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多晶硅太阳电池的氮化硅钝化 总被引:3,自引:0,他引:3
全面介绍了等离子增强化学汽相沉积(PECVD)纳米氮化硅(SiNx:H)光电薄膜的技术发展及现状,分析了PECVD法沉积的SiNx:H薄膜对多晶硅太阳电池的体钝化和表面钝化机理。 相似文献
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采用CdTe/ZnS复合钝化技术对长波HgCdTe薄膜进行表面钝化,并对钝化膜生长工艺进行了改进。采用不同钝化工艺分别制备了MIS器件和二极管器件,并进行了SEM、C-V和I-V表征分析,研究了HgCdTe/钝化层之间的界面特性及其对器件性能的影响。结果表明,钝化工艺改进后所生长的CdTe薄膜更为致密且无大的孔洞,CdTe/HgCdTe界面晶格结构有序度获得改善;采用改进的钝化工艺制备的MIS器件C-V测试曲线呈现高频特性,界面固定电荷面密度从改进前的1.671011 cm-2下降至5.691010 cm-2;采用常规钝化工艺制备的二极管器件在较高反向偏压下出现较大的表面沟道漏电流,新工艺制备的器件表面漏电现象获得了有效抑制。 相似文献
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《红外技术》2015,(10):868-872
HgCdTe表面/界面特性对器件性能具有重要的影响,表面/界面的状态主要依赖于表面处理和钝化工艺。采用Br2/CH3OH腐蚀液对液相外延(LPE)生长的中波HgCdTe薄膜进行表面处理后,使用Cd Te/Zn S复合钝化技术进行表面钝化,制备了相应的MIS器件并进行器件C-V测试。结果表明,HgCdTe/钝化层界面固定电荷极性为正,面密度为2.1×1011 cm-2,最低快界面态密度为1.43×1011 cm-2·e V-1,在10 V栅压极值下慢界面态密度为4.75×1011 cm-2,较低的快界面态密度体现出了CdTe/ZnS复合钝化技术的优越性。 相似文献
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首先,回顾了氧化铝钝化技术的发展历程,对制备氧化铝钝化薄膜的手段进行了总结,并且详细描述了氧化铝的材料性质和钝化的机理。其次,指出氧化铝薄膜的优点在于优异的场效应钝化特性和良好的化学钝化性质,因此可以应用于低掺和高掺p型硅表面的钝化。此外,氧化铝薄膜及其叠层还具有良好的热稳定性,符合丝网印刷太阳电池的要求。最后,总结了氧化铝薄膜钝化技术在晶体硅太阳电池中的最新研究动态,指出氧化铝钝化薄膜用于工业生产中存在的问题,并针对这些问题提出了有效的解决方案。 相似文献
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玻璃衬底多晶硅薄膜太阳电池因具有成本低廉、转换效率高以及性能稳定等优点引起了人们的广泛关注。详细阐述了玻璃衬底多晶硅薄膜太阳电池的两种典型结构、基本制备流程及其关键工艺对太阳电池性能的影响,还介绍了玻璃衬底制备多晶硅薄膜的直接制备技术、固相晶化技术、液相晶化技术和籽晶层技术以及玻璃衬底多晶硅薄膜太阳电池的研究现状。由于薄膜太阳电池性能的好坏直接取决于薄膜的质量,所以关键工艺中的快速热退火和氢钝化能显著提高电池性能。然而,至今各种制备方法都不够成熟,不能规模化制备多晶硅薄膜,因此改进和发展现有多晶硅薄膜的制备技术是今后玻璃衬底多晶硅薄膜太阳电池研究的核心课题。 相似文献
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通过NO、N2O对Ge衬底进行表面钝化,然后采用反应磁控共溅射方法制备HfTiN薄膜,并利用湿N2气氛退火,将HfTiN转化为HfTiON高k栅介质.研究了表面钝化对Ge MOS器件性能的影响.实验结果表明,湿NO表面钝化能生长高质量GeOxNy界面层,有效降低MOS电容的栅极漏电流,增强器件的可靠性. 相似文献
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硫钝化Ⅲ-Ⅴ族半导体生长高质量薄膜 总被引:3,自引:0,他引:3
表面钝化是Ⅲ-Ⅴ旅半导体工艺的难题之一,硫钝化技术是目前解决这一难题最有效的方法,文中综述了硫钝化技术在钝化Ⅲ-Ⅴ族半导体生长高质量薄膜所取得的成就。 相似文献
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In this paper, a new hydrogenation process of poly-Si thin film for the fabrication of poly-Si thin film transistors (TFTs) is proposed. In the new approach, the hydrogenation of TFTs is performed before deposition of contact metal. N-channel and p-channel poly-Si TFTs with various channel lengths and widths were fabricated with the new and conventional processes for comparison. The results verified that the efficiency of hydrogenation has been improved remarkably by the new process. The field-effect mobility of carriers, the on state current, threshold voltage and the on/off states current ratio have been greatly improved, and the trap state density has been reduced significantly. 相似文献
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We have examined the performance and hot-carrier stress reliability of n-channel polycrystalline silicon (poly-Si) thin film
transistors (TFTs) on RCA-leached glass. We have found out that the TFT’s performance and reliability are improved by RCA-leaching
of the glass when compared to TFTs on bare glass due to the formation of a silica-rich layer on the glass surface by the RCA-leaching.
