Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes (SCH LDs) has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well (QW), an AlGaAs interlayer with a smaller Al component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the AlGaAs interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency.     

Microstructure and optoelectronic properties of gallium- titanium-zinc oxide thin films deposited by magnetron sputtering

Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction(XRD) and scanning electron microscopy(SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.     

使用ZnO电流扩展层提高GaN基LED提取效率

Gallium nitride （GaN） based light emitting diodes （LEDs） with a thick and high quality ZnO film as a current spreading layer grown by metal-source vapor phase epitaxy （MVPE） are fabricated successfully. Compared with GaN-based LEDs employing a Ni/Au or an indium tin oxide transparent current spreading layer, these LEDs show an enhancement of the external quantum efficiency of 93% and 35% at a forward current of 20 mA, respectively. The full width at half maximum of the ZnO （002） ω-scan rocking curve is 93 arcsec, which corresponds to a high crystal quality of the ZnO film. Optical microscopy and atomic force microscopy are used to observe the surface morphology of the ZnO film, and many regular hexagonal features are found. A spectrophotometer is used to study the different absorption properties between the ZnO film and the indium tin oxide film of the GaN LED. The mechanisms of the extraction quantum efficiency increase and the series resistance change of the GaN-based LEDs with ZnO transparent current spreading layers are analyzed.     

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

In this work, we report on the growth by metalorganic vapor phase epitaxy (MOVPE) of GaN layers on AlN/Si(111) templates with step-graded AlGaN intermediate layers. First, we will discuss the optimization of the AlN/Si(111) templates and then we will discuss the incorporation of step-graded AlGaN intermediate layers. It is found that the growth stress in GaN on high-temperature (HT) AlN/Si(111) templates is compressive, although, due to relaxation, the stress we have measured is much lower than the theoretical value. In order to prevent the stress relaxation, step-graded AlGaN layers are introduced and a crack-free GaN epitaxial layer of thickness >1 μm is demonstrated. Under optimized growth conditions, the total layer stack, exceeding 2 μm in total, is kept under compressive stress, and the radius of the convex wafer bowing is as large as 119 m. The crystalline quality of the GaN layers is examined by high-resolution x-ray diffraction (HR-XRD), and the full-width-at-half maximums (FWHMs) of the x-ray rocking curve (0002) ω-scan and (−1015) ω-scan are 790 arc sec and 730 arc sec, respectively. It is found by cross-sectional transmission electron microscopy (TEM) that the step-graded AlGaN layers terminate or bend the dislocations at the interfaces.     

Effect of inter-layer strain interaction on the optical properties of Ge/Si（001） island multi-layers

In this paper we present a study on the influence of the number and the thickness of silicon spacer layer on the optical properties of single-and multi-layers of self assembled Ge/Si(001) islands performed by means of cathodoluminescence spectroscopy,high resolution X-ray diffraction and transmission electron microscopy. In single-layer sample,we do not evidence dependence of the island no-phonon emission peak position on the silicon cap-layer thickness. In multi-layer samples having a thin(33 nm) silicon spacer layer the no-phonon emission energy value progressively blue-shifts for an increasing number of island layers. This is interpreted as an enhanced intermixing driven by the strain interaction existing between island layers. On the contrary,island emission energy position is independent on the number of layers in the sample series having a thicker spacer layer(60 nm) . These findings are consistent with the X-ray diffraction observation that islands belonging to different layers have the same composition. As a consequence we can conclude that multilayers with 60-nm spaced islands layer are more homogeneous and ordered.     

Study on the structural, electrical and optical properties of Al-F co-doped ZnO thin films prepared by RF magnetron sputtering

Al and F co-doped ZnO(ZnO:(Al,F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural,electrical and optical properties of the deposited films are sensitive to the F doping content.The X-ray analysis shows that the films are c-axis orientated along the(002) plane with the grain size ranging from 9 nm to 13 nm.Micrographs obtained by the scanning electron microscope(SEM) show a uniform surface.The best films obtained have a resistivity of 2.16×10-3Ω·cm,while the high optical transmission is 92.0% at the F content of 2.46 wt.%.     

