Overcoming the poor short wavelength spectral response of CdS/CdTe photovoltaic modules via luminescence down‐shifting: ray‐tracing simulations

The short‐wavelength response of cadmium sulfide/cadmium telluride (CdS/CdTe) photovoltaic (PV) modules can be improved by the application of a luminescent down‐shifting (LDS) layer to the PV module. The LDS layer contains a mixture of fluorescent organic dyes that are able to absorb short‐wavelength light of λ < 540 nm, for which the PV module exhibited low external quantum efficiency (EQE), and re‐emit it at a longer wavelength (λ > 540 nm), where the solar cell EQE is high. Ray‐tracing simulations indicate that a mixed LDS layer containing three dyes could lead to an increase in the short‐circuit current density from J_sc = 19.8 mA/cm² to J_sc = 22.9 mA/cm² for a CdS/CdTe PV module. This corresponds to an increase in conversion efficiency from 9.6% to 11.2%. This indicates that a relative increase in the performance of a production CdS/CdTe PV module of nearly 17% can be expected via the application of LDS layers, possibly without any making any alterations to the solar cell itself. Copyright © 2006 John Wiley & Sons, Ltd.     

Voltage dependent photocurrent collection in CdTe/CdS solar cells

The voltage dependence of the photocurrent J_L(V) of CdTe/CdS solar cells has been characterized by separating the forward current from the photocurrent at several illumination intensities. J_L(V) reduces the fill factor (FF) of typical cells by 10–15 points, the open circuit voltage (V_OC) by 20–50 mV, and the efficiency by 2–4 points. Eliminating the effect of J_L(V) establishes superposition between light and dark J(V) curves for some cells. Two models for voltage dependent collection give reasonable fits to the data: (1) a single carrier Hecht model developed for drift collection in p‐i‐n solar cells in which fitting yields a parameter consistent with lifetimes of 10⁻⁹ s as measured by others; or (2) the standard depletion region and bulk diffusion length model fits almost as well. The simple Hecht‐like drift collection model for photocurrent gives very good agreement to J(V) curves measured under AM1·5 light on CdTe/CdS solar cells with FF from 53% to 70%, CdTe thickness from 1·8 to 7·0 µm, in initial and stressed states. Accelerated thermal and bias stressing increases J_L(V) losses as does insufficient Cu. This method provides a new metric for tracking device performance, characterizes transport in the high field depletion region, and quantifies a significant FF loss in CdTe solar cells. Copyright © 2007 John Wiley & Sons, Ltd.     

Current–voltage curve translation by bilinear interpolation

By means of bilinear interpolation and four reference current–voltage (I–V) curves, an I–V curve of a photovoltaic (PV) module is translated to desired conditions of irradiance and PV module temperature. The four reference I–V curves are measured at two irradiance and two PV module temperature levels and contain all the essential PV module characteristic information for performing the bilinear interpolation. The interpolation is performed first with respect to open‐circuit voltage to account for PV module temperature, and second with respect to short‐circuit current to account for irradiance. The translation results over a wide range of irradiances and PV module temperatures agree closely with measured values for a group of PV modules representing seven different technologies. Root‐mean‐square errors were 1·5% or less for the I–V curve parameters of maximum power, voltage at maximum power, current at maximum power, short‐circuit current, and open‐circuit voltage. The translation is applicable for determining the performance of a PV module for a specified test condition, or for PV system performance modeling. Copyright © 2004 John Wiley & Sons, Ltd.     

CdS/CdTe thin‐film solar cells with Cu‐free transition metal oxide/Au back contacts

Superstrate CdS/CdTe thin‐film solar cells with Cu‐free transition metal oxide (TMO)/Au and Au‐only back contacts have been fabricated. The TMOs include MoO_3‐x, V₂O_5‐x, and WO_3‐x. The incorporation of the TMO buffer layers at the back contacts resulted in significant improvement on open‐circuit voltage (V_OC) as compared with the cells with Cu‐free Au‐only back contacts. Among the cells using TMO buffer layers, the ones with MoO_3‐x buffer layers exhibited the best performance, yielding an efficiency of 14.1% under AM1.5 illumination with V_OC of 815 mV and a fill factor of 67.9%. Though the performance is slightly behind the best reference cell with a Cu/Au back contact fabricated in our lab with V_OC of 844 mV, fill factor of 76.3%, and efficiency of 15.7%, the use of Cu‐free back contacts may lead to improved long‐term cell stability. Copyright © 2013 John Wiley & Sons, Ltd.     