The silica-rich layer acts as a barrier for impurity diffusion from glass as well as it modifies the poly-Si/glass interface
which determines the physical structure of the active poly-Si. 相似文献
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ZENG Xiang-bin XU Zhong-yang DAI Yong-bin WANG Chang-an ZHOU Xue-mei ZHAO Bo-feng 《半导体光子学与技术》2000,6(2):96-99,104
A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated. Using this approach, we fabricated poly-Si thin film transistors with electron mobility of 103 cm2/V·s and on/off current ratio of 1×10~7.They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization. We also analyzed the structure of the laser crystallized poly-Si thin film by spectroscopic ellipsometry, and proposed the models to simulate the poly-Si thin film and calculated the ellipsometric spectra. The calculated results are in good agreement with the measured results. 相似文献
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The poly-Si thin film was obtained by electric field-enhanced metal-induced lateral crystallization technique at low temperature. Raman spectra, X-ray diffraction (XRD) and scan electron microscope (SEM) were used to analyze the crystallization state, crystal structure and surface morphology of the poly-Si thin film. Results show that the poly-Si has good crystallinity, and the electric field has the effect of enhancing the crystallization when DC electric voltage is added to the film during annealing. Secondary ion mass spectroscopy (SIMS) shows that the metal Ni improves the crystallization by diffusing into the a-Si thin film, so the crystallization of the lateral diffused region of Ni is the best. The p-channel poly-Si thin film transistors (TFTs) were fabricated by this large-size grain technique. The IDS−VDS and the transfer characteristics of the TFTs were measured, from which, the hole mobility of TFTs was 65 cm2/V s, the on and off current ratio was 5×106. It is a promising method to fabricate high-performance poly-Si TFTs at low temperature for applications in AMLCD and AMOLED. 相似文献
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We demonstrate that high-transconductance organic thin film transistors can be achieved by depositing electrochemically exfoliated graphene flakes at the gate-dielectric/organic semiconductor (OS) interface. This effect is applicable to both, solution processed, polymer-based and vacuum-evaporated small-molecule OS-based transistors. Poly(3-hexylthiophene) (P3HT) transistors exhibit a factor of seven higher charge carrier mobility, while pentacene transistors exhibit a fourfold increase in charge carrier mobility, if graphene flakes are present at the dielectric/OS interface. 相似文献
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Chia-Wen Chang Chih-Kang Deng Shih-Chieh Wu Jiun-Jia Huang Hong-Ren Chang Tan-Fu Lei 《Display Technology, Journal of》2008,4(2):173-179
The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) with high-k Pr2O3 as gate dielectric is investigated for the first time. Using the Pr2O3 gate dielectric can obtain a high gate capacitance density and thin equivalent-oxide thickness, exhibiting a greatly enhancement in the driving capability of TFT device. Introducing fluorine ions into the poly-Si film by fluorine ion implantation technique can effectively passivate the trap states in the poly-Si film and at the Pr2O3/poly-Si interface to improve the device electrical properties. The Pr2O3 TFTs fabricated on fluorine-implanted poly-Si film exhibit significantly improved electrical performances, including lower threshold voltage, steeper subthreshold swing, higher field-effect mobility, lower off-state leakage current, and higher on/off current ratio, as compared with the control poly-Si Pr2O3 TFTs. Also, the incorporation of fluorine ions also improves the reliability of poly-Si Pr2O3 TFTs against hot-carrier stressing, which is attributed to the formation of stronger Si-F bonds. Furthermore, superior threshold-voltage rolloff characteristic is also demonstrated in the fluorine-implanted poly-Si Pr2O3 TFTs. Therefore, the proposed scheme is a promising technology for high-performance and high-reliability solid-phase crystallized poly-Si TFT. 相似文献
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因酞菁薄膜平面具有多电子共轭大π键结构,本文采用异质诱导的方式对酞菁薄膜的生长特性进行了改善研究。采用高掺杂硅为栅极,氧化硅为绝缘层,生长α-四噻吩或p-六联苯薄膜为异质诱导层,制备了酞菁铜有机薄膜晶体管。利用原子力显微镜研究薄膜生长特性,并对比研究了2种诱导层对薄膜晶体管性能的影响。实验结果表明:α-四噻吩上生长的酞菁铜薄膜,形貌呈片状,而p-六联苯上生长的酞菁铜薄膜,形貌呈针状,均与单层酞菁铜棒状形貌不同。同时,α-四噻吩与p-六联苯薄膜上生长酞菁铜后,两者晶体管电性能都有不同程度的提高,均比单层酞菁铜提高了1~2个数量级,表明α-四噻吩或p-六联苯对酞菁铜薄膜均有诱导效应,可以获得高性能的有机薄膜晶体管。 相似文献