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设计了一种快速升压的片上电荷泵电路,该电路由时钟产生电路和电荷泵核组成。电荷泵核基于传统Dickson电荷结构,在前四级引入预充管,增加节点初始电压,提高电荷泵升压速度,时钟产生电路能产生占空比约为30%的稳定时钟信号,用它驱动电荷泵核可以减小充放电流失配等问题,进一步提高电荷泵升压速度。基于华虹NEC 0.35μs CMOS工艺,HSPICE仿真结果显示:在5V电源电压下,电荷泵仅需要57.625μs就可以从0V升压到20V,比传统的MOS管Dickson电荷泵快了20.055μs。 相似文献
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针对传统四相时钟发生电路产生的时钟波形信号易发生交叠、驱动电荷泵易发生漏电等问题,提出了一种占空比可调四相时钟发生电路。电路在每两相可能出现交叠的时钟信号之间都增加了延时单元模块,通过控制延时时间对输出时钟信号的占空比进行调节,避免了时钟相位的交叠。对延时单元进行了改进,在外接偏置电压条件下,实现了延时可控。基于55 nm CMOS工艺的仿真结果表明,在10~50 MHz时钟输入频率范围内,该四相时钟发生电路可以稳定输出四相不交叠时钟信号,并能在1.2 V电压下驱动十级电荷泵高效泵入11.2 V。流片测试结果表明,该四相时钟发生电路能够产生不相交叠的四相时钟波形,时钟输出相位满足电荷泵驱动需求。 相似文献
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从方法优化和电路设计入手,提出了基于片上系统(SOC)的复位方法和时钟复位电路.设计了片外按键复位电路、片内上电电路、晶振控制电路、片内RC低频时钟电路、槽脉冲产生电路、分频延时电路、时钟切换电路及异步复位同步释放电路等电路模块.以上电路模块构成了片上系统的时钟复位电路,形成了特定的电路时钟复位系统.该时钟复位系统将片外按键复位与片内上电复位结合起来,形成多重复位设计,相比单纯按键复位更智能,相比单纯上电复位则更可靠.另外,该时钟复位系统还采用了片内RC振荡时钟电路等一系列电路,借助片内RC时钟实现对芯片的延时复位,进而在保证复位期间寄存器得到正确初始化的同时,还使得芯片能够始终处在稳定的晶振时钟下正常工作.相比传统的时钟复位电路,该时钟复位系统既便捷,又保证了系统初始化和系统工作的可靠性. 相似文献
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介绍了一种提高单片机运行可靠性的片内掉电保护电路,该电路可以检测电源电压的降低状况,并按规定的要求在电源电压降至下限阈值时启动内部复位产生器,从而复位CPU并保证使其处于复位状态直至电源电压恢复正常。该CMOS掉电保护电路由取样电阻、1.2V参考电压源和CMOS电压比较器组成,并结合片内复位逻辑完成掉电保护功能。 相似文献
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用于巨磁阻生物传感器检测的模拟前端电路 总被引:1,自引:0,他引:1
提出一种用于巨磁阻(GMR)生物传感器检测的模拟前端电路。电路采用电压检测的方法,包括基准电压源,单位增益缓冲器,电荷转移型开关电容采样保持电路,流水线模数转换器四部分;基准电压源用于产生传感器阵列的片内激励电压;传感器阵列的检测输出电压经单位增益缓冲器后,由开关电容采样保持电路进行采样,保持,放大;最后经过流水线模数转换器输出数字码流;芯片采用SMIC 0.18μm 1P6M CMOS厚栅氧工艺实现。测试结果表明,在电源电压3.3 V,20 MHz时钟下测试,整体电路输出信号有效精度达到7.2 bit,功耗33 mW,满足GMR生物传感器的检测要求。 相似文献
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High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center. 相似文献
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In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy. 相似文献
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This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors. 相似文献
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YUXiao-hua XIANGYu-qun 《半导体技术》2005,30(2):30-32,37
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB. 相似文献
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The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO>6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs. 相似文献
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Meihua Shen Wilfred Pau Nicolas Gani Jianping Wen Shashank Deshmukh Thorsten Lill Jian Zhang Hanming Wu Guqing Xing 《半导体技术》2004,29(8)
This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration. 相似文献
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White organic light-emitting devices based on fac tris(2- phenylpyridine) iridium sensitized 5,6,11,12-tetraphenylnap -hthacene 总被引:1,自引:0,他引:1
We have fabricated the white organic light-emitting devices (WOLEDs) based on 4,4' -bis(2,2 -diphenyl vinyl)-1,1' - biphenyl (DPVBi) and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene (rubrene). The device structure is ITO/2T-NATA (20 nm)/NPBX (20 nm)/CBP: x%Ir(ppy)3:0.5% rubrene (8 nm)/NPBX (5 nm)/DPVBi (30 nm)/Alq(30 nm)/LiF(0.5 nm)/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris (2-phenylpyridine) iridium [Ir(ppy)3], acts as a yellow light-emitting layer, and N,N' -bis- (1-naphthyl)- N,N' -diphenyl -1, 1' -biphenyl-4,4' -diamine (NPBX) acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir (PPY)3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V. 相似文献
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Complete approach to automatic identification and sub-pixel center location for ellipse feature 总被引:1,自引:0,他引:1
XUE Ting WU Bin SUN Mei YE Sheng-hua 《光电子快报》2008,4(1):51-54
To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction. 相似文献
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TANG Bin JIANG Xing-fang LIU Zhi-min 《光电子快报》2008,4(1):78-80
By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly. 相似文献