一种TCP/IP卸载引擎架构的应用

使用Altera公司的FPGA来实现TCP/IP卸载引擎(TOE),将TCP/IP协议栈处理工作从主机CPU中移出,提高了主机的处理能力 TCP/IP是一组全世界广泛应用的协议,不仅仅用于Internet,许多私有网络也使用TCP/IP作为其协议组,许多硬件设计都是基于TCP/IP或者相关的协议来开发的.传统的TCP/IP处理网络数据传输过程中,要占用大量的主机CPU资源,为了减轻CPU的压力,一种叫TOE(TCP/IP offload engine,TCP/IP卸载引擎)的技术应运而生.TOE技术对TCP/IP协议栈进行扩展,使部分TCP/IP协议从CPU转移到TOE硬件,减轻CPU的负担.     

IP协议栈的ASIC设计与实现

本文介绍了一种TCP／IP协议族传输处理以太网数据报文过程的ASIC设计——TCP／IP协议栈处理单元的硬件实现。简单介绍了TCP/IP协议栈，着重介绍了TCP/IP协议栈处理单元系统结构和各个模块的设计。硬件实现的TCP/IP协议栈不仅仅提高了系统接入以太网的速度，还大大解放了CPU本身，使其可以更专著于处理其他功能。为各种嵌入式系统脱离PC环境快速接入以太网提供了可能性方案。     

一种适合GEO卫星IP网络的路由架构及协议设计

路由架构及协议是GEO卫星IP网络技术体制设计的重要内容。针对星载硬件平台处理能力受限无法满足大规模地面终端组网的现状,提出了一种星上OSPF路由、终端RIP路由和星地隔离的路由架构及协议部署,设计了星上OSPF路由计算优化方法和终端RIP路由信息跨星洪泛机制。该方法中星载路由器不再参与地面终端路由计算,降低了星上协议处理压力。OPNET仿真结果表明,在星地路由隔离条件下,终端RIP路由仍能正常收敛,从而满足GEO卫星IP网络大规模组网应用。     

TCP/IP协议的ASIC设计与实现

文章介绍了一种TCP/IP协议族传输、处理TCP数据和IP数据报过程的ASIC设计-TCP/IP协议处理器的硬件实现。简单介绍了TCP/IP协议，着重介绍了TCP/IP协议处理器系统结构以及各模块设计。硬件实现的TCP/IP协议处理器提高了IP数据报的处理速度，更重要的是，将Internet网络数据传输从传统的依赖电子计算机系统的模式中解放出来，实现了脱离计算机系统环境建立Internet网络连接。     

miniRTU的网络模块设计

近十年来,随着互联网技术飞速发展,以太网成为商业通信中的主导网络技术.工业以太网技术就是将以太网技术应用在工业领域的互联网技术.文中基于ARM7处理器平台,将TCP/IP协议嵌入到嵌入式系统中来实现系统的网络通信功能.具体内容包括网络模块的硬件设计和软件设计.硬件设计包括网络控制芯片和外围电路设计,软件设计包括底层驱动程序设计和TCP/IP协议移植.该系统适用于具有遥信、遥测,遥控功能的水利、电力调度、市政调度等行业.     

TCP/IP卸载引擎技术及应用

1TCP/IP卸载引擎(TOE)技术以太网是局域网中使用最广泛的联网技术,其速率已从最初的10Mb/s发展到现在的10Gb/s,远远超过主流服务器和计算机微处理器性能的增长速度。在高速处理中,I/O已成为瓶颈,引起此瓶颈的主要原因是TCP/IP协议的处理速度低于网络的速度。TCP/IP卸载引擎(TOE)是一种能减少由微处理器和服务器I/O子系统所处理的TCP/IP协议的技术,它能减轻服务器联网的瓶颈。在连接点使用高速以太网技术部署TCP/IP卸载,可使应用系统充分利用网络的容量。传统上,以太网中TCP/IP协议的处理由服务器的中央处理器(CPU)、CPU…     

网络数据流还原重组技术研究

在网络非终端部分对数据流的处理在传统上就面对很多问题,例如数据回环、差错包、IP分片等。而现代网络随硬件水平的提高,数据量大幅度增加亦为网络流数据处理带来的巨大的难度。除此之外数据处理还要受到了内存、CPU、I/O速度的严重限制。为了通过软件实现有效的网络数据流重组,重点研究快速正确地对IP报文分析重组。研究集中在减少内存占用,提高处理速度,减少错误率,消灭错误包带来的不稳定性。     

基于软硬件协同处理的MPLS路由器实现结构

多协议标签交换(MPLS)技术实现IP网络的流量工程、虚拟专网、服务质量保证.本文建立了标签交换路由器(LSR)功能模型,以此模型基础设计了基于软硬件协同工作的LSR架构.利用灵活的软件处理复杂的控制平面协议,硬件高速的数据处理能力兼顾转发平面对实时性的要求.     

基于1553B总线协议IP核的设计

简单介绍了美国军用数据总线标准MIL-STD-1553B总线协议,给出了通过自顶向下和模块化设计方法,使用VHDL硬件描述语言设计其IP核过程.在充分研究和理解1553B总线协议和参考DDC公司用户手册的基础上设计完成了该总线通信系统中的主要部件BC和RT的设计(即总线控制器和远程终端),在实现这两大功能基础上对存储器管理和错误处理等进行了有效解决.最后通过时序仿真验证了该IP核设计的正确性.     

VOIP语音传输终端设计

针对目前网络技术和多媒体技术的发展,以TCP/IP协议为基础,多种应用层协议为依托,提出一种基于分组交换技术来实现语音传输业务的一种技术—VOIP,并实现终端设计。系统采用dspIC33FJ256GP710芯片及WM8510编解码芯片,在Microchip的TCP/IP协议栈的基础上进行应用开发。阐述了系统的总体设计,终端的硬件与软件设计。实验测试表明,该VOIP系统的终端,通话质量可靠、实时性好,功耗低。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its