A new method to characterize bifacial solar cells

We present a new method to characterize bifacial solar cells under standard test conditions (STC). The method considers the bifacial operation of the cell and provides the characteristics for simultaneous front and rear side illumination rather than providing the front and the rear side characteristics separately. The method involves measurements of front side electrical parameters (efficiency, open‐circuit voltage, short‐circuit current and fill factor) and rear side short‐circuit current under STC. Two new parameters are introduced, namely bifacial 1.x efficiency (effective efficiency) and gain‐efficiency product, which are calculated from the measured STC parameters. The former provides information related to the cell design considering the bifacial operation, whereas the latter provides the end‐use benefits from the modules with bifacial cells for a particular installation. To calculate the bifacial 1.x efficiency and the gain‐efficiency product, a one‐diode solar cell equivalent circuit is used. Characteristic plots are shown for the newly introduced parameters as a function of rear‐side illumination for various example solar cells. A sensitivity analysis is performed to understand the influence of each single‐sided STC solar cell parameter on the newly introduced parameters. This sensitivity analysis shows that the fill factor and the rear‐to‐front current ratio are the most critical parameters for bifacial solar cells. Copyright © 2012 John Wiley & Sons, Ltd.     

Factors Affecting the Stability of CdTe/CdS Solar Cells Deduced from Stress Tests at Elevated Temperature

CdTe/CdS solar cells were subjected to heat stress at 200 °C in the dark under different environments (in N₂ and in air), and under illumination (in N₂). We postulate that two independent mechanisms can explain degradation phenomena in these cells: i) Excessive Cu doping of CdS: Accumulation of Cu in the CdS with stress, in the presence of Cl, will increase the photoconductivity of CdS. With limited amounts of Cu in CdS, this does NOT affect the photovoltaic behavior, but explains the crossover of light/dark current–voltage (J–V) curves. Overdoping of CdS with Cu can be detrimental to cell performance by creating deep acceptor states, acting as recombination centers, and compensating donor states. Under illumination, the barrier to Cu cations at the cell junction is reduced, and, therefore, Cu accumulation in the CdS is enhanced. Recovery of light‐stress induced degradation in CdTe/CdS cells in the dark is explained by dissociation of the acceptor defects. ii) Back contact barrier: Oxidation of the CdTe back surface in O₂/H₂O‐containing environment to form an insulating oxide results in a back‐contact barrier. This barrier is expressed by a rollover in the J–V curve. Humidity is an important factor in air‐induced degradation, as it accelerates the oxide formation. Heat treatment in the dark in inert atmosphere can stabilize the cells against certain causes of degradation, by completing the back contact anneal.     

低光强下CdTe太阳电池的性能研究

研究了低光强下CdTe太阳电池的性能变化.基于经典的CdS/CdTe结构,建立了短路电流、开路电压、填充因子和转换效率等参数与光强之间的关系模型,模拟了0.02～1kW/m2光强范围内的主要参数变化规律.结果表明,随着光强的减小,CdTe电池短路电流呈线性减小,开路电压呈指数下降,填充因子先增大,在0.3 kW/m2附近达到最大值,之后迅速降低;转换效率逐渐恶化.研究结果为CdTe薄膜太阳电池在室外低光强下和室内应用提供了理论基础.     

Optimization of CdTe thin‐film solar cell efficiency using a sputtered,oxygenated CdS window layer

A major source of loss in cadmium sulfide/cadmium telluride (CdS/CdTe) solar cells results from light absorbed in the CdS window layer, which is not converted to electrical current. This film can be made more transparent by oxygen incorporation during sputter deposition at ambient temperature. Prior to this work, this material has not produced high‐efficiency devices on tin oxide‐coated soda‐lime‐glass substrates used industrially. Numerous devices were fabricated over a variety of process conditions to produce an optimized device. Although the material does not show a consistent increase in band gap with oxygenation, absorption in this layer can be virtually eliminated over the relevant spectrum, leading to an increase in short‐circuit current. Meanwhile, fill factor is maintained, and open‐circuit voltage increases relative to baseline devices with sublimated CdS. The trend of device parameters with oxygenation and thickness is consistent with an increasing conduction band offset at the window/CdTe interface. Optimization considering both initial efficiency and stability resulted in a National Renewable Energy Laboratory verified 15.2%‐efficient cell on 3.2‐mm soda‐lime glass. This window material was shown to be compatible with SnO₂‐based transparent conducting oxide and high resistance transparent coated substrates using in‐line compatible processes. Copyright © 2015 John Wiley & Sons, Ltd     

