中间带太阳电池进展

中间带太阳电池是第三代光伏发电研究中很热门的研究领域之一。论述了中间带太阳电池的原理,以及实现中间带材料的三种方法,即量子点中间带电池、杂质带电池、高失配合金。量子点中间带太阳电池的红外吸收测量证实中间带太阳电池的基本原理是正确的。介绍了为提高短路电流,采用应力补偿技术,增加量子点层数,增大量子点的吸收系数。目前量子点中间带太阳电池的效率达到18%。阐述了杂质带的机理,研究表明,当Si中掺Ti浓度超过Mott相变浓度时,杂质抑制非辐射复合,有效载流子寿命增加。高失配合金具有不寻常的能带结构,AlGaN材料的带隙接近中间带的理想值,很可能成为下一个研究的热点。     

纳米结构材料在太阳电池中的应用

各种纳米结构材料具有许多优异的光伏性质。例如量子阱具有良好的带隙可调谐能力,纳米薄膜具有较好的光吸收特性,量子点具有多激子产生能力,纳米线具有低反射特性等。重点评述了采用量子阱、纳米薄膜、各种一维纳米结构、纳米晶粒或量子点等不同纳米结构材料,制作的太阳电池的光伏性能及其近年研究进展。指出了各自的潜在优势与存在问题,并提出了设计与制作新型纳米结构太阳电池的若干技术对策,如选择合适的纳米结构材料、制备有序的量子点结构、设计叠层结构等一系列技术手段,借以提高太阳电池的光电转换效率。可以预期,高效率、低成本和长寿命的纳米结构太阳电池将会对未来光伏产业的发展产生重要影响。     

纳米结构太阳电池的研究与展望

纳米结构太阳电池在未来第三代太阳电池中具有潜在应用价值。首先,介绍了各种纳米结构光伏材料的优异物理特性。然后,着重评述了不同纳米结构太阳电池近年的研究进展。这些太阳电池包括具有带隙可调谐特性的量子阱太阳电池、具有良好光吸收特性的纳米薄膜太阳电池、具有低反射率特性的纳米线太阳电池和基于多基子产生效应的量子点太阳电池。最后,提出了发展纳米结构太阳电池的若干技术对策,包括合理选择适宜纳米结构的材料、制备高质量的纳米光伏材料、优化设计太阳电池的组态结构以及揭示与阐明太阳电池中光生载流子的输运机制。     

InAs/GaAs量子点中间带太阳电池的理论研究与优化

基于InAs/GaAs量子点中间带太阳电池(QD-IBSC)结构和载流子漂移扩散理论建立了计算电流密度与静电势的数学模型,从理论上分析了量子点中间带太阳电池的电压电流特性,定量讨论了量子点层厚度、温度以及n型掺杂对电压电流特性的影响.模拟结果表明:在i层厚度取400 nm时转化效率达到最大值14.01％;温度会对量子点中间带太阳电池的电压电流特性产生影响,温度在300～350 K范围内,开路电压Voc随温度的升高而明显减小,短路电流Jsc几乎不变;对i区进行n型掺杂会抑制量子点层发挥作用.     

掺碳对杂质光伏硅太阳电池性能的影响

杂质光伏太阳电池是一种能够利用那些能量小于禁带宽度的太阳光子以提高电池转换效率的新型太阳电池。利用数值方法研究在硅电池中掺入碳杂质以形成杂质光伏太阳电池,分析掺碳对电池性能的影响。结果表明:利用杂质光伏效应掺入碳杂质能够增加子带光子的吸收,使得电池转换效率提高约2%;转换效率的提高在于电池的红外光谱响应的延展。由此可以得出:利用杂质光伏效应在硅电池中掺碳形成杂质光伏太阳电池是一种能够提高电池转换效率的新途径。     

Mn^(2+)掺杂CdS量子点敏化太阳电池的性能北大核心

采用连续式离子层吸附与反应(SILAR)法不仅成功制备出CdS量子点敏化的TiO2纳米晶光阳极,而且实现了Mn2+在CdS量子点晶格内部的可控掺杂。应用场发射扫描电子显微镜(FESEM)对电极的形貌进行了分析和表征。继而通过组装光伏电池研究Mn2+掺杂浓度与电池性能之间的关系。通过测量其紫外-可见吸收光谱及电流密度-电压(J-V)特性曲线考察电池性能随Mn2+掺杂量的变化规律。在研究中发现,掺杂适量的Mn2+有助于提高CdS/TiO2光阳极对可见光的吸收,进而增强太阳电池的能量转换效率。当Mn2+浓度为0.075 mmol/L时,量子点敏化太阳电池(QDSSC)的能量转换效率可达2.85%,较未掺杂的光阳极试样性能提高约50%。     

纳米结构在新型太阳电池中的应用进展

介绍了应用低维纳米结构提高转换效率的新型太阳电池的研究现状,分别说明了基于量子点、量子线、量子阱结构新型太阳电池的工作原理、制备工艺、存在的问题及最新进展.同时,给出了这些太阳电池未来的发展方向,指出其在太阳电池领域中的重要地位.     

