基于F-CNN的雷达目标辨识算法

针对雷达真实目标、地杂波和密集假目标的辨识问题，提出了一种基于分解卷积神经网络的雷达目标辨识算法。以深度可分离卷积为基础建立分解卷积神经网络模型。为了减少模型参数，通过减少卷积核数量和全连接层连接节点数量，减少识别特征种类，建立了精简分解卷积神经网络。实测数据的处理结果表明，该算法与现有卷积神经网络方法相比，精简分解卷积神经网络对真实目标样本、地杂波样本和密集假目标样本具有更高的识别正确率，且精简模型参数数量不到现有方法的十分之一。     

一种利用多核解卷积提高雷达角分辨力的方法

解卷积方法可以提高雷达的角分辨力,但传统的解卷积算法对噪声很敏感,且有可能无解。给出了多核解卷积方法的最优滤波器,分析了多核解卷积的输出信噪比,指出其抗噪声性能要优于单核解卷积。最后将多核解卷积的方法运用到单脉冲雷达中。仿真结果表明,在输入信噪比为20dB的情况下,该方法还能够得到很好的结果。     

风廓线雷达探测降水反演雨滴谱中的反卷积算法

大气垂直运动的不均匀性展宽了降水返回信号谱,影响了雷达探测反演的雨滴谱分布。为了消除大气运动不均匀性对雨滴谱反演精度的影响,需要对雷达接收到的降水谱进行反卷积处理。研究文章提出一种改进的迭代反卷积方法,方法通过对雷达接收信号设置阈值约束条件,迭代中采用逐次逼近的方法,减小了雷达噪声扰动对反卷积的干扰。     

去卷积实现雷达方位超分辨

介绍了一种新的信号处理方法:对天线方向图和天线扫描时产生的目标方位回波通过去卷积提高雷达的方位分辨率。计算机仿真结果证明分辨率得到提高。应用雷达实测数据也证明这种去卷积实现方位超分辨的方法是可行的。     

对LFM脉冲压缩雷达的干扰研究与仿真分析

脉冲压缩雷达具有很强的抗干扰能力。分析了线性频率调制（LFM）脉冲压缩雷达的工作原理,研究了射频噪声干扰、移频干扰、卷积干扰对LFM脉压雷达的干扰效果。经过比较,射频噪声干扰干扰效果很差,将移频干扰和卷积干扰结合是一种有效并且实用的干扰方法。     

基于雷达系统抗干扰的卷积盲分离算法研究

如何提高雷达系统的抗干扰能力一直是雷达信号处理中比较关注的问题。卷积混合盲分离技术是当前盲分离研究的热点和难点。文中用卷积混合盲分离算法来分离雷达系统接收的信号,把卷积混合的干扰信号和有用信号分离开来,以实现雷达系统抗干扰的目的。该方法使用基于Householder变换的高阶累积量的联合对角化的频域方法来分离卷积混合的雷达接收信号。计算机仿真表明,该抗干扰方法可把卷积混合的雷达信号和干扰信号分离出来,且达到较好的分离效果。     

对相参MIMO雷达的卷积干扰技术

根据MIMO雷达工作特性,提出了针对单基地MIMO雷达的干扰方式,详细分析了其工作原理。在此干扰方式的基础上,针对采用线性调频信号的单基地MIMO雷达,推导了卷积干扰对其进行干扰的数学模型,分析了干扰信号的时频特性。理论分析证明,卷积干扰对LFM-MIMO雷达具有显著的干扰效果,而且采用的卷积信号不同,可以实现对MIMO雷达的假目标欺骗干扰和噪声覆盖干扰两种效果。最后,仿真实验表明理论分析的正确性。     

反卷积算法在风廓线雷达探测降水中的应用

大气垂直运动的不均匀性展宽了降水信号谱,影响了雷达探测反演的雨滴谱分布。为了消除大气运动不均匀性对雨滴谱反演精度的影响,需要对雷达接收到的降水谱进行反卷积处理。文章通过一种改进的反卷积算法对实际雷达探测降水信号进行了处理,比较分析了反卷积处理对雨滴谱反演的影响。     

基于卷积调制的脉内多假目标干扰技术研究

为对抗线性调频、相位编码等现代脉冲压缩雷达，提出了一种基于卷积调制的脉内多假目标干扰生成技术。这种干扰技术将干扰机接收到的雷达照射信号与某视频信号相卷积后转发出去。文章给出了该技术的硬件实现方案，并进行了相应的仿真试验，仿真结果证明了理论分析的正确性和实际应用的可行性。     

雷达目标辨识网络的对抗性样本分析

为了验证雷达目标辨识网络存在风险,提升基于辨识网络的雷达目标辨识效果,文中研究了不同雷达目标辨识网络的对抗性样本。针对雷达目标辨识网络中的卷积神经网络和分解卷积神经网络,建立对抗性样本生成模型,按照该模型生成对抗性样本,并对生成的结果进行分析总结。实测数据处理结果表明,雷达目标辨识网络存在潜在风险。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its