MMIC在片测试探头的研究与设计

微波单片集成电路（MMIC）在片测试技术是应用于MMIC和高速集成电路研究、生产的新型测试技术。MMIC在片测试探头是MMIC在片测试系统的关键部件。本文研究并设计了介质基片共面波导（CPW）探头,测试并分析了探头性能。该探头在2－18GHz范围内插入损耗小于1．5dB,回波损耗大于16dB。     

X波段功率单片放大器的研制

介绍了X波段功率单片放大器的设计、制造、测试等技术,以及器件的大信号模型的建立.X波段功率单片放大器采用两级放大,经过功率分配和功率合成,输入输出匹配为50 Ω,单片性能达到输出功率≥5W,附加效率≥33%,功率增益≥13.5dB,增益波动≤0.3dB,输入驻波比≤2?1.     

宽带GaN单片功率放大器研究

基于GaN HEMT器件在微波功率方面的优越性能,设计并实现了宽带GaN单片功率放大器.简述了AlGaN/GaN异质结构的优势以及现状,同时结合热分析的方法给出了所选GaN HEMT器件的基本尺寸和性能,并采用ICCAP提取了合适的大信号模型,通过器件性能优选拓扑结构,最终运用宽带匹配的方法并结合较先进的仿真软件设计了一款GaN宽带单片功率放大器.测试结果表明,单片放大器脉冲工作方式下在2～7 GHz频带内,小信号增益G＞18 dB,输入回损＜-10 dB,脉冲饱和输出功率Po＞5 W,功率增益GP＞15 dB,典型功率附加效率25%(测试条件为脉宽100μs,占空比10%).GaN HEMT器件具有较高的功率密度和良好的宽带特点.     

P波段脉冲调制激励放大组件

叙述一种Ｐ波段脉冲调制激励放大组件的设计方法及测试结果，采用微波单片集成电路和微波功率晶体管内匹配技术，制作出５４０－６１０ＭＨｚ下增益ＧＰ≥３０ｄＢ、输出功率ＰＯ≥５Ｗ±０．５ｄＢ的脉冲功率放大器。     

8毫米GaAs功率单片集成电路

介绍了以栅宽０．４ｍｍ器件为基础的８ｍｍ单级单片ＩＣ的设计、制造及性能测试等。该单片在３２￣３３ＧＨｚ，输出功率大于１００ｍＷ，增益大于３ｄＢ，最大输出功率达１５０ｍＷ。     

P波段脉冲调制激励放大组件

叙述一种Ｐ波段脉冲调制激励放大组件的设计方法及测试结果，采用微波单片集成电路和微波功率晶体管内匹配技术，制作出５４０～６１０ＭＨｚ下增益Ｇｐ≥３０ｄＢ、输出功率Ｐｏ≥５Ｗ±０．５ｄＢ的脉冲功率放大器。     

GaAs单片集成激光器驱动电路在片测量

用多触头微波探针,对GaAs单片集成激光器驱动电路芯片进行了在片测试和筛选,测得芯片频率响应带宽为3.8GHz.使用高速增益开关半导体激光器作为采样光脉冲源,采用了背面直接采样方式建立了电光采样测试仪.检测了GaAs单片集成激光器驱动电路芯片内部点的高速电信号波形.     

GaAs单片集成激光器驱动电路在片测量

用多触头微波探针 ,对 Ga As单片集成激光器驱动电路芯片进行了在片测试和筛选 ,测得芯片频率响应带宽为 3.8GHz.使用高速增益开关半导体激光器作为采样光脉冲源 ,采用了背面直接采样方式建立了电光采样测试仪 .检测了 Ga As单片集成激光器驱动电路芯片内部点的高速电信号波形 .     

全离子注入C波段功率单片放大器及内匹配功率单片放大器

报道了全平面C波段功率单片放大器及四单片合成放大器研究结果。单片放大器采用全离子注入工艺，均匀性好，平均成品率40％，可靠性高。工作频率4．7—5．2GHZ，中心频率5．0GHz处输出功率2．5W，增益15dB，功率附加效率31．5％。单片放大器芯片面积2．8mm×2．0mm，四路合成的4×MMIC频率范围不变，中心频率4．95GHz处输出功率8．2W，增益13dB，功率附加效率26％，四路合成效率接近80％。实验结果与理论预测基本吻合。     

Ku波段GaAs单片功率放大器

基于GaAs PHEMT在微波领域的卓越性能,设计并实现了两款Ku波段GaAs单片功率放大器。简述了GaAs PHEMT器件的工作原理,并抽取了精准的EEHEMT模型,通过独特的设计方法并结合相应的仿真软件设计了两款Ku波段单片功率放大器。经过精准测试,两款电路呈现的性能如下:在13～14GHz频带内,其中第一款电路的饱和输出功率Po>38dBm(脉宽100μs,占空比10%),功率增益GP>20dB,典型功率附加效率PAE>28%;第二款电路的饱和输出功率Po>40dBm(脉宽100μs,占空比10%),功率增益GP>19dB,典型功率附加效率PAE>28%。结果表明,基于PHEMT的GaAs单片功率放大器在Ku波段可以实现优良的性能。     

GaAs HFET/PHEMT大信号建模分析

在分析GaAs HFET／PHEMT建模设计、在片校准和测试方法的基础上，提出了电荷守恒的EEHEMT1模型，通过Cold FET测量技术，采用在片测试技术，结合窄脉冲测试技术，提出了GaAs HFET／PHEMT器件EEHEMT1大信号模型，实验说明提出的大信号模型模拟结果与实例结果吻合得很好．     

First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies

We present on-wafer power measurements of 35 nm gate length InP HEMT amplifiers at 330 GHz. Various amplifiers are examined. The maximum output power of 1.78 mW is measured from a three stage amplifier. Additional output power may be possible but limited by our input power source level to saturate amplifiers. This result is the highest frequency on-wafer power measurement we are aware of reported to date, and demonstrates the technique we utilize to be a fast method of evaluating power performance of submillimeter wave amplifiers without the need to package devices.     

