高校教学办公耗材管理系统的数据库设计

基于Windows的关系型数据库管理系统,以PHP+MySQL来实现系统的构建,完成了针对高校办公耗材管理系统的数据库设计。通过对系统进行分析,文章重点介绍开发过程中数据库设计的理论依据,并以高校办公耗材管理系统的设计为例对具体环节进行分析与研究。     

基于WEB的二级学院办公管理系统设计与开发

随着计算机网络技术的不断发展,WEB办公管理系统在各大高校中得到了广泛的运用,并且取得了非常显著的效果。传统办公管理方式的弊端也逐渐凸显出来,诸如时效性差、错误较多、查询费时费力等等。因此,如何在目前的WEB办公管理系统下设计和开发一种更加有效的二级学院办公管理系统,是时代的要求。本文主要针对于WEB下二级学院办公管理系统软件与开发进行相关的研究,其内容包括WEB下二级学院办公管理系统设计与开发上关键技术的实现、安全性控制、总体设计的思路以及具体的模块设计,主要的目的在于为二级学院构建办公管理系统设计与开发提供一个参考的依据。     

基于WEB结构的人事管理系统的设计与实现

随着万维网的不断发展,网络技术逐渐在高校里普及使用,为了规范高校人事管理,提高办公效率,加快现代大学的信息化建设,都迫切建立一套人事管理系统,来取代手工统计人事档案的方式。当今WEB技术飞速发展的格局下,建立一套基于WEB的人事管理系统成为首选。本文介绍了基于WEB结构的人事管理系统的设计与实现的方法,能满足高校人事管理需求的应用系统。     

湖北广电总台的固定资产管理

本文介绍了利用办公网络以SQL Server为核心构建的电视台固定资产管理系统， 概述了该系统的特点、系统结构和主要功能。本文介绍了利用办公网络以SQL Server为核心构建的电视台固定资产管理系统， 概述了该系统的特点、系统结构和主要功能。     

实验室设备管理系统开发中的问题解决思路

针对当前高校实验室设备管理的现状,基于现实的需求,采用了JSP技术与SQLServer数据库开发研制实验室设备管理系统,并结合开发中遇到的问题提出了有效的解决方法。经过使用验证,与传统管理手段比较,新系统更加方便,快捷,有效,节省成本,符合网络化办公以及无纸化办公的发展趋势。     

计算机实验室管理系统设计应用研究

随着互联网及计算机技术的快速发展，给人们的生活带来了巨大的便利，也给教育的现代化带来了新的契机，计算机实验室随之诞生并快速发展，实验室教学也逐步上升至教育战略的层次。而技术的不断更迭，国内高校传统的计算机实验室管理系统已经逐渐不能满足日常教学及办公的需求，为了更好的进行实验室教学，亟需对该系统进行改进和完善，全面提升实验室的管理水平，为高校的现代化教学及各项科研活动提供平台支持。     

某高校科研管理信息系统分析与设计

高校科研管理系统是提升科研管理工作效率,提升科研服务水平的一大利器。而对新兴独立学院,科研处于起步阶段,科研管理仍是原始的手工办公的状态。针对A高校科研管理工作业务需求,设计开发科研管理系统,包含科研管理、学术讲座管理、科研成果管理、基础信息管理等模块,以B/S模式为基础,以实现科研管理信息化、科学化、制度化、动态化,提高工作效率,促进科研信息资源的共享和应用。     

基于B／S架构的高校人事管理系统的设计

利用数据库管理技术,设计完成了基于BS架构的高校人事管理系统的若干功能。高校的教职工可以通过该系统浏览自己的个人信息和工资状况,发送信息等等,人事部门可以通过该系统发布通知、更新或修改职工信息、审核统计等。给高校的人事管理工作带来了极大的方便,对企事业单位无纸化办公的普及具有积极的意义。     

封面人物简介

云老，男，36岁，1974年9月22日出生于辽宁省北票市，1998的毕业于大庆石油学院机械设计与制造专业，本科、学士学位，中国民主促进会会员，现任哈尔滨华夏计算机职业技术学院教务处处长。主持了全院信息化建设工作，完成了实践教学管理系统、教务管理系统、OA等信息化平台建设，同时将数字与多媒体技术引入全院日常教学和办公，实现了教学的信息化管理和数字化办公。     

湖北联通与新华书店共建信息化

近日，湖北联通与省新华书店集团共建基于WCDMA无线宽带网络的“移动办公通信专网”包括无线办公、销售管理系统正式上线启用，此举将有效提高书店办公自动化水平和销售管理效率，为双方发展提供广阔的前景。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and sub-pixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.