Highly Robust Indium‐Free Transparent Conductive Electrodes Based on Composites of Silver Nanowires and Conductive Metal Oxides

A hybrid approach for the realization of In‐free transparent conductive layers based on a composite of a mesh of silver nanowires (NWs) and a conductive metal‐oxide is demonstrated. As metal‐oxide room‐temperature‐processed sol–gel SnO_x or Al:ZnO prepared by low‐temperature (100 °C) atomic layer deposition is used, respectively. In this concept, the metal‐oxide is intended to fuse the wires together and also to “glue” them to the substrate. As a result, a low sheet resistance down to 5.2 Ω sq^‐1 is achieved with a concomitant average transmission of 87%. The adhesion of the NWs to the substrate is significantly improved and the resulting composites withstand adhesion tests without loss in conductivity. Owing to the low processing temperatures, this concept allows highly robust, highly conductive, and transparent coatings even on top of temperature sensitive objects, for example, polymer foils, organic devices. These Indium‐ and PEDOT:PSS‐free hybrid layers are successfully implemented as transparent top‐electrodes in efficient all‐solution‐processed semitransparent organic solar cells. It is obvious that this approach is not limited to organic solar cells but will generally be applicable in devices which require transparent electrodes.     

Transparent Ultrathin Oxygen‐Doped Silver Electrodes for Flexible Organic Solar Cells

An effective method for depositing highly transparent and conductive ultrathin silver (Ag) electrodes using minimal oxidation is reported. The minimal oxidation of Ag layers significantly improves the intrinsic optical and structural properties of Ag without any degradation of its electrical conductivity. Oxygen‐doped Ag (AgO_x) layers of thicknesses as low as 6 nm exhibit completely 2D and continuous morphologies on ZnO films, smaller optical reflections and absorbances, and smaller sheet resistances compared with those of discontinuous and granular‐type Ag layers of the same thickness. A ZnO/AgO_x/ZnO (ZAOZ) electrode using an AgO_x (O/Ag = 3.4 at%) layer deposited on polyethylene terephthalate substrates at room temperature shows an average transmittance of 91%, with a maximum transmittance of 95%, over spectral range 400?1000 nm and a sheet resistance of 20 Ω sq^?1. The average transmittance value is increased by about 18% on replacing a conventional ZnO/Ag/ZnO (ZAZ) electrode with the ZAOZ electrode. The ZAOZ electrode is a promising bottom transparent conducting electrode for highly flexible inverted organic solar cells (IOSCs), and it achieves a power conversion efficiency (PCE) of 6.34%, whereas an IOSC using the ZAZ electrode exhibits a much lower PCE of 5.65%.     

Electrically conductive anti‐reflecting nanostructure for chalcogenide thin‐film solar cells

Electrically conducting aluminum (Al)‐doped ZnO nanorods (NRs) film has been introduced as an anti‐reflective (AR) layer for effective light trapping in chalcogenide thin‐film solar cells. Results indicate that the Al‐doping significantly reduced the electrical contact resistance between the Ag top electrode and the AR layer. The Al‐doped ZnO NRs exhibited low average reflectance (4.5%) over the entire visible and near‐infrared range, and changed the nature of electrical contact between the Ag electrode and the AR layer from Schottky to Ohmic. Finally, the CuInS₂ solar cell coated with the Al‐doped ZnO NRs exhibited huge enhancement in photovoltaic efficiency from 9.57% to 11.70% due to the lowering series resistance and the increase in the short‐circuit current density, when compared with that of a solar cell without the AR layer. Copyright © 2014 John Wiley & Sons, Ltd.     

