Highly Flexible Transparent Electrodes Containing Ultrathin Silver for Efficient Polymer Solar Cells

Transparent electrodes (TEs) having electrooptical trade‐offs better than state‐of‐the‐art indium tin oxide (ITO) are continuously sought as they are essential to enable flexible electronic and optoelectronic devices. In this work, a TiO₂‐Ag‐ITO (TAI)‐based TE is introduced and its use is demonstrated in an inverted polymer solar cell (I‐PSCs). Thanks to the favorable nucleation and wetting conditions provided by the TiO₂, the ultrathin silver film percolates and becomes continuous with high smoothness at very low thicknesses (3–4 nm), much lower than those required when it is directly deposited on a plastic or glass substrate. Compared to conventional ITO‐TE, the proposed TAI‐TE exhibits exceptionally lower electrical sheet resistance (6.2 Ω sq^?1), higher optical transmittance, a figure‐of‐merit two times larger, and mechanical flexibility, the latter confirmed by the fact that the resistance increases only 6.6% after 10³ tensile bending cycles. The I‐PSCs incorporating the TAI‐TE show record power conversion efficiency (8.34%), maintained at 96% even after 400 bending cycles.     

A Novel Conductive Core–Shell Particle Based on Liquid Metal for Fabricating Real‐Time Self‐Repairing Flexible Circuits

As a critical part of flexible electronics, flexible circuits inevitably work in a dynamic state, which causes electrical deterioration of brittle conductive materials (i.e., Cu, Ag, ITO). Recently, gallium‐based liquid metal particles (LMPs) with electrical stability and self‐repairing have been studied to replace brittle materials owing to their low modulus and excellent conductivity. However, LMP‐coated Ga₂O₃ needs to activate by external sintering, which makes it more complicated to fabricate and gives it a larger short‐circuit risk. Core–shell structural particles (Ag@LMPs) that exhibit excellent initial conductivity(8.0 Ω sq^?1) without extra sintering are successfully prepared by coating nanosilver on the surface of LMPs through in situ chemical reduction. The critical stress at which rigid Ag shells rupture can be controlled by adjusting the Ag shell thickness so that LM cores with low moduli can release, achieving real‐time self‐repairing (within 200 ms) under external destruction. Furthermore, a flexible circuit utilizing Ag@LMPs is fabricated by screen printing, and exhibits outstanding stability and durability (R/R₀ < 1.65 after 10 000 bending cycles in a radius of 0.5 mm) because of the functional core–shell structure. The self‐repairable Ag@LMPs prepared in this study are a candidate filler for flexible circuit design through multiple processing methods.     

Spin‐ and Spray‐Deposited Single‐Walled Carbon‐Nanotube Electrodes for Organic Solar Cells

Organic bulk‐heterojunction solar cells using thin‐film single‐walled carbon‐nanotube (SWCNT) anodes deposited on glass are reported. Two types of SWCNT films are investigated: spin‐coated films from dichloroethane (DCE), and spray‐coated films from deionized water using sodium dodecyl sulphate (SDS) or sodium dodecyl benzene sulphonate (SDBS) as the surfactant. All of the films are found to be mechanically robust, with no tendency to delaminate from the underlying substrate during handling. Acid treatment with HNO₃ yields high conductivities >1000 S cm^?1 for all of the films, with values of up to 7694 ± 800 S cm^?1 being obtained when using SDS as the surfactant. Sheet resistances of around 100 Ω sq^?1 are obtained at reasonable transmission, for example, 128 ± 2 Ω sq^?1 at 90% for DCE, 57 ± 3 Ω sq^?1 at 65% for H₂O:SDS, and 68 ± 5 Ω sq^?1 at 70% for H₂O:SDBS. Solar cells are fabricated by successively coating the SWCNT films with poly(3,4‐ethylenedioxythiophene):poly(styrene sulphonate) (PEDOT:PSS), a blend of regioregular poly(3‐hexylthiophene) (P3HT) and 1‐(3‐methoxy‐carbonyl)‐propyl‐1‐phenyl‐(6,6)C₆₁ (PCBM), and LiF/Al. The resultant devices have respective power conversions of 2.3, 2.2 and 1.2% for DCE, H₂O:SDS and H₂O:SDBS, with the first two being at a virtual parity with reference devices using ITO‐coated glass as the anode (2.3%).     

