基于平板热管的大功率LED散热系统模拟及优化

为解决大功率LED的散热问题,设计了平板热管散热器来实现LED芯片的高效散热。通过Flotherm模拟软件,对大功率LED在自然对流条件下的散热情况进行了三维数值模拟。通过平板热管与常规铜、铝散热基板对比,发现平板热管有效降低了大功率功率LED的结温和热阻,使得LED温度分布更为均匀。此外,还研究了平板热管LED散热系统在不同芯片功率下的热性能,并对四种不同排布方式的LED平板热管散热系统进行了优化,发现阵列分布其温度分布最为均匀,结温最低,是较优的排布方式。     

大功率LED照明灯具的配光与散热的研究

本文通过对大功率LED照明灯具的配光与散热的研究,了解大功率LED照明灯具的使用寿命、光输出定向性、大功率LED灯珠的发光效率、散热系数等相关参数。对本公司现有的大功率LEDN明灯具产品的一次配光、二次配光、大功率LED灯珠散热进行了改进设计。大功率LED照明灯芯片加速老化、工作寿命减短等问题,因此散热是制约其发展的一个至关重要的因素。本文介绍了目前广泛运用的大功率LED灯散热技术、散热产品以及热分析工具,应用ANSYS软件针对一款大功率LED进行了热分析,求得各个部分的温度场分布,巴超出了结温的最大允许值。通过热分析,对该LED灯散热结构进行改进,将芯片最高温降为51．1226℃,仿真分析结果表明在允许范围之内,验证了改进方案的可行性。     

基于共晶焊接工艺和板上封装技术的大功率LED热特性分析

采用ANSYS有限元热分析软件,模拟了基于共晶焊接工艺和板上封装技术的大功率LED器件,并对比分析了COB封装器件与传统分立器件、共晶焊工艺与固晶胶粘接工艺的散热性能。结果表明:采用COB封装结构和共晶焊接工艺能获得更低热阻的LED灯具;芯片温度随芯片间距的减小而增大;固晶层厚度增大,芯片温度增大,而最大热应力减小。同时采用COB封装方式和共晶焊接工艺,并优化芯片间距和固晶层厚度,能有效改善大功率LED的热特性。     

大功率集成封装白光LED模组的散热研究

采用有限元分析软件ANSYS,分别对基于均温基板和金属芯印刷电路板结合太阳花散热器的100 W的大功率集成封装白光LED进行了热分析。结果发现:(1)相比金属芯印刷电路板,均温基板提高了LED芯片的均温性,可使每个LED芯片的温度分布一致,且每个芯片的最高温度比最低温度仅高1.1℃,避免了局部热点,从而提高了大功率集成封装白光LED的可靠性,保证了它的寿命。(2)太阳花散热器非常适合大功率集成封装白光LED模组的散热。因此对于大功率集成封装白光LED模组而言,均温基板结合太阳花散热器是一种有效的散热方式。     

基于热电制冷的大功率LED散热性能分析

提出了一种新型的基于热电制冷的大功率LED热管理方法。这种大功率LED阵列模块采用板上封装技术制造。为了解决散热问题,采用了热电制冷器将LED芯片产生的热量转移到周围的环境中。利用热电偶测量了大功率LED阵列模块在不同工作条件下的温度分布,LED的光学性能则通过光强分布测试仪来测试。结果表明,这种采用热电制冷的大功率LED阵列封装模块能够显著降低器件的工作温度,与不采用热电制冷器相比,基板温度能够降低36％以上,光学性能测量表明LED阵列模块的发光效率达到30．18lm／W。     

大功率氮化镓基白光LED模组的散热设计

散热设计是大功率发光二极管(LED)模组结构设计的重要环节.首先利用计算流体力学方法对自然对流条件下大功率LED模组的温度场进行了模拟,提出并优化了模组可采用的散热片结构,进而对影响模组散热的其他关键因素进行了分析,结果表明,提高关键封装材料如银胶的热导率能够有效地降低芯片温度,提高芯片温度均匀性;多芯片封装时芯片的整体温度及均匀性相对于单芯片封装皆有改善.优化后的封装结构在5 W电功率注入条件下,芯片结温约60 ℃.     

大功率LED封装有限元热分析

介绍了有限元软件在大功率LED封装热分析中的应用,对一种多层陶瓷金属(MLCMP)封装结构的LED进行了热模拟分析,比较了不同热沉材料的散热性能,模拟了输入功率以及强制空气冷却条件对芯片温度的影响.结果表明当达到热稳态平衡时,芯片上的温度最高,透镜顶部表面的温度最低,当输入功率达到3 W时,芯片温度超过了150℃,强制空冷能显著改善器件的散热性能.     