Intermetallic phase formation in thin solid-liquid diffusion couples

Conducting joints with low fabrication temperatures and high thermal stability are useful in modern electronics. This paper discusses the potential use of intermetallic phases in making such joints. Thin interconnection layers that consist entirely of intermetallic phases have been produced by joining planar Cu substrates that are coated with thin films of Sn. Thin layers (1-5 μm) of intermetallic phase are produced at temperatures slightly above the melting temperature of Sn in a process similar to reflow soldering. Metallography and x-ray analysis are used to characterize the formation mechanism of the intermetallic. Cu dissolves into the liquid Sn by diffusion along narrow channels between grains of the growing η-Cu₆Sn₆ intermetallic phase. Tensile tests were used to measure mechanical properties. The joint strength increased with reaction time. The joint fails in a ductile mode as long as unreacted Sn is present, but fractures along interphase boundaries when the joint is completely intermetallic.     

温度：影响多孔硅光学特性的一个关键参数

The optical properties of porous silicon（PS） samples fabricated by pulse etching in a temperature range from-40 to 50-C have been investigated using reflectance spectroscopy,photoluminescence spectroscopy,and scanning electron microscopy（SEM）.The dependence of the optical parameters,such as the refractive index n and the optical thickness（nd） of PS samples,on the etching temperature has been analyzed in detail.As the etching temperature decreases,n decreases,indicating a higher porosity,and the physical thickness of PS samples also decreases.Meanwhile,the reflectance spectra exhibit a more intense interference band and the interfaces are smoother.In addition,the intensity of the PL emission spectra is dramatically increased.     

Template-directed synthesis of Ag nanowire arrays by a simple paired cell method for SERS

The silver (Ag) nanowire arrays with regular and uniform size were successfully fabricated inside the nanochannels of anodic aluminum oxide (AAO) template by a simple paired cell method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) results indicate that the as-synthesized samples are composed of face-centered cubic structure, and the average diameter is about 60–70 nm. Transmission electron microscopy (TEM) and the corresponding fast Fourier transformation (FFT) results show that Ag nanowires have a preferred single-crystal structure. Ultraviolet-visible (UV-vis) spectrum of Ag nanowire arrays exhibits UV emission band at 383 nm which can be attributed to the transverse dipole resonance of Ag nanowire arrays. A good surface-enhanced Raman scattering (SERS) spectrum is observed by excitation with a 514.5 nm laser, and the intensity of the SERS peak is about 23 times higher than that of the normal Raman peak measured from an empty AAO template. The high enhancement factor suggests that this method can be used to fabricate SERS sensor with high efficiency.     

Physical properties of hematite -Fe2O3 thin films: Application to photoelectrochemical solar cells

The physical properties and photoelectrochemical characterization of aluminium doped hematite -Fe2O3, synthesized by spray pyrolysis, have been investigated in regard to solar energy conversion. Stable Al-doped iron (III) oxide thin films synthesized by spray pyrolysis technique reveals an oxygen deficiency and the oxide exhibits n-type conductivity confirmed by anodic photocurrent generation. The preparative parameters have been optimized to obtain good quality thin films which are uniform and well adherent to the substrate. The deposited iron oxide thin films shows the single hematite phase with polycrystalline rhombohedral crystal structure with crystallite size 20-40 nm. Optical analysis enabled to point out the increase in direct band-gap energy from 2.2 to 2.25 eV with doping concentration which is attributed to blue shift. The dielectric constant and dielectric loss are studied as a function of frequency. To understand the conduction mechanism in the films AC conductivity is measured. The conduction occurs by small polaron hopping through mixed valences Fe2+/3+ with an electron mobility 300K of 1.08 Vcm2s-1. The -Fe2O3 exhibits long term chemical stability in neutral solution and has been characterized photoelectrochemically to assess its activity as a photoanode for various electrolytes using white light to obtain I–V characteristics. The Al-doped hematite exhibited higher photocurrent response when compared with undoped films achieving power conversion efficiency of 2.37% at 10 at% Al:Fe2O3 ¬ thin films along with fill factor 0.38 in NaOH electrolyte. The flat band potential Vfb (-0.87 VSCE) is determined by extrapolating the linear part to C-2 = 0 and the slope of the Mott-Schottky plot.     