Synergistic Roll‐to‐Roll Transfer and Doping of CVD‐Graphene Using Parylene for Ambient‐Stable and Ultra‐Lightweight Photovoltaics

A roll‐to‐roll (R2R) transfer technique is employed to improve the electrical properties of transferred graphene on flexible substrates using parylene as an interfacial layer. A layer of parylene is deposited on graphene/copper (Cu) foils grown by chemical vapor deposition and are laminated onto ethylene vinyl acetate (EVA)/poly(ethylene terephthalate). Then, the samples are delaminated from the Cu using an electrochemical transfer process, resulting in flexible and conductive substrates with sheet resistances of below 300 Ω sq^?1, which is significantly better (fourfold) than the sample transferred by R2R without parylene (1200 Ω sq^?1). The characterization results indicate that parylene C and D dope graphene due to the presence of chlorine atoms in their structure, resulting in higher carrier density and thus lower sheet resistance. Density functional theory calculations reveal that the binding energy between parylene and graphene is stronger than that of EVA and graphene, which may lead to less tear in graphene during the R2R transfer. Finally, organic solar cells are fabricated on the ultrathin and flexible parylene/graphene substrates and an ultra‐lightweight device is achieved with a power conversion efficiency of 5.86%. Additionally, the device shows a high power per weight of 6.46 W g^?1 with superior air stability.     

Flexible Multifunctionalized Carbon Nanotubes‐Based Hybrid Nanowires

In this work, flexible multifunctionalized carbon nanotube (CNT)‐based hybrid nanowires are synthesized through surface modification processes. The good dispersability of the hybrid nanowire in polar solvents facilitates directly making fine patterns with a minimum width of 40 μm for applications of flexible and stretchable circuits (FSCs). The hybrid nanowire possesses a flexible and highly conductive structure which demonstrates stable electro‐mechanical properties on polydimethylsiloxane (PDMS) substrates under large structural deformation. FSCs fabricated from the hybrid nanowires show a constant resistance of 0.096 Ω □^?1 (equivalent of a resistivity 0.96 Ω μm) under repeated bending cycles. The FSCs also have a low and stable sheet resistance of 0.4 Ω □^?1 for strains up to 30%, which is almost four orders of magnitude lower than that of pure CNT samples (1316 Ω □^?1). Further improved stretchability and electro‐mechanical properties (0.1 Ω □^?1, at the strain of 100%) are achieved with a prestrain PDMS substrate. Repeated deformation tests demonstrate the high reliability of FSCs. The observed stable and reliable electro‐mechanical performance of FSCs suggests the potential use of the material in wearable and portable electronics.     

Work‐Function Engineering of Graphene Anode by Bis(trifluoromethanesulfonyl)amide Doping for Efficient Polymer Light‐Emitting Diodes

Graphene has been considered to be a potential alternative transparent and flexible electrode for replacing commercially available indium tin oxide (ITO) anode. However, the relatively high sheet resistance and low work function of graphene compared with ITO limit the application of graphene as an anode for organic or polymer light‐emitting diodes (OLEDs or PLEDs). Here, flexible PLEDs made by using bis(trifluoromethanesulfonyl)amide (TFSA, [CF₃SO₂]₂NH) doped graphene anodes are demonstrated to have low sheet resistance and high work function. The graphene is easily doped with TFSA by means of a simple spin‐coating process. After TFSA doping, the sheet resistance of the TFSA‐doped five‐layer graphene, with optical transmittance of ≈88%, is as low as ≈90 Ω sq^?1. The maximum current efficiency and power efficiency of the PLED fabricated on the TFSA‐doped graphene anode are 9.6 cd A^?1 and 10.5 lm W^?1, respectively; these values are markedly higher than those of the PLED fabricated on pristine graphene anode and comparable to those of an ITO anode.     