基于LED照明灯具的散热片设计与分析

新一代大功率白光LED光源具有很多优点,如节能、环保、寿命长等,但大功率LED的散热也是一个至关重要的问题。如果LED散热问题解决不好,LED灯具工作一段时间后就会输出光功率减小,芯片加速老化,工作寿命缩短。文章从LED散热问题着手,详细介绍了目前广泛商用的大功率LED器件结构及导热途径、所用散热基片的特点,以及LED所用的散热片设计和计算方法。另外介绍了一种大功率LED在散热片上不同位置温度变化的测试结果,并推导出用于计算LED器件散热的有效公式。     

非均匀芯片布局的LED模组散热性能研究

芯片阵列均匀排列的常规大功率LED模组因温度场叠加会导致中心温度过高、温度分布不均匀。在理论分析面热源温度分布函数及多热源相互影响的基础上提出了一种LED芯片外密内疏排列的模组设计方案,并与ANSYS有限元仿真的结果进行了对比验证。当芯片按照优化后的对数和幂函数分布时芯片最高温度比常规均匀排列时均低约5℃,芯片温度的方差降低约56%。外密内疏的非均匀芯片排列方案在基板较小、较薄时对散热效果的改善更好。     

大功率倒装单片集成LED芯片的自隔离散热技术

提出采用 自隔离散热技术解决大功率倒装单片集成LED芯片散热与绝缘之间的矛盾问题.基于自隔离散热技术原理,利用微纳加工技术,通过在AlN陶瓷基板上生长隔离金属岛制备自隔离散热基板.采用多胞串并联网络结构设计大功率倒装单片集成LED芯片,芯片尺寸为1.5 mmx4.5 mm.在200 mA的驱动电流下,大功率倒装单片集成LED芯片的正向电压为8.3 V,反向漏电流小于100 nA.当输入电流为2 A时,大功率倒装单片集成LED芯片的输入功率为20W,其最大光输出功率为8.3 W,插墙效率为42.08％,峰值热阻约为1.23 K/W,平均热阻约为1.17 K/W.     

如何确定大功率LED的工作电流

针对大功率LED应用,建立了大功率LED的热阻模型,分析了环境温度、器件的最大允许结温、热阻以及输入电流之间的关系,提出了一种保证器件结温低于容许最大结温的工作电流的确定方法,并给出了一个应用本方法绘制某大功率LED工作电流与环境温度的关系曲线的实例．本方法对大功率LED应用具有重要的指导意义。     

LED封装中的散热研究

文章论述了大功率LED封装中的散热问题,说明它对器件的输出功率和寿命有很大的影响,分析了小功率、大功率LED模块的封装中的散热对光效和寿命的影响。对封装及应用而言,增强它的散热能力是关键技术,指出对大功率LED和LED模块散热设计很重要,因为大功率白光LED的光效和寿命取决于其散热。目前大功率LED的重点是提高散热能力,说明封装结构和封装材料在提高大功率LED散热中的影响,LED模块的散热是未来的重点。通过选用高热导率材料可以使温度得到显著控制,重点论述了封装的关键技术,最后指出了未来LED封装技术的发展趋势。     

High power LED package with vertical structure

A LED package structure with vertical geometry of W5II is proposed for high power optoelectronic semiconductor devices. To provide an efficient and easy method of assembling high-power LEDs to sockets of the fixtures, a vertical design referenced from the typical Edison screw base found in US-based lamp systems is used in the structure. The thermal simulation of the structure, fabrication processes and thermal characteristic are evaluated. Thermal resistance measurements are performed to characterize the thermal performance of W5II, and the optical and electrical characteristics of W5II are also verified. The good heat dissipation of W5II could be utilized to enhance the reliability and thermal fatigue capability of high-power LED packages.     

大功率LED封装散热技术研究

LED被称为第四代照明光源或者绿色光源,广泛地应用于手机闪光灯、大中尺寸显示器光源模块以及特殊用途照明系统,并将被扩展至一般照明系统设备.由于LED结温的高低直接影响到LED的出光效率、器件寿命、发光波长和可靠性等,因此如何提高散热能力是大功率LED实现产业化亟待解决的关键技术之一.介绍并分析了国内外大功率LED散热封装技术的研究现状,总结了其发展趋势并提出减少内部热沉的热阻可能是今后的发展方向.     