Molecule Charge Transfer Doping for p‐Channel Solution‐Processed Copper Oxide Transistors

The doping of semiconductors plays a critical role in improving the performance of modern electronic devices by precisely controlling the charge carrier density. However, the absence of a stable doping method for p‐type oxide semiconductors has severely restricted the development of metal oxide‐based transparent p–n junctions and complementary circuits. Here, an efficient and stable doping process for p‐type oxide semiconductors by using molecule charge transfer doping with tetrafluoro‐tetracyanoquinodimethane (F₄TCNQ) is reported. The selections of a suitable dopant and geometry play a crucial role in the charge‐transfer doping effect. The insertion of a F₄TCNQ thin dopant film (2–7 nm) between a Au source‐drain electrode and solution‐processed p‐type copper oxide (Cu_xO) film in bottom‐gate top‐contact thin‐film transistors (TFTs) provides a mobility enhancement of over 20‐fold with the desired threshold voltage adjustment. By combining doped p‐type Cu_xO and n‐type indium gallium zinc oxide TFTs, a solution‐processed transparent complementary metal‐oxide semiconductor inverter is demonstrated with a high gain voltage of 50. This novel p‐doping method is expected to accelerate the development of high‐performance and reliable p‐channel oxide transistors and has the potential for widespread applications.     

Flash‐Assisted Processing of Highly Conductive Zinc Oxide Electrodes from Water

Fabricating high‐quality transparent conductors using inexpensive and industrially viable techniques is a major challenge toward developing low cost optoelectronic devices such as solar cells, light emitting diodes, and touch panel displays. In this work, highly transparent and conductive ZnO thin films are prepared from a low‐temperature, aqueous deposition method through the careful control of the reaction chemistry. A robotic synthetic platform is used to explore the wide parameter space of a chemical bath system that uses only cheap and earth abundant chemicals for thin film deposition. As‐deposited films are found to be highly resistive, however, through exposure to several millisecond pulses of high‐intensity, broadband light, intrinsically doped ZnO films with sheet resistances as low as 40 Ω □^?1 can be readily prepared. Such values are comparable with state‐of‐the‐art‐doped transparent conducting oxides. The mild processing conditions (<150 °C) of the ZnO electrodes also enable their deposition on temperature sensitive substrates such as PET, paving the way for their use in various flexible optoelectronic devices. Proof‐of‐concept light emitting devices employing ZnO as a transparent electrode are presented.     

Highly Stable Ni‐Based Flexible Transparent Conducting Panels Fabricated by Laser Digital Patterning

A novel simple laser digital patterning process to fabricate Ni‐based flexible transparent conducting panels using solution‐processed nonstoichiometric nickel oxide (NiO_x) thin films and their applications for flexible transparent devices are reported in this study. A large‐scale synthesis route to produce NiO_x nanoparticle (NP) ink is also demonstrated. A low‐power continuous‐wave laser irradiation photothermochemically reduces and sinters selected areas of a NiO_x NP thin film to produce Ni electrode patterns. Owing to the innovative NiO_x NP ink and substantially lowered applied laser power density, Ni conductors can be fabricated, for the first time to the best of the authors' knowledge, even on a polyethylene terephthalate substrate, which is known to have one of the lowest glass‐transition temperatures among polymers. The resultant Ni electrodes exhibit a high‐temperature oxidation resistance up to approximately 400 °C, and high corrosion resistance in tap water and even in seawater. Moreover, a superior mechanical stability of the Ni conductors is confirmed by tape‐pull, ultrasonic‐bath, bending/twisting, and cyclic bending (up to 10 000 cycles) tests. Finally, flexible transparent touch screen panels and electrical heaters are fabricated with mesh‐type Ni conductors to demonstrate possible applications.     

Application of Inhibitor‐Loaded Halloysite Nanotubes in Active Anti‐Corrosive Coatings

Halloysite particles are aluminum‐silicate hollow cylinders with a length of 0.5–1 µm, an outer diameter of ca. 50 nm and a lumen of 15 nm. These nanotubes are used for loading and sustained release of corrosion inhibitors. The inhibitor is kept inside the particles infinitely long under dry conditions. Here, halloysite nanotubes filled with anticorrosive agents are embedded into a SiO_x–ZrO_x hybrid film. An aluminum plate is dip‐coated and immersed into 0.1 M sodium chloride aqueous solution for corrosion tests. A defect in the sol–gel coating induces pitting corrosion on the metal accompanied by a strong anodic activity. The inhibitor is released within one hour from halloysite nanotubes at corrosion spots and suppresses the corrosion process. The anodic activity is successfully restrained and the protection remains for a long time period of immersion in NaCl water solution. The self‐healing effect of the sol–gel coating doped with inhibitor‐loaded halloysite nanotubes is demonstrated in situ via scanning vibrating electrode technique measurements.     