Breathable and Flexible Polymer Membranes with Mechanoresponsive Electric Resistance

Flexible low‐resistance membranes play an important role in soft electronics as sensors for robotics, body movement monitoring, nanogenerators to collect kinetic energy from body movements, and flexible batteries. Despite great efforts, low‐resistance, mechanically stable large‐dimensional membranes that tolerate very high deformability without sacrificing resistance produce low joule heating and allow passage of gases for human comfort are still being sought. Here, one of the solutions is provided by sandwiching a network of silver nanowires (AgNWs) between two highly porous electrospun thermoplastic polyurethane (TPU) membranes. The membranes are mechanically robust (both for bending and stretching) with a strong interface and large strain before breakage (more than 700%). The sheet resistance is as low as <0.1 (±0.01) Ω sq^?1, and changed to only 1.6 (±0.43) Ω sq^?1 upon stretching to 100% strain. The combination of polymer elasticity and the AgNW network structure provides a reversible change in resistance beyond 100% strain. A detailed thermographic analysis is employed to in situ image and characterize the AgNW network morphology during various stretched conditions. It is believed that this flexible, sandwich‐like, electrically conductive membrane is a good candidate for smart wearable devices and soft robots.     

Highly Efficient and Bendable Organic Solar Cells with Solution‐Processed Silver Nanowire Electrodes

Highly efficient and bendable organic solar cells (OSCs) are fabricated using solution‐processed silver nanowire (Ag NW) electrodes. The Ag NW films were highly transparent (diffusive transmittance ≈ 95% at a wavelength of 550 nm), highly conductive (sheet resistance ≈ 10 Ω sq^?1), and highly flexible (change in resistance ≈ 1.1 ± 1% at a bending radius of ≈200 μm). Power conversion efficiencies of ≈5.80 and 5.02% were obtained for devices fabricated on Ag NWs/glass and Ag NWs/poly(ethylene terephthalate) (PET), respectively. Moreover, the bendable devices fabricated using the Ag NWs/PET films decrease slightly in their efficiency (to ≈96% of the initial value) even after the devices had been bent 1000 times with a radius of ≈1.5 mm.     

High Mobility WS2 Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors

The electrical contact is one of the main issues preventing semiconducting 2D materials to fulfill their potential in electronic and optoelectronic devices. To overcome this problem, a new approach is developed here that uses chemical vapor deposition grown multilayer graphene (MLG) sheets as flexible electrodes for WS₂ field‐effect transistors. The gate‐tunable Fermi level, van der Waals interaction with the WS₂, and the high electrical conductivity of MLG significantly improve the overall performance of the devices. The carrier mobility of single‐layer WS₂ increases about a tenfold (50 cm² V^?1 s^?1 at room temperature) by replacing conventional Ti/Au metal electrodes (5 cm² V^?1 s^?1) with the MLG electrodes. Further, by replacing the conventional SiO₂ substrate with a thin (1 µm) parylene‐C flexible film as insulator, flexible WS₂ photodetectors that are able to sustain multiple bending stress tests without significant performance degradation are realized. The flexible photodetectors exhibited extraordinarily high gate‐tunable photoresponsivities, reaching values of 4500 A W^?1, and with very short (<2 ms) response time. The work of the heterostacked structure combining WS₂, graphene, and the very thin polymer film will find applications in various flexible electronics, such as wearable high‐performance optoelectronics devices.     

Highly Conductive,Bendable, Embedded Ag Nanoparticle Wire Arrays Via Convective Self‐Assembly: Hybridization into Ag Nanowire Transparent Conductors

The optoelectrical properties of Ag nanowire (NW) networks are improved by incorporating the NWs into highly conductive ordered arrays of Ag nanoparticle wires (NPWs) fabricated via surfactant‐assisted convective self‐assembly. The NPW–NW hybrid conductor displays a transmittance (T) of 90% at 550 nm and a sheet resistance (R _s) of 5.7 Ω sq^?1, which is superior to the corresponding properties of the NW network showing a R _s of 14.1 Ω sq^?1 at a similar T. By the modified wettability of a donor substrate and the capillarity of water, the sintered NPW–NW hybrid conductors are perfectly transferred onto an UV‐curable photopolymer film, and the embedded hybrid conductors exhibit excellent electromechanical properties. The R _s and T of the NPW arrays can be predicted by using a simple model developed to calculate the width and height of the hexagonal close‐packed particles formed during the convective self‐assembly. The numerical analysis reveals that the maximum Haacke figure of merit of the NW networks is increased considerably from 0.0260 to 0.0407 Ω^?1 by integration with the NPW array. The highly conductive NPW arrays generated using a simple, low‐cost, and nonlithographic process can be applied to enhancing the performances of other transparent conductors, such as carbon nanotubes, metal oxides, and graphenes.     

