多架无人作战飞机协同作战的几个关键问题

从分析协同空战对无人作战飞机(UCAV)的要求入手，初步探讨了UCAV多机协同与有人驾驶战斗机多机协同的区别，分析了UCAV多机协同面临的主要问题，阐述了UCAV多机协同的关键技术以及将来可能的应用，指出了UCAV多机协同的研究方向。     

战斗机对空作战效能评估

当前对战斗机的能力评估已经从关注其性能发展到关注其效能上,研究人员一直在努力探索如何对战斗机作战效能进行评估。根据现代空战模式将空战过程分解为超视距空战和视距内空战,并分别对作战飞机进行作战效能评估。针对战斗机的隐身性,提出雷达探测能力、被动雷达探测能力和红外探测能力作为超视距空战中态势感知能力的指标。对于超视距空战和视距内空战的作战效能评估均采用层次分析法,并给出计算各项子能力的计算模型。     

多机协同空战火力控制研究

从火力控制的角度探讨多机协同空战的作战方式和协同作战的基本火力控制原理。在深入分析多机协同空战的火力控制过程基础上,指出协同作战与单机自主作战的火力控制的不同特点。将协同空战分解为协同目标瞄准、协同导弹发射与制导、导弹自主攻击3个阶段,针对和载机火力控制密切相关的前两个阶段进行研究,并提出各个协同阶段的协同方式、协同内容和载机火力控制的实施方法,对于协同空战火力控制理论的研究和战术创新具有一定的指导意义。     

超视距空战的几个观点

介绍了超视距空战武器发展和实战应用,提出了和超视距空战有关的几个观点:信息战和网络中心战是如何影响超视距空战,在超视距中指挥协同和信息的问题,超视距空战和多目标攻击的关系,在超视距空战研究中容易忽视的问题——在空战中如何对付敌方超视距武器,评价战斗机超视距空战能力要考虑的问题,超视距和视距内空战的界限可能逐渐模糊以及无人机在超视距空战中的作用。     

超视距协同空战态势评估方法研究

针对目前超视距协同空战态势评估非参量法模型的缺点,提出了一种新的非参量法模型.该模型针对超视距协同空战的特点,以双机对飞、导弹互射为主,以载机空战能力、机载导弹武器性能、载机高度及机载雷达的探测距离等性能参数作为主要研究对象,分别建立了超视距攻击方式威胁函数、超视距时间威胁函数、超视距高度威胁函数和协同空战能力威胁函数,并采用线性加权法将各种威胁函数进行综合,求得协同空战中的整体威胁态势,作为战术选择、目标分配、火力分配的基础.模型较全面、合理地反映了超视距协同空战的特点.仿真算例验证了模型的有效性.     

多级影响图在无人机群协同空战机动决策中的应用

现代空战多为机群对机群的空战。针对无人机群空战中协同攻防机动决策的问题,首先提出了针对单机对单机的在不确定环境下基于多级影响图的空战决策建模。在此基础上对无人机群进行分组,并根据无人机的空战能力划分角色,在空战初始确定小组内的长机与僚机。通过引入协同因子,对空战机动决策中的当前局势概率重新进行加权修正,很好地解决了单元内各成员协同配合的问题,从而将单纯的一对一空战引申为多机对多机协同空战。仿真结果表明所建立的决策模型能够有效地解决无人机群协同空战的机动决策问题。     

遗传算法在直升机空战编队优化中的应用

研究了传统的现代直升机群协同空战时对目标的威胁判断算法,并且用遗传算法来优化大规模直升机空战编队战术,最终得到一个我方的最优编队,最后用多机编队作战的算例验证了该方法的有效性.     

多智能体作战飞机协同空战指挥控制的若干技术问题

针对多机协同空战指挥控制决策的自主性和协调性需求,对多智能体技术应用于协同空战指挥控制的若干技术问题进行研究.提出基于集中一分散式多智能体协同空战指挥控制协同的结构框架;对经典的BDI-智能体进行扩展,提出基于BDOTI结构的机载空战指挥决策思维逻辑框架;建立面向结构的编队组织结构,应用进程演算对编队攻击行为进行协调.     

空战三维视景仿真设计与实现

针对空对空作战仿真过程直观化以及仿真结果更有利于分析的需求,建立了一个具有沉浸感和交互作用能力的空战三维视景仿真环境.首先,利用建模软件Creator进行了飞机、导弹的三维实体模型和作战场景建模.然后,在空战飞行仿真系统之上,基于Vega Prime平台构建仿真环境的三维视景子系统,实时动态再现空战飞行和打击的全过程,重点研究了实现空战视景仿真的几项关键技术和实现方法,包括飞机舱内视点下的平显系统显示;基于MFC开发视景子系统的程序驱动过程;基于粒子系统的战场环境特效处理技术;以及从舱内以及舱外不同方位进行观察的视点变换.最后给出了空战视景仿真的实施效果,结果表明该系统较好地满足了空战虚拟战场三维演示的需求.     

基于协同攻防的多机空战目标分配及排序

从协同攻击和防守角度出发,提出了多机协同空战中的一种攻击目标分配及排序方法.该方法根据多机协同空战的特点,用指数法对目标敌机的空战能力和三维空战态势进行评估,并由此计算出目标威胁度矩阵.考虑到我方各架战机在任务体系中的重要程度不同,给出防御权系数矩阵,然后根据目标威胁度矩阵和防御权系数矩阵得到协同攻防效度矩阵.在此基础之上,给出了目标分配和火力分配的具体模型,最后结合RBF神经网络给出了具体仿真.仿真结果表明,该方法可以有效地解决多机协同空战中的目标分配及排序问题.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and sub-pixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.