Silicon thin‐film solar cells with rectangular‐shaped grating couplers

As an alternative to randomly textured transparent conductive oxides as front contact for thin‐film silicon solar cells the application of transparent grating couplers was studied. The grating couplers were prepared by sputtering of aluminium‐doped zinc oxide (ZnO) on glass substrate, a photolithography and a lift‐off process and were used as periodically textured substrates. The period size and groove depth of these transparent gratings were tuned independently from each other and varied between 1 and 4 μm and 100–600 nm. The optical properties of rectangular‐shaped gratings and the opto‐electronic behaviour of amorphous and microcrystalline silicon solar cells with integrated grating couplers as a function of the grating parameters (period size P and groove depth h_g) are presented. The optical properties of the gratings are discussed with respect to randomly textured substrates and the achieved solar cell results are compared with the opto‐electronic properties of solar cells deposited on untextured (flat) and randomly textured substrates. Copyright © 2005 John Wiley & Sons, Ltd.     

Enhanced Performance of I2‐Free Solid‐State Dye‐Sensitized Solar Cells with Conductive Polymer up to 6.8%

An iodine‐free solid‐state dye‐sensitized solar cell (ssDSSC) is reported here, with 6.8% energy conversion efficiency—one of the highest yet reported for N719 dye—as a result of enhanced light harvesting from the increased transmittance of an organized mesoporous TiO₂ interfacial layer and the good hole conductivity of the solid‐state‐polymerized material. The organized mesoporous TiO₂ (OM‐TiO₂) interfacial layer is prepared on large‐area substrates by a sol‐gel process, and is confirmed by scanning electron microscopy (SEM) and grazing incidence small‐angle X‐ray scattering (GISAXS). A 550‐nm‐thick OM‐TiO₂ film coated on fluorine‐doped tin oxide (FTO) glass is highly transparent, resulting in transmittance increases of 8 and 4% compared to those of the bare FTO and conventional compact TiO₂ film on FTO, respectively. The high cell performance is achieved through careful control of the electrode/hole transport material (HTM) and nanocrystalline TiO₂/conductive glass interfaces, which affect the interfacial resistance of the cell. Furthermore, the transparent OM‐TiO₂ film, with its high porosity and good connectivity, exhibits improved cell performance due to increased transmittance in the visible light region, decreased interfacial resistance ( Ω ), and enhanced electron lifetime ( τ ). The cell performance also depends on the conductivity of HTMs, which indicates that both highly conductive HTM and the transparent OM‐TiO₂ film interface are crucial for obtaining high‐energy conversion efficiencies in I₂‐free ssDSSCs.     

Ligand‐Free Synthesis of Aluminum‐Doped Zinc Oxide Nanocrystals and their Use as Optical Spacers in Color‐Tuned Highly Efficient Organic Solar Cells

The color of polymer solar cells using an opaque electrode is given by the reflected light, which depends on the composition and thickness of each layer of the device. Metal‐oxide‐based optical spacers are intensively studied in polymer solar cells aiming to optimize the light absorption. However, the low conductivity of materials such as ZnO and TiO₂ limits the thickness of such optical spacers to tenths of nanometers. A novel synthesis route of cluster‐free Al‐doped ZnO (AZO) nanocrystals (NCs) is presented for solution processing of highly conductive layers without the need of temperature annealing, including thick optical spacers on top of polymer blends. The processing of 80 nm thick optical spacers based on AZO nanocrystal solutions on top of 200 nm thick polymer blend layer is demonstrated leading to improved photocurrent density of 17% compared to solar cells using standard active layers of 90 nm in combination with thin ZnO‐based optical spacers. These AZO NCs also open new opportunities for the processing of high‐efficiency color tuned solar cells. For the first time, it is shown that applying solution‐processed thick optical spacer with polymer blends of different thicknesses can process solar cells of similar efficiency over 7% but of different colors.     