Synthesis and characterization of novel oxygenated CdSe window layer for CdTe thin film solar cells

Significant increases in the solar conversion performance of thin film CdS/CdTe solar cells have been realized in recent years by the inclusion of wider gap materials, notably CdS:O, in place of the CdS window layer. Similarly, use of CdSe in combination with CdTe has given yet further increases in current density due to the formation of CdTe_1-xSe_x and the resulting enhanced long wavelength collection. Here we report the synthesis and properties of oxygenated CdSe films and their influence on device performance when included into CdTe solar cells. The CdSe:O films were made by pulsed laser deposition in oxygen at pressures of 0.01 and 0.03 Pa. Optical transmission measurements indicated that oxygenation acts to increase transparency in the 400–750 nm range, and that increased oxygen content acts to increase the apparent absorption threshold slightly. The higher transmission acts to increase the spectral response of CdTe solar cells in the range 350–500 nm compared to CdSe- and CdS-containing control devices. Moreover, the already known advantage of enhanced long wavelength response (850–910 nm) over that of CdS/CdTe is retained for both CdSe and CdSe:O window layers. Hence the use of CdSe:O as a window layer is demonstrated to increase the current harvesting of these solar cells by increasing both their long and short wavelength performances. These gains in the short circuit current outweigh small losses in fill factor and open circuit voltage making CdSe:O a valuable possible means to increase the performance of CdTe solar cells.     

Long‐term transient and metastable effects in cadmium telluride photovoltaic modules

Thin‐film cadmium telluride (CdTe) photovoltaic (PV) technology is poised to begin making significant contributions and impact on terrestrial, electric power generation. However, some outstanding issues such as stability and transient behavior, and their impact on reliability and assessment of performance, remain to be thoroughly addressed, which has prompted some unease among PV industry integrators toward deploying this technology. We explore the issues of long‐term stability and transient behavior in the performance of CdTe modules herein, using data acquired from indoor light‐soaking studies. We find that measurement of current‐voltage parameters and their temperature coefficients are entangled with transient effects. Changes in module power depend on recent operating history, such as electrical bias, and can result in either artificially high or low performance. Both the open‐circuit voltage (V_OC) and fill factor (FF) are significantly impacted by metastable behavior that appears to linger for up to tens of hours, and we observe such increased transient effects after modules have undergone several hundred hours of light exposure. We present and analyze data measured under standard reporting conditions and actual operating conditions for six CdTe modules light‐exposed and stressed at 65°C nominal temperatures. Copyright © 2006 John Wiley & Sons, Ltd.     

The effect of oxygen on interface microstructure evolution in CdS/CdTe solar cells

Microstructural changes at the CdS/CdTe solar cell interface where close‐spaced sublimation (CSS) is used as the growth technique to deposit the p‐type CdTe absorber layer are studied by systematic layer characterization at various stages during heterojunction growth. CdS layers grown by both chemical bath deposition (CBD) and CSS provide a basis for determining the effects of CdS crystallinity, grain size, and oxygen content on the subsequent CdTe layer. As‐grown CBD CdS films exhibit small grains and variations in optical properties attributed to film impurities. In contrast, CSS yields CdS films with good crystallinity, larger grains, and nearly ideal optical properties. The hexagonal nature of CSS‐grown CdS is seen to nucleate hexagonal CdTe during the initial stages of CdTe film growth. Cubic CdS deposited by CBD in contrast promotes cubic CdTe nucleation. Oxygen anneals in the latter case can aid hexagonal CdTe nucleation. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) of the CdS/CdTe interface show CdS‐dependent differences in interdiffusion at the interface. This interdiffusion appears to be determined by the oxygen level in the CdS. When low‐oxygen‐containing CSS CdS films are used, sulfur diffusion is substantial, leading to significant consumption of the CdS layer. When these same films are annealed in oxygen, the consumption is reduced. Te diffusion into the CdS layer is also observed to decrease with oxygen anneals. Optical modeling shows that Te alloying with the CdS layer can greatly reduce the short‐circuit current of CdS/CdTe devices. Copyright © 2002 John Wiley & Sons, Ltd.     

