Taurus-Medici 2D器件模拟软件,在渐变集电结SiGe HBT的杂质分布不变的情况下,模拟了各种异质结位置时的器件直流增益特性和频率特性.同时比较了处于不同集电结偏压下的直流增益和截止频率.分析发现即使没有出现导带势垒,器件的直流和高频特性仍受SiGe层中性基区边界位置的影响.模拟结果对SiGe HBT的设计和分析都具有实际意义.     

声表面波后工序环节对器件可靠性影响的研究

报道了声表面波（SAW）后工艺环节对基片粘接剂的固化程度、不同制作条件、不同封帽环境制作的滤波器，通过在高温、负温以及高温加速老化后的器件性能变化，来研究SAW器件的可靠性。结果表明：器件的插入损耗随老化时间逐渐增加；器件插入损耗的稳定性明显依赖于封装的湿度和器件表面的状态；器件的气密性随老化时间，器件的老化会更明显。结论是：器件必须要在清洁（净化）的环境中制作，清洁的器件表面第一重要；干燥的封装是器件性能稳定的重要条件；器件、组件老化到一定程度后，将不会有较大的性能变坏现象出现。这些研究成果，对防止或控制高性能器件失效、提高SAW器件可靠性将具有指导意义。     

用局域寿命控制技术改善功率快恢复二极管性能的仿真研究

针对局域低寿命区的参数对快恢复硅功率二极管性能的影响进行了系统的仿真研究,得到了全面系统的研究结果,其中包括局域低寿命区在二极管中的位置不同和局域低寿命区中复合中心能级在禁带中的位置不同对快恢复二极管的反向恢复时间(trr)、反向恢复软度因子(S)、正向压降(VF)、漏电流(IR)等各个单项性能的影响,以及对trr-S、trr-VF和trr-IR等各项性能综合折衷的影响.这些结果对高速功率器件寿命工程研究和器件制造工程都有重要的参考价值.     

双层侧向位置敏感探测器的畸变研究

阐述了半导体光电位置敏感器件双层结构、特点,在此基础上,利用三层前置反馈网络对光电位置敏感器件的空间非线性以及畸变产生的机理进行了分析,尤其是对在位置敏感器件边缘的非线性作了分析研究;提出了一种适于位置敏感器件的敏感前置放大器电路和产生双极脉冲的分光滤波器;通过实验模拟,验证了上述理论和方法的正确性,并对双层结构的位置敏感器件在精密探测中的应用作了展望。     

用蒙特卡罗法研究高散射介质中的成像

用蒙特卡罗方法模拟了均匀介质中含有散射系数和吸收系数不同的物体时 ,物体的位置和大小对表面漫射强度时间响应函数的影响 ;在频率域分析了用幅度差和相位差成像时 ,物体位置和大小对成像质量的影响。结果表明相位的探测比幅度的探测灵敏 ,高频探测比低频探测灵敏 ;物体与光源的几何位置影响物体的像质 ,光源与物体共线时成像最灵敏 ,横向位置变化比纵向位置变化影响大 ;物体越大 ,成像效果越好 ,物体小到一定程度时 ,对幅度和相位的影响超出系统的探测能力 ,这决定成像系统的分辨率 ,它是诸多因素的综合     

Reinventing Butyl Rubber for Stretchable Electronics

The development of stretchable electronic devices that are soft and conformable has relied heavily on a single material—polydimethylsiloxane—as the elastomeric substrate. Although polydimethylsiloxane has a number of advantageous characteristics, its high gas permeability is detrimental to stretchable devices that use materials sensitive to oxygen and water vapor, such as organic semiconductors and oxidizable metals. Failing to protect these materials from atmosphere‐induced decomposition leads to premature device failure; therefore, it is imperative to develop elastomers with gas barrier properties that enable stretchable electronics with practical lifetimes. Here, butyl rubber—a material with an intrinsically low gas permeability traditionally used in the innerliners of tires to maintain air pressure—is reinvented for stretchable electronics. This new material is smooth and optically transparent, possesses the low gas permeability typical of butyl rubber, and vastly outperforms polydimethylsiloxane as an encapsulating barrier to prevent the atmospheric degradation of sensitive electronic materials and the premature failure of functioning organic devices. The merits of transparent butyl rubber presented here position this material as an important counterpart to polydimethylsiloxane that will enable future generation stretchable electronics.     

