日本公民科学素质基准的本土化探索及对我国的启发

推动公民科学素质基准的制定对于提升我国公民科学素质水平、指导科普活动的开展、建设创新型国家具有重要的意义.目前学界针对美国科学素质基准的研究较多,对日本科学素质基准的研究较少.以日本公民科学素质基准建设的重要成果——《综合报告书》为研究对象,主要运用文本分析、归纳研究等方法,并以日本学者的相关研究成果为基础展开讨论.结果表明,日本公民科学素质基准框架构筑中包含了植根于本国文化传统、注重多领域知识融合、重视基准的长效落实等优秀理念.最终为我国目前公民科学素质建设提出了针对性的建议.     

对青少年科学素养基准结构的分析

未成年人是我国全民科学素质行动计划的重点人群之一。为了促进未成年人提高科学素养、增强创新意识和实践能力,需要编制《青少年科学素养基准》,明确未成年人应具备的基本科学素质的内容,为未成年人科学素质行动的实施和监测提供依据。本文对国内外青少年科学素养标准和评价项目进行了简要的介绍和分析,并以科学素养的"九要素模型"为参考框架,提出了青少年科学素质基准的内容结构。     

美国实施科学、技术、工程和数学教育战略提升国家竞争力

公众科学素质水平决定着一国之劳动力素质和文明程度,对科技、经济和社会发展的重要性日益突显。为了保持美国的国际科技领先地位和竞争力,奥巴马政府近期制定了联邦科学、技术、工程与数学教育的五年战略规划。规划对提高国家STEM教育质量、保证和增加青少年及公众对STEM教育的参与、加强在校大学生的STEM学习、更好地服务于STEM教育传统上未受重视群体、为未来STEM劳动力提供所需的研究生教育以及建立一个高效的跨部门合作的新模式和建立并运用基于实证研究的路径等进行了详尽的部署。为此,应面向未来加快制定我国全民科学素质建设长远规划。     

公民科学素质：要义、测度与几点思考

本文梳理了国内外公民科学素质的理论体系,对其概念要义进行综合比较;存此基础上重点探讨了我国公民科学素质测度存在的问题和需讨论的测度方案,并结合相关政策实施提出了几点战略上的思考.     

低功耗高精度基准源研究综述

本文介绍了基准源电路的发展脉络及研究进展.按照电路功能进行分类,基准源可以分为基准电压源和基准电流源.对于基准电压源,分别对于带隙基准源、混合基准源和CMOS基准源三个类别的发展历程及最新研究成果进行了总结和讨论;分析了这些电路在降低功耗、提高精度方面的创新之处、优点和存在的问题.对于基准电流源,主要讨论了电流直接补偿以及由电压源得到电流源两种设计方法.基于以上讨论,对于基准源未来的发展前景进行了展望.     

公民的基本科学素质及其测评

公民科学素质测评,是衡量公民自身科学素质的主要手段,也是国家实施全民科学素质行动计划的重要参考。开展公民科学素质测评,既要借鉴国外相关经验和成果,有利于国际比较,也要结合我国国情,客观反映我国公民具备基本科学素质的水平以及是否达到了提高科学素质的目标要求。本研究试图通过对国内外关于公民科学素质概念的构成分析,探讨适合我国国情的公民基本科学素质的内涵、基本标准及其测评方式,并尝试从"内容"和"程度"两个维度建立我国公民科学素质测评的六要素模型以及三级指标体系。     

对科学的态度：概念、影响因素及测量

我国对科学的态度有关研究始于20世纪90年代初期,起步较晚,此领域的学者以及研究机构较少,已有研究较为零散。在《全民科学素质行动计划纲要（2006-2010-2020年）》的指导下,我国已将民众对科学的态度列入科学素质的测评体系中,并且作为核心要素用于指导全民科学素质的提高。本文拟从态度理论研究入手,对科学的态度研究（概念、影响因素及测量）进行回顾与总结,提出我国对科学的态度研究中的不足以及未来努力的方向。     

夯实中华民族伟大复兴的科学根基 ——全面落实《科学素质纲要(2021—2035年)》的思考

结合参与《科学素质纲要(2021—2035年)》研究编制工作的思考和体会,全面解读这一未来15年我国公民科学素质建设的路线图,分析其制定的背景和意义,提出以"核心能力"为重点提升不同人群科学素质,阐述了五大重点人群科学素质提升行动、五项重点工程和组织实施的内容和特点,并对如何贯彻落实提出建议,以期为更好地贯彻落实《科学素质纲要(2021—2035年)》提供借鉴.     

新时代公民科学素质发展目标的制定研究

《科学素质纲要(2021—2035年)》提出2025年和2035年我国公民科学素质的发展目标,本文从我国公民科学素质发展状况和结构特征、新时代面临的主要形势和发展要求、国内外公民科学素质的发展情况和主要趋势、制定公民科学素质发展目标的主要依据等方面展开解读和分析,并阐述了实现公民科学素质发展目标对于加快建成世界科技强国、实现人的全面发展、服务国家治理体系和治理能力现代化、服务构建人类命运共同体的重要意义.     

科学素质研究中国实践解读

关于公民科学素质的研究在我国开展已有20多年。无论以中国公民科学素质调查为代表的公民科学素质调查,还是对科学素质内涵等理论上的探索,都促进了中国公民科学素质研究水平的提高。本文总结了科学素质研究在我国的一些现状及发展趋势,并对今后我国公民科学素质研究提出了参考性建议。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and sub-pixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.