基于改进小波变换的MEMS陀螺信号去噪算法

为提高MEMS陀螺仪测量精度,抑制测量噪声对其造成的影响,该文分析了某型号MEMS陀螺仪误差特性,提出基于递归最小二乘法(RLS)多重小波分解重构的强追踪自反馈模型,建立新的软阈值函数。由于模型处理后的数据带有部分奇异值,该文提出了一种改进的中值滤波算法。对于陀螺仪零偏噪声问题,提出零偏不稳定性抑制算法,并对该算法模型进行了详细的描述。将某项目研究中列车姿态测量系统的实验数据应用到该算法模型中。测试实验分为静态、动态两组,其结果均表明:该算法减小了信号中的噪声,有效地抑制了MEMS陀螺仪随机漂移,提高了姿态解算的精度。肯定了该算法对陀螺仪输出信号噪声去除,以及使用精度提升的可行性和有效性。     

多传感器滤波算法下的两轮自平衡机器人控制

文中旨在实现两轮自平衡机器人更加稳定的姿态控制的研究,选择STM32作为开发平台,针对在对两轮平衡车姿态检测过程中存在一定的噪声干扰和测量误差的问题,设计了一种基于卡尔曼滤波的由多个传感器数据融合的方法。在更好地融合了多组陀螺仪与加速度计的数据,同时减少了存储量,得到更准确更稳定的角度值。控制结果表明,卡尔曼滤波方法下的多组传感器数据融合的姿态检测方案,能够更好地有助于系统抑制噪声,使得自平衡机器人的姿态调节更加稳定,更有利于机器人系统的控制。     

基于MEMS微惯性器件的姿态测量 单元设计与测试

MEMS惯组具有体积小、价格低、易于集成等优点,已被广泛应用于各个领域,为提高MEMS姿态解算精度,采用 Mahony互补滤波方法设计了MEMS惯性组件,Mahony互补滤波器将陀螺仪解算的高频姿态信号和加速度计－磁强计解算的低频姿态信号进行融合,提高测量精度,介绍了MEMS惯组硬件、软件、算法设计及无磁转台测试,无磁转台静态测量下的俯仰角精度0.51°,横滚角精度 0.5°,航向角精度1.1°。     

基于AHRS的改进自适应互补滤波算法研究

针对基于MEMS传感器的航姿参考系统精度不高、数据易漂移导致测量无人载体航姿数据不准确的问题,设计了基于四元数与自适应互补滤波相结合的改进自适应互补滤波算法。通过对MEMS加速度计与磁强计输出数据、MEMS陀螺仪的积分数据进行补偿、数据融合,减小积分漂移。仿真实验数据表明,该改进互补滤波算法可抑制外部噪声对输出数据准确性的影响,提高了姿态角输出数据准确性。     

微型姿态方位参考系统的设计

微型姿态方位参考系统基于stm32单片机和MEMS传感器的实时姿态测量系统。由stm32通过iic总线采集陀螺仪、加速度计、电子罗盘原始数据,利用互补滤波算法进行数据融合,采用四元数进行姿态更新并通过串口或spi总线实时输出姿态数据。     

基于MEMS惯性传感器的两轮自平衡小车设计

着重分析了两轮自平衡小车的设计原理与控制算法,采用卡尔曼滤波算法融合陀螺仪与加速度计信号,得到系统姿态倾角与角速度最优估计值,通过双闭环数字PID 算法实现系统的自平衡控制。设计了以MPU-6050传感器为姿态感知的两轮自平衡小车系统,选用8位单片机HT66FU50A为控制核心处理器,完成对传感器信号的采集处理、车身控制以及人机交互的设计,实现小车自主控制平衡状态、运行速度以及转向角度大小等功能。     

基于卡尔曼滤波的两轮自平衡车姿态检测研究

在两轮自平衡车设计的过程中,车身姿态检测是关键的设计环节,关系到自平衡车能否有效进行车身的自动控制。但是,使用单一传感器容易导致姿态检测过程中出现测量误差和噪声干扰,所以还需要对测量信号进行滤波处理。因此,基于这种情况,本文设计了一个基于卡尔曼滤波的两轮自平衡车姿态检测系统,从而更好的解决自平衡车的姿态控制问题。     

基于MARG传感器的头部姿态解算方法研究

针对头盔显示器(HMD)的头部姿态检测系统中单一传感器进行头部姿态解算准确度低、精度粗略的问题,提出了一种基于MARG传感器的头部姿态解算方法。将互补滤波与PI算法相结合估算陀螺仪的漂移误差,再通过扩展卡尔曼滤波(EKF)实现姿态数据融合。设计了由CC1310、陀螺仪、加速度计和磁强计组成的头部姿态检测单元进行测试实验。与单独的EKF对比,结果表明,这种算法对陀螺仪自身的漂移和加速度计噪声有抑制作用,提高了头部姿态解算的精度和稳定性。     

一种基于AIKF的姿态测量算法

惯性测量单元中传感器具有较强的非线性和噪声的不确定性,导致使用常规卡尔曼滤波时误差大,容易出现发散,针对此问题,该文提出了一种改进的自适应增量卡尔曼滤波（AIKF）算法。该算法使用互补滤波将加速度计、磁力计和陀螺仪的数据进行融合,利用滤波后的数据增量作为卡尔曼滤波器的观测量,同时对系统噪声进行自适应在线估计,以获得精准的姿态输出。实验结果表明,该算法能够实现姿态的精准测量,摇摆台试验中俯仰角、横滚角误差小于0.05°,航向角误差小于0.15°,具有较好的噪声抑制能力。     

基于线性CCD的两轮自平衡智能小车控制系统设计

文中设计了一种基于线性CCD图像传感器的两轮自平衡智能小车。该车通过加速度计测量小车倾角和陀螺仪测量车的倾角速度,两个数据融合得到车的姿态,进而控制其自身平衡,通过线性CCD检测赛道的信息实现行走及转向.经实验验证,该智能小车系统稳定,鲁棒性强,符合我们设计的要求。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.