Reliability of MEMS shallow arches based actuator under the combined effect of mechanical shock and electric loads

Critical issues for the development of MEMS devices are their performance, reliability and survivability when subjected to unwanted loads, such as when dropped on a hard surface. These active forces can lead to tremendous destruction in these tiny mechanisms, such as stiction and all related short circuit problems in MEMS devices. Investigating the reliability of micro-structures under mechanical shock loads is a challenging job, driven, in part, by the large deflections that exacerbate system nonlinearities, such as those due to geometric (such as mid-plane stretching) and also the actuating nonlinear electric load. The proposed work aims to establish computationally efficient approaches that are capable of analyzing the transient dynamics of bi-stable MEMS devices, such as shallow arches, to mechanical shock and electric loadings. This investigation aims to improve the understanding of how mechanical shock loads can deteriorate the bi-stability of MEMS shallow arches. To this end, a Galerkin expansion reduced-order modeling (ROM) will be exploited. The capability of the ROM in simulating the bi-stable dynamical response of such devices to the combined effect of electrostatic force and shock load is thoroughly studied and analyzed. The ROM is utilized to explore the effect of several design parameters on the dynamic response of initially curved microbeams to shock loads: such as the shock amplitude, the shock duration, the beam initial curvature, and the DC voltage. Universal curves for the snap-through and pull-in voltages thresholds versus shock amplitude for various values of the nondimensional design constraints of the ROM are generated. These curves will present valuable information about the interaction between the shock and electrostatic forces and how to utilize this interaction to build new devices and propose new technologies.     

Investigation of the threshold voltage of MOSFETs with position and potential-dependent interface trap distributions using a fixed-pointiteration method

Simulation results are presented for a MOSFET with position- and energy- (potential-) dependent interface trap distributions that may be typical for devices subjected to interface-trap-producing processes such as hot-electron degradation. The interface-trap distribution is modeled as a Gaussian peak at a given position along the channel, and the energy dependence is derived from C-V measurements from an MOS capacitor exposed to ionizing radiation. A novel fixed-point technique is used to solve the two-dimensional boundary-value problem. The technique is shown to be globally convergent for arbitrary distributions of interface traps. A comparison of the convergence properties of the Newton and fixed-point methods is presented, and it is shown that for some important cases the Newton technique fails to converge while the fixed-point technique converges with a geometric convergence rate     

Robust control of a planar manipulator for flexible and contactless handling

Many industries require non-contact and flexible manipulation systems, such as magnetic or pneumatic devices. In this paper, we describe a one-degree-of-freedom position control of an induced-air flow surface. This device allows to convey objects on an air cushion using an original aerodynamic traction principle. A model of the system is established and the parameters are identified experimentally. A H_∞ robust controller is designed and implemented on the device in order to control the object position. Experiments with objects of various dimensions and materials are conducted and showed the robustness capabilities of the controller.     

几种新型的光电器件

描述用ＳＯＩ技术制造的光耦合ＭＯＳ继电器和多量子阱长波和红外探测器，以及集成异质结晶体管和激光二管于一体的高增益，高灵敏的光电子开关器件，文中着重介绍这些器件的结构，制造工和器件特性，并对其进行了讨论。     

SALA: Smartphone-Assisted Localization Algorithm for Positioning Indoor IoT Devices

This paper proposes a Smartphone-Assisted Localization Algorithm (SALA) for the localization of Internet of Things (IoT) devices that are placed in indoor environments (e.g., smart home, smart office, smart mall, and smart factory). This SALA allows a smartphone to visually display the positions of IoT devices in indoor environments for the easy management of IoT devices, such as remote-control and monitoring. A smartphone plays a role of a mobile beacon that tracks its own position indoors by a sensor-fusion method with its motion sensors, such as accelerometer, gyroscope, and magnetometer. While moving around indoor, the smartphone periodically broadcasts short-distance beacon messages and collects the response messages from neighboring IoT devices. The response messages contains IoT device information. The smartphone stores the IoT device information in the response messages along with the message’s signal strength and its position into a dedicated server (e.g., home gateway) for the localization. These stored trace data are processed offline through our localization algorithm along with a given indoor layout, such as apartment layout. Through simulations, it is shown that our SALA can effectively localize IoT devices in an apartment with position errors less than 20 cm in a realistic apartment setting.     

位敏器件及在微小位移测量中的应用

介绍了半导体位敏器件的原理及特点，光切法测量微小位移原理以及利用ＰＳＤ的光切法测量的有关光路和信号处理电路。该装置可实现对金属及非金属表面位移的非接触测量。     

Flash‐Assisted Processing of Highly Conductive Zinc Oxide Electrodes from Water

Fabricating high‐quality transparent conductors using inexpensive and industrially viable techniques is a major challenge toward developing low cost optoelectronic devices such as solar cells, light emitting diodes, and touch panel displays. In this work, highly transparent and conductive ZnO thin films are prepared from a low‐temperature, aqueous deposition method through the careful control of the reaction chemistry. A robotic synthetic platform is used to explore the wide parameter space of a chemical bath system that uses only cheap and earth abundant chemicals for thin film deposition. As‐deposited films are found to be highly resistive, however, through exposure to several millisecond pulses of high‐intensity, broadband light, intrinsically doped ZnO films with sheet resistances as low as 40 Ω □^?1 can be readily prepared. Such values are comparable with state‐of‐the‐art‐doped transparent conducting oxides. The mild processing conditions (<150 °C) of the ZnO electrodes also enable their deposition on temperature sensitive substrates such as PET, paving the way for their use in various flexible optoelectronic devices. Proof‐of‐concept light emitting devices employing ZnO as a transparent electrode are presented.