Oriented Growth of Al2O3:ZnO Nanolaminates for Use as Electron‐Selective Electrodes in Inverted Polymer Solar Cells

Atomic layer deposition is used to synthesize Al₂O₃:ZnO(1:x) nanolaminates with the number of deposition cycles, x, ranging from 5 to 30 for evaluation as optically transparent, electron‐selective electrodes in polymer‐based inverted solar cells. Al₂O₃:ZnO(1:20) nanolaminates are found to exhibit the highest values of electrical conductivity (1.2 × 10³ S cm^?1; more than six times higher than for neat ZnO films), while retaining a high optical transmittance (≥80% in the visible region) and a low work function (4.0 eV). Such attractive performance is attributed to the structure (ZnO crystal size and crystal alignment) and doping level of this intermediate Al₂O₃:ZnO film composition. Polymer‐based inverted solar cells using poly(3‐hexylthiophene) (P3HT):phenyl‐C₆₁‐butyric acid methyl ester (PCBM) mixtures in the active layer and Al₂O₃:ZnO(1:20) nanolaminates as transparent electron‐selective electrodes exhibit a power conversion efficiency of 3% under simulated AM 1.5 G, 100 mW cm^?2 illumination.     

Solution‐Processed Metallic Nanowire Electrodes as Indium Tin Oxide Replacement for Thin‐Film Solar Cells

Solution processed silver nanowire (Ag NW) films are introduced as transparent electrodes for thin‐film solar cells. Ag NW electrodes were processed by doctor blade‐coating on glass substrates at moderate temperatures (less than 100 °C). The morphological, optical, and electrical characteristics of these electrodes were investigated as a function of processing parameters. For solar‐cell application, Ag NW electrodes with an average transparency of 90% between 450 and 800 nm and a sheet resistivity of ≈10 Ω per square were chosen. The performance of poly(3‐hexylthiophen‐2,5‐diyl):[6,6]‐phenyl‐C61‐butyric acid methyl ester (P3HT:PCBM) solar cells on Ag NW electrodes was found to match the performance of otherwise identical cells on indium tin oxide. Overall, P3HT:PCBM solar cells with an efficiency of 2.5% on transparent Ag NW electrodes have been realized.     

Efficient and Durable 3D Self‐Supported Nitrogen‐Doped Carbon‐Coupled Nickel/Cobalt Phosphide Electrodes: Stoichiometric Ratio Regulated Phase‐ and Morphology‐Dependent Overall Water Splitting Performance

The construction of a novel 3D self‐supported integrated Ni_xCo_2?xP@NC (0 < x < 2) nanowall array (NA) on Ni foam (NF) electrode constituting highly dispersed Ni_xCo_2?xP nanoparticles, nanorods, nanocapsules, and nanodendrites embedded in N‐doped carbon (NC) NA grown on NF is reported. Benefiting from the collective effects of special morphological and structural design and electronic structure engineering, the Ni_xCo_2?xP@NC NA/NF electrodes exhibit superior electrocatalytic performance for water splitting with an excellent stability in a wide pH range. The optimal NiCoP@NC NA/NF electrode exhibits the best hydrogen evolution reaction (HER) activity in acidic solution so far, attaining a current density of 10 mA cm^?2 at an overpotential of 34 mV. Moreover, the electrode manifests remarkable performances toward both HER and oxygen evolution reaction in alkaline medium with only small overpotentials of 37 mV at 10 mA cm^?2 and 305 mV at 50 mA cm^?2, respectively. Most importantly, when coupling with the NiCoP@NC NA/NF electrode for overall water splitting, an alkali electrolyzer delivers a current density of 20 mA cm^?2 at a very low cell voltage of ≈1.56 V. In addition, the NiCoP@NC NA/NF electrode has outstanding long‐term durability at j = 10 mA cm^?2 with a negligible degradation in current density over 22 h in both acidic and alkaline media.     

