共查询到18条相似文献,搜索用时 109 毫秒
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利用NiOx薄膜具有优良的电致变色性能,制备了透过率可实时调整的PDP屏滤光膜以提高PDP屏的出光效率,在不同环境照度下获得更好的图像质量。采用扫描电镜(SEM)、X射线衍射仪(XRD)、分光光度计研究了采用磁控溅射法制备的NiOx薄膜中镍的含量对薄膜光电特性的影响。分析测试结果表明:溅射时随着氧分压的提高,氧化镍薄膜的镍含量明显降低;NiOx薄膜中镍原子含量为45%左右时,NiOx薄膜对可见光透过率的调节能力最强,其最高透过率与最低透过率差值达70%。 相似文献
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为了适应未来红外焦平面探测器系统小型化、集成化和高精度的发展要求,采用了热蒸发方法分别在InP衬底和InGaAs探测器上实现了中心波长为1.38μm滤光膜的片上集成。利用偏光显微镜、原子力显微镜(AFM)和扫描电子显微镜(SEM)以及红外傅里叶光谱(FTIR)等实验手段研究了滤光膜的表面界面形貌和光学性能,结果显示,滤光膜为法布里-珀罗三谐振腔结构,与膜系设计一致;滤光膜中心波长为1.38μm,透射率在60%左右。对集成滤光膜InGaAs器件的电学和光学性能测试分析表明,滤光膜制备工艺对器件的电流电压特性和噪声基本没有影响;而集成滤光膜器件的响应要优于滤光膜分离器件的性能。 相似文献
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激光通信作为一种通信手段,以其抗干扰能力强、保密性好、功率集中等优点,在军事和民用等领域得到广泛应用。为满足激光通信系统使用要求,提高信噪比,对系统中的滤光膜进行研制。选用Ti3O5和Si O2作为镀膜材料,依据倍频设计和双波长增透原理完成了三带通、宽反射带滤光膜的设计。通过膜厚缩放比例和逆向工程方法分析膜厚累积误差,重点解决了膜厚监控误差大的问题。制备的滤光膜在532 nm和1064 nm处透射率大于90%,808 nm处透射率大于85%,(1550±20)nm处透射率小于0.4%,满足该系统环境测试要求。 相似文献
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为了提高红外探测器的灵敏度,针对红外探测器元件滤光膜的技术要求,采用Si和YbF3的膜料组合,依据薄膜理论,设计干涉截止滤光膜,满足了3个波段对光学性能的要求,并且在实际制备过程中优化了工艺参数,包括温度、蒸发速率以及离子源辅助沉积参数。通过多次实验研究,对设备的本身误差进行分析修正,提高了膜层厚度控制精度,在蓝宝石基底上成功镀制了1 064 nm透射率为91.5%、1 200~2 900 nm平均反射率大于97%、3 000~5 000 nm平均透射率为93%的3波段干涉截止滤光膜,给出了综合测试结果和实测光谱曲线。 相似文献
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以光学薄膜理论为出发点,系统介绍了3.7~4.8 m带通滤光膜的理论设计与优化、实际生产制备以及成品测试方法。考虑到膜料性能及膜层匹配等问题,分别选用锗和一氧化硅作为高低折射率材料,并以氧化铝作为薄膜基底。确定了滤光膜的基础膜系,并使用Filmaster软件对膜系进行了设计和优化计算。在薄膜蒸镀过程中,根据材料选取合适的镀制工艺。通过温度控制、离子辅助等方法研制出了可靠性与光谱特性皆优的带通滤光膜,并对其光谱特性及膜层质量等进行了测试。根据设计目标修改工艺参数,最终确定可行的工艺流程,从而研制出了符合光学性能设计指标的3.7~4.8 m带通滤光膜。 相似文献
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三、PDP等离子体显示器关键概念:PDP,发光效率,ALIS,华夫饼干结构,疑似轮廓基本结构:PDP的中文名称为等离子体显示板,它是利用气体加热到等离子状态会放电发光的原理来显示图像的一种设备。PDP最适合大画面利用,也是画面尺寸最早超过CRT的直视式电视。PDP像素点的发光原理与家用荧光灯基本相同。在备有电极的两块玻璃板间封入氖(Ne)和氙(Xe)气体。玻璃基板的内侧布涂有R、G、B三原色荧光粉。 相似文献
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彩色等离子体显示板的彩色重现 总被引:1,自引:0,他引:1
叙述了影响彩色PDP彩色重现的因素,其中主要因素是荧光粉的色度值和排列情况,其次是单元的结构、滤色膜、黑色矩阵、驱动电路和障壁等。 相似文献
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Chen-Chang Liu Chern-Lin Chen Kun-Ming Lee 《Industrial Electronics, IEEE Transactions on》2000,47(6):1271-1277
A novel energy-recovery driver is proposed to drive a plasma display panel (PDP) in the sustaining operation. The proposed circuit uses the parallel resonance between the inductor and the intrinsic capacitance of PDP to mainly recover the energy lost by the capacitive displacement current of the PDP. The parasitic resonance caused by the parasitic inductance and the stray capacitance is prevented greatly. A 34-in AC PDP equipped with the proposed driving circuit, operated at 100 kHz, is investigated. In addition, some prior work is shown in this paper for comparison, in which the power consumption of driving the same 34-in panel is measured. The experimental results show that the proposed driver has a low-cost structure and better performance than the prior ones. 相似文献