Failure and degradation mechanisms of high-power white light emitting diodes

The investigation explores the factors that influence the long-term performance of high-power 1 W white light emitting diodes (LEDs). LEDs underwent an aging test in which they were exposed to various temperatures and electrical currents, to identify both their degradation mechanisms and the limitations of the LED chip and package materials. The degradation rates of luminous flux increased with electrical and thermal stresses. High electric stress induced surface and bulk defects in the LED chip during short-term aging, which rapidly increased the leakage current. Yellowing and cracking of the encapsulating lens were also important in package degradation at 0.7 A/85 °C and 0.7 A/55 °C. This degradation reduced the light extraction efficiency to an extent that is strongly related to junction temperature and the period of aging. Junction temperatures were measured at various stresses to determine the thermal contribution and the degradation mechanisms. The results provided a complete understanding of the degradation mechanisms of both chip and package, which is useful in designing highly reliable and long-lifetime LEDs.     

A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy

Results of an experimental study of temperature fields generated in high-power AlGaInN heterostructure flip-chip light-emitting diodes (LEDs) via their self-heating at high working currents are presented. The method of IR thermal imaging microscopy employed in the study enables a direct measurement of the temperature distribution over the p-n junction area with a high resolution of ∼3 μm at an absolute measurement error of ∼2 K. It is shown that large temperature gradients may arise in high-power LEDs at high excitation levels as a result of current crowding. This effect should be taken into account when designing lightemitting chips and estimating the admissible operation modes. The method of IR thermal imaging microscopy can also reveal microscopic defects giving rise to current leakage channels and impairing device reliability.     

Implementation of Side Effects in Thermal Characterization of RGB Full-Color LEDs

This letter presents a useful thermal-characterization method for RGB full-color light-emitting diodes (LEDs). The superposition method was employed to calculate thermal resistances of a high-power RGB full-color LED package to implement the side effect. Independent driving of a single chip in the RGB package clearly exhibited a side effect on the other two chips. It was shown that driving a red chip at 350 mA, current induced 4.8degC temperature rise for the green and blue chips, which is about 30% of the temperature rise in the red chip itself. A thermal-resistance-coupling matrix was structured and used for the calculation of the junction temperatures of the chips. It was demonstrated that the superposition method can be employed for an accurate prediction of the junction temperature rises for the RGB full-color LED package.     

Experimental study of electroluminescence and temperature distribution in high-power AlGaInN LEDs & LED arrays

Comprehensive analysis of current spreading, temperature distribution, and near-field electroluminescence of high-power “face-up” AlInGaN LEDs and LED Arrays was performed by combination of different experimental methods. Measurement results of thermal impedance and temperature distribution (mapping) of powerful light-emitting diode assemblies are described. A thermal resistance characterization consists in investigations of transient processes of temperature-sensitive parameter under heating by step-form or harmonically pulse-width modulated direct current and analysis using a thermal equivalent circuit (the Cauer and Foster models). By the involved method, thermal resistances of internal elements of the LEDs are determined. At the same time high resolution mapping of EL and thermal radiation was obtained by optical microscope and infrared images technique. It has been established correlation of the thermal resistance with a change in the current distribution (current crowding) at high excitation levels.     

Thermal Study of High-Power Nitride-Based Flip-Chip Light-Emitting Diodes

This paper presents a chip-level thermal study of high-power nitride-based flip-chip (FC) light-emitting diodes (LEDs). In order to understand the thermal performance of the high-power FC LEDs thoroughly, a quantitative parametric analysis of the thermal dependence on the chip contact area, bump configuration, and bump defects was performed by finite-elementmodel (FEM) numerical simulation and thermal infrared (IR) microscopy testing, respectively. FEM numerical simulation results proved that the optimized bump configuration design was essential to get a uniform temperature distribution in the active layer and improve the thermal performance of the FC LED. IR microscopy testing results recognized that bump defects formed in the LED chip solder processing would lead to surface hot spots around the vicinity of these bump defects, particularly under high-current working conditions. In addition, a light-emitting dark zone was also observed in the optical field for FC LEDs with bump defects. In summary, optimized LED FC bump configuration design and good bonding quality in the chip bonding process are proved to be critical for improving the thermal performance and extending the operating longevity of high-power FC LEDs.      

阵列化互连LED模组寿命分布的蒙特卡洛模拟

利用蒙特卡洛方法对阵列化互连LED模组的可靠寿命进行了模拟,假设分档后的大功率白光LED的正向电压符合正态分布,额定电流下的寿命符合对数正态分布,且寿命和电流、温度的关系符合Eying模型,研究了n×n(6≤n≤12)LED阵列的寿命分布.模拟结果表明,对于n×n LED阵列,寿命随LED数目的增加没有下降反而略有增加...