Simultaneous Electrochemical Dual‐Electrode Exfoliation of Graphite toward Scalable Production of High‐Quality Graphene

Developing scalable methods to produce large quantities of high‐quality and solution‐processable graphene is essential to bridge the gap between laboratory study and commercial applications. Here an efficient electrochemical dual‐electrode exfoliation approach is developed, which combines simultaneous anodic and cathodic exfoliation of graphite. Newly designed sandwich‐structured graphite electrodes which are wrapped in a confined space with porous metal mesh serve as both electrodes, enabling a sufficient ionic intercalation. Mechanism studies reveal that the combination of electrochemical intercalation with subsequent thermal decomposition results in drastic expansion of graphite toward high‐efficiency production of graphene with high quality. By precisely controlling the intercalation chemistry, the two‐step approach leads to graphene with outstanding yields (85% and 48% for cathode and anode, respectively) comprising few‐layer graphene (1–3 layers, >70%), ultralow defects (I_D/I_G < 0.08), and high production rate (exceeding 25 g h^?1). Moreover, its excellent electrical conductivity (>3 × 10⁴ S m^?1) and great solution dispersibility in N‐methyl pyrrolidone (10 mg mL^?1) enable the fabrication of highly conductive (11 Ω sq^?1) and flexible graphene films by inkjet printing. This simple and efficient exfoliation approach will facilitate the development of large‐scale production of high‐quality graphene and holds great promise for its wide application.     

Reduced Graphene Oxide Micromesh Electrodes for Large Area,Flexible, Organic Photovoltaic Devices

A laser‐based patterning technique—compatible with flexible, temperature‐sensitive substrates—for the production of large area reduced graphene oxide micromesh (rGOMM) electrodes is presented. The mesh patterning can be accurately controlled in order to significantly enhance the electrode transparency, with a subsequent slight increase in the sheet resistance, and therefore improve the tradeoff between transparency and conductivity of reduced graphene oxide (rGO) layers. In particular, rGO films with an initial transparency of ≈20% are patterned, resulting in rGOMMs films with a ≈59% transmittance and a sheet resistance of ≈565 Ω sq^?1, that is significantly lower than the resistance of ≈780 Ω sq^?1, exhibited by the pristine rGO films at the same transparency. As a proof‐of‐concept application, rGOMMs are used as the transparent electrodes in flexible organic photovoltaic (OPV) devices, achieving power conversion efficiency of 3.05%, the highest ever reported for flexible OPV devices incorporating solution‐processed graphene‐based electrodes. The controllable and highly reproducible laser‐induced patterning of rGO hold enormous promise for both rigid and flexible large‐scale organic electronic devices, eliminating the lag between graphene‐based and indium–tin oxide electrodes, while providing conductivity and transparency tunability for next generation flexible electronics.     

Hydrophilic Nanotube Supported Graphene–Water Dispersible Carbon Superstructure with Excellent Conductivity

In this work, it is shown that the hydrophilic functionalized multiwall carbon nanotubes (MWCNs) can stabilize a large amount of pristine graphene nanosheets in pure water without the assistance of surfactants, ionic liquids, or hydrophilic polymers. Role of stabilizer is conveyed by highly hydrophilic carbon nanotubes, functionalized by dihydroxy phenyl groups, affording a stable dispersion at concentrations as high as 15 mg mL^?1. Such multidimensional (2D/1D) graphene/MWCN hybrid is found to be dispersible also in other polar organic solvents such as ethanol, isopropanol, N,N‐dimethylformamide, ethylene glycol, and their mixtures. High‐resolution transmission microscopy and atomic force microscopy (AFM) including a liquid mode AFM manifest several types of interaction including trapping of multiwalled carbon nanotubes between the graphene sheets or the modification of graphene edges. Molecular dynamic simulations show that formation of an assembly is kinetically controlled. Importantly, the hybrid can be deposited on the paper by drop casting or dispersed in water‐soluble polymers resulting in record values of electrical conductivity (sheet resistance up to R_s ≈ 25 Ω sq^?1 for free hybrid material and R_s ≈ 1300 Ω sq^?1 for a polyvinilalcohol/hybrid composite film). Thus, these novel water dispersible carbon superstructures reveal a high application potential as conductive inks for inkjet printing or as highly conductive polymers.     