Stability of sub‐micron‐thick CdTe solar cells

Sputtered CdS/CdTe cells with only 0.75 µm of CdTe have reached AM1.5 efficiencies over 12.5%. But the use of very thin absorber layers of CdTe raises questions about the possible impact on long‐term stability when the back contact is very close to the main junction. In this study, we have performed accelerated life testing (ALT) on unencapsulated CdTe dot cells with absorber thickness ranging from 0.7 to 2.1 µm. After 900 h of ALT at 85°C under continuous one‐sun illumination, with open circuit biasing and no encapsulation, we find that any decrease in stability as CdTe thickness decreases is within the ~10% statistical uncertainty shown by the sample sets of more than 20 cells each. Cells of all thicknesses exhibited some decrease in performance under these stress conditions, and open‐circuit voltage appears to be the key factor in decreased efficiency. These changes in performance under ALT at 85°C are found to be consistent with a projected field lifetime of about 40 years in typical conditions. Secondary ion mass spectroscopy depth profiles of several elements including Cu showed no evidence of ALT‐driven diffusion in these sputtered CdTe cells. Copyright © 2013 John Wiley & Sons, Ltd.     

Stable CdTe thin film solar cells with a MoOx back‐contact buffer layer

MoO_x thin films were employed as a buffer layer in the back contact of CdTe solar cells. A monograined CdS layer was employed as the window layer to reduce light absorption. The insertion of a MoO_x buffer layer in the back contact greatly reduced the Schottky barrier leading to increased fill factor and open‐circuit voltage. A CdTe solar cell, with an efficiency as high as 14.2%, was fabricated. The use of a MoO_x buffer layer made it possible to fabricate high‐efficient CdTe solar cell with much less Cu in the back contact, thus greatly enhancing the cell stability. Copyright © 2015 John Wiley & Sons, Ltd.     

Macroscopic Nanotemplating of Semiconductor Films with Hydrogen‐Bonded Lyotropic Liquid Crystals

Aqueous gel‐like lyotropic liquid crystals with extensive hydrogen bonding and nanoscale hydrophilic compartments have been used to define the growth of macroscopic nanotemplated CdS and CdTe thin films. These mesoporous semiconductor films contain a hexagonal array of 2.5 nm pores, 7 nm center‐to‐center, that extend in an aligned fashion perpendicular to the substrate. The CdS is deposited on a polypropylene substrate by a reaction between Cd(NO₃)₂ dissolved in the liquid crystal and H₂S transported via diffusion through the substrate. The CdTe is electrodeposited on indium‐tin‐oxide‐coated glass from TeO₂ and Cd(NO₃)₂, both of which are dissolved in the liquid‐crystal template. The porous nature of the CdTe films enables chemical transformations of the entire bulk of the film. As electrodeposited, the CdTe films are Te rich and, in contrast to a non‐templated film, the excess Te could be removed via a chemical treatment, proving the continuity of the pores in the nanotemplated films. These results suggest that liquid‐crystal lithography with hydrogen‐bonding amphiphiles may be a useful approach to create materials with nanoscale features over macroscopic dimensions.     

Optimization of vapor post‐deposition processing for evaporated CdS/CdTe solar cells

The effects of thermal annealing in conjunction with CdCl₂ vapor heat treatment on the properties of CdTe/CdS thin films and devices deposited by physical vapor deposition are reported. Results are compared for three treatment variations: high‐temperature anneal only, high‐temperature anneal followed by CdCl₂ vapor heat treatment and CdCl₂ vapor heat treatment only. X‐ray diffraction, transmission electron microscopy and scanning electron microscopy show improved crystallographic properties of the CdTe film and reduced CdS/CdTe interdiffusion when a high‐temperature anneal is used prior to CdCl₂ treatment. The CdTe/CdS solar cells fabricated using an anneal at 550°C in argon prior to the CdCl₂ vapor heat treatment exhibited improved electrical characteristics compared to cells fabricated with no anneal step, yielding an open‐circuit voltage exceeding 850 mV. Copyright © 1999 John Wiley & Sons, Ltd.     