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Sang-Kyoo Han Jun-Young Lee Gun-Woo Moon Myung-Joong Youn Chang-Bae Park Nam-Sung Jung Jung-Pil Park 《Electronics letters》2002,38(15):790-792
A new energy-recovery circuit for a plasma display panel (PDP) is proposed. It features a simpler structure, less mass, higher efficiency, and fewer devices. The very stable and uniform light emitted from a PDP proves the high quality of the screen. It is suitable for hang-on-the-wall TVs which have desirable features such as thinness, lightness, high efficiency, and low price 相似文献
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利用等离子体显示板自发光、薄型、亮度高、发光均匀的特点,开发出基于等离子体显示机理的薄型等离子体面光源,用于需要薄型照明的特定场合.为克服等离子体显示板发光效率过低的不足,对面光源显示板的结构、材料,工艺和驱动电路诸方面进行多项改进,经改进后的等离子体面光源最小厚度不大于4 mm,亮度350 cd/m2,色温为 6500 K,发光效率4Lm/W.光源型 PDP 显示板的研究结果对进一步提高图象型 PDP 显示板的光电性能提供了有益的启示. 相似文献
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This paper presents a highly efficient ternary flash ADC, designed using the innovative gate-overlap tunnel FET (GOTFET) at the 45 nm technology node. The proposed GOTFETs have on-state currents Ion more than double, while the off-state currents Ioff remaining at least an order of magnitude lower than the corresponding values of the standard 45 nm CMOS technology with the same width. Replacing MOSFETs with the proposed GOTFETs significantly reduces the static power consumption and improves performance. However, the higher Ion increases the dynamic power as well. To minimize the dynamic power, we propose a novel complementary GOTFET (CGOT) based comparator design. In addition to the inherent advantages of the GOTFET technology, the proposed design further reduces the dynamic power, such that the final power delay product (PDP) is merely 6.3% of the PDP in conventional CMOS comparator design. In addition to the novelty related to the innovative GOTFET devices, there are at least two-fold circuit-level novelty reported in this work. Firstly, we propose a novel CGOT based comparator circuit design, which, in addition to the advantages of GOTFET, further reduces the dynamic power such that the PDP is less than 1/3rd of the original PDP of the conventional comparator designed with GOTFETs. Secondly, the proposed CGOT based ADC requires only 48 transistors to encode the comparator outputs into the 2-bit ternary output, which is 30% lower than the 70 transistors necessary for the 2-bit CMOS based ternary flash ADC designs reported earlier in the literature. We propose an efficient 2-bit ternary flash ADC with a resolution of 50 mV and input quantized to 9 levels. Subsequently, we benchmark the performance of the proposed CGOT ternary flash ADC with the same ADC circuit implemented using the standard 45 nm CMOS technology library, all corresponding devices having the same width. We demonstrate that in addition to the superior performance than the corresponding CMOS ADC, the proposed CGOT ADC design consumes significantly lower power. The overall PDP of the proposed CGOT ADC is merely 6.3% of the PDP in corresponding CMOS design. 相似文献
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