Morphological Control for High Performance,Solution‐Processed Planar Heterojunction Perovskite Solar Cells

Organometal trihalide perovskite based solar cells have exhibited the highest efficiencies to‐date when incorporated into mesostructured composites. However, thin solid films of a perovskite absorber should be capable of operating at the highest efficiency in a simple planar heterojunction configuration. Here, it is shown that film morphology is a critical issue in planar heterojunction CH₃NH₃PbI_3‐xCl_x solar cells. The morphology is carefully controlled by varying processing conditions, and it is demonstrated that the highest photocurrents are attainable only with the highest perovskite surface coverages. With optimized solution based film formation, power conversion efficiencies of up to 11.4% are achieved, the first report of efficiencies above 10% in fully thin‐film solution processed perovskite solar cells with no mesoporous layer.     

Low‐Temperature‐Processed Printed Metal Oxide Transistors Based on Pure Aqueous Inks

Additive patterning of transparent conducting metal oxides at low temperatures is a critical step in realizing low‐cost transparent electronics for display technology and photovoltaics. In this work, inkjet‐printed metal oxide transistors based on pure aqueous chemistries are presented. These inks readily convert to functional thin films at lower processing temperatures (T ≤ 250 °C) relative to organic solvent‐based oxide inks, facilitating the fabrication of high‐performance transistors with both inkjet‐printed transparent electrodes of aluminum‐doped cadmium oxide (ACO) and semiconductor (InO_x ). The intrinsic fluid properties of these water‐based solutions enable the printing of fine features with coffee‐ring free line profiles and smoother line edges than those formed from organic solvent‐based inks. The influence of low‐temperature annealing on the optical, electrical, and crystallographic properties of the ACO electrodes is investigated, as well as the role of aluminum doping in improving these properties. Finally, the all‐aqueous‐printed thin film transistors (TFTs) with inkjet‐patterned semiconductor (InO_x ) and source/drain (ACO) layers are characterized, which show ideal low contact resistance (R _c < 160 Ω cm) and competitive transistor performance (µ _lin up to 19 cm² V^?1 s^?1, Subthreshold Slope (SS) ≤150 mV dec^?1) with only low‐temperature processing (T ≤ 250 °C).     

Realizing the Potential of ZnO with Alternative Non‐Metallic Co‐Dopants as Electrode Materials for Small Molecule Optoelectronic Devices

High performance indium tin oxide (ITO)‐free small molecule organic solar cells and organic light‐emitting diodes (OLEDs) are demonstrated using optimized ZnO electrodes with alternative non‐metallic co‐dopants. The co‐doping of hydrogen and fluorine reduces the metal content of ZnO thin films, resulting in a low absorption coefficient, a high transmittance, and a low refractive index as well as the high conductivity, which are needed for the application in organic solar cells and OLEDs. While the established metal‐doped ZnO films have good electrical and optical properties, their application in organic devices is not as efficient as other alternative electrode approaches. The optimized ZnO electrodes presented here are employed in organic solar cells as well as OLEDs and allow not only the replacement of ITO, but also significantly improve the efficiency compared to lab‐standard ITO. The enhanced performance is attributed to outstanding optical properties and spontaneously nanostructured surfaces of the ZnO films with non‐metallic co‐dopants and their straightforward integration with molecular doping technology, which avoids several common drawbacks of ZnO electrodes. The observations show that optimized ZnO films with non‐metallic co‐dopants are a promising and competitive electrode for low‐cost and high performance organic solar cells and OLEDs.     

All‐Solution‐Processed Cu2ZnSnS4 Solar Cells with Self‐Depleted Na2S Back Contact Modification Layer