量子点在聚合物太阳电池中的应用

介绍了聚合物太阳电池的一般原理、性能表征,以及聚合物/量子点太阳电池结构,重点列举了有机及无机量子点在聚合物太阳电池中的应用,最后提出了改善聚合物/量子点太阳电池效率的方法。     

Ⅲ-V族材料制备多结太阳电池的研究进展

讨论了采用Ⅲ-Ⅴ族化合物材料制备多结太阳电池时的材料选择和实现方案,重点探讨了采用渐变缓冲层、引入InGaAsN等新材料以及直接键合等三种方法。其中,采用渐变缓冲层结构的Ge/Ga0.35In0.65P/Ga0.83In0.17As三结太阳电池,转换效率提高到41.1%。而采用直接键合技术设计的InGaP/GaAs/InGaAsP/InGaAs四结太阳电池,以及应用InGaAsN等新材料设计的五结以上太阳电池,其转换效率还有可能达到新的高度。此外,一些创新技术,例如电池的反向生长技术、转移层技术以及将GaAs的量子阱结构和量子点应用于多结太阳电池,都为太阳电池效率的进一步提高提供了新的契机。     

有机共混结构太阳电池的阴极界面修饰的研究进展

太阳电池阴极界面的有效修饰能改善器件中载流子的收集与传输,从而提高太阳电池能量转换效率。对于高效、稳定的有机光伏器件来说,合理选择界面修饰材料至关重要,它已成为有机光伏领域研究的重点内容。文章综述了近年来有机共混结构太阳电池阴极界面修饰的研究进展,介绍了各种阴极界面的修饰方法及原理,阐述了国内外有机共混结构太阳电池阴极界面修饰的研究现状及存在问题,为高性能有机太阳电池的研究提供了有价值的参考。     

Electro‐Optics of Colloidal Quantum Dot Solids for Thin‐Film Solar Cells

The electro‐optics of thin‐film stacks within photovoltaic devices plays a critical role for the exciton and charge generation and therefore the photovoltaic performance. The complex refractive indexes of each layer in heterojunction colloidal quantum dot (CQD) solar cells are measured and the optical electric field is simulated using the transfer matrix formalism. The exciton generation rate and the photocurrent density as a function of the quantum dot solid thickness are calculated and the results from the simulations are found to agree well with the experimentally determined results. It can therefore be concluded that a quantum dot solid may be modeled with this approach, which is of general interest for this type of materials. Optimization of the CQD solar cell is performed by using the optical simulations and a maximum solar energy conversion efficiency of 6.5% is reached for a CQD solid thickness of 300 nm.     

InAs/GaAs量子点中间带太阳电池的理论研究与优化

从荧光粉散射机理分析了LED器件色角向分布不均匀的形成原因,提出了一种利用逐点步进光学设计方法,实现了不同入射角度内蓝光光程相等的远荧光粉层结构。应用该方法设计了使用不同折射率载体的LED远荧光粉层光学结构。模拟结果显示,应用所设计的光学形状的远荧光粉层结构,相比传统平面荧光粉层结构,75°方向光斑边缘与中心法线方向色差du′v′从0.05降低到0.01左右,色温偏移降低了43%~98%不等,有效改善了白光LED远程荧光粉封装结构的色度均匀性。该设计不需要增加或改变封装工艺手段,工业生产实现简单,额外成本很少,具有较强的实际应用价值。 更多还原     

Nd2(S,Se, Te)3 Colloidal Quantum Dots: Synthesis,Energy Level Alignment,Charge Transfer Dynamics,and Their Applications to Solar Cells

Novel and less toxic quantum dot (QD) semiconductors are desired for developing environmentally benign colloidal quantum dot solar cells. Here, the synthesis of novel lead/cadmium‐free neodymium chalcogenide Nd₂(S, Se, Te)₃ QDs via solution‐processed method is reported for the first time. The results show that small‐bandgap semiconductor QDs with a narrow size distribution ranging from 2 to 8 nm can be produced, and the wide absorption band can be achieved by the redshift owing to the size quantization effect by controlling the initial loading of chalcogenide precursors. By analyzing the band structure of QDs and the energy level alignment between QDs and TiO₂, the influence of energy offset between the conduction band edges of QDs and TiO₂ on the charge transfer dynamics and photovoltaic performance of QD solar cells (QDSCs) is investigated. It is revealed that among the three types of QDs studied, Nd₂Se₃ QDSCs with the smallest energy offset exhibit the best performances and a decent power conversion efficiency of 3.19% is achieved. This work clearly demonstrates the promising potentials of novel rare earth chalcogenide quantum dots in photovoltaic applications.     

