首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到19条相似文献,搜索用时 125 毫秒
1.
结合实验中观察到的光激发电荷畴现象,提出光激发电荷畴理论模型描述高倍增GaAs光电导开关的瞬态特性,讨论了高倍增GaAs光电导开关的非线性特性如上升时间、时间延迟和光能、电场阈值,光激发电荷畴的成核、生长以及畴内发生的碰撞电离和辐射复合决定了高倍增GaAs光电导开关的引发和维持相,理论计算结果与实验测试相符合.  相似文献   

2.
施卫 《半导体学报》2001,22(12):1481-1485
结合实验中观察到的光激发电荷畸现象,提出光激发电荷畸理论模型描述高倍培GaAs光电导开关的瞬态特性,讨论了高倍增GaAs光电导开关的非线性特性如上升时间、时间延迟和光能、电场阈值,光激发电荷畸的成核、生长以及畸内发生的磁撞电离和辐射复合决定了高倍增GaAs光电导开关的引发和维持相,理论计算结果与实验测试相符合。  相似文献   

3.
半导体材料     
0118276高倍增 GaAs 光电导开关中的单电荷畴[刊]/施卫//西安理工大学学报.—2001,17(2).—113~116(K)给出了高倍增 SI-GaAs 光电导开关中在临界光能、电场阈值触发条件下的瞬态光激发电荷畴现象的实验结果,进一步讨论了生成畴的光、电阈值条件。提出用类似于耿畴的单电荷畴的物理模型来描述高倍增GaAs 光电导开关中的 Lock-on 效应。分析了单电荷畴的形成和辐射发光的物理过程,并对 Lock-on 效应的典型现象作了物理解释。参10  相似文献   

4.
高倍增高压超快GaAs光电导开关中的光激发畴现象   总被引:9,自引:3,他引:6  
本文首次报道了在临界触发条件下观察到的高倍增GaAs光电导开关中的光激发畴现象.分析了畴的产生与辐射发光在Lock-on效应中的作用.指出正是光激发畴的性质与行为决定了GaAs光电导开关高倍增工作模式的典型现象和特性.  相似文献   

5.
在半绝缘GaAs光电导开关币发现了光激发电荷畴的猝灭畴模式.分析指出畴猝灭是由于畴在渡越中开关的瞬时电场低于畴的维持电场引起的,并指出在开关电场低于非线性光电导开关阈值电场条件下,在到达阳极前畴的猝灭可导致开关输出电流的振荡频率高于畴的渡越时间频率.根据开关上作电路条件及畴特性给出了猝火畴模式的等效电路,计算了相应的电路参数,计算结果与实验基本吻合.该研究为提高光注入畴器件的振荡频率及工作效率提供了理论和实验依据.  相似文献   

6.
半绝缘GaAs光电导开关的击穿特性   总被引:11,自引:1,他引:10  
施卫  田立强 《半导体学报》2004,25(6):691-696
研究了在不同触发条件下半绝缘GaAs光电导开关的击穿特性 .当触发光能量和偏置电场不同时 ,半绝缘GaAs光电导开关的击穿损坏程度也不同 ,分别表现为完全击穿、不完全击穿和可恢复击穿三种类型 .通过对击穿实验结果的分析认为 ,电子俘获击穿机制是导致半绝缘GaAs光电导开关击穿损坏的主要原因 .偏置电场和陷阱电荷所产生热电子的数量和动能决定了Ga—As键的断裂程度 ,Ga—As键的断裂程度则反映半绝缘GaAs光电导开关的击穿类型  相似文献   

7.
田立强  施卫 《半导体学报》2008,29(10):1913-1916
在半绝缘GaAs光电导开关中发现了光激发电荷畴的猝灭畴模式. 分析指出畴猝灭是由于畴在渡越中开关的瞬时电场低于畴的维持电场引起的,并指出在开关电场低于非线性光电导开关阈值电场条件下,在到达阳极前畴的猝灭可导致开关输出电流的振荡频率高于畴的渡越时间频率. 根据开关工作电路条件及畴特性给出了猝灭畴模式的等效电路,计算了相应的电路参数,计算结果与实验基本吻合. 该研究为提高光注入畴器件的振荡频率及工作效率提供了理论和实验依据.  相似文献   

