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1.
介绍了一种单端口,端口阻抗为50 Ω的S波段宽带薄膜体声波谐振器(FBAR)滤波器,该滤波器采用网格型结构的FBAR滤波器芯片级联巴伦芯片实现.对宽带FBAR滤波器芯片的设计过程、工艺实现过程进行了说明.采用0.35 μm GaAs工艺实现了3~8 GHz频率范围的巴伦芯片,在FBAR滤波器芯片的中心频率处,幅度不平衡度为0.53 dB,相位不平衡度为0.55°.制备的FBAR滤波器通带频率范围为3 100~3 400 MHz,1 dB带宽约为369 MHz,在2 660 MHz和3 840 MHz处带外抑制分别为45.6 dBc和41.3 dBc,尺寸仅为12 mm×7 mm×2.9 mm.将实测结果与仿真结果进行了对比,两者一致性很好.  相似文献   

2.
王强  李丽  张仕强 《半导体技术》2021,46(8):630-634
采用阶梯型结构的薄膜体声波谐振器(FBAR)滤波器芯片和外匹配电路实现了一种输入输出端口阻抗均为50 Ω的宽带FBAR滤波器.FBAR滤波器芯片采用自主的FBAR滤波器工艺实现,外匹配电路采用0.35 μm GaAs工艺实现,并在该芯片上植球,采用倒装工艺将FBAR滤波器芯片与外匹配电路芯片进行异构集成.然后采用微组装工艺将异构集成芯片装配在标准陶瓷外壳中,外壳通过平行封焊工艺实现气密封装,体积仅为3.8 mm×3.8 mm×1.8 mm.测试结果显示,该滤波器通带频率范围为3 300~3 600 MHz,1 dB带宽约为300 MHz,相对带宽为8.7%,插入损耗为1.41 dB,在3 250 MHz和3 650 MHz处带外抑制分别为16.5 dBc和48.2 dBc.将实测结果与仿真结果进行了对比,两者基本吻合.  相似文献   

3.
该文研制了一种空腔型的薄膜体声波谐振器(FBAR)滤波器裸芯片。利用 FBAR一维 Mason 等效电路模型对谐振器进行设计,然后采用实际制作的谐振器模型形成阶梯型结构FBAR滤波器,利用 ADS 软件对 FBAR滤波器裸芯片进行优化设计。仿真结果表明,FBAR滤波器裸芯片尺寸为1 mm×1 mm×0.4 mm,滤波器的中心频率为3 GHz,中心插损为1.3 dB。采用空腔型结构并制备出FBAR滤波器裸芯片,同时采用覆膜工艺对FBAR裸芯片表面进行覆膜保护,避免裸芯片在使用或运输等过程中被损坏。测试结果显示,覆膜前滤波器裸芯片的中心频率为2.993 GHz,中心插损为1.69 dB;覆膜后滤波器的中心频率为2.997 GHz,中心插损为1.51 dB。对覆膜的影响和覆膜前后的差异进行了分析。  相似文献   

4.
该文研制了一种晶圆级封装(WLP)的C波段薄膜体声波谐振器(FBAR)滤波器。采用一维Mason等效电路模型对谐振器进行设计,并使用HFSS对电磁封装模型进行优化,再在ADS中对滤波器进行仿真优化设计,得到阶梯型结构的FBAR滤波器。采用空腔型结构并制备出FBAR滤波器芯片,同时利用覆膜工艺对FBAR裸芯片进行覆膜和电镀等WLP工艺,得到WLP的FBAR器件。测试结果表明,滤波器的中心频率为6.09 GHz,中心插损为2.92 dB,通带插损为3.4 dB,带宽为112 MHz,带外抑制大于40 dB。  相似文献   

5.
孙峰  张忠友 《压电与声光》2012,34(6):917-918
介绍了一种进口中频滤波器微电路模块.该中频微电路模块是中心频率为12.1 MHz,3 dB带宽240 kHz,体积仅35 mm×25 mm×5 mm的一种复合型宽带有源单片式晶体滤波器,其采用叉指结构对单片晶体滤波器的性能进行改善.通过实验证明叉指结构对单片晶体滤波器具有改善矩形系数,增加带外抑制和精密微调频率的作用.  相似文献   