Photonic crystal microcrystalline silicon solar cells

Enhancing the absorption of thin‐film microcrystalline silicon solar cells over a broadband range in order to improve the energy conversion efficiency is a very important challenge in the development of low cost and stable solar energy harvesting. Here, we demonstrate that a broadband enhancement of the absorption can be achieved by creating a large number of resonant modes associated with two‐dimensional photonic crystal band edges. We utilize higher‐order optical modes perpendicular to the silicon layer, as well as the band‐folding effect by employing photonic crystal superlattice structures. We establish a method to incorporate photonic crystal structures into thin‐film (~500 nm) microcrystalline silicon photovoltaic layers while suppressing undesired defects formed in the microcrystalline silicon. The fabricated solar cells exhibit 1.3 times increase of a short circuit current density (from 15.0 mA/cm² to 19.6 mA/cm²) by introducing the photonic crystal structure, and consequently the conversion efficiency increases from 5.6% to 6.8%. Moreover, we theoretically analyze the absorption characteristics in the fabricated cell structure, and reveal that the energy conversion efficiency can be increased beyond 9.5% in a structure less than 1/400 as thick as conventional crystalline silicon solar cells with an efficiency of 24%. © 2015 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd.     

Solar photovoltaics: Trends and prospects

Key areas in the development of photovoltaic methods of solar energy conversion, which open up wide prospects for semiconductor solar energy conversion, are discussed. The article focuses mainly on photovoltaic cells based on III-V heterostructures, primarily on cascade solar cells, which provide the highest efficiency of solar energy conversion and are produced by high-tech methods such as MBE or MOCVD. It is shown that the use of intermediate sunlight concentration makes the area of solar cells smaller and, hence, lowers their cost proportionally to the sunlight concentration ratio.     

40% efficient sunlight to electricity conversion

Increasing sunlight conversion efficiency is a key driver for on‐going solar electricity cost reduction. For photovoltaic conversion, the approach most successful in increasing conversion efficiency is to split sunlight into spectral bands and direct each band to a dedicated solar cell of an appropriate energy bandgap to convert this band efficiently. In this work, we demonstrate conversion of sunlight to electricity in a solar collector with an efficiency value above 40% for the first time, using a small 287‐cm² aperture area test stand, notably equipped with commercial concentrator solar cells. We use optical band‐pass filtering to capture energy that is normally wasted by commercial GaInP/GaInAs/Ge triple junction cells and convert this normally wasted energy using a separate Si cell with higher efficiency than physically possible in the original device. The 287‐cm² aperture area sunlight‐concentrating converter demonstrating this independently confirmed efficiency is a prototype for a large photovoltaic power tower system, where sunlight is reflected from a field of sun‐tracking heliostats to a dense photovoltaic array mounted on a central tower. In such systems, improved efficiency not only reduces costs by increasing energy output for a given investment in heliostats and towers but also reduces unwanted heat generation at the central tower. Copyright © 2015 John Wiley & Sons, Ltd.     

Modeling of polarization charge in N-face InGaN/GaN MQW solar cells

The present work reports on a theoretical study of spontaneous and piezoelectric polarization effects on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells. More especially, it will prove that the use of heterostructures with N-face as a surface polarity can further improve the photovoltaic conversion. A new model including piezoelectric polarization is developed. In this paper, a part of simulation is also paid to analyze the dependence of the photocurrent density, the open circuit voltage, the output power and the efficiency versus the In composition and the number of quantum well units. As has been found, a maximum of energy conversion is expected to achieve 19 percent for optimum alloy composition. An attempt to explain the photovoltaic behavior of the solar cells in correlation of obtained results will be attempted.     

InAs量子点尺寸和间距对GaInP/GaAs/GaInAs/Ge多结叠层电池的影响

A metamorphic GaInP/GaAs/GaInAs/Ge multi-junction solar cell with InAs quantum dots is investigated, and the analytical expression of the energy conversion efficiency on the multi-junction tandem solar cell is derived using the detailed balance principle and the Kronig-Penney model.The influences of interdot distance, quantum-dot size and the intermediate band location on the energy conversion efficiency are studied.This shows that the maximum efficiency,as a function of quantum-dot size and distance,is about 60.15%under the maximum concentration for only one InAs/GaAs subcell,and is even up to 39.69%for the overall cell.In addition,other efficiency factors such as current mismatch,the formation of a quasicontinuum conduction band and concentrated light are examined.     

太阳电池的效率分析

随着太阳能利用的日益广泛，光电转换将越来越受到人们的关注。光电转换效率就是其中的一个热门话题。众所周知，不是任何一种半导体材料都可做出高效率的太阳电池，不同的材料，能带结构一般不相同，因此对太阳光谱的吸收也不相同。文章着重讨论能带结构对光生载流子跃迁的影响、能带结构与光生载流子寿命和迁移率的关系、缺陷对能带结构的影响，并提出提高太阳电池效率的对策。