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介绍了一种超高速、低功耗÷8静态分频器。该电路采用0.35μm BiCMOS工艺制作,晶体管fT达21 GHz(Vce=1 V)。该分频器在-5 V电源电压下功耗为52.5 mW,最高工作频率达到11 GHz;在-55℃和85℃温度时,最高频率仍能达到10.2 GHz;输入功率-25 dBm时,可工作在2~10 GHz的频率范围。 相似文献
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采用TSMC 1.18 μm标准CMOS工艺实现了一种4:1分频器.测试结果表明,电源电压1.8 V,核心功耗18 mW.该分频器最高工作频率达到16 GHz.当单端输入信号为-10 dBm时,具有5.8 GHz的工作范围.该分频器可以应用于超高速光纤通信以及其它高速数据传输系统. 相似文献
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一种基于新的优化结构和动态电路技术CMOS双模预分频器 总被引:5,自引:4,他引:1
提出了一种应用新的电路结构和动态电路技术的双模预分频器,它已用0.25μm CMOS数字工艺实现.新的优化结构减少了电路的传输延迟,提高了电路速度.基于这种优化结构和动态电路技术,提出了改进的D型触发器.为了验证其功能,制作了一个试验型芯片.经测试,该分频器在可以工作于GHz频率范围;在电源电压为2.5V,输入频率为2.5GHz时,其功耗仅为35mW(包括三个功耗很大的输出缓冲器的功耗).由于其具有良好的性能,该分频器可应用于许多射频系统中. 相似文献
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提出了一种应用新的电路结构和动态电路技术的双模预分频器,它已用0.25μm CMOS数字工艺实现.新的优化结构减少了电路的传输延迟,提高了电路速度.基于这种优化结构和动态电路技术,提出了改进的D型触发器.为了验证其功能,制作了一个试验型芯片.经测试,该分频器在可以工作于GHz频率范围;在电源电压为2.5V,输入频率为2.5GHz时,其功耗仅为35mW(包括三个功耗很大的输出缓冲器的功耗).由于其具有良好的性能,该分频器可应用于许多射频系统中. 相似文献
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实现了一个基于触发器结构用0.35μm CMOS工艺实现的1∶8分频器.它由3级1∶2 分频器单元组成,其中第一级为动态分频器,决定了整个芯片的性能,第二、三级为静态分频器,在低频下能稳定工作.分频器采用源极耦合逻辑电路,并在传统的电路结构上进行改进,提高了电路的性能.测试的结果表明,芯片工作速率超过8.5GHz,工作带宽大于2GHz.电路在3.3V电源电压下工作,每个1∶2分频器单元的功耗约为11mW,面积为35μm×50μm.该芯片可应用于高速射频或光电收发机系统中. 相似文献
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频率综合器中低功耗高速多模分频器设计的“时间借用”方法 总被引:1,自引:1,他引:0
提出一种基于"时间借用"方法的相位切换型多模高速分频器,新型的相位切换控制策略有效地减少相位切换控制环路的延时,使得多模分频器在较低的电源电压下仍能在较高的输入频率下工作,同时获得最大可分频模数.本文设计的多模分频器采用0.35μm标准CMOS工艺流片.测试结果表明,该多模分频器能够在2.5V电源电压下对2.4GHz输入信号进行48到64分频,所消耗的最大功耗仅为4.85mW,与近来报道的CMOS多模分频器相比,进一步降低了功耗速度比. 相似文献
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Yamauchi Y. Nagata K. Nakajima O. Ito H. Nittono T. Ishibashi T. 《Electronics letters》1987,23(17):881-882
A divide-by-four frequency divider using AIGaAs/GaAs HBTs with GalnAs/GaAs emitter cap layers was designed and fabricated. A maximum toggle frequency of 22.15 GHz was obtained at a power supply voltage of 9 V and a total power dissipation of 712 mW. The minimum input signal power was under 0dBm and the free-running frequency was as high as 20 GHz. 相似文献
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1 V 10 GHz CMOS frequency divider with low power consumption 总被引:2,自引:0,他引:2
A low supply voltage and low power ultra-high frequency divider is investigated. The proposed inverter of the frequency divider is able to operate at higher frequencies with enhanced output voltage swing and lower power consumption under an ultra-low supply voltage compared to that of existing divide-by-2 units. The frequency divider implemented with this inverter using the Chartered 0.18 /spl mu/m CMOS process is capable of operating up to 10 GHz for a 1 V supply voltage with 1.3 mW power consumption. 相似文献
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《Solid-State Circuits, IEEE Journal of》2008,43(10):2293-2302
This paper presents the design and analysis of ultra- low-voltage (ULV) high-frequency dividers using transformer feedback. Specifically, a differential-input differential-output injection-locked (IL) divider topology with transformer feedback and a wideband transformer-coupled (TC) divider with quadrature outputs are demonstrated, both of which can operate well at supply voltages as low as the device's threshold voltages. Fabricated in a standard 0.18-mum CMOS process, the ULV-IL divider measures an input frequency range from 16.1 GHz to 20 GHz while consuming a total power from 2.75 mW to 4.35 mW at 0.5 V supply, and the TC-divider measures an input frequency range of 27.8% from 15.1 GHz to 20 GHz with IQ sideband rejection of - 31 dBc while consuming power from 11.4 mW to 13.6 mW at 0.6 V supply. 相似文献
