SAR图像频域特征保护的相干斑噪声抑制方法

针对SAR图像相干斑噪声抑制和特征保持问题,建立了多尺度自卷积(MSA)和相位一致(PC)的滤波器模型,结合MSA频域变换多尺度均值和PC高精度特征定位的特点,提出了一种频域有特征保护的SAR图像相干斑噪声抑制算法。算法判断SAR图像中不同类型区域,选择不同的滤波策略。对均匀区域采用MSA滤波;由PC测度判断特征区域,并对特征区域采用PC测度加强的MSA滤波;对分离点目标区域,采用观察值与MSA算术平均滤波。算法有效地解决了空域方法对SAR图像噪声抑制效果好而易破坏细节特征的矛盾。仿真实验和滤波性能评估指标分析显示,算法具有良好的抑制SAR图像相干斑噪声和保护特征的能力。     

自适应调节滤波强度的SAR图像非局部平均抑斑算法

为提升对SAR图像乘性相干斑的抑制水平与边缘保护性能,该文提出了一种可自适应调节滤波强度(AFS)的SAR图像非局部平均(NLM)抑斑新算法(AFS-NLM).该算法利用Frost滤波图像计算的局部均值与方差来改善SAR图像场景参量的估计,形成了一种能更好刻画SAR图像同质区与边缘区的改进Kuan滤波系数.利用局部均值比与改进Kuan滤波系数分别作为新的相似性测量参量与自适应衰减因子,构建了一种更适应SAR图像乘性噪声特性的改进NLM滤波.利用偏平滑参数与偏边缘保护参数控制下的改进NLM滤波,分别替代经典Kuan滤波模型中的像素局部均值与自身灰度值作为加权项,并采用由改进Kuan滤波系数构建的自适应调节因子对二者进行加权平均,从而形成了一种可自适应调节滤波强度的加权滤波新模型.实验表明,该文算法与近期多种先进算法相比,具有更好的相干斑抑制与边缘保护性能.     

一种新的高分辨率SAR图像相干斑噪声抑制算法

提出了一种新的基于小波变换对高分辨率合成孔径雷达图像相干斑噪声抑制的算法。首先从SAR图像相干斑噪声产生的机理出发，论述了通过传统的滤波方法在抑制高分辨率SAR图像的相干斑噪声时，损失了大量的边缘信息和纹理细节而采用小波变换降噪的优越性和必要性；其次论述了在小波域中如何利用高频局部的统计特性和分解尺度大小来选取滤波窗口尺寸进行滤波；最后通过实验结果说明了该方法比采用传统的固定窗来实现对高分辨率SAR图像的降噪、保留边缘信息和纹理细节有着更好的性能。     

自适应调节滤波强度的SAR图像非局部平均抑斑算法

为提升对SAR图像乘性相干斑的抑制水平与边缘保护性能,该文提出了一种可自适应调节滤波强度(AFS)的SAR图像非局部平均(NLM)抑斑新算法(AFS-NLM)。该算法利用Frost滤波图像计算的局部均值与方差来改善SAR图像场景参量的估计,形成了一种能更好刻画SAR图像同质区与边缘区的改进Kuan滤波系数。利用局部均值比与改进Kuan滤波系数分别作为新的相似性测量参量与自适应衰减因子,构建了一种更适应SAR图像乘性噪声特性的改进NLM滤波。利用偏平滑参数与偏边缘保护参数控制下的改进NLM滤波,分别替代经典Kuan滤波模型中的像素局部均值与自身灰度值作为加权项,并采用由改进Kuan滤波系数构建的自适应调节因子对二者进行加权平均,从而形成了一种可自适应调节滤波强度的加权滤波新模型。实验表明,该文算法与近期多种先进算法相比,具有更好的相干斑抑制与边缘保护性能。     

SAR图像相干斑空间域统计滤波算法的研究

合成孔径雷达(SAR)图像相干斑噪声滤波技术分成三类：多视处理、统计滤波和变换域滤波。本文总结了空间域统计滤波方法的数学基础和性能评价指标，并选择真实SAR图像作了对比试验．得出了一些有益的结论。     

基于变差系数的SAR图像非局部均值滤波算法

SAR(synthetic aperture radar)图像有固有的乘性相干斑噪声,抑制相干斑噪声和保护边缘信息是研究的重要内容。文章提出了一种变差系数差构建的非局部平均滤波算法DCV-NLM(differenceof coefficient of variation non-local means)。首先,搜索窗口中的变差系数的像素与中心像素在相似窗口中之间的局部差,其次,局部差由两个范数构造的相似性参数,用负指数形式得到每个像素的加权系数,最后是对SAR图像的噪声执行加权滤波。通过提出的算法与IDPAD算法对比,从抑制相干斑图像视觉效果方面对比,DCV-NLM算法比起IDPAD算法有更好的相干斑抑制性能。     

一种新的极化滤波综合性能评估方法

极化合成孔径雷达(SAR)可以获得目标散射的相位信息,这种更加丰富的信息为极化SAR图像相干斑噪声抑制提供了更好的解决方法。通过对几种典型的极化滤波技术的算法实现,基于采样信号波形图、极化特征图和相对标准差,提出了一种新的极化滤波综合性能评估方法。对实测极化SAR数据进行实验验证,结果表明局部统计滤波在图像分辨率的保持、极化信息的保留和相干斑噪声的抑制3个方面都有很好的效果。     

基于改进阈值函数的SAR图像小波去噪方法

为了抑制SAR图像的相干斑噪声,对Garrote阈值函数做了改进,增加指数函数使其更易于逼近其渐近线,提高函数中阈值参数和自变量的阶数,以缩小其偏差性.将改进的Garrote阈值函数用于SAR图像小波阈值去噪.首先,在图像预处理阶段,利用常规方法将SAR图像相干斑乘性噪声模型转换为加性噪声模型,以利于小波滤波处理;其次...     

一种基于SAR图像的典型线特征抽取方法

针对合成孔径雷达(Synthetic Aperture Radar)图像的相干斑噪声会使图像的分割和目标的提取困难的问题,文中利用改进的Lee滤波手段去除相干斑噪声,并使用照度均衡算法平衡SAR图像的光照度,最后使用图割(Graph Cuts)算法交互式地对SAR图像中的线性结构进行抽取。实验结果表明Lee滤波和照度均衡算法分别对于抑制相干斑噪声干扰和修正图像对比度有显著效果,图割算法可以有效地提取出用户感兴趣的线性结构。     

抑制SAR图像相干斑的迭代方向滤波算法

为保护SAR图像边缘特征并有效提高对乘性相干斑噪声的抑制性能,该文提出一种基于迭代方向滤波的抑制图像相干斑新算法。该算法先借助高斯-伽马平行窗估计出的比率边缘强度映射(ESM)与方向信息,自适应地控制各向异性高斯核(AGK),生成沿ESM方向分布的具有各向异性支撑区域的局域窗。然后将SAR图像多种局部统计参量联合作为衰减因子,形成与SAR图像区域分布特性相适应的负指数衰减型加权系数,进而将负指数衰减型加权系数与局域窗带方向的各向异性支撑区域结合形成局域加权的方向滤波。最后对SAR图像迭代地进行方向滤波即可实现带边缘保护的相干斑抑制。实验结果表明,与多种抑斑算法相比,该文算法在SAR图像抑斑与边缘保护方面均获得了更好的性能。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-