共查询到20条相似文献,搜索用时 93 毫秒
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本文为了验证大功率功率放大器在强迫风冷散热方式下的散热效果,设计了一款基于推挽式结构的大功率放大器,通过理论分析计算散热方案,使用ICEPAK散热软件仿真验证理论计算结果。考虑到功放耗散功率较大,最终采用强迫风冷和热沉的散热方式对功放进行散热。本文设计基于LDMOS功率管型号为MRF13750H,仿真设计在单频点915 MHz,输入功率35dBm时,输出功率达615W,效率为74%,耗散功率约达290 W,理论计算所需风机的风量大小为2.54 m3/min。ICEPAK软件进行仿真在耗散功率在300 W时,功率管温度为71.25℃,风机工作点为3.86 m3/min,工作静压力为201 Pa。仿真验证满足设计要求。 相似文献
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广播电视差转机风机缺相保护器山东高唐县广播电视局张兴全在各县市广播电视发射台站,中小功率发射差转机的推动级及末级功率管,大多采用风冷设备,而风机都采用三相电源供电。风机一旦出现了故障,管子得不到良好的散热,则会导致功率管损坏,从而引起发射机故障使电视... 相似文献
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<正>LDMOS功率管在雷达、无线通讯基站、无线广播发射塔等电子系统中具有广泛的应用,而该类器件对外壳的散热和可靠性有很高的要求。南京电子器件研究所最近研制成一种用于封装300 W LDMOS功率管的高可靠外壳—C312-1型多层陶瓷外壳,具有比较优异的性能。该外壳由金属底板、陶瓷框架和陶瓷盖板组成,器件采用金锡封帽工 相似文献
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<正>硅平面双极晶体管自问世以来,其频率和功率性能不断提高,发展迅速。但是,当频率提高到C波段以上时,由于其频率性能的提高与输出功率、散热性能和寄生参数等都发生了尖锐的矛盾。因此,硅微波功率管在C波段以上频段发展缓慢,并且渐渐被GaAs FET功率管所替代。然而,硅双极晶体管具有比GaAs FET低得多的相位噪声,所以,C波段硅功率管在卫星通讯等微波整机系统中仍有广泛的用途,国内的需求也非常迫切。 南京电子器件研究所硅工艺线采用先进的T形电极新结构、掺砷多晶硅发射区、BF_2。离子注入形成极薄的基区、反应等离子刻蚀技术和局部氧化等技术,用Ф75mm硅片研制成功C波段硅功率管。器件的典型微波参数是: 相似文献
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取决于金属引线框架的LED散热技术 总被引:1,自引:0,他引:1
1、前言
在功率大的LED上,能迅速排放所产生热量的技术越发重要。本公司以优于热传导性的纯铜为基础,增加微量合金元素,若用于半导体引线框架,还需要以各种形式重新排列能提高强度以及耐热性等的铜条,另外,引以为荣的是晶体功率管散热用引线框架材料异型铜条的生产量位居世界第一。该晶体功率管用引线框架的散热技术有相当一部分和LED电源相同,实际上已应用于LED电源。 相似文献
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Short-channel modeling of bulk accumulation MOSFETs 总被引:3,自引:0,他引:3
Murali R. Austin B.L. Lihui Wang Meindl J.D. 《Electron Devices, IEEE Transactions on》2004,51(6):940-947
Physically based short-channel effect (SCE) models are derived for bulk accumulation MOSFETs. Using the proposed models, threshold voltage rolloff, subthreshold swing, and subthreshold current can be accurately calculated; this enables physical insights into device scaling behavior, and prediction of scaling limits. The models enable optimization of accumulation MOSFETs, resulting in small SCE, and low process sensitivity. The models are equally applicable to inversion MOSFETs, and allow easy comparison between accumulation and inversion MOSFETs. Novel application areas of accumulation MOSFETs are identified where they perform better than inversion MOSFETs (better on-current and lower SCE for a given off-current). With mid-band metal gate, accumulation MOSFETs perform better than inversion MOSFETs in ultra low power applications. For poly gate CMOS, accumulation MOSFETs perform better than inversion MOSFETs in low standby power applications. 相似文献
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功率MOS和IGBT器件在无嵌位电感开关条件下的动态雪崩特性研究 总被引:2,自引:2,他引:0
The ability of high-voltage power MOSFETs and IGBTs to withstand avalanche events under unclamped inductive switching(UIS) conditions is measured.This measurement is to investigate and compare the dynamic avalanche failure behavior of the power MOSFETs and the IGBT,which occur at different current conditions.The UIS measurement results at different current conditions show that the main failure reason of the power MOSFETs is related to the parasitic bipolar transistor,which leads to the deterioration of the avalanche reliability of power MOSFETs.However,the results of the IGBT show two different failure behaviors.At high current mode,the failure behavior is similar to the power MOSFETs situation.But at low current mode,the main failure mechanism is related to the parasitic thyristor activity during the occurrence of the avalanche process and which is in good agreement with the experiment result. 相似文献
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倒装芯片集成电力电子模块的热设计 总被引:2,自引:0,他引:2
将倒装芯片(Flip Chip, FC)技术引入三维集成电力电子模块(Integrated Power Electronic Module,IPEM)的封装,可构建FC-IPEM.在实验室完成了由两只球栅阵列芯片尺寸封装MOSFET和驱动、保护等电路构成的半桥FC-IPEM.针对半桥FC-IPEM,建立半桥FC-IPEM的一维热阻模型,分析模块主要的热阻来源.运用FLOTHERM软件进行三维仿真,得到模块温度分布结果,给出优化模块热性能的依据. 相似文献