AlxGa1-xAs/GaAs分布布拉格反射镜的湿法氧化

对垂直腔面发射激光器(VCSEL)的AlxGa1-xAs/GaAs分布布拉格反射镜(DBR)进行了高温湿法氧化.由于AlxGa1-xAs层的氧化产生了应力而导致Al2O3/GaAs界面处出现了孔洞.这些孔洞反过来又缓解了应力而使氧化层的厚度只收缩了8%而不是理论上的20%.并且,随着氧化时间的延长,湿法氧化反应中的反应物和产物沿着多孔界面在氧化物中的传输越充分,从而使AlGaAs层的氧化进行的越完全,氧化质量就越好.     

Large-area oxidation of AlAs layers for dielectric stacks and thick buried oxides

The wet oxidation of AlAs and AlGaAs has been limited to relatively small lateral dimensions and relatively thin layers. Approaches are described to extend the oxide dimensions both horizontally and vertically, creating large-area and thick buried oxides. Two types of large-area structures are examined: dielectric stacks with thin buried oxides and semiconductor-on-insulator structures with thick buried oxides. Low Al-content AlGaAs layers with low oxidation rates are used as the high-index layers in large-area dielectric-stack structures. High Al-content AlGaAs layers with low volume contraction are used to create stable, thick buried oxides with millimeter-scale areas.     

Tapered air apertures for thermally robust VCL structures

We report on a vertical-cavity laser (VCL) process that allows high-temperature annealing up to 950°C for 3 min while minimizing degradation of light-current-voltage characteristics. We used a wet chemical approach to form tapered undercut profiles in buried AlGaAs layers. This two-step process involves AlGaAs multilayers which have been graded to give a tapered oxidation front upon steam oxidation. The second step involves removal of the oxide by a KOH-based solution, keeping the original shape of the oxidized region intact. The air-apertured devices maintained their characteristics after high-temperature annealing while structures with oxide apertures showed a 50% reduction in external efficiency     

高铝Al_xGa_(1-x)As氧化层对垂直腔面发射激光器的影响

针对可见光垂直腔面发射激光器的制备 ,通过湿氮氧化实验和测量微区光致发光谱分别研究了高铝组分Alx Ga1 - x As的氧化特性及氧化产物的收缩应力对有源区的影响 ,结合器件结构设计确定了氧化限制层 Alx Ga1 - x-As的铝组分和最佳位置 ,并制备出了低阈值电流的 Al Ga In P系垂直腔面发射激光器     

Anomalous Oxidation States in Multilayers for Fuel Cell Applications

Significant recent interest has been directed towards the relationship between interfaces and reports of enhanced ionic conductivity. To gain a greater understanding of the effects of hetero‐interfaces on ionic conductivity, advanced analytical techniques including electron microscopy (TEM/STEM), electron energy loss spectroscopy (EELS), and secondary ion mass spectrometry (SIMS) are used to characterize CeO₂/Ce_0.85Sm_0.15O₂ multilayer thin films grown by pulsed laser deposition. High quality growth is observed, but ionic conductivity measured by impedance spectroscopy and ¹⁸O tracer experiments is consistent with bulk materials. EELS analysis reveals the unusual situation of layers containing only Ce(IV) adjacent to layers containing both Ce(III) and Ce(IV). Post oxygen annealing induced oxygen diffusion and mixed oxidation states in both layers, but only in the vicinity of low angle grain boundaries perpendicular to the layers. The implications of the anomalous behavior of the Ce oxidation states on the design of novel electrolytes for solid oxide fuel cells is discussed.     

Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

InGaAs/GaAs-based lasers require thick AlGaAs cladding layers to provide optical confinement. Although the lattice mismatch between GaAs and AlGaAs is very low, relaxation may occur due to the thickness requirement for an AlGaAs waveguide of the order of microns. We have studied the relaxation of InGaAs/GaAs lasers with AlGaAs waveguides grown on GaAs (111)B substrates. We have observed by transmission electron microscopy (TEM) that certain AlGaAs layers show a high density of threading dislocations (TDs), whilst other AlGaAs layers remain essentially dislocation free. To explain the experimental results a model based on dislocation multiplication has been developed. TDs in the AlGaAs cladding layers are observed when the critical layer thickness (CLT) for dislocation multiplication has been overcome. Consequently, a design rule based on a modified CLT model for AlGaAs/GaAs (111)B is proposed.     

Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy

Energy-filtered transmission electron microscopy (EFTEM) was used to study 6H-SiC/SiO₂ interfaces produced by thermal oxidation as a function of the oxidation conditions. Elemental maps of C and Si were used to calculate C-to-Si concentration profiles across the interfaces. Enhanced C/Si concentrations (up to ∼ 35%) were observed at distinct regions in samples oxidized at 1100°C for 4 h in a wet ambient. The data from a number of randomly selected regions indicate that re-oxidation at 950°C for 3 h significantly reduced, but did not eliminate, the amount of excess interfacial carbon.     

Effects of wet N2O oxidation on interface properties of6H-SiC MOS capacitors

Oxynitrides were grown on n- and p-type 6H-SiC by wet N₂O oxidation (bubbling N₂O gas through deionized water at 95°C) or dry N₂O oxidation followed by wet N₂O oxidation. Their oxide/SiC interfaces were investigated for fresh and stressed devices. It was found that both processes improve p-SiC/oxide but deteriorate n-SiC/oxide interface properties when compared to dry N₂O oxidation alone. The involved mechanism could be enhanced removal of unwanted carbon compounds near the interface due to the wet ambient, and hence a reduction of donor-like interface states for the p-type devices. As for the n-type devices, incorporation of hydrogen-related species near the interface under the wet ambient increases acceptor-like interface states. In summary, wet N ₂O oxidation can be used for providing comparable reliability for nand p-SiC MOS devices, and especially for obtaining high-quality oxide-SiC interfaces in p-type MOS devices     

Reduction of AlGaAs Heterostructure High-Index-Contrast Ridge Waveguide Scattering Loss by Sidewall Smoothing Through Oxygen-Enhanced Wet Thermal Oxidation

We demonstrate the efficacy of oxidation smoothing of sidewall roughness in high-index-contrast AlGaAs heterostructure ridge waveguides via oxygen-enhanced nonselective wet thermal oxidation for reducing scattering loss. Single-mode waveguides of core widths between 1.5 and 2.2 ?m are fabricated using both the inward growth of a ~ 600-nm sidewall-smoothing native oxide outer cladding and, for comparison, encapsulation of an unoxidized etched ridge with a ~ 600-nm deposited silicon oxide cladding layer. On average, measured loss coefficients are reduced by a factor of 2 with the oxidation smoothing process.     

Analysis of AlGaAs/GaAs solar cell structures by opticalreflectance spectroscopy

The control of the thickness and composition of the GaAs cap and AlGaAs window layers is essential to the fabrication of high-efficiency AlGaAs/GaAs heteroface solar cells. The use of optical reflectance spectroscopy for the analysis of these structures is presented. The calculation of the reflectance of a system of thin films is described along with the computer program, REFIT, for the analysis of GaAs cell structures. Results are presented for structures at different stages in the solar cell fabrication process, and the method is applied to the analysis of the oxidation of high AlAs mole fraction AlGaAs layers