8.
徐鸣  李孟霞  安鑫  卞康康  施卫 《红外与激光工程》2016,45(4):425001-0425001(5)
在实验上对光激发电荷畴进行有效的猝灭,是利用具有雪崩倍增效应的非线性砷化镓光电导开关作为太赫兹辐射源的关键问题之一。提出了基于双光束红外激光来猝灭砷化镓光电导开关的非线性模式的初步实验方法,两束激光时延为100 ps,其中第二束为猝灭光。实验中,12 mm间隙的砷化镓光电导开关偏置电压可达到32 kV,输出电流为900 A。同时,14 mm间隙开关在20 kV偏置、毫焦光能触发条件下,可连续工作230次,输出波形具有较好的重复性。结果表明,双光束红外激光能够猝灭非线性模式,重复工作性能稳定,对高重复频率触发下光电导方法产生高功率太赫兹辐射的研究奠定了前期实验基础。  相似文献   

9.
对比了半绝缘多能谷光电导开关中光激发单极畴和耿氏器件中偶极畴的物理机制.从产生机理、电场分布、电子浓度、生长和演变过程等多角度阐述光激发单极畴的特性.与偶极畴显著不同的是,光激发单极畴内仅有光生电子积累层,没有上离子层;光激发单极畴与光生空穴之间产生了一个与外加电场反向的电场,使畴前电场增强,畴头部电子浓度最高;光激发单极畴生长过程可以一直持续下去,终因电子碰撞电离演变为发光畴,如果碰撞电离达到雪崩强度,将演变为雪崩发光畴.最后,本文用光激发单极畴模型解释了光电导开关非线性工作模式的超快上升沿、发光电流丝、电流锁定现象等重要实验现象.  相似文献   

10.
王馨梅  施卫  田立强  侯磊 《半导体学报》2008,29(10):1980-1983
对比了半绝缘多能谷光电导开关中光激发单极畴和耿氏器件中偶极畴的物理机制. 从产生机理、电场分布、电子浓度、生长和演变过程等多角度阐述光激发单极畴的特性. 与偶极畴显著不同的是,光激发单极畴内仅有光生电子积累层,没有正离子层;光激发单极畴与光生空穴之间产生了一个与外加电场反向的电场,使畴前电场增强,畴头部电子浓度最高;光激发单极畴生长过程可以一直持续下去,终因电子碰撞电离演变为发光畴,如果碰撞电离达到雪崩强度,将演变为雪崩发光畴. 最后,本文用光激发单极畴模型解释了光电导开关非线性工作模式的超快上升沿、发光电流丝、电流锁定现象等重要实验现象.  相似文献   

11.
高倍增超快高压GaAs光电导开关触发瞬态特性分析   总被引:6,自引:2,他引:4       下载免费PDF全文
施卫  梁振宪 《电子学报》2000,28(2):20-23
首次提出"发光畴"模型对强电场下GaAs光电导开关高倍增工作模式的物理机制进行解释.其要点是:光注入载流子引起开关电场畸变,开关偏置在触发电场阈值下因负阻效应产生高场畴,畴内发生碰撞电离引起载流子的雪崩倍增,相伴而生的辐射复合发射光子替代了已消失的触发光脉冲,畴的运动与发光使载流子以108cm/s的速度穿越电极间隙,畴生存条件决定Lock-on电场,当外电路的控制使开关电场不能维持畴的生存时,开关电阻恢复.  相似文献   

12.
Ferroelectric polarization switching in epitaxial (110) BiFeO3 films is studied using piezoresponse force microscopy of a model in‐plane capacitor structure. The electrode orientation is chosen such that only two active domain variants exist. Studies of the kinetics of domain evolution allows clear visualization of nucleation sites, as well as forward and lateral growth stages of domain formation. It is found that the location of the reverse‐domain nucleation is correlated with the direction of switching in a way that the polarization in the domains nucleated at an electrode is always directed away from it. The role of interface charge injection and surface screening charge on switching mechanisms is explored, and the nucleation is shown to be controllable by the bias history of the sample. Finally, the manipulation of domain nucleation through domain structure engineering is illustrated. These studies pave the way for the engineering and design of the ferroelectric device structures through control of individual steps of the switching process.  相似文献   

13.
基于耦合电感的高增益变换器在新能源发电和直流微电网中均有良好的应用前景。论文在分析基于耦合电感的高增益升降压(Buck-Boost)变换器工作原理的基础上,采用开关流图法建立变换器的模型,详细推导了变换器的稳态模型和交流小信号模型;电力仿真(PSIM)软件对变换器小信号模型的仿真结果证明论文模型的正确性。论文结果对高增益DC/DC变换器控制回路的设计具有较高的参考价值。  相似文献   