21~28GHz波段平衡式放大器

采用OMM IC的0.2μm PHEM T工艺设计了工作在21~28 GH z的平衡式放大器。正交耦合电桥采用兰格电桥。兰格电桥和平衡式放大器的在片测试结果和仿真结果基本吻合,平衡式放大器在21~28 GH z的增益为18~20 dB,输入和输出回波损耗小于-20 dB,在26 GH z处的输出1 dB压缩点功率为21 dBm。     

军队医院建立应急医学信息服务保障系统的意义

采用电路设计与原理分析相结合的方法对坡莫合金压磁式测力传感器测试系统的交-直变换电路进行了研究.针对坡莫合金压磁式测力传感器的特点,设计了传感器测试系统及交-直变换电路,并对交-直变换电路中的电源、功放、精密整流滤波电路、电压调整器、仪用放大器、低通滤波器等关键组成部件进行了深入探讨.所设计的交-直变换方案保持了传统电桥高灵敏度的优点,测试实验验证了电路的合理性.     

模拟预失真在高功率放大器中的应用

通信技术的发展对于功率放大器的要求越来越高，主要需求集中在高线性高效率的功放。前馈是目前改善功放线性比较好的方法，但是该方法的一个问题是降低了功放的效率。文中使用模拟预失真技术与前馈技术相结合，通过相应的分析与试验，证明该方法可以在不恶化线性指标的前提下提高功放前馈系统的效率。     

Beyond G-band: a 235 GHz InP MMIC amplifier

We present results on an InP monolithic millimeter-wave integrated circuit (MMIC) amplifier having 10-dB gain at 235GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07-/spl mu/m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for S-parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230GHz.     

Design and fabrication of a wideband 56- to 63-GHz monolithic poweramplifier with very high power-added efficiency

This paper describes the design, fabrication, and measurement of a wideband 60 GHz monolithic microwave integrated circuit (MMIC) power amplifier that has demonstrated via on-wafer continuous wave (CW) measurement a record 43% power-added efficiency (PAE) at an associated output power of 224 mW and 7.5 dB of power gain. At a higher drain bias of 3.5 V, the CW output power increased to 250 mW with 38.5% PAE. Additional performance improvement is expected when the MMICs are tested on-carrier with proper heat sinking. These state-of-the-art first-pass design results can be attributed to: 1) the use of a fully selective gate recess etch 0.12-μm InP HEMT process fabricated on 2-mm-thick 3-in diameter InP substrates with slot via holes; 2) a design based on a novel on-wafer load-pull measurement technique; and 3) an accurate large-signal nonlinear model for InP HEMTs. In order to reach the low cost required for mass production, the same MMIC design was fabricated on an InP metamorphic HEMT (MHEMT) process. The MHEMT version of the MMIC demonstrated 41.5% PAE, with an associated output power of 183 mW (305 mW/mm) and 6.9 dB of power at 60 GHz when measured CW on-wafer. These InP HEMT and MHEMT results are, to our knowledge, the highest PAE and power bandwidth ever reported at V-band     

宽带W波段低噪声放大器的设计与制作

基于未来低功耗毫米波接收前端的应用,采用InP HEMT工艺实现了一种W波段宽带低噪声放大器.该放大器采用边缘耦合线用于级间的隔离,扇形短截线用于RF旁路,偏置网络采用薄膜电阻和扇形短截线以保持放大器的稳定性.采用3 mm噪声测试系统对单片进行在片测试.测试结果显示在80～102 GHz,噪声系数小于5 dB,相关增益大于19 dB.五级电路的栅、漏分别连在一起方便使用,芯片面积3.6 mm×1.7 mm,功耗30 mW.     

Testing System Based on Virtual Instrument for Readout Circuit of Infrared Focal Plane Array

Readout integrated circuit（ROIC） is one of the most important components for hybrid-integrated infrared focal plane array（IRFPA）. And it should be tested to ensure the product yield before bonding. This paper presents an on-wafer testing system based on Labview for ROIC of IRFPA. The quantitative measurement can be conducted after determining whether there is row crosstalk or not in this system. This low-cost system has the benefits of easy expansion, upgrading, and flexibility, and it has been employed in the testing of several kinds of IRFPA ROICs to measure the parameters of saturated output voltage, nonuniformity, dark noise and dynamic range, etc.     

Real-time linear time-domain network analysis using picosecondphotoconductive mixer and samplers

Ion-implanted GaAs photoconductive (PC) switches have been used as an optical-microwave frequency mixer and electrical waveform samplers in a real-time sampling system. This high fidelity system has a bandwidth of 100-GHz, time resolution of 4-ps and a measurement sensitivity of 5-μV/√(Hz). Because of this high sensitivity capability, the magnitude of the testing signal can be maintained sufficiently small to allow network analysis of a device or circuit in the linear mode without signal distortion. In this paper, a linear time-domain network analysis of a broadband monolithic microwave integrated circuit (MMIC) amplifier has been demonstrated in real-time by the optoelectronic technique. A measurement time of less than 40 μs is used to acquire waveform data. The dynamic range of the system can be further improved to 40 dB by reducing the repetition rate of the step recovery diode. Since the PC switches are fabricated with processes compatible to MMIC manufacturing, this real-time system is well-suited for on-wafer MMIC characterization