The thin‐film photovoltaic material Cu₂ZnSnS₄ (CZTS) has drawn worldwide attention in recent years due to its earth‐abundant, nontoxic element constitution, and remarkable photovoltaic performance. Although state‐of‐the‐art power conversion efficiency is achieved by hydrazine‐based methods, effort to fabricate such devices in a high throughput, environmental‐friendly way is still highlydesired. Here a hydrazine‐free all‐solution‐processed CZTS solar cell with Na₂S self‐depleted back contact modification layer for the first time is demonstrated, using a ball‐milled CZTS as light absorber, low‐temperature solution‐processed ZnO electron‐transport layer as well as silver‐nanowire transparent electrode. The inserting of Na₂S self‐depleted layer is proven to effectively stabilize the CZTS/Mo interface by eliminating a detrimental phase segregation reaction between CZTS and Mo‐coated soda lime glass, thus leading to a better crystallinity of CZTS light absorbing layer, enhanced carrier transportation at CZTS/Mo interface as well as a smaller series resistance. Furthermore, the self‐depletion feature of the Na₂S modification layer also averts hole‐transportation barrier within the devices. The results show the vital importance of interfacial engineering for these CZST devices and the Na₂S interface layer can be extended to other optoelectronic devices using Mo contact.     

Alternating‐Current MXene Polymer Light‐Emitting Diodes

MXenes (Ti₃C₂) are 2D transition‐metal carbides and carbonitrides with high conductivity and optical transparency. However, transparent MXene electrodes suitable for polymer light‐emitting diodes (PLEDs) have rarely been demonstrated. With the discovery of the excellent electrical stability of MXene under an alternating current (AC), herein, PLEDs that employ MXene electrodes and exhibit high performance under AC operation (AC MXene PLEDs) are presented. The PLED exhibits a turn‐on voltage, current efficiency, and brightness of 2.1 V, 7 cd A^?1, and 12 547 cd m^?2, respectively, when operated under AC with a frequency of 1 kHz. The results indicate that the undesirable electric breakdown associated with heat arising from the poor interface of the MXene with a hole transport layer in the direct‐current mode is efficiently suppressed by the transient injection of carriers accompanied by the alternating change of the electric polarity under the AC, giving rise to reliable light emission with a high efficiency. The solution‐processable MXene electrode can be readily fabricated on a flexible polymer substrate, allowing for the development of a mechanically flexible AC MXene PLED with a higher performance than flexible PLEDs employing solution‐processed nanomaterial‐based electrodes such as carbon nanotubes, reduced graphene oxide, and Ag nanowires.     

Eclipse Pulsed Laser Deposition for Damage‐Free Preparation of Transparent ZnO Electrodes on Top of Organic Solar Cells

Pulsed laser deposited gallium doped zinc oxide (ZnO:Ga) is reported as transparent top electrode for organic solar cells. In contrast to standard coating techniques, prone to harm organic sublayers and leading to strongly reduced device efficiencies, eclipse pulsed laser deposition (PLD) in argon atmosphere is identified as compatible, nonharmful deposition method for ZnO:Ga, even on top of sensitive organic material. Although PLD is not yet ready for mass production, the experiments reveal and solve crucial process limitations, e.g., droplet impacts, which might be useful also for high yield deposition methods. Optimized ZnO:Ga top electrodes achieve a high mean transparency in the visible spectral range of T_vis = 82.7% and a reasonable sheet resistance of R_S = 83 Ω sq^?1. The organic photovoltaic devices prepared with this electrode obtained an efficiency of η = 2.9%, almost equal to the efficiency of reference samples using a state‐of‐the‐art metal top contact (η = 3.0%). The investigations here demonstrate the successful deposition of transparent conductive oxides as top electrode for organic devices and open a new path towards the combination of metal oxides and organic semiconductors.     

A stacked chalcopyrite thin‐film tandem solar cell with 1.2 V open‐circuit voltage

CuGaSe₂ (CGS) thin films were prepared on tin‐doped indium oxide (ITO) coated soda‐lime glass substrates by thermal co‐evaporation to fabricate transparent solar cells. The films consisted of columnar grains with a diameter of approximately 1 μm. Some deterioration of the transparency of the ITO was observed after deposition of the CGS film. The CGS solar cells were electrically connected in series with Cu(In,Ga)Se₂ (CIGS) solar cells and mechanically stacked on the CIGS cells to construct tandem cells. The tandem solar cell with the CGS cell as the top cell showed an efficiency of 7.4% and an open‐circuit voltage of 1.18 V (AM 1.5, total area). Copyright © 2003 John Wiley & Sons, Ltd.