CdTe/CdS thin film solar cells grown in substrate configuration

The ability to grow efficient CdTe/CdS solar cells in substrate configuration would not only allow for the use of non‐transparent and flexible substrates but also enable a better control of junction formation. Yet, the problems of barrier formation at the back contact as well as the formation of a p–n junction with reduced recombination losses have to be solved. In this work, CdTe/CdS solar cells in substrate configuration were developed, and the results on different combinations of back contact materials are presented. The Cu content in the electrical back contact was found to be a crucial parameter for the optimal CdCl₂‐treatment procedure. For Cu‐free cells, two activation treatments were applied, whereas Cu‐containing cells were only treated once after the CdTe deposition. A recrystallization behavior of the CdTe layer upon its activation similar to superstrate configuration was found; however, no CdTe–CdS intermixing could be observed when the layers were treated consecutively. Remarkably high V_OC and fill factor of 768 mV and 68.6%, respectively, were achieved using a combination of MoO₃, Te, and Cu as back contact buffer layer resulting in 11.3% conversion efficiency. With a Cu‐free MoO₃/Te buffer material, a V_OC of 733 mV, a fill factor of 62.3%, and an efficiency of 10.0% were obtained. Copyright © 2012 John Wiley & Sons, Ltd.     

Open-circuit voltage,fill factor,and efficiency of a CdS/CdTe solar cell

The dependences of the open-circuit voltage, fill factor, and efficiency of the thin-film CdS/CdTe solar cell on the resistivity ρ and carrier lifetime τ in the absorbing CdTe layer were studied. In the common case in which the uncompensated acceptor concentration and the electron lifetime in the CdTe layer are within 10¹⁵–10¹⁶ cm⁻³ and 10⁻¹⁰–10⁻⁹ s, the calculation results correspond to the achieved efficiency of the best thin-film CdS/CdTe solar cells. It was shown that, by decreasing ρ and increasing τ in the absorbing CdTe layer, the open-circuit voltage, fill factor, and efficiency can be substantially increased, with their values approaching the theoretical limit for such devices.     

A 21.5% efficient Cu(In,Ga)Se2 thin‐film concentrator solar cell

Cu(In,Ga)Se₂ (CIGS) solar cells have been designed for operation under mildly concentrated sunlight. The absorber was deposited via a three‐stage evaporation process that has consistently yielded high‐performance one‐sun devices. The device structure reported here was modified by reducing the thickness of the CdS window/buffer layer to enhance the short‐circuit current at the expense of the open‐circuit voltage. Operation of the devices under optical enhancement leads to significant increases in the voltage and fill factor. At 14 suns, the open‐circuit voltage for this device was 736 mV, the fill factor was 80.5%, and the efficiency was 21.5%. This result represents the first report of a polycrystalline thin‐film solar cell with an efficiency in excess of 20%. Published in 2002 by John Wiley & Sons, Ltd.     

Application of copper thiocyanate for high open‐circuit voltages of CdTe solar cells

Copper thiocyanate (CuSCN) has proven to be a low‐cost, efficient hole‐transporting material for the emerging organic–inorganic perovskite solar cells. Herein, we report that CuSCN can also be applied to CdTe thin‐film solar cells to achieve high open‐circuit voltages (V_OCs). By optimizing the thickness of the thermally evaporated CuSCN films, CdTe cells fabricated by close space sublimation in the superstrate configuration have achieved V_OCs as high as 872 mV, which is about 20–25 mV higher than the highest V_OC for the reference cells using the standard Cu/Au back contacts. CuSCN is a wide bandgap p‐type conductor with a conduction band higher than that of CdTe, leading to a conduction band offset that reflects electrons in CdTe, partially explaining the improved V_OCs. However, due to the low conductivity of CuSCN, CdTe cells using CuSCN/Au back contacts exhibited slightly lower fill factors than the cells using Cu/Au back contacts. With optimized CdS:O window layers, the power conversion efficiency of the best CdTe cell, using CuSCN/Au back contact, is 14.7%: slightly lower than that of the best cell (15.2%) using Cu/Au back contact. Copyright © 2015 John Wiley & Sons, Ltd.     

Ultrathin CdTe Solar Cells with MoO3−x /Au Back Contacts

We report on the fabrication and characterization of CdTe thin-film solar cells with Cu-free MoO_3?x /Au back contacts. CdTe solar cells with sputtered CdTe absorbers of thicknesses from 0.5 to 1.75 μm were fabricated on Pilkington SnO₂:F/SnO₂-coated soda–lime glasses coated with a 60- to 80-nm sputtered CdS layer. The MoO_3?x /Au back contact layers were deposited by thermal evaporation. The incorporation of MoO_3?x layer was found to improve the open circuit voltage (V _OC) but reduce the fill factor of the ultrathin CdTe cells. The V _OC was found to increase as the CdTe thickness increased.