6.
研制了一种以SiO2材料作为温度补偿层的S波段温度补偿型薄膜体声波谐振器(FBAR)窄带滤波器.研究了SiO:层厚度对FBAR温度漂移特性的影响,对不同厚度SiO:层时的温度补偿特性进行了仿真.仿真结果表明,当Mo/AlN/Mo的厚度为0.15,1.35和0.15 μm,SiO2层的厚度为10 nm时,FBAR的频率温度系数(TCF)约为3×10-6/℃.采用MEMS工艺制备了温度补偿型FBAR滤波器芯片并进行了测试.测试结果表明,滤波器的中心频率为2 492 MHz,中心插损为3.74 dB,3 dB带宽为17 MHz,相对带宽为0.68%,在2 477和2 507 MHz处阻带抑制分别为27.44和33.81 dBc.在三温(常温25℃、高温85℃、低温-55℃)对该滤波器的S参数进行了测试,计算得出频率温度系数为5×10-6/℃.与未加入温度补偿层的传统滤波器相比,频率温度系数改善明显.  相似文献   

7.
LC电调带通滤波器的设计   总被引:1,自引:0,他引:1  
本文采用桥接网络法设计了一个LC电调带通滤波器,1dB通带连续可调范围为:110~125MHz至110~155MHz、体积为25mm×13mm×7mm。对桥接网络法的椭圆类型滤波器做了深一层研究,找到了提高其矩形系数及带外抑制的改进方法。  相似文献   

8.
该文介绍了一种单端口、端口阻抗50 Ω的S波段薄膜体声波谐振器(FBAR)陷波器,其采用了梯形拓扑结构与外围匹配电路相结合的方式。对FBAR陷波器芯片的设计过程、工艺实现进行了说明。测试制备的FBAR陷波器,其陷波频段为2 399~2 412 MHz,陷波抑制达35 dBc;通带频率分别为1 800~2 300 MHz和2 500~2 800 MHz,通带插损仅1 dB;3 dBc开口宽度为69 MHz。FBAR陷波器芯片尺寸为1.2 mm×1.2 mm×0.35 mm。结果表明,陷波器实测与仿真结果两者相吻合。  相似文献   

9.
为了表征制备的L波段体声波(BAW)滤波器的性能,采用射频探针台和矢量网络分析仪片上测试获得了BAW滤波器的S参数;在ADS软件环境下计算了BAW滤波器的各项性能参数。比较实测与仿真得到的S参数曲线,发现:低阻硅衬底会使BAW滤波器的带内插损显著增加;BAW滤波器中各薄膜体声波谐振器(FBAR)单元的薄膜沉积厚度误差会使BAW滤波器的带内波动偏大,且FBAR薄膜厚度较设计值增大时BAW滤波器的中心频率会向下偏移。以制备的一只BAW滤波器为例,测得其中心频率为1 495MHz,带宽为17MHz,带内插损为-46.413dB,带内波动为2.816dB,带外抑制为-72.525dB/-79.356dB,电压驻波比为1.940。该文给出的BAW滤波器片上测试与性能表征方法具有通用性。  相似文献   

10.
魏强 《压电与声光》2019,41(5):621-626
为解决滤波器带外抑制和通带内相位波动之间的矛盾,该文介绍了一种线性相位LC滤波器的设计方法,通过对滤波器传输零点特性进行分析,根据指标要求灵活设计电路拓扑结构和零点位置,采用内、外均衡电路级联网络两种方法,来实现具有高矩形、线性相位特性的滤波器。设计了中心频率21.4 MHz、0.5 dB带宽大于10 MHz、矩形系数(45 dB/0.5 dB)小于2、带内相位波动绝对值小于5°和中心频率1 300 MHz、1 dB带宽大于200 MHz、矩形系数(35 dB/1 dB)小于2、带内相位波动绝对值小于5°两款滤波器。该方法工程实用化强,便于调试和制作,可应用于幅相特性要求高的微波系统中,提高了系统性能指标。  相似文献   

11.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

12.
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's.  相似文献   

13.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.  相似文献   

14.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.  相似文献   

15.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.  相似文献   

16.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

17.
Waveguide multilayer optical card (WMOC) is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling & processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic (VB) language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.  相似文献   

18.
It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output(MIMO) communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.  相似文献   

19.
In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.  相似文献   

20.
High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.  相似文献   

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