High‐Performance Flexible Multilayer MoS2 Transistors on Solution‐Based Polyimide Substrates

Transition metal dichalcogenides (TMDs) layers of molecular thickness, in particular molybdenum disulfide (MoS₂), become increasingly important as active elements for mechanically flexible/stretchable electronics owing to their relatively high carrier mobility, wide bandgap, and mechanical flexibility. Although the superior electronic properties of TMD transistors are usually integrated into rigid silicon wafers or glass substrates, the achievement of similar device performance on flexible substrates remains quite a challenge. The present work successfully addresses this challenge by a novel process architecture consisting of a solution‐based polyimide (PI) flexible substrate in which laser‐welded silver nanowires are embedded, a hybrid organic/inorganic gate insulator, and multilayers of MoS₂. Transistors fabricated according to this process scheme have decent properties: a field‐effect‐mobility as high as 141 cm² V^?1 s^?1 and an I_on/I_off ratio as high as 5 × 10⁵. Furthermore, no apparent degradation in the device properties is observed under systematic cyclic bending tests with bending radii of 10 and 5 mm. Overall electrical and mechanical results provide potentially important applications in the fabrication of versatile areas of flexible integrated circuitry.     

Bendable Solar Cells from Stable,Flexible, and Transparent Conducting Electrodes Fabricated Using a Nitrogen‐Doped Ultrathin Copper Film

Copper has attracted significant interests as an abundant and low‐cost alternative material for flexible transparent conducting electrodes (FTCEs). However, Cu‐based FTCEs still present unsolved technical issues, such as their inferior light transmittance and oxidation durability compared to conventional indium tin oxide (ITO) and silver metal electrodes. This study reports a novel technique for fabricating highly efficient FTCEs composed of a copper ultrathin film sandwiched between zinc oxides, with enhanced transparency and antioxidation performances. A completely continuous and smooth copper ultrathin film is fabricated by a simple room‐temperature reactive sputtering process involving controlled nitrogen doping (<1%) due to a dramatic improvement in the wettability of copper on zinc oxide surfaces. The electrode based on the nitrogen‐doped copper film exhibits an optimized average transmittance of 84% over a spectral range of 380 ?1000 nm and a sheet resistance lower than 20 Ω sq^?1, with no electrical degradation after exposure to strong oxidation conditions for 760 h. Remarkably, a flexible organic solar cell based on the present Cu‐based FTCE achieves a power conversion efficiency of 7.1%, clearly exceeding that (6.6%) of solar cells utilizing the conventional ITO film, and this excellent performance is maintained even in almost completely bent configurations.     

Single‐Crystalline p‐Type Zn3As2 Nanowires for Field‐Effect Transistors and Visible‐Light Photodetectors on Rigid and Flexible Substrates

Zn₃As₂ is an important p‐type semiconductor with the merit of high effective mobility. The synthesis of single‐crystalline Zn₃As₂ nanowires (NWs) via a simple chemical vapor deposition method is reported. High‐performance single Zn₃As₂ NW field‐effect transistors (FETs) on rigid SiO₂/Si substrates and visible‐light photodetectors on rigid and flexible substrates are fabricated and studied. As‐fabricated single‐NW FETs exhibit typical p‐type transistor characteristics with the features of high mobility (305.5 cm² V^?1 s^?1) and a high I_on/I_off ratio (10⁵). Single‐NW photodetectors on SiO₂/Si substrate show good sensitivity to visible light. Using the contact printing process, large‐scale ordered Zn₃As₂ NW arrays are successfully assembled on SiO₂/Si substrate to prepare NW thin‐film transistors and photodetectors. The NW‐array photodetectors on rigid SiO₂/Si substrate and flexible PET substrate exhibit enhanced optoelectronic performance compared with the single‐NW devices. The results reveal that the p‐type Zn₃As₂ NWs have important applications in future electronic and optoelectronic devices.     