14.
A rate equation model preserving charge neutrality for quantum-dot semiconductor optical amplifiers (QD-SOAs) is established to investigate the nonlinear gain dynamics in the saturation regime. The static gain of QD-SOA is calculated assuming overall charge neutrality and compared with that without overall charge neutrality. Optical modulation response and nonlinear phase fluctuation through saturated QD-SOAs are calculated numerically based on a small-signal analysis. The gain dynamics of QD-SOAs are strongly dependent on the current injection level. The carrier reservoir in the wetting layer and continuum state is necessary for QD-SOAs to operate with high gain, high saturation power, and ultrafast gain recovery.  相似文献   

15.
This paper describes an improved lumped circuit model of power bipolar junction transistors (BJTs) that can predict the turn-off fall time to a greater accuracy than currently available models. Though the existing models simulate the storage time and delay time to a good accuracy, the fall time performance is neglected. This is because the existing models do not account for the charge decay due to recombination. The model presented in this paper is based on the charge dynamics of the device. The charge dynamics are explained in detail using simulation results from an advanced two-dimensional (2-D) device and circuit simulator. Based on a physical understanding of the charge dynamics, this model is implemented to incorporate the charge decay due to recombination to account for the current tail during turn-off. The lumped-circuit model is implemented in PSPICE using the existing quasisaturation model along with controlled sources. To validate the model, the device was subjected to hard- as well as soft-switching renditions (zero current switching and zero voltage switching). The modeled results are observed to have a good match with measured results  相似文献   

16.
The performances of switched diversity systems operating on generalized (Nakagami)-fading channels are analyzed using a discrete-time model. The average bit error rate (BER) of binary noncoherent frequency shift keying (NCFSK) on slow, nonselective Nakagami-fading channels is derived. Closed-form expressions that can be used to determine optimum switching thresholds (in a minimum error rate sense) are also derived. In addition, the use of optimum fixed thresholds is considered. It is found that a considerable amount of diversity gain can be obtained using an optimum fixed (rather than adaptive) switching threshold. Results are obtained for both independent and correlated Nakagami-fading branch signals. The effects of fading severity and the correlation coefficient on both the BER and on the optimum switching threshold are investigated. It is shown that useful diversity gain can be obtained with power correlation coefficients as high as 0.9 when the fading is strong. The results for a Rayleigh channel are obtained and presented as a special case of generalized-fading model  相似文献   

17.
The purpose of this paper is to study the generation of short pulses of the three quarter wave shift distributed feedback (3Qws-dfb) laser by using switching gain technique. We have used the temporal domain model (Tdm) which is a multimode spatio-temporal model that considers simultaneously all the modes of the overall intra-cavity field as well as the two following nonlinear effects, the spectral hole burning (Shb) and the gain saturation. Obtained results showed that a 3Qws-dfb laser can generate short pulses in accordance with Fourier criteria. These results show that 3Qws-dfb lasers are potential candidates as monomode optical sources for long distance high bit rate telecommunications.  相似文献   

18.
Cuk变换器具有输入与输出电流纹波低、能量双向流动等优点,在新能源发电和直流微网中具有良好的应用前景。在分析变换器工作原理的基础上,分别建立导通和截止状态的开关流图;引入以乘法器描述的开关支路模型,推导变换器在整个开关周期的开关流图;对开关支路施加扰动,提取变换器的小信号模型,并应用梅森公式计算变换器的传递函数。采用PSIM软件对变换器小信号模型进行仿真,结果证明了模型的正确性,本文方法对高阶开关变换器建模具有较高的参考价值。  相似文献   

19.
Given is the experiment results in which the laser pulses of 1 046 nm and 532 nm are used to trigger the semi-insulation GaAs photoconductive semiconductor switch(PCSS) with an electrode distance of 4 mm. And made is an analysis of the switch's photovoltaic response characteristics under the high gain mode when the biased field is bigger than the Geng effect field. Also a theory is presented that the main reason for the photovoltaic pulse response delay is the transmission of charge domain, caused by the presence of EL2 energy level in the chip material. Finally, the transmission time of charge domain is calculated and a result that inosculates with the experiment is attained.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号