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《Microwave Theory and Techniques》2009,57(8):1948-1958
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为了满足无线通信系统应用需要,设计了一种主从耦合式LC压控振荡器(VCO).基于0.18 μm CMOS标准工艺,由一个5 GHz主VCO和两个起分频作用的从VCO组成,其中主VCO选用PMOS考毕兹差分振荡结构,在两个互补交叉耦合的从VCO的输出端之间设置有注入式NMOS器件以达到分频的目的.仿真及硬件电路实验结果表明,在1.8 V低电源电压下,5 GHz主VCO的调谐范围为4.68~5.76 GHz,2.5 GHz从VCO的调谐范围为2.32~2.84 GHz;在1 MHz的偏频下,5 GHz主VCO的相位噪声为118.2 dBc/Hz,2.5 GHz从VCO的相位噪声为124.4 dBc/Hz.另外,主从VCO的功耗分别为6.8 mW和7.9 mW,因此特别适用于低功耗、超高频短距离无线通信系统中. 相似文献
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A novel circuit topology and design procedure to increase the operating frequency of current model logic (CML) static frequency dividers is proposed. The topology and design procedure are used to design a 50 GHz CML static frequency divider in 130 nm CMOS. The designed divider has a 20 GHz division bandwidth and consumes 11.7 mW power from a 1.5 V supply. 相似文献
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Jang S.-L. Ming-Hsiang Suchen Chien-Feng Lee 《Microwave and Wireless Components Letters, IEEE》2008,18(6):410-412
This letter proposes a wide locking range and low power complementary Colpitts injection-locked frequency divider (ILFD) employing a 3-D helical transformer. The proposed ILFD consists of two single-ended complementary Colpitts oscillators coupled by a 3-D transformer to form a differential oscillator. The aim of using the 3-D transformer is to reduce chip size. The divide-by-2 LC-tank ILFD is implemented by adding an injection nMOS between the differential outputs of the voltage controlled oscillator. The measurement results show that at the supply voltage of 1.8 V, the divider free-running frequency is tunable from 4.24 to 4.8 GHz. At the incident power of 0 dBm, vtune=0.9 V, and V DD=1.5 V, the locking range is about 2.4 GHz (26.9%), from the incident frequency 7.7 to 10.1 GHz. The core power consumption is 3.9 mW. The die area is 0.548times 0.656 mm2. 相似文献
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An ultra-low supply voltage and low power dissipation fully static frequency InP SHBT divider operating at up to 38 GHz is reported. The fully differential parallel current switched configuration of D-latch maintains the speed advantages of CML circuits while allowing full functionality at a very low supply voltage. The frequency divider operates at up to 38 GHz at a single-ended input power of 0 dBm. The power dissipation of the toggled D-flip-flop is 8 mW at a power supply voltage of 1.3 V. The authors believe this is the lowest supply voltage for static frequency dividers around this frequency in any technology. This low power configuration is suitable for any digital integrated circuit. 相似文献
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A low-power current-mode-logic frequency divider integrated circuit (IC) that operated at 40 GHz with a power consumption of 7.9 mW per master-slave flip-flop was fabricated using 0.2 μm self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors. This IC also operated at 35 GHz from a supply voltage of -2.2 V. To the authors' knowledge this IC consumes the least power of any for operation in the millimetre-waveband that have appeared to date 相似文献