Role of Polymeric Metal Nucleation Inducers in Fabricating Large‐Area,Flexible, and Transparent Electrodes for Printable Electronics

The advent of special types of transparent electrodes, known as “ultrathin metal electrodes,” opens a new avenue for flexible and printable electronics based on their excellent optical transparency in the visible range while maintaining their intrinsic high electrical conductivity and mechanical flexibility. In this new electrode architecture, introducing metal nucleation inducers (MNIs) on flexible plastic substrates is a key concept to form high‐quality ultrathin metal films (thickness ≈ 10 nm) with smooth and continuous morphology. Herein, this paper explores the role of “polymeric” MNIs in fabricating ultrathin metal films by employing various polymers with different surface energies and functional groups. Moreover, a scalable approach is demonstrated using the ionic self‐assembly on typical plastic substrates, yielding large‐area electrodes (21 × 29.7 cm²) with high optical transmittance (>95%), low sheet resistance (<10 Ω sq^?1), and extreme mechanical flexibility. The results demonstrate that this new class of flexible and transparent electrodes enables the fabrication of efficient polymer light‐emitting diodes.     

Electrohydrodynamic NanoDrip Printing of High Aspect Ratio Metal Grid Transparent Electrodes

The transparent conducting electrode is an essential component in many contemporary and future devices, ranging from displays to solar cells. Fabricating transparent electrodes requires a balancing act between sufficient electrical conductivity and high light transmittance, both affected by the involved materials, fabrication methodology, and design. While metal films possess the highest conductivity at room temperature, a decent optical transmittance can only be achieved with ultrathin films. Structuring the metal into optically invisible nanowires has been shown to be promising to complement or even substitute transparent conductive oxides as dominant transparent electrode material. Here the out‐of‐plane fabrication capability of the recently developed method of electrohydrodynamic NanoDrip printing to pattern gold and silver nanogrids with line widths from 80 to 500 nm is demonstrated. This fully additive process enables the printing of high aspect ratio nanowalls and by that significantly improves the electrical performance, while maintaining the optical transmittance at a high level. Metal grid transparent electrodes optimized for low sheet resistances (8 Ω sq^?1 at a relative transmittance of 94%) as well as optimized for high transmittance (97% at a sheet resistance of 20 Ω sq^?1) are reported, which can be tailored on demand for the use in various applications.     

Production of Flexible Transparent Conducting Films of Self‐Fused Nanowires via One‐Step Supersonic Spraying

Scalable and economical manufacturing of flexible transparent conducting films (TCF) is a key barrier to widespread adoption of low‐cost flexible electronics. Here, a simple, robust, and scalable method of flexible TCF formation using supersonic kinetic spraying is demonstrated. Silver nanowire (AgNW) suspensions are sprayed at supersonic speed to produce self‐sintered films of AgNWs on flexible substrates. These films display remarkably low sheet resistance, <10 Ω sq^?1, combined with high transmittance, >90%. These electrically conducting, transparent, and flexible coatings can be deposited over a 100 cm² area in ≈30 s. Theoretical analysis reveals the underlying physical mechanism behind self‐sintering, showing that self‐sintering is enabled by the high velocity of impact in supersonic spraying.     

Back‐contacted back‐junction n‐type silicon solar cells featuring an insulating thin film for decoupling charge carrier collection and metallization geometry

In this study, back‐contacted back‐junction n‐type silicon solar cells featuring a large emitter coverage (point‐like base contacts), a small emitter coverage (point‐like base and emitter contacts), and interdigitated metal fingers have been fabricated and analyzed. For both solar cell designs, a significant reduction of electrical shading losses caused by an increased recombination in the non‐collecting base area on the rear side was obtained. Because the solar cell designs are characterized by an overlap of the B‐doped emitter and the P‐doped base with metal fingers of the other polarity, insulating thin films with excellent electrical insulation properties are required to prevent shunting in these overlapping regions. Thus, with insulating thin films, the geometry of the minority charge carrier collecting emitter diffusion and the geometry of the interdigitated metal fingers can be decoupled. In this regard, plasma‐enhanced chemical vapor deposited SiO₂ insulating thin films with various thicknesses and deposited at different temperatures have been investigated in more detail by metal‐insulator‐semiconductor structures. Furthermore, the influence of different metal layers on the insulation properties of the films has been analyzed. It has been found that by applying a SiO₂ insulating thin film with a thickness of more than 1000 nm and deposited at 350 °C to solar cells fabricated on 1 Ω cm and 10 Ω cm n‐type float‐zone grown silicon substrates, electrical shading losses could be reduced considerably, resulting in excellent short‐circuit current densities of more than 41 mA/cm² and conversion efficiencies of up to 23.0%. Copyright © 2012 John Wiley & Sons, Ltd.