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Rimoon Agaiby Yang Yang Sarah H. Olsen Anthony G. ONeill Geert Eneman Peter Verheyen Roger Loo Cor Claeys 《Solid-state electronics》2007,51(11-12):1473
Electrical results are presented for deep submicron strained Si MOSFETs fabricated on both thick and thin SiGe strain relaxed buffers, SRBs. For the first time thin SRB devices are shown to offer the same performance enhancements as thick SRB devices. The reduction in performance enhancement with device scaling widely reported in the literature has also been investigated. Correcting for dynamic self-heating effects using ac measurements, the enhancements seen in long channel devices are maintained down to short channel lengths, demonstrating the scalability of SRB technology. Thermal resistances have been measured experimentally and compared with analytical models. The thermal resistance for devices on the thin SRBs is reduced by 50% compared with devices on thick SRBs. Finally, a comparison of self-heating effects in MOSFETs fabricated on SOI and Si0.8Ge0.2 SRBs provides insight into the challenges ahead as power densities continue to increase. 相似文献
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Takao Y. Shimada H. Suzuki N. Matsukawa Y. Sasaki N. 《Electron Devices, IEEE Transactions on》1992,39(9):2147-2152
Laser recrystallization of p-channel SOI MOSFETs on an undulated insulating layer is demonstrated for SRAMs with low power and high stability. Self-aligned p-channel SOI MOSFETs for loads are stacked over bottom n-channel bulk MOSFETs for both drivers and transfer gates. A sufficient laser power assures the same leakage currents between SOI MOSFETs fabricated on an undulated insulating layer in memory cell regions and on an even insulating layer in field regions. The on/off ratio of the SOI MOSFETs is increased by a factor of 104, and the source-drain leakage current is decreased by a factor of 10-102 compared with those of polysilicon thin-film transistors (TFTs) fabricated by using low-temperature regrowth of amorphous silicon. A test 256-kb SRAM fabricated this technology shows improved stand-by power dissipation and cell stability. The process steps can be decreased to 83% of those TFT load SRAMs if both the peripheral circuit and memory cells are made with p-channel SOI and n-channel bulk MOSFETs 相似文献
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A new MOS power semiconductor device with a very low on-resistance and a switching speed comparable to conventional n-channel power MOSFETs is described. The fabrication process is similar to that of an n-channel lateral DMOS transistor but with the conventional high-low `ohmic? drain contact replaced by a Schottky contact. In operation, the Schottky contact injects minority carriers to conductivity-modulate the n- drift region, thereby reducing the on-resistance by a factor of about ten compared with those of conventional n-channel power MOSFETs of comparable size and voltage capability. Furthermore, since only a small number of minority carriers are injected, the device speed is comparable to conventional n-channel power MOSFETs. 相似文献
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In this letter, we analyze the suitability of the double gate MOSFETs (DG MOSFETs) for RF-mixer applications from the point of optimizing the transconductance gain, power consumption, and area. Mixer topologies using the 0.13-/spl mu/m conventional MOSFETs, simultaneously driven DG MOSFETs (SDDG) and the independently driven DG MOSFETs (IDDG) are compared using extensive device simulations. In the frequency range 1-40 GHz, our simulation results show that the mixer circuits realized using the SDDG technologies show an order of magnitude lower power-area product, for a given transconductance gain, compared to the conventional and the IDDG technologies. 相似文献